NL154868B - Werkwijze voor het vervaardigen van halfgeleiderinrichtingen en halfgeleiderinrichtingen volgens deze werkwijze verkregen. - Google Patents
Werkwijze voor het vervaardigen van halfgeleiderinrichtingen en halfgeleiderinrichtingen volgens deze werkwijze verkregen.Info
- Publication number
- NL154868B NL154868B NL696916239A NL6916239A NL154868B NL 154868 B NL154868 B NL 154868B NL 696916239 A NL696916239 A NL 696916239A NL 6916239 A NL6916239 A NL 6916239A NL 154868 B NL154868 B NL 154868B
- Authority
- NL
- Netherlands
- Prior art keywords
- semiconductor devices
- manufacture
- obtained according
- devices obtained
- semiconductor
- Prior art date
Links
- 238000000034 method Methods 0.000 title 2
- 239000004065 semiconductor Substances 0.000 title 2
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/312—Organic layers, e.g. photoresist
- H01L21/3121—Layers comprising organo-silicon compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/977—Thinning or removal of substrate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Weting (AREA)
- Dicing (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB5103568 | 1968-10-28 | ||
GB24991/69A GB1285708A (en) | 1968-10-28 | 1968-10-28 | Semi-conductor devices |
Publications (2)
Publication Number | Publication Date |
---|---|
NL6916239A NL6916239A (nl) | 1970-05-01 |
NL154868B true NL154868B (nl) | 1977-10-17 |
Family
ID=26257416
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL696916239A NL154868B (nl) | 1968-10-28 | 1969-10-28 | Werkwijze voor het vervaardigen van halfgeleiderinrichtingen en halfgeleiderinrichtingen volgens deze werkwijze verkregen. |
Country Status (12)
Country | Link |
---|---|
US (1) | US3756872A (nl) |
AT (1) | AT310253B (nl) |
BE (1) | BE740836A (nl) |
CH (1) | CH522955A (nl) |
CS (1) | CS168552B2 (nl) |
DE (1) | DE1954265A1 (nl) |
DK (1) | DK135071B (nl) |
ES (2) | ES373341A1 (nl) |
FR (1) | FR2021690B1 (nl) |
GB (1) | GB1285708A (nl) |
NL (1) | NL154868B (nl) |
SE (2) | SE376684B (nl) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1335201A (en) * | 1970-05-21 | 1973-10-24 | Lucas Industries Ltd | Method of manufacturing semi-conductor devices |
FR2100997B1 (nl) * | 1970-08-04 | 1973-12-21 | Silec Semi Conducteurs | |
JPS5527463B2 (nl) * | 1973-02-28 | 1980-07-21 | ||
IT1059086B (it) * | 1976-04-14 | 1982-05-31 | Ates Componenti Elettron | Procedimento per la passivazione di dispositivi a semiconduttore di potenza ad alta tensione inversa |
DE2929339A1 (de) * | 1978-07-24 | 1980-02-14 | Citizen Watch Co Ltd | Halbleiteranordnung |
US4624724A (en) * | 1985-01-17 | 1986-11-25 | General Electric Company | Method of making integrated circuit silicon die composite having hot melt adhesive on its silicon base |
DE3621796A1 (de) * | 1986-06-30 | 1988-01-07 | Siemens Ag | Verfahren zur verbesserung der nebensprechdaempfung bei einer optisch-elektronischen sensoranordnung |
US4904610A (en) * | 1988-01-27 | 1990-02-27 | General Instrument Corporation | Wafer level process for fabricating passivated semiconductor devices |
US5545291A (en) * | 1993-12-17 | 1996-08-13 | The Regents Of The University Of California | Method for fabricating self-assembling microstructures |
US6864570B2 (en) * | 1993-12-17 | 2005-03-08 | The Regents Of The University Of California | Method and apparatus for fabricating self-assembling microstructures |
