FR1414611A - Diodes photo-émissives à l'état solide présentant des caractéristiques de résistances négatives - Google Patents

Diodes photo-émissives à l'état solide présentant des caractéristiques de résistances négatives

Info

Publication number
FR1414611A
FR1414611A FR996193A FR996193A FR1414611A FR 1414611 A FR1414611 A FR 1414611A FR 996193 A FR996193 A FR 996193A FR 996193 A FR996193 A FR 996193A FR 1414611 A FR1414611 A FR 1414611A
Authority
FR
France
Prior art keywords
solid state
resistance characteristics
negative resistance
exhibiting negative
state photo
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR996193A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US326171A external-priority patent/US3283160A/en
Priority claimed from US326114A external-priority patent/US3267294A/en
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of FR1414611A publication Critical patent/FR1414611A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
    • H05B33/145—Arrangements of the electroluminescent material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/14—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices
    • H01L31/147—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
    • H01L31/153—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers formed in, or on, a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Led Devices (AREA)
FR996193A 1963-11-26 1964-11-25 Diodes photo-émissives à l'état solide présentant des caractéristiques de résistances négatives Expired FR1414611A (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US326171A US3283160A (en) 1963-11-26 1963-11-26 Photoelectronic semiconductor devices comprising an injection luminescent diode and a light sensitive diode with a common n-region
US326114A US3267294A (en) 1963-11-26 1963-11-26 Solid state light emissive diodes having negative resistance characteristics

Publications (1)

Publication Number Publication Date
FR1414611A true FR1414611A (fr) 1965-10-15

Family

ID=26985249

Family Applications (1)

Application Number Title Priority Date Filing Date
FR996193A Expired FR1414611A (fr) 1963-11-26 1964-11-25 Diodes photo-émissives à l'état solide présentant des caractéristiques de résistances négatives

Country Status (6)

Country Link
AT (1) AT270765B (fr)
CH (1) CH461639A (fr)
DE (1) DE1231353B (fr)
FR (1) FR1414611A (fr)
GB (1) GB1080627A (fr)
NL (1) NL6413611A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2042505A1 (fr) * 1969-05-09 1971-02-12 Eastman Kodak Co

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5023268B1 (fr) * 1969-12-25 1975-08-06
JPS5128783A (fr) * 1974-09-05 1976-03-11 Oki Electric Ind Co Ltd
JPS5714408Y2 (fr) * 1978-05-02 1982-03-25
JPS53166383U (fr) * 1978-06-01 1978-12-26

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1048346B (fr) * 1959-01-08
US2817783A (en) * 1955-07-13 1957-12-24 Sylvania Electric Prod Electroluminescent device
DE1052563B (de) * 1957-03-05 1959-03-12 Albrecht Fischer Dipl Phys Anordnung und Herstellungsverfahren fuer Injektions-Elektrolumineszenzlampen
DE1054179B (de) * 1957-09-25 1959-04-02 Siemens Ag Halbleiterbauelement zur Stromverstaerkung
US3064132A (en) * 1959-11-10 1962-11-13 Westinghouse Electric Corp Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2042505A1 (fr) * 1969-05-09 1971-02-12 Eastman Kodak Co

Also Published As

Publication number Publication date
DE1231353C2 (fr) 1967-07-13
AT270765B (de) 1969-05-12
CH461639A (de) 1968-08-31
GB1080627A (en) 1967-08-23
NL6413611A (fr) 1965-05-27
DE1231353B (de) 1966-12-29

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