EP1284038A1 - Composant semi-conducteur luminescent - Google Patents
Composant semi-conducteur luminescentInfo
- Publication number
- EP1284038A1 EP1284038A1 EP01947152A EP01947152A EP1284038A1 EP 1284038 A1 EP1284038 A1 EP 1284038A1 EP 01947152 A EP01947152 A EP 01947152A EP 01947152 A EP01947152 A EP 01947152A EP 1284038 A1 EP1284038 A1 EP 1284038A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- layer
- doped
- semiconductor component
- light
- layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 58
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 230000000737 periodic effect Effects 0.000 claims abstract description 9
- 229910052725 zinc Inorganic materials 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 7
- 229910052793 cadmium Inorganic materials 0.000 claims description 6
- 229910007709 ZnTe Inorganic materials 0.000 claims description 5
- 229910052711 selenium Inorganic materials 0.000 claims description 5
- 230000007423 decrease Effects 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 2
- 229910052749 magnesium Inorganic materials 0.000 claims 3
- 238000000407 epitaxy Methods 0.000 abstract 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
- 229910052757 nitrogen Inorganic materials 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 230000003595 spectral effect Effects 0.000 description 6
- 239000011701 zinc Substances 0.000 description 6
- PEUPCBAALXHYHP-UHFFFAOYSA-L zinc;selenite Chemical compound [Zn+2].[O-][Se]([O-])=O PEUPCBAALXHYHP-UHFFFAOYSA-L 0.000 description 6
- 230000007547 defect Effects 0.000 description 5
- 230000005855 radiation Effects 0.000 description 5
- 239000011669 selenium Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 241001101998 Galium Species 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- 238000004364 calculation method Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- JIAARYAFYJHUJI-UHFFFAOYSA-L zinc dichloride Chemical compound [Cl-].[Cl-].[Zn+2] JIAARYAFYJHUJI-UHFFFAOYSA-L 0.000 description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000012876 carrier material Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000011664 signaling Effects 0.000 description 1
- 238000012549 training Methods 0.000 description 1
- 235000005074 zinc chloride Nutrition 0.000 description 1
- 239000011592 zinc chloride Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/28—Materials of the light emitting region containing only elements of Group II and Group VI of the Periodic Table
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/327—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIBVI compounds, e.g. ZnCdSe-laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/347—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIBVI compounds, e.g. ZnCdSe- laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0083—Processes for devices with an active region comprising only II-VI compounds
- H01L33/0087—Processes for devices with an active region comprising only II-VI compounds with a substrate not being a II-VI compound
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/0218—Substrates comprising semiconducting materials from different groups of the periodic system than the active layer
Definitions
- the invention relates to a light-emitting semiconductor component with a number of layers which predominantly consist of elements of groups II and VI of the periodic table.
- the layers are applied epitaxially on a substrate, preferably made of InP, and have a p-doped cover layer and an n-doped cover layer, the lattice constants of which correspond to those of the substrate.
- An undoped active layer lies between the two layers, which, in cooperation with its neighboring layers, forms a quantum well structure.
- Semiconductor components with a quantum well structure are used in wide areas of technology. They are used as light emitting diodes, for example for signaling different operating states, or as laser diodes, e.g. B. in the optical recording or reproduction of images and sound on carrier material, laser printers, medical laser devices or material processing. Laser diodes of this type are characterized by a low threshold current, high output power and low beam divergence. These properties have led to light-emitting semiconductor components with a quantum well structure occupying a preferred position in application and development.
- GaAs galium arsenide
- GaAlAs galium aluminum arsenide
- GaN galium nitride
- ZnSeTe forms together with ZnCdSe a so-called type II system, which means that the electrons and holes are concentrated in different layers and therefore recombine spatially indirectly, i.e. inefficiently and strongly red-shifted.
- This structure is generally not suitable for a laser, for example.
- n-doped top layer n-ZnMgCdSe doped with Cl waveguide layer ZnMgCdSe active layer ZnCdSe undoped
- the lattice constant of the active layer being equal to that of the neighboring layers and that of the substrate.
- the object of the invention is to remedy these disadvantages and to meet the need for a light-emitting semiconductor component which provides light in the spectral range from green to blue and at the same time has a long service life.
- a light-emitting semiconductor component which is composed of a number of layers, which consist predominantly of elements of groups II and VI of the periodic table, and have a p-doped cover layer and an n-doped cover layer, the respective lattice constant of which corresponds to that of the substrate , and contain an undoped active layer lying between the two layers, which forms a quantum well structure in cooperation with its neighboring layers, this object is achieved in that the lattice constant of the active layer is made smaller than that of the neighboring layers.
