NL181766C - Ladingsgekoppelde halfgeleiderschakeling, waarbij pakketten meerderheidsladingsdragers door een halfgeleiderlaag evenwijdig aan de halfgeleiderlaag kunnen worden overgedragen. - Google Patents

Ladingsgekoppelde halfgeleiderschakeling, waarbij pakketten meerderheidsladingsdragers door een halfgeleiderlaag evenwijdig aan de halfgeleiderlaag kunnen worden overgedragen.

Info

Publication number
NL181766C
NL181766C NLAANVRAGE7303778,A NL7303778A NL181766C NL 181766 C NL181766 C NL 181766C NL 7303778 A NL7303778 A NL 7303778A NL 181766 C NL181766 C NL 181766C
Authority
NL
Netherlands
Prior art keywords
semi
conductor layer
layer
packages
transferred
Prior art date
Application number
NLAANVRAGE7303778,A
Other languages
English (en)
Other versions
NL7303778A (nl
NL181766B (nl
Inventor
Leonard Jan Maria Ir Esser
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Priority to NLAANVRAGE7303778,A priority Critical patent/NL181766C/nl
Priority to CA194,725A priority patent/CA1102917A/en
Priority to IT12579/74A priority patent/IT1005664B/it
Priority to CH367274A priority patent/CH570704A5/xx
Priority to ES424350A priority patent/ES424350A1/es
Priority to DE2412699A priority patent/DE2412699C2/de
Priority to GB1197474A priority patent/GB1470191A/en
Priority to GB4719476A priority patent/GB1470192A/en
Priority to AU66780/74A priority patent/AU487957B2/en
Priority to FR7409174A priority patent/FR2222756B1/fr
Priority to JP49030671A priority patent/JPS5244708B2/ja
Publication of NL7303778A publication Critical patent/NL7303778A/xx
Priority to US05/630,538 priority patent/US4012759A/en
Publication of NL181766B publication Critical patent/NL181766B/nl
Application granted granted Critical
Publication of NL181766C publication Critical patent/NL181766C/nl

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76833—Buried channel CCD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/107—Substrate region of field-effect devices
    • H01L29/1091—Substrate region of field-effect devices of charge coupled devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76833—Buried channel CCD
    • H01L29/76858—Four-Phase CCD

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Networks Using Active Elements (AREA)
NLAANVRAGE7303778,A 1973-03-19 1973-03-19 Ladingsgekoppelde halfgeleiderschakeling, waarbij pakketten meerderheidsladingsdragers door een halfgeleiderlaag evenwijdig aan de halfgeleiderlaag kunnen worden overgedragen. NL181766C (nl)

Priority Applications (12)

Application Number Priority Date Filing Date Title
NLAANVRAGE7303778,A NL181766C (nl) 1973-03-19 1973-03-19 Ladingsgekoppelde halfgeleiderschakeling, waarbij pakketten meerderheidsladingsdragers door een halfgeleiderlaag evenwijdig aan de halfgeleiderlaag kunnen worden overgedragen.
CA194,725A CA1102917A (en) 1973-03-19 1974-03-12 Charged coupled device with bulk transport
IT12579/74A IT1005664B (it) 1973-03-19 1974-03-14 Dispositivo semiconduttore
CH367274A CH570704A5 (nl) 1973-03-19 1974-03-15
DE2412699A DE2412699C2 (de) 1973-03-19 1974-03-16 Ladungsgekoppeltes Halbleiterbauelement
ES424350A ES424350A1 (es) 1973-03-19 1974-03-16 Perfeccionamientos introducidos en dispositivos semiconduc-tores acoplados por carga.
GB1197474A GB1470191A (en) 1973-03-19 1974-03-18 Charge coupled devices
GB4719476A GB1470192A (nl) 1973-03-19 1974-03-18
AU66780/74A AU487957B2 (en) 1973-03-19 1974-03-18 Semiconductor device
FR7409174A FR2222756B1 (nl) 1973-03-19 1974-03-19
JP49030671A JPS5244708B2 (nl) 1973-03-19 1974-03-19
US05/630,538 US4012759A (en) 1973-03-19 1975-11-10 Bulk channel charge transfer device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NLAANVRAGE7303778,A NL181766C (nl) 1973-03-19 1973-03-19 Ladingsgekoppelde halfgeleiderschakeling, waarbij pakketten meerderheidsladingsdragers door een halfgeleiderlaag evenwijdig aan de halfgeleiderlaag kunnen worden overgedragen.

