DE1231353B - Elektrolumineszente Halbleiterdiode und Verfahren zu ihrer Herstellung - Google Patents
Elektrolumineszente Halbleiterdiode und Verfahren zu ihrer HerstellungInfo
- Publication number
- DE1231353B DE1231353B DE1964J0026962 DEJ0026962A DE1231353B DE 1231353 B DE1231353 B DE 1231353B DE 1964J0026962 DE1964J0026962 DE 1964J0026962 DE J0026962 A DEJ0026962 A DE J0026962A DE 1231353 B DE1231353 B DE 1231353B
- Authority
- DE
- Germany
- Prior art keywords
- layer
- diode
- electroluminescent semiconductor
- diffusion
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 39
- 238000000034 method Methods 0.000 title claims description 20
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 230000008569 process Effects 0.000 title description 9
- 238000009792 diffusion process Methods 0.000 claims description 37
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 29
- 239000011701 zinc Substances 0.000 claims description 29
- 229910052725 zinc Inorganic materials 0.000 claims description 28
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims description 25
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 24
- 239000011572 manganese Substances 0.000 claims description 24
- 229910052748 manganese Inorganic materials 0.000 claims description 23
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 22
- 239000000370 acceptor Substances 0.000 claims description 19
- 230000005855 radiation Effects 0.000 claims description 13
- 229910052793 cadmium Inorganic materials 0.000 claims description 6
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 6
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims description 6
- 230000007704 transition Effects 0.000 claims description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 5
- 230000035515 penetration Effects 0.000 claims description 5
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 239000011651 chromium Substances 0.000 claims description 4
- 229910052749 magnesium Inorganic materials 0.000 claims description 4
- 239000011777 magnesium Substances 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 229910052714 tellurium Inorganic materials 0.000 claims description 4
- 230000008859 change Effects 0.000 claims description 3
- 239000010941 cobalt Substances 0.000 claims description 3
- 229910017052 cobalt Inorganic materials 0.000 claims description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 3
- 239000007858 starting material Substances 0.000 claims description 3
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 3
- 238000004020 luminiscence type Methods 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 230000000630 rising effect Effects 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 68
- 239000013078 crystal Substances 0.000 description 18
- 239000012535 impurity Substances 0.000 description 13
- 230000003595 spectral effect Effects 0.000 description 9
- 238000005215 recombination Methods 0.000 description 7
- 230000006798 recombination Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 5
- 238000009826 distribution Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 239000010453 quartz Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000000227 grinding Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000007935 neutral effect Effects 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- PTFCDOFLOPIGGS-UHFFFAOYSA-N Zinc dication Chemical compound [Zn+2] PTFCDOFLOPIGGS-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- MQHWFIOJQSCFNM-UHFFFAOYSA-L Magnesium salicylate Chemical compound [Mg+2].OC1=CC=CC=C1C([O-])=O.OC1=CC=CC=C1C([O-])=O MQHWFIOJQSCFNM-UHFFFAOYSA-L 0.000 description 1
- 239000005083 Zinc sulfide Substances 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- -1 arsenide Chemical compound 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000000866 electrolytic etching Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- ZGAZQDZRSBOHRX-UHFFFAOYSA-N gallium;phosphite Chemical compound [Ga+3].[O-]P([O-])[O-] ZGAZQDZRSBOHRX-UHFFFAOYSA-N 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 229910001437 manganese ion Inorganic materials 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000003449 preventive effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
- H05B33/145—Arrangements of the electroluminescent material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/14—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices
- H01L31/147—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
- H01L31/153—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers formed in, or on, a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Led Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US326171A US3283160A (en) | 1963-11-26 | 1963-11-26 | Photoelectronic semiconductor devices comprising an injection luminescent diode and a light sensitive diode with a common n-region |
