GB1080627A - Electroluminescent device - Google Patents

Electroluminescent device

Info

Publication number
GB1080627A
GB1080627A GB4368164A GB4368164A GB1080627A GB 1080627 A GB1080627 A GB 1080627A GB 4368164 A GB4368164 A GB 4368164A GB 4368164 A GB4368164 A GB 4368164A GB 1080627 A GB1080627 A GB 1080627A
Authority
GB
United Kingdom
Prior art keywords
wafer
diode
radiation
zone
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4368164A
Inventor
William Paul Dumke
Ralph Sidney Levitt
Kurt Weiser
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US326171A external-priority patent/US3283160A/en
Priority claimed from US326114A external-priority patent/US3267294A/en
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB1080627A publication Critical patent/GB1080627A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
    • H05B33/145—Arrangements of the electroluminescent material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/14—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices
    • H01L31/147—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
    • H01L31/153—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers formed in, or on, a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Led Devices (AREA)

Abstract

<PICT:1080627/C4-C5/1> A light-emitting device comprises an NPP zone structure in which the outer P region is doped with shallow level acceptors while the central zone contains deep level acceptors and is of higher resistivity than either outer zone. A typical device, Fig. 8, with a built-in injection luminescent diode is made by diffusing manganese, cobalt or chromium into a selenium, tellurium or silicon doped N-type gallium arsenide wafer. If one face of the wafer is not masked during the diffusion the P layer formed thereon is removed. The same result is more economically achieved by cutting the wafer in half. Zinc, cadmium or magnesium is then diffused into the wafer to a lesser depth to form P zones on both faces, the wafer diced and ohmic contacts made as shown to individual elements using tin on the N region and indium on the P zones. A reflective coating 56 directs light from diode 16-50 on to radiation sensitive element 12, 14, 16. Another embodiment is similar but lacks P region 50. In this case a separate radiation source is used and the device used as a light amplifier or, if the photons from the source are less energetic than those generated by the diode, as a quartum converter. The diode is made as described above except that the second P zone is removed or its formation avoided by masking, and may have a dichroic filter on its N surface to reflect back radiation generated within while admitting longer wavelength radiation from the source. In the Fig. 7 circuit, not shown, the incident radiation is chopped at a frequency less than that of the alternating voltage fed to the diode. A matrix of diodes may be used as an infra-red image converter or, if a gallium phosphide-arsenide alloy is used for the body to make infra-red images visible.
GB4368164A 1963-11-26 1964-10-27 Electroluminescent device Expired GB1080627A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US326171A US3283160A (en) 1963-11-26 1963-11-26 Photoelectronic semiconductor devices comprising an injection luminescent diode and a light sensitive diode with a common n-region
US326114A US3267294A (en) 1963-11-26 1963-11-26 Solid state light emissive diodes having negative resistance characteristics

Publications (1)

Publication Number Publication Date
GB1080627A true GB1080627A (en) 1967-08-23

Family

ID=26985249

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4368164A Expired GB1080627A (en) 1963-11-26 1964-10-27 Electroluminescent device

Country Status (6)

Country Link
AT (1) AT270765B (en)
CH (1) CH461639A (en)
DE (1) DE1231353B (en)
FR (1) FR1414611A (en)
GB (1) GB1080627A (en)
NL (1) NL6413611A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5023268B1 (en) * 1969-12-25 1975-08-06
JPS5128783A (en) * 1974-09-05 1976-03-11 Oki Electric Ind Co Ltd
JPS53166383U (en) * 1978-06-01 1978-12-26
JPS53166363U (en) * 1978-05-02 1978-12-26

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3625781A (en) * 1969-05-09 1971-12-07 Ibm Method of reducing carrier lifetime in semiconductor structures

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1048346B (en) * 1959-01-08
US2817783A (en) * 1955-07-13 1957-12-24 Sylvania Electric Prod Electroluminescent device
DE1052563B (en) * 1957-03-05 1959-03-12 Albrecht Fischer Dipl Phys Arrangement and manufacturing process for injection electroluminescent lamps
DE1054179B (en) * 1957-09-25 1959-04-02 Siemens Ag Semiconductor component for power amplification
US3064132A (en) * 1959-11-10 1962-11-13 Westinghouse Electric Corp Semiconductor device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5023268B1 (en) * 1969-12-25 1975-08-06
JPS5128783A (en) * 1974-09-05 1976-03-11 Oki Electric Ind Co Ltd
JPS53166363U (en) * 1978-05-02 1978-12-26
JPS5714408Y2 (en) * 1978-05-02 1982-03-25
JPS53166383U (en) * 1978-06-01 1978-12-26

Also Published As

Publication number Publication date
DE1231353C2 (en) 1967-07-13
AT270765B (en) 1969-05-12
CH461639A (en) 1968-08-31
NL6413611A (en) 1965-05-27
DE1231353B (en) 1966-12-29
FR1414611A (en) 1965-10-15

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