FR1414611A - Diodes photo-émissives à l'état solide présentant des caractéristiques de résistances négatives - Google Patents
Diodes photo-émissives à l'état solide présentant des caractéristiques de résistances négativesInfo
- Publication number
- FR1414611A FR1414611A FR996193A FR996193A FR1414611A FR 1414611 A FR1414611 A FR 1414611A FR 996193 A FR996193 A FR 996193A FR 996193 A FR996193 A FR 996193A FR 1414611 A FR1414611 A FR 1414611A
- Authority
- FR
- France
- Prior art keywords
- solid state
- resistance characteristics
- negative resistance
- exhibiting negative
- state photo
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000001747 exhibiting effect Effects 0.000 title 1
- 239000007787 solid Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
- H05B33/145—Arrangements of the electroluminescent material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/14—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices
- H01L31/147—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
- H01L31/153—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers formed in, or on, a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Led Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US326171A US3283160A (en) | 1963-11-26 | 1963-11-26 | Photoelectronic semiconductor devices comprising an injection luminescent diode and a light sensitive diode with a common n-region |
US326114A US3267294A (en) | 1963-11-26 | 1963-11-26 | Solid state light emissive diodes having negative resistance characteristics |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1414611A true FR1414611A (fr) | 1965-10-15 |
Family
ID=26985249
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR996193A Expired FR1414611A (fr) | 1963-11-26 | 1964-11-25 | Diodes photo-émissives à l'état solide présentant des caractéristiques de résistances négatives |
Country Status (6)
Country | Link |
---|---|
AT (1) | AT270765B (fr) |
CH (1) | CH461639A (fr) |
DE (1) | DE1231353B (fr) |
FR (1) | FR1414611A (fr) |
GB (1) | GB1080627A (fr) |
NL (1) | NL6413611A (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2042505A1 (fr) * | 1969-05-09 | 1971-02-12 | Eastman Kodak Co |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5023268B1 (fr) * | 1969-12-25 | 1975-08-06 | ||
JPS5128783A (fr) * | 1974-09-05 | 1976-03-11 | Oki Electric Ind Co Ltd | |
JPS5714408Y2 (fr) * | 1978-05-02 | 1982-03-25 | ||
JPS53166383U (fr) * | 1978-06-01 | 1978-12-26 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1048346B (fr) * | 1959-01-08 | |||
US2817783A (en) * | 1955-07-13 | 1957-12-24 | Sylvania Electric Prod | Electroluminescent device |
DE1052563B (de) * | 1957-03-05 | 1959-03-12 | Albrecht Fischer Dipl Phys | Anordnung und Herstellungsverfahren fuer Injektions-Elektrolumineszenzlampen |
DE1054179B (de) * | 1957-09-25 | 1959-04-02 | Siemens Ag | Halbleiterbauelement zur Stromverstaerkung |
US3064132A (en) * | 1959-11-10 | 1962-11-13 | Westinghouse Electric Corp | Semiconductor device |
-
1964
- 1964-10-27 GB GB4368164A patent/GB1080627A/en not_active Expired
- 1964-11-23 AT AT990564A patent/AT270765B/de active
- 1964-11-24 NL NL6413611A patent/NL6413611A/xx unknown
- 1964-11-24 DE DE1964J0026962 patent/DE1231353B/de active Granted
- 1964-11-25 FR FR996193A patent/FR1414611A/fr not_active Expired
- 1964-11-26 CH CH1528464A patent/CH461639A/de unknown
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2042505A1 (fr) * | 1969-05-09 | 1971-02-12 | Eastman Kodak Co |
Also Published As
Publication number | Publication date |
---|---|
DE1231353C2 (fr) | 1967-07-13 |
AT270765B (de) | 1969-05-12 |
CH461639A (de) | 1968-08-31 |
GB1080627A (en) | 1967-08-23 |
NL6413611A (fr) | 1965-05-27 |
DE1231353B (de) | 1966-12-29 |
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