| US326114A US3267294A (en) | 1963-11-26 | 1963-11-26 | Solid state light emissive diodes having negative resistance characteristics |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE1231353B true DE1231353B (de) | 1966-12-29 |
| DE1231353C2 DE1231353C2 (fr) | 1967-07-13 |
Family
ID=26985249
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE1964J0026962 Granted DE1231353B (de) | 1963-11-26 | 1964-11-24 | Elektrolumineszente Halbleiterdiode und Verfahren zu ihrer Herstellung |
Country Status (6)
| Country | Link |
|---|---|
| AT (1) | AT270765B (fr) |
| CH (1) | CH461639A (fr) |
| DE (1) | DE1231353B (fr) |
| FR (1) | FR1414611A (fr) |
| GB (1) | GB1080627A (fr) |
| NL (1) | NL6413611A (fr) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3625781A (en) * | 1969-05-09 | 1971-12-07 | Ibm | Method of reducing carrier lifetime in semiconductor structures |
| JPS5023268B1 (fr) * | 1969-12-25 | 1975-08-06 | ||
| JPS5128783A (fr) * | 1974-09-05 | 1976-03-11 | Oki Electric Ind Co Ltd | |
| JPS5714408Y2 (fr) * | 1978-05-02 | 1982-03-25 | ||
| JPS53166383U (fr) * | 1978-06-01 | 1978-12-26 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2817783A (en) * | 1955-07-13 | 1957-12-24 | Sylvania Electric Prod | Electroluminescent device |
| DE1048346B (fr) * | 1959-01-08 | |||
| DE1052563B (de) * | 1957-03-05 | 1959-03-12 | Albrecht Fischer Dipl Phys | Anordnung und Herstellungsverfahren fuer Injektions-Elektrolumineszenzlampen |
| DE1054179B (de) * | 1957-09-25 | 1959-04-02 | Siemens Ag | Halbleiterbauelement zur Stromverstaerkung |
| US3064132A (en) * | 1959-11-10 | 1962-11-13 | Westinghouse Electric Corp | Semiconductor device |
-
1964
- 1964-10-27 GB GB4368164A patent/GB1080627A/en not_active Expired
- 1964-11-23 AT AT990564A patent/AT270765B/de active
- 1964-11-24 NL NL6413611A patent/NL6413611A/xx unknown
- 1964-11-24 DE DE1964J0026962 patent/DE1231353B/de active Granted
- 1964-11-25 FR FR996193A patent/FR1414611A/fr not_active Expired
- 1964-11-26 CH CH1528464A patent/CH461639A/de unknown
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1048346B (fr) * | 1959-01-08 | |||
| US2817783A (en) * | 1955-07-13 | 1957-12-24 | Sylvania Electric Prod | Electroluminescent device |
| DE1052563B (de) * | 1957-03-05 | 1959-03-12 | Albrecht Fischer Dipl Phys | Anordnung und Herstellungsverfahren fuer Injektions-Elektrolumineszenzlampen |
| DE1054179B (de) * | 1957-09-25 | 1959-04-02 | Siemens Ag | Halbleiterbauelement zur Stromverstaerkung |
| US3064132A (en) * | 1959-11-10 | 1962-11-13 | Westinghouse Electric Corp | Semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| DE1231353C2 (fr) | 1967-07-13 |
| AT270765B (de) | 1969-05-12 |
| CH461639A (de) | 1968-08-31 |
| GB1080627A (en) | 1967-08-23 |
| NL6413611A (fr) | 1965-05-27 |
| FR1414611A (fr) | 1965-10-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE1021891C2 (de) | Halbleiterdiode fuer Schaltstromkreise | |
| DE891580C (de) | Lichtelektrische Halbleitereinrichtungen | |
| DE1180458B (de) | Einrichtung zur Erzeugung kohaerenter Strahlung in einem einkristallinen Halbleiter | |
| DE1278003B (de) | Elektrolumineszente Halbleiterdiode fuer optische Sender oder Verstaerker | |
| DE3011484A1 (de) | Optisch steuerbarer, mit statischer induktion arbeitender thyristor | |
| DE4126955C2 (de) | Verfahren zum Herstellen von elektrolumineszenten Siliziumstrukturen | |
| DE2039381A1 (de) | Verfahren zur Herstellung einer Elektrolumineszenz-Vorrichtung und Vorrichtung dieser Art | |
| DE1219121B (de) | Elektrolumineszente Halbleiter-Leuchtflaeche | |
| DE1489319B2 (de) | Halbleiterhchtquelle | |
| DE1464711C3 (de) | Diodenlaser | |
| DE1489942B1 (de) | Schaltungsanordnung zur Frequenzmodulation eines optischen Senders (Laser) mit einer Halbleiterdiode als stimulierbarem Medium | |
| DE1231353B (de) | Elektrolumineszente Halbleiterdiode und Verfahren zu ihrer Herstellung | |
| DE69005179T2 (de) | Anordnungen mit einer asymmetrischen Delta-Dotierung. | |
| DE2329697A1 (de) | Lichtemittierende halbleiteranordnung | |
| DE69924906T2 (de) | Elektrisches Pumpen von mit seltenen Erden dotiertem Silizium für optische Emission | |
| DE1006531B (de) | Asymmetrisch leitende Halbleiteranordnung | |
| EP1284038A1 (fr) | Composant semi-conducteur luminescent | |
| DE3324086A1 (de) | Gruenes licht emittierende znse-diode | |
| DE1489942C (de) | Schaltungsanordnung zur Frequenzmodulation eines optischen Senders (Laser) mit einer Halbleiterdiode als stimulierbarem Medium | |
| DE1564142A1 (de) | Elektrolumineszentes Halbleiterbauelement | |
| DE1464331C3 (de) | Elektrisch steuerbares opto-elektronisches Halbleiterbauelement | |
| DE2430873A1 (de) | Geschuetzte elektrolumineszierende diode | |
| DE1277457B (de) | Strahlungsnachweisgeraet | |
| DE1537138C (de) | Festkörpersichteinrichtung | |
| DE2030368A1 (de) | Halbleiter |