FR1341029A - Junction semiconductor diode development - Google Patents

Junction semiconductor diode development

Info

Publication number
FR1341029A
FR1341029A FR911331A FR911331A FR1341029A FR 1341029 A FR1341029 A FR 1341029A FR 911331 A FR911331 A FR 911331A FR 911331 A FR911331 A FR 911331A FR 1341029 A FR1341029 A FR 1341029A
Authority
FR
France
Prior art keywords
semiconductor diode
junction semiconductor
development
diode development
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR911331A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CBS Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US142802A external-priority patent/US3210620A/en
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Priority to FR911331A priority Critical patent/FR1341029A/en
Application granted granted Critical
Publication of FR1341029A publication Critical patent/FR1341029A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/075Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
    • H01L27/0755Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/082Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using bipolar transistors
    • H03K19/084Diode-transistor logic
FR911331A 1961-10-04 1962-10-04 Junction semiconductor diode development Expired FR1341029A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR911331A FR1341029A (en) 1961-10-04 1962-10-04 Junction semiconductor diode development

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US142802A US3210620A (en) 1961-10-04 1961-10-04 Semiconductor device providing diode functions
FR911331A FR1341029A (en) 1961-10-04 1962-10-04 Junction semiconductor diode development

Publications (1)

Publication Number Publication Date
FR1341029A true FR1341029A (en) 1963-10-25

Family

ID=26197819

Family Applications (1)

Application Number Title Priority Date Filing Date
FR911331A Expired FR1341029A (en) 1961-10-04 1962-10-04 Junction semiconductor diode development

Country Status (1)

Country Link
FR (1) FR1341029A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1282795B (en) * 1963-11-15 1968-11-14 Itt Ind Ges Mit Beschraenkter Method for manufacturing semiconductor devices

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1282795B (en) * 1963-11-15 1968-11-14 Itt Ind Ges Mit Beschraenkter Method for manufacturing semiconductor devices

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