US5904545A (en) * | 1993-12-17 | 1999-05-18 | The Regents Of The University Of California | Apparatus for fabricating self-assembling microstructures |
DE19604405C2 (de) * | 1996-02-07 | 2002-10-10 | Micronas Gmbh | Verfahren zum Vereinzeln von in einem Körper enthaltenen elektronischen Elementen |
FR2782843B1 (fr) * | 1998-08-25 | 2000-09-29 | Commissariat Energie Atomique | Procede d'isolation physique de regions d'une plaque de substrat |
DE10055763A1 (de) * | 2000-11-10 | 2002-05-23 | Infineon Technologies Ag | Verfahren zur Herstellung einer hochtemperaturfesten Verbindung zwischen zwei Wafern |
DE10158307A1 (de) * | 2001-11-28 | 2003-02-20 | Infineon Technologies Ag | Verfahren zum Anschließen von Schaltungseinheiten auf Wafer-Skale-Ebene durch Dehnen einer Folie |
TWI232560B (en) * | 2002-04-23 | 2005-05-11 | Sanyo Electric Co | Semiconductor device and its manufacture |
TWI229435B (en) * | 2002-06-18 | 2005-03-11 | Sanyo Electric Co | Manufacture of semiconductor device |
TWI227550B (en) * | 2002-10-30 | 2005-02-01 | Sanyo Electric Co | Semiconductor device manufacturing method |
JP4401181B2 (ja) * | 2003-08-06 | 2010-01-20 | 三洋電機株式会社 | 半導体装置及びその製造方法 |
JP4018096B2 (ja) * | 2004-10-05 | 2007-12-05 | 松下電器産業株式会社 | 半導体ウェハの分割方法、及び半導体素子の製造方法 |
TWI324800B (en) * | 2005-12-28 | 2010-05-11 | Sanyo Electric Co | Method for manufacturing semiconductor device |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3260634A (en) * | 1961-02-17 | 1966-07-12 | Motorola Inc | Method of etching a semiconductor wafer to provide tapered dice |
FR1486041A (fr) * | 1965-07-07 | 1967-06-23 | Westinghouse Electric Corp | Dispositif de protection des jonctions d'un dispositif semi-conducteur |
GB1118536A (en) * | 1966-09-30 | 1968-07-03 | Standard Telephones Cables Ltd | Improvements in or relating to semiconductor devices |
-
1968
- 1968-10-28 GB GB24991/69A patent/GB1285708A/en not_active Expired
-
1969
- 1969-10-06 US US00863984A patent/US3756872A/en not_active Expired - Lifetime
- 1969-10-14 CH CH1540669A patent/CH522955A/de not_active IP Right Cessation
- 1969-10-20 SE SE7204684A patent/SE376684B/xx unknown
- 1969-10-20 SE SE14326/69A patent/SE363930B/xx unknown
- 1969-10-21 AT AT993069A patent/AT310253B/de not_active IP Right Cessation
- 1969-10-21 FR FR6936022A patent/FR2021690B1/fr not_active Expired
- 1969-10-25 CS CS1478*[A patent/CS168552B2/cs unknown
- 1969-10-25 ES ES373341A patent/ES373341A1/es not_active Expired
- 1969-10-27 DK DK566969AA patent/DK135071B/da unknown
- 1969-10-27 BE BE740836D patent/BE740836A/xx unknown
- 1969-10-28 NL NL696916239A patent/NL154868B/nl unknown
- 1969-10-28 DE DE19691954265 patent/DE1954265A1/de active Pending
-
1972
- 1972-02-09 ES ES399979A patent/ES399979A1/es not_active Expired
Also Published As
Publication number | Publication date |
---|---|
ES373341A1 (es) | 1972-05-16 |
ES399979A1 (es) | 1975-06-16 |
DK135071C (nl) | 1977-08-01 |
DK135071B (da) | 1977-02-28 |
BE740836A (nl) | 1970-04-01 |
SE363930B (nl) | 1974-02-04 |
CH522955A (de) | 1972-05-15 |
GB1285708A (en) | 1972-08-16 |
CS168552B2 (nl) | 1976-06-29 |
SE376684B (nl) | 1975-06-02 |
DE1954265A1 (de) | 1970-05-27 |
NL6916239A (nl) | 1970-05-01 |
AT310253B (de) | 1973-09-25 |
FR2021690B1 (nl) | 1974-05-03 |
FR2021690A1 (nl) | 1970-07-24 |
US3756872A (en) | 1973-09-04 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
NL80 | Abbreviated name of patent owner mentioned of already nullified patent |
Owner name: LUCAS |