CH444972A - Verfahren zur Herstellung eines Feldeffekt-Transistors - Google Patents
Verfahren zur Herstellung eines Feldeffekt-TransistorsInfo
- Publication number
- CH444972A CH444972A CH104966A CH104966A CH444972A CH 444972 A CH444972 A CH 444972A CH 104966 A CH104966 A CH 104966A CH 104966 A CH104966 A CH 104966A CH 444972 A CH444972 A CH 444972A
- Authority
- CH
- Switzerland
- Prior art keywords
- production
- field effect
- effect transistor
- transistor
- field
- Prior art date
Links
- 230000005669 field effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/761—PN junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
- Element Separation (AREA)
- Electrodes Of Semiconductors (AREA)
- Thyristors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB4522863A GB1026489A (en) | 1963-11-15 | 1963-11-15 | Semiconductor device fabrication |
GB403065A GB1022159A (en) | 1963-11-15 | 1965-01-29 | Transistors |
Publications (1)
Publication Number | Publication Date |
---|---|
CH444972A true CH444972A (de) | 1967-10-15 |
Family
ID=26238778
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH104966A CH444972A (de) | 1963-11-15 | 1966-01-26 | Verfahren zur Herstellung eines Feldeffekt-Transistors |
Country Status (6)
Country | Link |
---|---|
BE (2) | BE655773A (de) |
CH (1) | CH444972A (de) |
DE (2) | DE1282795B (de) |
FR (1) | FR1413748A (de) |
GB (2) | GB1026489A (de) |
NL (2) | NL6412862A (de) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3538399A (en) * | 1968-05-15 | 1970-11-03 | Tektronix Inc | Pn junction gated field effect transistor having buried layer of low resistivity |
DE3302025A1 (de) * | 1983-01-22 | 1984-07-26 | Telefunken electronic GmbH, 6000 Frankfurt | Verfahren zum herstellen eines epibasistransistors |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE547274A (de) * | 1955-06-20 | |||
FR1341029A (fr) * | 1961-10-04 | 1963-10-25 | Westinghouse Electric Corp | Perfectionnement aux diodes semiconductrices à jonction |
-
1963
- 1963-11-15 GB GB4522863A patent/GB1026489A/en not_active Expired
-
1964
- 1964-11-04 NL NL6412862A patent/NL6412862A/xx unknown
- 1964-11-06 DE DEST22908A patent/DE1282795B/de active Pending
- 1964-11-13 FR FR994794A patent/FR1413748A/fr not_active Expired
- 1964-11-16 BE BE655773D patent/BE655773A/xx unknown
-
1965
- 1965-01-29 GB GB403065A patent/GB1022159A/en not_active Expired
-
1966
- 1966-01-14 DE DE19661564106 patent/DE1564106B2/de active Pending
- 1966-01-18 NL NL6600606A patent/NL6600606A/xx unknown
- 1966-01-26 CH CH104966A patent/CH444972A/de unknown
- 1966-01-27 BE BE675638D patent/BE675638A/xx unknown
Also Published As
Publication number | Publication date |
---|---|
FR1413748A (fr) | 1965-10-08 |
GB1026489A (en) | 1966-04-20 |
DE1564106B2 (de) | 1973-08-16 |
NL6600606A (de) | 1966-08-01 |
DE1282795B (de) | 1968-11-14 |
BE655773A (de) | 1965-05-17 |
GB1022159A (en) | 1966-03-09 |
BE675638A (de) | 1966-07-27 |
DE1564106A1 (de) | 1970-01-15 |
NL6412862A (de) | 1965-05-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CH468967A (de) | Verfahren zur Herstellung von Aminen | |
CH443219A (de) | Verfahren zur Herstellung eines Textilbehandlungsmittels | |
AT259226B (de) | Verfahren zur Herstellung eines Copolymerisates | |
CH447624A (de) | Verfahren zur Herstellung eines selbstschmierenden Werkstoffes | |
AT257162B (de) | Verfahren zur Herstellung thermoplastisch-elastischer Formmassen | |
CH490739A (de) | Verfahren zur Herstellung von Feldeffekttransistoren | |
CH431976A (de) | Verfahren zur Herstellung hochelastischer Formkörper | |
AT252212B (de) | Verfahren zur Herstellung von Dicarbinolen | |
CH432538A (de) | Verfahren zur Herstellung neuer Yohimban-Derivate | |
CH461639A (de) | Verfahren zur Herstellung eines elektrolumineszierenden Halbleiterelementes | |
CH454138A (de) | Verfahren zur Herstellung neuer Zinnkomplexsalze | |
CH444972A (de) | Verfahren zur Herstellung eines Feldeffekt-Transistors | |
AT257180B (de) | Verfahren zur Herstellung eines Übergangsstückes | |
CH487205A (de) | Verfahren zur Herstellung eines schnellhärtenden Harzes | |
AT254210B (de) | Verfahren zur Herstellung von Oniumsalzen | |
AT259749B (de) | Verfahren zur Herstellung elastischer Waren | |
CH471437A (de) | Verfahren zur Herstellung eines glasartigen Dielektrikums | |
CH429715A (de) | Verfahren zur Herstellung neuer 4-Halogen-androstene | |
AT246179B (de) | Verfahren zur Herstellung von Kunststoff-Klischees | |
AT258577B (de) | Verfahren zur Herstellung eines Alkydharzes | |
AT248694B (de) | Verfahren zur Herstellung neuer Telomerisate | |
AT258582B (de) | Verfahren zur Herstellung eines Epoxyd-Pfropf-Mischpolymerisates | |
CH439307A (de) | Verfahren zur Herstellung neuer Phthalazinium-Verbindungen | |
CH438133A (de) | Verfahren zur Herstellung eines Bindemittels | |
CH448127A (de) | Verfahren zur Herstellung von Aminen |