GB1022159A - Transistors - Google Patents

Transistors

Info

Publication number
GB1022159A
GB1022159A GB403065A GB403065A GB1022159A GB 1022159 A GB1022159 A GB 1022159A GB 403065 A GB403065 A GB 403065A GB 403065 A GB403065 A GB 403065A GB 1022159 A GB1022159 A GB 1022159A
Authority
GB
United Kingdom
Prior art keywords
region
type
doped
impurity
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB403065A
Inventor
Patrick Joseph Augusti Mckeown
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to GB4522863A priority Critical patent/GB1026489A/en
Priority to NL6412862A priority patent/NL6412862A/xx
Priority to DEST22908A priority patent/DE1282795B/en
Priority to FR994794A priority patent/FR1413748A/en
Priority to BE655773D priority patent/BE655773A/xx
Priority to GB403065A priority patent/GB1022159A/en
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Priority to DE19661564106 priority patent/DE1564106B2/en
Priority to NL6600606A priority patent/NL6600606A/xx
Priority to CH104966A priority patent/CH444972A/en
Priority to BE675638D priority patent/BE675638A/xx
Priority to FR47598A priority patent/FR89862E/en
Publication of GB1022159A publication Critical patent/GB1022159A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Element Separation (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Thyristors (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

1,022,159. Field effect transistors. STANDARD TELEPHONES & CABLES Ltd. Jan. 29, 1965, No. 4030/65. Heading H1K. A field effect transistor is provided in a semi-conductor layer epitaxially grown on a substrate of the same conductivity type by a process in which the surface of the substrate, before the epitaxial growth, and of the grown layer are doped with the opposite type impurity, this impurity being diffused into the epitaxial layer until the impurity-doped regions link up to form an isolating region surrounding the region containing the channel of the F.E.T. The substrate 1 (Fig. 1A, not shown), may be of P-type silicon with a localized N-type surface region 2 formed by diffusion of antimony or arsenic through an oxide mask. An epitaxially grown P-type silicon layer is then applied over this surface and its own free surface further doped with phosphorus, again by masked diffusion, to form local N-type regions 4 (Fig. 1C, not shown). Continued diffusion causes the regions 2 and 4 to join into a single N-type isolating region surrounding the P-region 5 of Fig. 1D. To the surface of this region are applied ohmic contacts 7, 8 (Fig. 1F, not shown) and a rectifying gate contact 6 between them. In the device of (Fig. 2 not shown), this gate comprises a diffusively doped region linking up with the isolating region, but it could be separate from the latter in which case the latter could function as a second gate. The isolated F.E.T. may form one element in a monolithic circuit block.
GB403065A 1963-11-15 1965-01-29 Transistors Expired GB1022159A (en)

Priority Applications (11)

Application Number Priority Date Filing Date Title
GB4522863A GB1026489A (en) 1963-11-15 1963-11-15 Semiconductor device fabrication
NL6412862A NL6412862A (en) 1963-11-15 1964-11-04
DEST22908A DE1282795B (en) 1963-11-15 1964-11-06 Method for manufacturing semiconductor devices
FR994794A FR1413748A (en) 1963-11-15 1964-11-13 Semiconductor device manufacturing
BE655773D BE655773A (en) 1963-11-15 1964-11-16
GB403065A GB1022159A (en) 1963-11-15 1965-01-29 Transistors
DE19661564106 DE1564106B2 (en) 1963-11-15 1966-01-14 METHOD OF MANUFACTURING A FIELD EFFECT TRANSISTOR ELEMENT
NL6600606A NL6600606A (en) 1963-11-15 1966-01-18
CH104966A CH444972A (en) 1963-11-15 1966-01-26 Process for the production of a field effect transistor
BE675638D BE675638A (en) 1963-11-15 1966-01-27
FR47598A FR89862E (en) 1963-11-15 1966-01-28 Semiconductor device manufacturing

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB4522863A GB1026489A (en) 1963-11-15 1963-11-15 Semiconductor device fabrication
GB403065A GB1022159A (en) 1963-11-15 1965-01-29 Transistors

Publications (1)

Publication Number Publication Date
GB1022159A true GB1022159A (en) 1966-03-09

Family

ID=26238778

Family Applications (2)

Application Number Title Priority Date Filing Date
GB4522863A Expired GB1026489A (en) 1963-11-15 1963-11-15 Semiconductor device fabrication
GB403065A Expired GB1022159A (en) 1963-11-15 1965-01-29 Transistors

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GB4522863A Expired GB1026489A (en) 1963-11-15 1963-11-15 Semiconductor device fabrication

Country Status (6)

Country Link
BE (2) BE655773A (en)
CH (1) CH444972A (en)
DE (2) DE1282795B (en)
FR (1) FR1413748A (en)
GB (2) GB1026489A (en)
NL (2) NL6412862A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2008599A1 (en) * 1968-05-15 1970-01-23 Tektronix Inc

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3302025A1 (en) * 1983-01-22 1984-07-26 Telefunken electronic GmbH, 6000 Frankfurt Process for producing an epitaxial-base transistor

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE547274A (en) * 1955-06-20
FR1341029A (en) * 1961-10-04 1963-10-25 Westinghouse Electric Corp Junction semiconductor diode development

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2008599A1 (en) * 1968-05-15 1970-01-23 Tektronix Inc

Also Published As

Publication number Publication date
FR1413748A (en) 1965-10-08
GB1026489A (en) 1966-04-20
DE1564106B2 (en) 1973-08-16
BE675638A (en) 1966-07-27
NL6600606A (en) 1966-08-01
DE1564106A1 (en) 1970-01-15
DE1282795B (en) 1968-11-14
BE655773A (en) 1965-05-17
CH444972A (en) 1967-10-15
NL6412862A (en) 1965-05-17

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