CH428675A - Verfahren zur Gewinnung von reinstem Halbleitermaterial, insbesondere Silizium - Google Patents
Verfahren zur Gewinnung von reinstem Halbleitermaterial, insbesondere SiliziumInfo
- Publication number
- CH428675A CH428675A CH46861A CH46861A CH428675A CH 428675 A CH428675 A CH 428675A CH 46861 A CH46861 A CH 46861A CH 46861 A CH46861 A CH 46861A CH 428675 A CH428675 A CH 428675A
- Authority
- CH
- Switzerland
- Prior art keywords
- purest
- production
- semiconductor material
- particular silicon
- silicon
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/90—Carbides
- C01B32/914—Carbides of single elements
- C01B32/956—Silicon carbide
- C01B32/963—Preparation from compounds containing silicon
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
- C22B41/00—Obtaining germanium
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/08—Reaction chambers; Selection of materials therefor
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/911—Seed or rod holders
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES0067374 | 1960-03-02 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CH428675A true CH428675A (de) | 1967-01-31 |
Family
ID=7499500
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CH46861A CH428675A (de) | 1960-03-02 | 1961-01-16 | Verfahren zur Gewinnung von reinstem Halbleitermaterial, insbesondere Silizium |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US3042493A (de) |
| CH (1) | CH428675A (de) |
| GB (1) | GB929074A (de) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3244141A (en) * | 1958-07-09 | 1966-04-05 | Chrysler Corp | Apparatus for obtaining metal carbide coating on base materials |
| DE1138481C2 (de) * | 1961-06-09 | 1963-05-22 | Siemens Ag | Verfahren zur Herstellung von Halbleiteranordnungen durch einkristalline Abscheidung von Halbleitermaterial aus der Gasphase |
| US3220380A (en) * | 1961-08-21 | 1965-11-30 | Merck & Co Inc | Deposition chamber including heater element enveloped by a quartz workholder |
| US3459152A (en) * | 1964-08-28 | 1969-08-05 | Westinghouse Electric Corp | Apparatus for epitaxially producing a layer on a substrate |
| DE2843676A1 (de) * | 1978-10-06 | 1980-04-24 | Philips Patentverwaltung | Verfahren und vorrichtung zur festkoerperpyrolyse von organischen polymeren stoffen |
| US4444812A (en) * | 1980-07-28 | 1984-04-24 | Monsanto Company | Combination gas curtains for continuous chemical vapor deposition production of silicon bodies |
-
1961
- 1961-01-16 CH CH46861A patent/CH428675A/de unknown
- 1961-03-01 US US92562A patent/US3042493A/en not_active Expired - Lifetime
- 1961-03-01 GB GB7526/61A patent/GB929074A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| GB929074A (en) | 1963-06-19 |
| US3042493A (en) | 1962-07-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CH437243A (de) | Verfahren zur Herstellung von Äthylenoxyd | |
| CH425738A (de) | Verfahren zur Gewinnung von kristallinem Halbleitermaterial | |
| CH392699A (de) | Verfahren zur Herstellung von Halbleiter-Gleichrichteranordnungen mit tablettenförmigen Gleichrichterelementen | |
| CH442255A (de) | Verfahren zur Herstellung von Siliciumcarbid | |
| CH429673A (de) | Verfahren zur Abscheidung von Halbleitermaterial | |
| CH357121A (de) | Verfahren zur Herstellung von Halbleiteranordnungen | |
| CH402191A (de) | Verfahren zur Umwandlung von n- in p-leitendes Halbleitermaterial | |
| CH444352A (de) | Verfahren zur Herstellung von Klebstoffen | |
| CH381419A (de) | Verfahren zur Herstellung von Formstücken aus Zellmaterial | |
| AT260508B (de) | Verfahren zur Nachbehandlung von formgepreßten Gegenständen | |
| CH371791A (de) | Verfahren zur Herstellung von reinstem Silizium | |
| CH428675A (de) | Verfahren zur Gewinnung von reinstem Halbleitermaterial, insbesondere Silizium | |
| CH428676A (de) | Verfahren zur Gewinnung von reinstem Halbleitermaterial für elektronische Zwecke | |
| CH401633A (de) | Verfahren zum Ätzen von im wesentlichen einkristallinen Halbleiterkörpern | |
| CH414570A (de) | Verfahren zur Gewinnung von reinstem Halbleitermaterial, insbesondere Silizium | |
| CH390270A (de) | Verfahren zur Herstellung von Nitrilen | |
| CH404966A (de) | Verfahren zur Herstellung von Einkristallen, insbesondere aus Halbleitermaterial | |
| CH401357A (de) | Verfahren zur Herstellung von Rufomycin | |
| CH426743A (de) | Verfahren zur Gewinnung von reinstem Halbleitermaterial, insbesondere Silizium | |
| CH401634A (de) | Verfahren zum formgebenden Bearbeiten von Halbleiterkristallen | |
| CH382296A (de) | Verfahren zur Herstellung von einkristallinem Halbleitermaterial | |
| CH410251A (de) | Verfahren zur Herstellung von Waschmitteln | |
| CH417557A (de) | Verfahren zur Herstellung von Äthylenoxyd | |
| CH437556A (de) | Verfahren zur Herstellung von ferromagnetischem Material | |
| CH397878A (de) | Verfahren zur Herstellung von Halbleiteranordnungen |