- the performance increase achieved in semiconductor components according to the present invention is based on the knowledge that the drastic drop in performance in known semiconductor components from elements of groups II and VI of the periodic table has fundamental causes of a thermodynamic nature. To have recognized these connections is a credit present invention.
- the causes are to be briefly explained on the basis of the above-mentioned layer structure of known semiconductor components.
- the p — doping of ZnSe with nitrogen leads to an unstable nitrogen acceptor. It breaks down into a stable complex (N ⁇ -V se ) 3+ , consisting of an interstitial nitrogen atom Ni, and a selenium vacancy V se . This complex is positively charged and diffuses into the quantum well region of the active zone, particularly when the semiconductor component is in operation. There these complexes are captured, accumulated and, at higher concentrations, ultimately lead to the dark line defects.
- the capture process is controlled by the mechanical stress between the active layer and the neighboring layers. Since the ZnCdSe of the active layer has a larger lattice constant than the ZnSe of the neighboring layer, the active layer has a compressive stress in relation to its two neighboring layers.
- the compressive stress in the active zone of known laser diodes which are made up of elements from groups II and VI of the periodic table, favors the trapping of vacancies, since this process leads to a reduction in the lattice constants and thus to a decrease in the energy caused by stress. According to the laws of thermodynamics, this state, which is energetically smaller than that before the capture process, is the more stable state of both.
- the trapping process can therefore be prevented if the active layer and neighboring layers are formed in such a way that a tensile stress prevails between them. In this case, the tension causes vacancies to be pushed back, thereby avoiding the formation of dark line defects.
- the individual layers of the semiconductor component are applied to a substrate made of InP and have a p-doped cover layer, an n-doped cover layer and an undoped active layer in between.
- MBE molecular beam epitaxy
- the p- and n-doped cover layers have different chemical compositions.
- the n-doped layer has Cd, the n-doped layer instead Te.
- the Te in the p-doped layer not only has the role of setting the lattice constants of the active layer and neighboring layers to a defined difference and thus keeping vacancies away from the active layer, but also actively preventing the formation of vacancies.
- Calculations and experiments have shown that in the case of semiconductor components whose p- and n-doped layers contain ZnSe, by introducing, for example, Te into the p-doped layer during the p-doping with nitrogen, the (N ⁇ -V SE ) 3+ - Complex is not stable and therefore does not form. Because of this instability, this complex therefore has no chance of diffusing into the active layer and generating dark line defects.
- Te By introducing Te into the p-doped layer, the formation of the above-mentioned. stable complexes reduced proportionately, the formation of dark line defects during operation of the semiconductor device is further reduced.
- the optimal effect is achieved by the greatest possible concentration of Te in the p-doped layer, i.e. H. when an element of the n-doped layer in the p-doped layer is completely replaced by Te.
- Variants of this form of training are designed so that their p-doped layer contain the element Be and / or Cd.
- the semiconductor component according to the invention can be designed as a spontaneously emitting light-emitting diode or an induced-emitting laser diode.
- the structure described above from p-do- tied layer, active layer and n-doped layer is characteristic of a light emitting diode. If the semiconductor component is designed as a laser diode, additional layers are required, which can be found in the following overview.
- the layer structure has two waveguide layers which enclose the active layer, the energy gap of which is smaller than that of the cover layer and two buffer layers between the substrate and p-doped layer.
- the waveguide layers have the task of being perpendicular to the layer plane for the light generated in the active layer
- the buffer layers have the task of intercepting electrical or crystallographic problems during the transition between the different materials.
- the diode body thereby forms an optical resonator, in which laser light is generated when a current is applied, the strength of which exceeds the threshold current strength.
- the structure and quantitative composition of the active layer have a significant influence on the properties of the emitted light.
- the semiconductor component according to the invention can be designed in such a way that different forms of construction each produce light with properties that are different from one another.
- the frequency or wavelength of the emitted light is of particular interest. It is determined by the energy gap between the valence and conduction band (or between their sub-levels) of the quantum well structure in the active layer.
- the frequency can be specified within certain limits by the mixing ratio of the individual elements of the active layer to one another.
- the lattice constant is determined by the mixing ratio and thereby the frequency of the emitted light is determined.
- the quantitative composition of the individual layers from the elements mentioned is given by the following formulas. Layers with the elements are sufficient
- ZnMgCdSe of the formula: Zn (1 _ x _y) Mg x Cd y Se with 0.4 ⁇ x ⁇ 0.6 and 0.15 ⁇ x ⁇ 0.3,
- ZnMgSeTe of the formula: Zn ( ⁇ _ x - y) Mg x Se ( ⁇ . Y ) Te y with 0.4 ⁇ x ⁇ 0.6 and O, 15 ⁇ y ⁇ 0.3, ZnCdSe of the formula: Zn ⁇ ⁇ - x) Cd x Se with 0 ⁇ x ⁇ 0.5.
