FR1413748A - Semiconductor device manufacturing - Google Patents

Semiconductor device manufacturing

Info

Publication number
FR1413748A
FR1413748A FR994794A FR994794A FR1413748A FR 1413748 A FR1413748 A FR 1413748A FR 994794 A FR994794 A FR 994794A FR 994794 A FR994794 A FR 994794A FR 1413748 A FR1413748 A FR 1413748A
Authority
FR
France
Prior art keywords
semiconductor device
device manufacturing
manufacturing
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR994794A
Other languages
French (fr)
Inventor
Dave Francis Thomas Dunster
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Standard Electric Corp
Original Assignee
International Standard Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Standard Electric Corp filed Critical International Standard Electric Corp
Priority to FR999918A priority Critical patent/FR87077E/en
Application granted granted Critical
Publication of FR1413748A publication Critical patent/FR1413748A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/761PN junctions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291Oxides or nitrides or carbides, e.g. ceramics, glass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
FR994794A 1963-11-15 1964-11-13 Semiconductor device manufacturing Expired FR1413748A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR999918A FR87077E (en) 1963-11-15 1964-12-24 Semiconductor device manufacturing

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB4522863A GB1026489A (en) 1963-11-15 1963-11-15 Semiconductor device fabrication
GB403065A GB1022159A (en) 1963-11-15 1965-01-29 Transistors

Publications (1)

Publication Number Publication Date
FR1413748A true FR1413748A (en) 1965-10-08

Family

ID=26238778

Family Applications (1)

Application Number Title Priority Date Filing Date
FR994794A Expired FR1413748A (en) 1963-11-15 1964-11-13 Semiconductor device manufacturing

Country Status (6)

Country Link
BE (2) BE655773A (en)
CH (1) CH444972A (en)
DE (2) DE1282795B (en)
FR (1) FR1413748A (en)
GB (2) GB1026489A (en)
NL (2) NL6412862A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3302025A1 (en) * 1983-01-22 1984-07-26 Telefunken electronic GmbH, 6000 Frankfurt Process for producing an epitaxial-base transistor

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3538399A (en) * 1968-05-15 1970-11-03 Tektronix Inc Pn junction gated field effect transistor having buried layer of low resistivity

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL207910A (en) * 1955-06-20
FR1341029A (en) * 1961-10-04 1963-10-25 Westinghouse Electric Corp Junction semiconductor diode development

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3302025A1 (en) * 1983-01-22 1984-07-26 Telefunken electronic GmbH, 6000 Frankfurt Process for producing an epitaxial-base transistor

Also Published As

Publication number Publication date
NL6600606A (en) 1966-08-01
GB1026489A (en) 1966-04-20
DE1564106B2 (en) 1973-08-16
BE675638A (en) 1966-07-27
GB1022159A (en) 1966-03-09
DE1282795B (en) 1968-11-14
NL6412862A (en) 1965-05-17
BE655773A (en) 1965-05-17
DE1564106A1 (en) 1970-01-15
CH444972A (en) 1967-10-15

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