AT310253B - Verfahren zur Herstellung von Halbleitern, insbesondere Halbleiterdioden - Google Patents
Verfahren zur Herstellung von Halbleitern, insbesondere HalbleiterdiodenInfo
- Publication number
- AT310253B AT310253B AT993069A AT993069A AT310253B AT 310253 B AT310253 B AT 310253B AT 993069 A AT993069 A AT 993069A AT 993069 A AT993069 A AT 993069A AT 310253 B AT310253 B AT 310253B
- Authority
- AT
- Austria
- Prior art keywords
- semiconductors
- production
- semiconductor diodes
- particular semiconductor
- diodes
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/69—Inorganic materials
- H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
- H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
- H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
- H10P14/6326—Deposition processes
- H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
- H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P54/00—Cutting or separating of wafers, substrates or parts of devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
- H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
- H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
- H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/977—Thinning or removal of substrate
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB5103568 | 1968-10-28 | ||
| GB24991/69A GB1285708A (en) | 1968-10-28 | 1968-10-28 | Semi-conductor devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| AT310253B true AT310253B (de) | 1973-09-25 |
Family
ID=26257416
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT993069A AT310253B (de) | 1968-10-28 | 1969-10-21 | Verfahren zur Herstellung von Halbleitern, insbesondere Halbleiterdioden |
Country Status (12)
| Country | Link |
|---|---|
| US (1) | US3756872A (de) |
| AT (1) | AT310253B (de) |
| BE (1) | BE740836A (de) |
| CH (1) | CH522955A (de) |
| CS (1) | CS168552B2 (de) |
| DE (1) | DE1954265A1 (de) |
| DK (1) | DK135071B (de) |
| ES (2) | ES373341A1 (de) |
| FR (1) | FR2021690B1 (de) |
| GB (1) | GB1285708A (de) |
| NL (1) | NL154868B (de) |
| SE (2) | SE376684B (de) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1335201A (en) * | 1970-05-21 | 1973-10-24 | Lucas Industries Ltd | Method of manufacturing semi-conductor devices |
| FR2100997B1 (de) * | 1970-08-04 | 1973-12-21 | Silec Semi Conducteurs | |
| JPS5527463B2 (de) * | 1973-02-28 | 1980-07-21 | ||
| IT1059086B (it) * | 1976-04-14 | 1982-05-31 | Ates Componenti Elettron | Procedimento per la passivazione di dispositivi a semiconduttore di potenza ad alta tensione inversa |
| DE2929339A1 (de) * | 1978-07-24 | 1980-02-14 | Citizen Watch Co Ltd | Halbleiteranordnung |
| US4624724A (en) * | 1985-01-17 | 1986-11-25 | General Electric Company | Method of making integrated circuit silicon die composite having hot melt adhesive on its silicon base |
| DE3621796A1 (de) * | 1986-06-30 | 1988-01-07 | Siemens Ag | Verfahren zur verbesserung der nebensprechdaempfung bei einer optisch-elektronischen sensoranordnung |
| US4904610A (en) * | 1988-01-27 | 1990-02-27 | General Instrument Corporation | Wafer level process for fabricating passivated semiconductor devices |
| US5545291A (en) * | 1993-12-17 | 1996-08-13 | The Regents Of The University Of California | Method for fabricating self-assembling microstructures |
| US6864570B2 (en) * | 1993-12-17 | 2005-03-08 | The Regents Of The University Of California | Method and apparatus for fabricating self-assembling microstructures |
