FR1341029A - Junction semiconductor diode development - Google Patents
Junction semiconductor diode developmentInfo
- Publication number
- FR1341029A FR1341029A FR911331A FR911331A FR1341029A FR 1341029 A FR1341029 A FR 1341029A FR 911331 A FR911331 A FR 911331A FR 911331 A FR911331 A FR 911331A FR 1341029 A FR1341029 A FR 1341029A
- Authority
- FR
- France
- Prior art keywords
- semiconductor diode
- junction semiconductor
- development
- diode development
- junction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
- H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
- H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
- H03K19/082—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using bipolar transistors
- H03K19/084—Diode-transistor logic
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR911331A FR1341029A (en) | 1961-10-04 | 1962-10-04 | Junction semiconductor diode development |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US142802A US3210620A (en) | 1961-10-04 | 1961-10-04 | Semiconductor device providing diode functions |
FR911331A FR1341029A (en) | 1961-10-04 | 1962-10-04 | Junction semiconductor diode development |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1341029A true FR1341029A (en) | 1963-10-25 |
Family
ID=26197819
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR911331A Expired FR1341029A (en) | 1961-10-04 | 1962-10-04 | Junction semiconductor diode development |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR1341029A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1282795B (en) * | 1963-11-15 | 1968-11-14 | Itt Ind Ges Mit Beschraenkter | Method for manufacturing semiconductor devices |
-
1962
- 1962-10-04 FR FR911331A patent/FR1341029A/en not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1282795B (en) * | 1963-11-15 | 1968-11-14 | Itt Ind Ges Mit Beschraenkter | Method for manufacturing semiconductor devices |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
NL139425B (en) | SEMI-CONDUCTOR DIODE. | |
FR1232232A (en) | Semiconductor diode | |
FR1291322A (en) | Semiconductor refinements | |
FR1419323A (en) | Semiconductor diode enhancements | |
FR1332443A (en) | Tunnel diode improvements | |
CH379645A (en) | Semiconductor rectifier system | |
FR1361215A (en) | Junction semiconductor device | |
FR1388458A (en) | Controlled semiconductor rectifier phsh-pull converter | |
FR1269094A (en) | Semiconductor diode | |
FR1280466A (en) | Semiconductor refinements | |
CH389785A (en) | Encapsulated semiconductor diode | |
CH419355A (en) | Semiconductor rectifier | |
BE602288A (en) | Self-oscillating converter with controlled semiconductor rectifiers. | |
FR1341029A (en) | Junction semiconductor diode development | |
FR1267262A (en) | Improvements to microwave semiconductor diodes | |
FR1298448A (en) | Diode modulator | |
FR1284371A (en) | Semiconductor diode | |
FR1230268A (en) | Semiconductor diodes | |
FR1196142A (en) | Concentric Semiconductor Diode | |
BE615222A (en) | Tunnel diode circuits | |
FR1313842A (en) | Advanced diode rectifier | |
FR1288086A (en) | Parametric diode improvements | |
FR1396723A (en) | Semiconductor diode | |
FR1258938A (en) | Improvements to microwave semiconductor diodes | |
FR1345448A (en) | Controllable semiconductor valve rectifier |