NL142287B - Werkwijze voor het vervaardigen van een halfgeleiderinrichting, alsmede halfgeleiderinrichting vervaardigd volgens deze werkwijze. - Google Patents
Werkwijze voor het vervaardigen van een halfgeleiderinrichting, alsmede halfgeleiderinrichting vervaardigd volgens deze werkwijze.Info
- Publication number
- NL142287B NL142287B NL696907927A NL6907927A NL142287B NL 142287 B NL142287 B NL 142287B NL 696907927 A NL696907927 A NL 696907927A NL 6907927 A NL6907927 A NL 6907927A NL 142287 B NL142287 B NL 142287B
- Authority
- NL
- Netherlands
- Prior art keywords
- semi
- manufacture
- well
- manufactured according
- semiconductor device
- Prior art date
Links
- 238000000034 method Methods 0.000 title 2
- 239000004065 semiconductor Substances 0.000 title 2
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
- H01L27/0826—Combination of vertical complementary transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8222—Bipolar technology
- H01L21/8228—Complementary devices, e.g. complementary transistors
- H01L21/82285—Complementary vertical transistors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/037—Diffusion-deposition
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/085—Isolated-integrated
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/122—Polycrystalline
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/151—Simultaneous diffusion
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
- Filling Or Emptying Of Bunkers, Hoppers, And Tanks (AREA)
- Bipolar Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3538568 | 1968-05-25 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| NL6907927A NL6907927A (nl) | 1969-11-27 |
| NL142287B true NL142287B (nl) | 1974-05-15 |
Family
ID=12440421
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL696907927A NL142287B (nl) | 1968-05-25 | 1969-05-23 | Werkwijze voor het vervaardigen van een halfgeleiderinrichting, alsmede halfgeleiderinrichting vervaardigd volgens deze werkwijze. |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US3648128A (nl) |
| AT (1) | AT310812B (nl) |
| BE (1) | BE733509A (nl) |
| CH (2) | CH533907A (nl) |
| DE (1) | DE1926884A1 (nl) |
| FR (1) | FR2009343B1 (nl) |
| GB (1) | GB1263617A (nl) |
| NL (1) | NL142287B (nl) |
| NO (1) | NO125996B (nl) |
| SE (1) | SE355109B (nl) |
Families Citing this family (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3621346A (en) * | 1970-01-28 | 1971-11-16 | Ibm | Process for forming semiconductor devices with polycrystalline diffusion pathways and devices formed thereby |
| NL7001607A (nl) * | 1970-02-05 | 1971-08-09 | ||
| US3703420A (en) * | 1970-03-03 | 1972-11-21 | Ibm | Lateral transistor structure and process for forming the same |
| US3653120A (en) * | 1970-07-27 | 1972-04-04 | Gen Electric | Method of making low resistance polycrystalline silicon contacts to buried collector regions using refractory metal silicides |
| US4054899A (en) * | 1970-09-03 | 1977-10-18 | Texas Instruments Incorporated | Process for fabricating monolithic circuits having matched complementary transistors and product |
| NL166156C (nl) * | 1971-05-22 | 1981-06-15 | Philips Nv | Halfgeleiderinrichting bevattende ten minste een op een halfgeleidersubstraatlichaam aangebrachte halfge- leiderlaag met ten minste een isolatiezone, welke een in de halfgeleiderlaag verzonken isolatielaag uit door plaatselijke thermische oxydatie van het half- geleidermateriaal van de halfgeleiderlaag gevormd isolerend materiaal bevat en een werkwijze voor het vervaardigen daarvan. |
| DE2212168C2 (de) * | 1972-03-14 | 1982-10-21 | Ibm Deutschland Gmbh, 7000 Stuttgart | Monolithisch integrierte Halbleiteranordnung |
| US3847687A (en) * | 1972-11-15 | 1974-11-12 | Motorola Inc | Methods of forming self aligned transistor structure having polycrystalline contacts |
| JPS604591B2 (ja) * | 1973-11-02 | 1985-02-05 | 株式会社日立製作所 | 半導体集積回路装置 |
| US3956033A (en) * | 1974-01-03 | 1976-05-11 | Motorola, Inc. | Method of fabricating an integrated semiconductor transistor structure with epitaxial contact to the buried sub-collector |
| JPS51132779A (en) * | 1975-05-14 | 1976-11-18 | Hitachi Ltd | Production method of vertical-junction type field-effect transistor |
| JPS53108776A (en) * | 1977-03-04 | 1978-09-21 | Nec Corp | Semiconductor device |
| JPS5951743B2 (ja) * | 1978-11-08 | 1984-12-15 | 株式会社日立製作所 | 半導体集積装置 |
| US4274891A (en) * | 1979-06-29 | 1981-06-23 | International Business Machines Corporation | Method of fabricating buried injector memory cell formed from vertical complementary bipolar transistor circuits utilizing mono-poly deposition |
| US4485552A (en) * | 1980-01-18 | 1984-12-04 | International Business Machines Corporation | Complementary transistor structure and method for manufacture |
