CH461639A - Verfahren zur Herstellung eines elektrolumineszierenden Halbleiterelementes - Google Patents

Verfahren zur Herstellung eines elektrolumineszierenden Halbleiterelementes

Info

Publication number
CH461639A
CH461639A CH1528464A CH1528464A CH461639A CH 461639 A CH461639 A CH 461639A CH 1528464 A CH1528464 A CH 1528464A CH 1528464 A CH1528464 A CH 1528464A CH 461639 A CH461639 A CH 461639A
Authority
CH
Switzerland
Prior art keywords
production
semiconductor element
electroluminescent semiconductor
electroluminescent
semiconductor
Prior art date
Application number
CH1528464A
Other languages
English (en)
Inventor
Paul Dumke William
Sidney Levitt Ralph
Weiser Kurt
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US326171A external-priority patent/US3283160A/en
Priority claimed from US326114A external-priority patent/US3267294A/en
Application filed by Ibm filed Critical Ibm
Publication of CH461639A publication Critical patent/CH461639A/de

Links

Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00Electroluminescent light sources
    • H05B33/12Light sources with substantially two-dimensional radiating surfaces
    • H05B33/14Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
    • H05B33/145Arrangements of the electroluminescent material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/14Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices
    • H01L31/147Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
    • H01L31/153Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers formed in, or on, a common substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Led Devices (AREA)
CH1528464A 1963-11-26 1964-11-26 Verfahren zur Herstellung eines elektrolumineszierenden Halbleiterelementes CH461639A (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US326171A US3283160A (en) 1963-11-26 1963-11-26 Photoelectronic semiconductor devices comprising an injection luminescent diode and a light sensitive diode with a common n-region
US326114A US3267294A (en) 1963-11-26 1963-11-26 Solid state light emissive diodes having negative resistance characteristics

Publications (1)

Publication Number Publication Date
CH461639A true CH461639A (de) 1968-08-31

Family

ID=26985249

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1528464A CH461639A (de) 1963-11-26 1964-11-26 Verfahren zur Herstellung eines elektrolumineszierenden Halbleiterelementes

Country Status (6)

Country Link
AT (1) AT270765B (de)
CH (1) CH461639A (de)
DE (1) DE1231353B (de)
FR (1) FR1414611A (de)
GB (1) GB1080627A (de)
NL (1) NL6413611A (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3625781A (en) * 1969-05-09 1971-12-07 Ibm Method of reducing carrier lifetime in semiconductor structures
JPS5023268B1 (de) * 1969-12-25 1975-08-06
JPS5128783A (de) * 1974-09-05 1976-03-11 Oki Electric Ind Co Ltd
JPS5714408Y2 (de) * 1978-05-02 1982-03-25
JPS53166383U (de) * 1978-06-01 1978-12-26

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1048346B (de) * 1959-01-08
US2817783A (en) * 1955-07-13 1957-12-24 Sylvania Electric Prod Electroluminescent device
DE1052563B (de) * 1957-03-05 1959-03-12 Albrecht Fischer Dipl Phys Anordnung und Herstellungsverfahren fuer Injektions-Elektrolumineszenzlampen
DE1054179B (de) * 1957-09-25 1959-04-02 Siemens Ag Halbleiterbauelement zur Stromverstaerkung
US3064132A (en) * 1959-11-10 1962-11-13 Westinghouse Electric Corp Semiconductor device

Also Published As

Publication number Publication date
FR1414611A (fr) 1965-10-15
DE1231353C2 (de) 1967-07-13
DE1231353B (de) 1966-12-29
GB1080627A (en) 1967-08-23
AT270765B (de) 1969-05-12
NL6413611A (de) 1965-05-27

Similar Documents

Publication Publication Date Title
CH468967A (de) Verfahren zur Herstellung von Aminen
AT257162B (de) Verfahren zur Herstellung thermoplastisch-elastischer Formmassen
AT266219B (de) Verfahren zur Herstellung von Halbleiteranordnungen
CH456963A (de) Verfahren zur Herstellung von fluorhaltigen Siliziumverbindungen
CH461639A (de) Verfahren zur Herstellung eines elektrolumineszierenden Halbleiterelementes
CH440263A (de) Verfahren zur Herstellung von Cyclododecen
AT252212B (de) Verfahren zur Herstellung von Dicarbinolen
CH430750A (de) Verfahren zur Herstellung von Azapentanolen
CH465208A (de) Verfahren zur Herstellung von Polyamidformkörpern
AT279572B (de) Verfahren zur Herstellung von ω-Lactamen
CH460759A (de) Verfahren zur Herstellung von 11a-Hydroxy-progesteron
CH437247A (de) Verfahren zur Herstellung von Ylenalen
CH444972A (de) Verfahren zur Herstellung eines Feldeffekt-Transistors
AT244447B (de) Verfahren zur Herstellung von Glühkörpern
CH478072A (de) Verfahren zur Herstellung von Olefinen
CH442294A (de) Verfahren zur Herstellung neuer 7a-Methyl-androstene
CH448127A (de) Verfahren zur Herstellung von Aminen
AT245562B (de) Verfahren zur Herstellung von Hexacyanbenzol
AT255397B (de) Verfahren zur Herstellung von ω-Lactamen
AT264710B (de) Verfahren zur Herstellung von Demethyltetracyclinen
AT243238B (de) Verfahren zur Herstellung von Trimethyladipinsäuredinitril
CH540895A (de) Verfahren zur Herstellung von Gonadienonen
CH453367A (de) Verfahren zur Herstellung von Thiaminen
AT248405B (de) Verfahren zur Herstellung von Tetrafluoräthylen
CH409574A (de) Verfahren zur Herstellung eines Halbleiter-Bauelementes