Publications (3)

Publication Number Publication Date
NL7303778A NL7303778A (nl) 1974-09-23
NL181766B NL181766B (nl) 1987-05-18
NL181766C true NL181766C (nl) 1987-10-16

Family

ID=19818460

Family Applications (1)

Application Number Title Priority Date Filing Date
NLAANVRAGE7303778,A NL181766C (nl) 1973-03-19 1973-03-19 Ladingsgekoppelde halfgeleiderschakeling, waarbij pakketten meerderheidsladingsdragers door een halfgeleiderlaag evenwijdig aan de halfgeleiderlaag kunnen worden overgedragen.

Country Status (10)

Country Link
US (1) US4012759A (nl)
JP (1) JPS5244708B2 (nl)
CA (1) CA1102917A (nl)
CH (1) CH570704A5 (nl)
DE (1) DE2412699C2 (nl)
ES (1) ES424350A1 (nl)
FR (1) FR2222756B1 (nl)
GB (2) GB1470192A (nl)
IT (1) IT1005664B (nl)
NL (1) NL181766C (nl)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4077112A (en) * 1974-09-24 1978-03-07 U.S. Philips Corporation Method of manufacturing charge transfer device
NL7413207A (nl) * 1974-10-08 1976-04-12 Philips Nv Halfgeleiderinrichting.
NL180157C (nl) * 1975-06-09 1987-01-02 Philips Nv Halfgeleider beeldopneeminrichting.
GB1548877A (en) * 1975-06-26 1979-07-18 Mullard Ltd Semiconductor devices
NL7510311A (nl) * 1975-09-02 1977-03-04 Philips Nv Ladingsoverdrachtinrichting.
GB1551935A (en) * 1976-08-19 1979-09-05 Philips Nv Imaging devices
GB1559312A (en) * 1976-08-26 1980-01-16 Philips Nv Photosensitive device arrangements and systems and photosensitive elements therefor
GB1559860A (en) * 1976-12-14 1980-01-30 Rca Corp Surface-channel ccd image sensor with buried-channel output register
US4364076A (en) * 1977-08-26 1982-12-14 Texas Instruments Incorporated Co-planar well-type charge coupled device with enhanced storage capacity and reduced leakage current
NL7709916A (nl) * 1977-09-09 1979-03-13 Philips Nv Ladingsgekoppelde inrichting.
DE2743245A1 (de) * 1977-09-26 1979-04-05 Siemens Ag Ladungsgekoppeltes bauelement
US4151539A (en) * 1977-12-23 1979-04-24 The United States Of America As Represented By The Secretary Of The Air Force Junction-storage JFET bucket-brigade structure
US4229752A (en) * 1978-05-16 1980-10-21 Texas Instruments Incorporated Virtual phase charge transfer device
US4994875A (en) * 1978-05-16 1991-02-19 Texas Instruments Incorporated Virtual phase charge transfer device
JPS5515275A (en) * 1978-07-19 1980-02-02 Semiconductor Res Found Charge transfer device
US4285000A (en) * 1979-03-12 1981-08-18 Rockwell International Corporation Buried channel charge coupled device with semi-insulating substrate
EP0025658A3 (en) * 1979-09-18 1983-04-20 The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and Improvements in or relating to charge storage and transfer devices and their fabrication
JPS577964A (en) * 1980-06-17 1982-01-16 Matsushita Electric Ind Co Ltd Charge transfer element
JPS57144418A (en) * 1981-03-02 1982-09-07 Aichi Tokei Denki Co Ltd Pulse signal transmitter
US4667213A (en) * 1984-09-24 1987-05-19 Rca Corporation Charge-coupled device channel structure
NL8600786A (nl) * 1986-03-27 1987-10-16 Philips Nv Ladingsgekoppelde inrichting.
US4967250A (en) * 1987-05-05 1990-10-30 Hughes Aircraft Company Charge-coupled device with focused ion beam fabrication
DE3715675A1 (de) * 1987-05-11 1988-12-01 Messerschmitt Boelkow Blohm Halbleiterelement
US4900688A (en) * 1987-06-25 1990-02-13 The United States Of America As Represented By The Secretary Of The Air Force Pseudo uniphase charge coupled device fabrication by self-aligned virtual barrier and virtual gate formation
US4992841A (en) * 1987-06-25 1991-02-12 The United States Of America As Represented By The Secretary Of The Air Force Pseudo uniphase charge coupled device
US4862235A (en) * 1988-06-30 1989-08-29 Tektronix, Inc. Electrode structure for a corner turn in a series-parallel-series charge coupled device
FR2674845A1 (fr) * 1991-04-05 1992-10-09 Champagne Sa Cristalleries Roy Procede pour la fabrication en verrerie-cristallerie d'un recipient par la technique "aspire-souffle", dispositif pour sa mise en óoeuvre, produits ainsi obtenus.
WO1992021151A2 (en) * 1991-05-10 1992-11-26 Q-Dot, Inc. HIGH-SPEED PERISTALTIC CCD IMAGER WITH GaAs FET OUTPUT
US9905608B1 (en) * 2017-01-11 2018-02-27 Semiconductor Components Industries, Llc EMCCD image sensor with stable charge multiplication gain