| JPS5730359A (en) * | 1980-07-30 | 1982-02-18 | Nec Corp | Semiconductor device |
| US4706107A (en) * | 1981-06-04 | 1987-11-10 | Nippon Electric Co., Ltd. | IC memory cells with reduced alpha particle influence |
| US4573257A (en) * | 1984-09-14 | 1986-03-04 | Motorola, Inc. | Method of forming self-aligned implanted channel-stop and buried layer utilizing non-single crystal alignment key |
| US4574469A (en) * | 1984-09-14 | 1986-03-11 | Motorola, Inc. | Process for self-aligned buried layer, channel-stop, and isolation |
| US4583282A (en) * | 1984-09-14 | 1986-04-22 | Motorola, Inc. | Process for self-aligned buried layer, field guard, and isolation |
| IT1218471B (it) * | 1985-05-09 | 1990-04-19 | Ates Componenti Elettron | Circuito integrato bipolare comprendente transistori pnp verticali con collettore sul substrato |
| US6005282A (en) * | 1986-09-26 | 1999-12-21 | Analog Devices, Inc. | Integrated circuit with complementary isolated bipolar transistors |
| US4737468A (en) * | 1987-04-13 | 1988-04-12 | Motorola Inc. | Process for developing implanted buried layer and/or key locators |
| US4830973A (en) * | 1987-10-06 | 1989-05-16 | Motorola, Inc. | Merged complementary bipolar and MOS means and method |
| US5117274A (en) * | 1987-10-06 | 1992-05-26 | Motorola, Inc. | Merged complementary bipolar and MOS means and method |
| US5212109A (en) * | 1989-05-24 | 1993-05-18 | Nissan Motor Co., Ltd. | Method for forming PN junction isolation regions by forming buried regions of doped polycrystalline or amorphous semiconductor |
| US5406113A (en) * | 1991-01-09 | 1995-04-11 | Fujitsu Limited | Bipolar transistor having a buried collector layer |
| JPH05218049A (ja) * | 1992-01-31 | 1993-08-27 | Nec Corp | 半導体素子形成用基板 |
| US7411271B1 (en) * | 2007-01-19 | 2008-08-12 | Episil Technologies Inc. | Complementary metal-oxide-semiconductor field effect transistor |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3189973A (en) * | 1961-11-27 | 1965-06-22 | Bell Telephone Labor Inc | Method of fabricating a semiconductor device |
| US3341755A (en) * | 1964-03-20 | 1967-09-12 | Westinghouse Electric Corp | Switching transistor structure and method of making the same |
| US3312882A (en) * | 1964-06-25 | 1967-04-04 | Westinghouse Electric Corp | Transistor structure and method of making, suitable for integration and exhibiting good power handling capability and frequency response |
| FR1459892A (fr) * | 1964-08-20 | 1966-06-17 | Texas Instruments Inc | Dispositifs semi-conducteurs |
| DE1439736A1 (de) * | 1964-10-30 | 1969-03-27 | Telefunken Patent | Verfahren zur Herstellung niedriger Kollektor- bzw. Diodenbahnwiderstaende in einer Festkoerperschaltung |
| US3327182A (en) * | 1965-06-14 | 1967-06-20 | Westinghouse Electric Corp | Semiconductor integrated circuit structure and method of making the same |
| US3475661A (en) * | 1966-02-09 | 1969-10-28 | Sony Corp | Semiconductor device including polycrystalline areas among monocrystalline areas |
| US3414783A (en) * | 1966-03-14 | 1968-12-03 | Westinghouse Electric Corp | Electronic apparatus for high speed transistor switching |
| US3474308A (en) * | 1966-12-13 | 1969-10-21 | Texas Instruments Inc | Monolithic circuits having matched complementary transistors,sub-epitaxial and surface resistors,and n and p channel field effect transistors |
-
1969
- 1969-05-21 US US826437A patent/US3648128A/en not_active Expired - Lifetime
- 1969-05-22 CH CH675172A patent/CH533907A/de not_active IP Right Cessation
- 1969-05-22 CH CH777869A patent/CH529445A/de not_active IP Right Cessation
- 1969-05-23 NO NO2118/69A patent/NO125996B/no unknown
- 1969-05-23 GB GB26433/69A patent/GB1263617A/en not_active Expired
- 1969-05-23 NL NL696907927A patent/NL142287B/nl not_active IP Right Cessation
- 1969-05-23 FR FR6917034A patent/FR2009343B1/fr not_active Expired
- 1969-05-23 SE SE07327/69A patent/SE355109B/xx unknown
- 1969-05-23 BE BE733509D patent/BE733509A/xx not_active IP Right Cessation
- 1969-05-27 DE DE19691926884 patent/DE1926884A1/de active Pending
- 1969-05-27 AT AT499269A patent/AT310812B/de not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| CH533907A (de) | 1973-02-28 |
| CH529445A (de) | 1972-10-15 |
| FR2009343B1 (nl) | 1974-10-31 |
| AT310812B (de) | 1973-10-25 |
| SE355109B (nl) | 1973-04-02 |
| GB1263617A (en) | 1972-02-16 |
| US3648128A (en) | 1972-03-07 |
| NO125996B (nl) | 1972-12-04 |
| FR2009343A1 (nl) | 1970-01-30 |
| BE733509A (nl) | 1969-11-03 |
| DE1926884A1 (de) | 1969-12-11 |
| NL6907927A (nl) | 1969-11-27 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| V1 | Lapsed because of non-payment of the annual fee | ||
| NL80 | Abbreviated name of patent owner mentioned of already nullified patent |
Owner name: SONY |