CH444972A - Verfahren zur Herstellung eines Feldeffekt-Transistors - Google Patents

Verfahren zur Herstellung eines Feldeffekt-Transistors

Info

Publication number
CH444972A
CH444972A CH104966A CH104966A CH444972A CH 444972 A CH444972 A CH 444972A CH 104966 A CH104966 A CH 104966A CH 104966 A CH104966 A CH 104966A CH 444972 A CH444972 A CH 444972A
Authority
CH
Switzerland
Prior art keywords
production
field effect
effect transistor
transistor
field
Prior art date
Application number
CH104966A
Other languages
English (en)
Inventor
Augustine Mckeown Patri Joseph
Original Assignee
Itt
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Itt filed Critical Itt
Publication of CH444972A publication Critical patent/CH444972A/de

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/40Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01Manufacture or treatment
    • H10W10/031Manufacture or treatment of isolation regions comprising PN junctions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/30Isolation regions comprising PN junctions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/40Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/43Encapsulations, e.g. protective coatings characterised by their materials comprising oxides, nitrides or carbides, e.g. ceramics or glasses
CH104966A 1963-11-15 1966-01-26 Verfahren zur Herstellung eines Feldeffekt-Transistors CH444972A (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB4522863A GB1026489A (en) 1963-11-15 1963-11-15 Semiconductor device fabrication
GB403065A GB1022159A (en) 1963-11-15 1965-01-29 Transistors

Publications (1)

Publication Number Publication Date
CH444972A true CH444972A (de) 1967-10-15

Family

ID=26238778

Family Applications (1)

Application Number Title Priority Date Filing Date
CH104966A CH444972A (de) 1963-11-15 1966-01-26 Verfahren zur Herstellung eines Feldeffekt-Transistors

Country Status (6)

Country Link
BE (2) BE655773A (de)
CH (1) CH444972A (de)
DE (2) DE1282795B (de)
FR (1) FR1413748A (de)
GB (2) GB1026489A (de)
NL (2) NL6412862A (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3538399A (en) * 1968-05-15 1970-11-03 Tektronix Inc Pn junction gated field effect transistor having buried layer of low resistivity
DE3302025A1 (de) * 1983-01-22 1984-07-26 Telefunken electronic GmbH, 6000 Frankfurt Verfahren zum herstellen eines epibasistransistors

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE547274A (de) * 1955-06-20
FR1341029A (fr) * 1961-10-04 1963-10-25 Westinghouse Electric Corp Perfectionnement aux diodes semiconductrices à jonction

Also Published As

Publication number Publication date
GB1026489A (en) 1966-04-20
NL6412862A (de) 1965-05-17
DE1282795B (de) 1968-11-14
BE655773A (de) 1965-05-17
DE1564106B2 (de) 1973-08-16
FR1413748A (fr) 1965-10-08
GB1022159A (en) 1966-03-09
NL6600606A (de) 1966-08-01
BE675638A (de) 1966-07-27
DE1564106A1 (de) 1970-01-15

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