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE383573B (sv) * 1971-04-06 1976-03-15 Western Electric Co Laddningskopplad anordning
US3789267A (en) * 1971-06-28 1974-01-29 Bell Telephone Labor Inc Charge coupled devices employing nonuniform concentrations of immobile charge along the information channel
US3796932A (en) * 1971-06-28 1974-03-12 Bell Telephone Labor Inc Charge coupled devices employing nonuniform concentrations of immobile charge along the information channel
US3767983A (en) * 1972-08-23 1973-10-23 Bell Telephone Labor Inc Charge transfer device with improved transfer efficiency
US3784847A (en) * 1972-10-10 1974-01-08 Gen Electric Dielectric strip isolation for jfet or mesfet depletion-mode bucket-brigade circuit
US3792322A (en) * 1973-04-19 1974-02-12 W Boyle Buried channel charge coupled devices
US3852799A (en) * 1973-04-27 1974-12-03 Bell Telephone Labor Inc Buried channel charge coupled apparatus

Also Published As

Publication number Publication date
CH570704A5 (nl) 1975-12-15
NL7303778A (nl) 1974-09-23
IT1005664B (it) 1976-09-30
JPS5244708B2 (nl) 1977-11-10
GB1470191A (en) 1977-04-14
US4012759A (en) 1977-03-15
ES424350A1 (es) 1976-10-16
NL181766B (nl) 1987-05-18
DE2412699C2 (de) 1982-05-27
AU6678074A (en) 1975-09-18
JPS503275A (nl) 1975-01-14
FR2222756B1 (nl) 1977-10-07
FR2222756A1 (nl) 1974-10-18
DE2412699A1 (de) 1974-10-10
GB1470192A (nl) 1977-04-14
CA1102917A (en) 1981-06-09

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Legal Events

Date Code Title Description
BC A request for examination has been filed
A85 Still pending on 85-01-01
V1 Lapsed because of non-payment of the annual fee