- the Zn and Cd content of the active layer can be varied within wide limits and light of different wavelengths can be generated.
- a variant of the present embodiment is designed such that the active layer has a high proportion of Cd and, accordingly, a low proportion of Zn.
- the Light emitted by this variant is in the green spectral range.
- a low proportion of Cd or a high proportion of Zn is specified in the active layer. This variant emits light in the blue spectral range.
- An essential advantage of the semiconductor component according to the invention is that the wavelength of the emitted light can be set to any value between blue and green by specifying appropriate mixing ratios during manufacture.
- the intensity of the radiation generated by the semiconductor component is determined by the current intensity of the current applied.
- the intensity of the radiation increases with increasing current.
- the intentiveness of the radiation emitted by the semiconductor component can also be varied by design specifications. These design specifications concern the number of quantum wells present in the active layer.
- design specifications concern the number of quantum wells present in the active layer.
- a structure with multiple quantum carriers is accordingly formed in the active layer. With this structure, the current of the externally applied current is the same
- buffer layers are provided in addition to the layers forming the actual semiconductor component.
- the task of these layers is to intercept electrical or crystallographic problems in the transition between the different materials.
- a further development of this type has 2 further layers between the substrate and the n-doped cover layer, which layers are formed by n-GalnAs and n-ZnCdSe. Problems in the transition between the different materials can also be dealt with by the fact that the proportion of one or more elements within a layer changes continuously over the layer thickness.
- Such a structure is used for the power supply of an advantageous variant of the semiconductor component according to the present invention.
- the supply of the electrical current in the case of layered semiconductor components takes place i. d. R. across the layers.
- Gold is mainly used as the contact material. If a gold layer is applied directly to a p-doped layer containing ZnSe, a contact with a relatively high resistance results. Contacts with lower resistance and also almost linear, i.e. H. ohmic current / voltage curve is obtained on layers containing ZnTe.
- a further layer is therefore applied to the p-doped layer on the side facing away from the active layer, within which the proportion of Se continuously decreases, while that of Te continuously increases.
- the contact for the power supply is attached to the layer surface with the high percentage of Te.
- FIG. 1 energy level diagram of the semiconductor component according to the invention
- FIG. 1 shows the course of this energy gap in the individual layers of the semiconductor component.
- the individual layers of the semiconductor component are indicated in the drawing. They include one
- p-doped cover layer 1 made of p-ZnMgTeSe with a thickness of 6 waveguide layer 2 made of ZnMgCdSe with a thickness of 7 active layer 3 made of ZnCdSe with a thickness of 8
- Waveguide layer 4 made of ZnMgCdSe with a thickness of 9
- n-doped cover layer 4 made of n-ZnMgCdSe with a thickness of 10
- the valence band edge 11 and conduction band edge 12 are shown within the individual layers.
- the energy gap between these two edges is represented by the distance 13 between the two curves. 14 indicates the energy gap within the active layer. The size of this gap is a measure of the frequency of the light radiation generated in the active layer.
- An essential feature of the present invention is the asymmetrical expression of the course of the two band edges over the individual layers. This asymmetry is evident from the unequal step heights 15 and 16 or 15 'and 16'. The cause of this asymmetry is the asymmetrical, i.e. consisting of different elements, expansion of the p- and n-doped layer.
- the semiconductor devices according to the present invention have a long service life. Measurement curves for this are shown in FIG. 2.
- the first curve 20 shows the course of the intensity of the emitted radiation in a semiconductor component according to the prior art, which is based on GaAs and whose p-doped layer contains the elements ZnMgSSe, as a function of time.
- the second curve 21 shows the corresponding profile for a semiconductor component according to the invention, built on InP with a p-doped layer made of ZnMgTeSe. Boundary conditions for this measurement are: room temperature, continuous wave operation (ie continuously emitting semiconductor element), current density 50A / cm 2 .
- continuous wave operation ie continuously emitting semiconductor element
- current density 50A / cm 2 One knows easily on both measurement curves that the service life of the semiconductor component according to the invention differs by orders of magnitude from that of the semiconductor component according to the prior art.
