CH444972A - Verfahren zur Herstellung eines Feldeffekt-Transistors - Google Patents

Verfahren zur Herstellung eines Feldeffekt-Transistors

Info

Publication number
CH444972A
CH444972A CH104966A CH104966A CH444972A CH 444972 A CH444972 A CH 444972A CH 104966 A CH104966 A CH 104966A CH 104966 A CH104966 A CH 104966A CH 444972 A CH444972 A CH 444972A
Authority
CH
Switzerland
Prior art keywords
production
field effect
effect transistor
transistor
field
Prior art date
Application number
CH104966A
Other languages
English (en)
Inventor
Augustine Mckeown Patri Joseph
Original Assignee
Itt
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Itt filed Critical Itt
Publication of CH444972A publication Critical patent/CH444972A/de

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/761PN junctions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291Oxides or nitrides or carbides, e.g. ceramics, glass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Element Separation (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thyristors (AREA)
CH104966A 1963-11-15 1966-01-26 Verfahren zur Herstellung eines Feldeffekt-Transistors CH444972A (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB4522863A GB1026489A (en) 1963-11-15 1963-11-15 Semiconductor device fabrication
GB403065A GB1022159A (en) 1963-11-15 1965-01-29 Transistors

Publications (1)

Publication Number Publication Date
CH444972A true CH444972A (de) 1967-10-15

Family

ID=26238778

Family Applications (1)

Application Number Title Priority Date Filing Date
CH104966A CH444972A (de) 1963-11-15 1966-01-26 Verfahren zur Herstellung eines Feldeffekt-Transistors

Country Status (6)

Country Link
BE (2) BE655773A (de)
CH (1) CH444972A (de)
DE (2) DE1282795B (de)
FR (1) FR1413748A (de)
GB (2) GB1026489A (de)
NL (2) NL6412862A (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3538399A (en) * 1968-05-15 1970-11-03 Tektronix Inc Pn junction gated field effect transistor having buried layer of low resistivity
DE3302025A1 (de) * 1983-01-22 1984-07-26 Telefunken electronic GmbH, 6000 Frankfurt Verfahren zum herstellen eines epibasistransistors

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE547274A (de) * 1955-06-20
FR1341029A (fr) * 1961-10-04 1963-10-25 Westinghouse Electric Corp Perfectionnement aux diodes semiconductrices à jonction

Also Published As

Publication number Publication date
FR1413748A (fr) 1965-10-08
GB1026489A (en) 1966-04-20
DE1564106B2 (de) 1973-08-16
NL6600606A (de) 1966-08-01
DE1282795B (de) 1968-11-14
BE655773A (de) 1965-05-17
GB1022159A (en) 1966-03-09
BE675638A (de) 1966-07-27
DE1564106A1 (de) 1970-01-15
NL6412862A (de) 1965-05-17

Similar Documents

Publication Publication Date Title
CH468967A (de) Verfahren zur Herstellung von Aminen
CH443219A (de) Verfahren zur Herstellung eines Textilbehandlungsmittels
AT259226B (de) Verfahren zur Herstellung eines Copolymerisates
CH447624A (de) Verfahren zur Herstellung eines selbstschmierenden Werkstoffes
AT257162B (de) Verfahren zur Herstellung thermoplastisch-elastischer Formmassen
CH490739A (de) Verfahren zur Herstellung von Feldeffekttransistoren
CH431976A (de) Verfahren zur Herstellung hochelastischer Formkörper
AT252212B (de) Verfahren zur Herstellung von Dicarbinolen
CH432538A (de) Verfahren zur Herstellung neuer Yohimban-Derivate
CH461639A (de) Verfahren zur Herstellung eines elektrolumineszierenden Halbleiterelementes
CH454138A (de) Verfahren zur Herstellung neuer Zinnkomplexsalze
CH444972A (de) Verfahren zur Herstellung eines Feldeffekt-Transistors
AT257180B (de) Verfahren zur Herstellung eines Übergangsstückes
CH487205A (de) Verfahren zur Herstellung eines schnellhärtenden Harzes
AT254210B (de) Verfahren zur Herstellung von Oniumsalzen
AT259749B (de) Verfahren zur Herstellung elastischer Waren
CH471437A (de) Verfahren zur Herstellung eines glasartigen Dielektrikums
CH429715A (de) Verfahren zur Herstellung neuer 4-Halogen-androstene
AT246179B (de) Verfahren zur Herstellung von Kunststoff-Klischees
AT258577B (de) Verfahren zur Herstellung eines Alkydharzes
AT248694B (de) Verfahren zur Herstellung neuer Telomerisate
AT258582B (de) Verfahren zur Herstellung eines Epoxyd-Pfropf-Mischpolymerisates
CH439307A (de) Verfahren zur Herstellung neuer Phthalazinium-Verbindungen
CH438133A (de) Verfahren zur Herstellung eines Bindemittels
CH448127A (de) Verfahren zur Herstellung von Aminen