DE69005179T2 - Anordnungen mit einer asymmetrischen Delta-Dotierung. - Google Patents

Anordnungen mit einer asymmetrischen Delta-Dotierung.

Info

Publication number
DE69005179T2
DE69005179T2 DE90303937T DE69005179T DE69005179T2 DE 69005179 T2 DE69005179 T2 DE 69005179T2 DE 90303937 T DE90303937 T DE 90303937T DE 69005179 T DE69005179 T DE 69005179T DE 69005179 T2 DE69005179 T2 DE 69005179T2
Authority
DE
Germany
Prior art keywords
arrangements
delta doping
asymmetric
asymmetric delta
doping
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE90303937T
Other languages
English (en)
Other versions
DE69005179D1 (de
Inventor
John Edward Cunningham
Alastair Malcolm Glass
Erdmann Frederick Schubert
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
American Telephone and Telegraph Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by American Telephone and Telegraph Co Inc filed Critical American Telephone and Telegraph Co Inc
Publication of DE69005179D1 publication Critical patent/DE69005179D1/de
Application granted granted Critical
Publication of DE69005179T2 publication Critical patent/DE69005179T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/15—Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
    • H01L29/157—Doping structures, e.g. doping superlattices, nipi superlattices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035236—Superlattices; Multiple quantum well structures
    • H01L31/035263—Doping superlattices, e.g. nipi superlattices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3408—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers characterised by specially shaped wells, e.g. triangular

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Nanotechnology (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Light Receiving Elements (AREA)
  • Led Devices (AREA)
  • Recrystallisation Techniques (AREA)
  • Semiconductor Lasers (AREA)
DE90303937T 1989-04-21 1990-04-11 Anordnungen mit einer asymmetrischen Delta-Dotierung. Expired - Fee Related DE69005179T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/341,501 US4974044A (en) 1989-04-21 1989-04-21 Devices having asymmetric delta-doping
SG26394 1994-02-21

Publications (2)

Publication Number Publication Date
DE69005179D1 DE69005179D1 (de) 1994-01-27
DE69005179T2 true DE69005179T2 (de) 1994-03-31

Family

ID=26663903

Family Applications (1)

Application Number Title Priority Date Filing Date
DE90303937T Expired - Fee Related DE69005179T2 (de) 1989-04-21 1990-04-11 Anordnungen mit einer asymmetrischen Delta-Dotierung.

Country Status (5)

Country Link
US (1) US4974044A (de)
EP (1) EP0393924B1 (de)
JP (1) JPH0728050B2 (de)
DE (1) DE69005179T2 (de)
HK (1) HK108394A (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5164809A (en) * 1989-04-21 1992-11-17 The Regents Of The University Of Calif. Amorphous silicon radiation detectors
US5206526A (en) * 1991-05-13 1993-04-27 At&T Bell Laboratories Staircase bandgap photodetector using recombination
JPH0766984B2 (ja) * 1992-02-13 1995-07-19 インターナショナル・ビジネス・マシーンズ・コーポレイション ヘテロ超格子ｐｎ接合
KR960004594B1 (ko) * 1993-03-17 1996-04-09 엘지전자주식회사 적외선 광 검출기
DE19620761A1 (de) * 1996-05-23 1997-11-27 Daimler Benz Ag Optoelektrisches Bauelement mit einer modulationsdotierten Schichtstruktur
KR100288851B1 (ko) * 1999-03-25 2001-04-16 조장연 델타도핑을 이용한 질화물계 발광소자의 제작방법
FR2868171B1 (fr) * 2004-03-29 2006-09-15 Univ Paris Sud Modulateur optoelectronique haute frequence integre sur silicium
US7483212B2 (en) * 2006-10-11 2009-01-27 Rensselaer Polytechnic Institute Optical thin film, semiconductor light emitting device having the same and methods of fabricating the same
US9691941B2 (en) 2013-12-12 2017-06-27 Terahertz Device Corporation Barriers, injectors, tunnel-junctions, and cascaded LED junctions
CN110808535A (zh) * 2019-11-21 2020-02-18 江苏索尔思通信科技有限公司 一种高可靠性的应变量子阱激光器的外延片生长方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3626328A (en) * 1969-04-01 1971-12-07 Ibm Semiconductor bulk oscillator
US4410902A (en) * 1981-03-23 1983-10-18 The United States Of America As Represented By The Secretary Of The Army Planar doped barrier semiconductor device
JPS59105377A (ja) * 1982-11-24 1984-06-18 ウエスタ−ン・エレクトリツク・カムパニ−，インコ−ポレ−テツド 半導体デバイス
US4694318A (en) * 1984-12-05 1987-09-15 American Telephone And Telegraph Company, At&T Bell Laboratories Sawtooth photodetector
JPH0632339B2 (ja) * 1984-12-18 1994-04-27 キヤノン株式会社 半導体レ−ザ
US4665412A (en) * 1985-06-19 1987-05-12 Ga Technologies Inc. Coupled heterostructure superlattice devices
JPH0726179B2 (ja) * 1985-09-11 1995-03-22 住友金属工業株式会社 結晶材料切断用内周刃
JPH0697702B2 (ja) * 1985-10-07 1994-11-30 日本電信電話株式会社 トンネルバリア制御型受光素子
US4772335A (en) * 1987-10-15 1988-09-20 Stemcor Corporation Photovoltaic device responsive to ultraviolet radiation

Also Published As

Publication number Publication date
US4974044A (en) 1990-11-27
JPH02301167A (ja) 1990-12-13
EP0393924A3 (de) 1991-03-13
EP0393924B1 (de) 1993-12-15
JPH0728050B2 (ja) 1995-03-29
DE69005179D1 (de) 1994-01-27
EP0393924A2 (de) 1990-10-24
HK108394A (en) 1994-10-14

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Free format text: BLUMBACH, KRAMER & PARTNER, 65193 WIESBADEN

8339 Ceased/non-payment of the annual fee