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Biophysics (AREA)
- Led Devices (AREA)
- Semiconductor Lasers (AREA)
Abstract
L'invention concerne un composant semi-conducteur luminescent comprenant un certain nombre de couches qui sont constituées principalement d'éléments des groupes II et VI de la classification périodique des éléments, qui sont produites par épitaxie sur un substrat, de préférence InP, et qui présentent une couche de recouvrement dopée p et une couche de recouvrement dopée n dont les constantes de grille correspondent à celle du substrat. Les couches comprennent également une couche active non dopée située entre ces deux couches de recouvrement et formant, en coopération avec ses couches voisines, une structure de puits quantique, la constante de grille de la couche active étant inférieure à celle des couches voisines.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10024924A DE10024924A1 (de) | 2000-05-19 | 2000-05-19 | Licht emittierendes Halbleiterbauelement |
DE10024924 | 2000-05-19 | ||
PCT/DE2001/001927 WO2001089046A1 (fr) | 2000-05-19 | 2001-05-21 | Composant semi-conducteur luminescent |
Publications (1)
Publication Number | Publication Date |
---|---|
EP1284038A1 true EP1284038A1 (fr) | 2003-02-19 |
Family
ID=7642863
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP01947152A Withdrawn EP1284038A1 (fr) | 2000-05-19 | 2001-05-21 | Composant semi-conducteur luminescent |
Country Status (5)
Country | Link |
---|---|
US (1) | US7259404B2 (fr) |
EP (1) | EP1284038A1 (fr) |
JP (1) | JP2003533898A (fr) |
DE (1) | DE10024924A1 (fr) |
WO (1) | WO2001089046A1 (fr) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10242360B4 (de) * | 2002-09-12 | 2007-09-27 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip mit Übergitter |
JP4805829B2 (ja) | 2003-09-24 | 2011-11-02 | パテント−トロイハント−ゲゼルシヤフト フユール エレクトリツシエ グリユーラムペン ミツト ベシユレンクテル ハフツング | 定義された色温度を有する白色発光led |
EP2275512B1 (fr) | 2003-09-24 | 2012-07-25 | Osram AG | Diode electroluminescence émettant une lumière verte |
GB0404922D0 (en) * | 2004-03-04 | 2004-04-07 | Dione Plc | Secure card reader |
JP5117114B2 (ja) * | 2007-06-04 | 2013-01-09 | ソニー株式会社 | 半導体素子 |
US20120050632A1 (en) * | 2010-08-31 | 2012-03-01 | Chi Lin Technology Co., Ltd. | Display apparatus having quantum dot layer |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1994015369A1 (fr) * | 1992-12-22 | 1994-07-07 | Research Corporation Technologies, Inc. | Dispositifs semi-conducteurs electroluminescents composes des groupes ii a vi et contact ohmique a cet effet |
KR970005168B1 (ko) * | 1993-01-26 | 1997-04-12 | 엘지전자 주식회사 | 청색 반도체 레이저 다이오드 |
US5422902A (en) * | 1993-07-02 | 1995-06-06 | Philips Electronics North America Corporation | BeTe-ZnSe graded band gap ohmic contact to p-type ZnSe semiconductors |
JP3586293B2 (ja) * | 1994-07-11 | 2004-11-10 | ソニー株式会社 | 半導体発光素子 |
JP3461611B2 (ja) * | 1995-03-24 | 2003-10-27 | 正紀 村上 | Ii−vi族化合物半導体装置及びその製造方法 |
JP2930032B2 (ja) * | 1996-09-26 | 1999-08-03 | 日本電気株式会社 | Ii−vi族化合物半導体発光素子およびその製造方法 |
US6031244A (en) * | 1996-12-09 | 2000-02-29 | Sony Corporation | Luminescent semiconductor device with antidiffusion layer on active layer surface |
-
2000
- 2000-05-19 DE DE10024924A patent/DE10024924A1/de not_active Withdrawn
-
2001
- 2001-05-21 EP EP01947152A patent/EP1284038A1/fr not_active Withdrawn
- 2001-05-21 WO PCT/DE2001/001927 patent/WO2001089046A1/fr active Application Filing
- 2001-05-21 JP JP2001585365A patent/JP2003533898A/ja not_active Withdrawn
-
2002
- 2002-11-19 US US10/299,747 patent/US7259404B2/en not_active Expired - Fee Related
Non-Patent Citations (1)
Title |
---|
See references of WO0189046A1 * |
Also Published As
Publication number | Publication date |
---|---|
WO2001089046A1 (fr) | 2001-11-22 |
US20040012010A1 (en) | 2004-01-22 |
JP2003533898A (ja) | 2003-11-11 |
US7259404B2 (en) | 2007-08-21 |
DE10024924A1 (de) | 2001-11-29 |
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