| US5904545A (en) * | 1993-12-17 | 1999-05-18 | The Regents Of The University Of California | Apparatus for fabricating self-assembling microstructures |
| DE19604405C2 (de) * | 1996-02-07 | 2002-10-10 | Micronas Gmbh | Verfahren zum Vereinzeln von in einem Körper enthaltenen elektronischen Elementen |
| FR2782843B1 (fr) * | 1998-08-25 | 2000-09-29 | Commissariat Energie Atomique | Procede d'isolation physique de regions d'une plaque de substrat |
| DE10055763A1 (de) * | 2000-11-10 | 2002-05-23 | Infineon Technologies Ag | Verfahren zur Herstellung einer hochtemperaturfesten Verbindung zwischen zwei Wafern |
| DE10158307A1 (de) * | 2001-11-28 | 2003-02-20 | Infineon Technologies Ag | Verfahren zum Anschließen von Schaltungseinheiten auf Wafer-Skale-Ebene durch Dehnen einer Folie |
| TWI232560B (en) * | 2002-04-23 | 2005-05-11 | Sanyo Electric Co | Semiconductor device and its manufacture |
| TWI229435B (en) * | 2002-06-18 | 2005-03-11 | Sanyo Electric Co | Manufacture of semiconductor device |
| TWI227550B (en) * | 2002-10-30 | 2005-02-01 | Sanyo Electric Co | Semiconductor device manufacturing method |
| JP4401181B2 (ja) * | 2003-08-06 | 2010-01-20 | 三洋電機株式会社 | 半導体装置及びその製造方法 |
| JP4018096B2 (ja) * | 2004-10-05 | 2007-12-05 | 松下電器産業株式会社 | 半導体ウェハの分割方法、及び半導体素子の製造方法 |
| TWI324800B (en) * | 2005-12-28 | 2010-05-11 | Sanyo Electric Co | Method for manufacturing semiconductor device |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3260634A (en) * | 1961-02-17 | 1966-07-12 | Motorola Inc | Method of etching a semiconductor wafer to provide tapered dice |
| FR1486041A (fr) * | 1965-07-07 | 1967-06-23 | Westinghouse Electric Corp | Dispositif de protection des jonctions d'un dispositif semi-conducteur |
| GB1118536A (en) * | 1966-09-30 | 1968-07-03 | Standard Telephones Cables Ltd | Improvements in or relating to semiconductor devices |
-
1968
- 1968-10-28 GB GB24991/69A patent/GB1285708A/en not_active Expired
-
1969
- 1969-10-06 US US00863984A patent/US3756872A/en not_active Expired - Lifetime
- 1969-10-14 CH CH1540669A patent/CH522955A/de not_active IP Right Cessation
- 1969-10-20 SE SE7204684A patent/SE376684B/xx unknown
- 1969-10-20 SE SE14326/69A patent/SE363930B/xx unknown
- 1969-10-21 FR FR6936022A patent/FR2021690B1/fr not_active Expired
- 1969-10-21 AT AT993069A patent/AT310253B/de not_active IP Right Cessation
- 1969-10-25 ES ES373341A patent/ES373341A1/es not_active Expired
- 1969-10-25 CS CS1478*[A patent/CS168552B2/cs unknown
- 1969-10-27 BE BE740836D patent/BE740836A/xx unknown
- 1969-10-27 DK DK566969AA patent/DK135071B/da unknown
- 1969-10-28 NL NL696916239A patent/NL154868B/xx unknown
- 1969-10-28 DE DE19691954265 patent/DE1954265A1/de active Pending
-
1972
- 1972-02-09 ES ES399979A patent/ES399979A1/es not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DK135071B (da) | 1977-02-28 |
| NL6916239A (de) | 1970-05-01 |
| US3756872A (en) | 1973-09-04 |
| BE740836A (de) | 1970-04-01 |
| ES399979A1 (es) | 1975-06-16 |
| GB1285708A (en) | 1972-08-16 |
| DE1954265A1 (de) | 1970-05-27 |
| FR2021690A1 (de) | 1970-07-24 |
| FR2021690B1 (de) | 1974-05-03 |
| CH522955A (de) | 1972-05-15 |
| ES373341A1 (es) | 1972-05-16 |
| DK135071C (de) | 1977-08-01 |
| SE363930B (de) | 1974-02-04 |
| NL154868B (nl) | 1977-10-17 |
| CS168552B2 (de) | 1976-06-29 |
| SE376684B (de) | 1975-06-02 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ELJ | Ceased due to non-payment of the annual fee |