CH429673A - Verfahren zur Abscheidung von Halbleitermaterial - Google Patents
Verfahren zur Abscheidung von HalbleitermaterialInfo
- Publication number
- CH429673A CH429673A CH200461A CH200461A CH429673A CH 429673 A CH429673 A CH 429673A CH 200461 A CH200461 A CH 200461A CH 200461 A CH200461 A CH 200461A CH 429673 A CH429673 A CH 429673A
- Authority
- CH
- Switzerland
- Prior art keywords
- deposition
- semiconductor material
- semiconductor
- Prior art date
Links
- 230000008021 deposition Effects 0.000 title 1
- 239000000463 material Substances 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
- C22B41/00—Obtaining germanium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Manufacturing & Machinery (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Silicon Compounds (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DES68807A DE1123300B (de) | 1960-06-03 | 1960-06-03 | Verfahren zur Herstellung von Silicium oder Germanium |
Publications (1)
Publication Number | Publication Date |
---|---|
CH429673A true CH429673A (de) | 1967-02-15 |
Family
ID=7500543
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH200461A CH429673A (de) | 1960-06-03 | 1961-02-20 | Verfahren zur Abscheidung von Halbleitermaterial |
Country Status (5)
Country | Link |
---|---|
US (1) | US3120451A (de) |
BE (1) | BE604422A (de) |
CH (1) | CH429673A (de) |
DE (1) | DE1123300B (de) |
GB (1) | GB928899A (de) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3328199A (en) * | 1960-01-15 | 1967-06-27 | Siemens Ag | Method of producing monocrystalline silicon of high purity |
NL125293C (de) * | 1961-05-16 | 1900-01-01 | ||
US3391016A (en) * | 1964-02-07 | 1968-07-02 | Texas Instruments Inc | Silicon carbide coating on graphite bores of heat exchanger |
US3527661A (en) * | 1966-09-01 | 1970-09-08 | Siemens Ag | Method of obtaining purest semiconductor material by elimination of carbon-impurities |
US4040849A (en) * | 1976-01-06 | 1977-08-09 | General Electric Company | Polycrystalline silicon articles by sintering |
US4040848A (en) * | 1976-01-06 | 1977-08-09 | General Electric Company | Polycrystalline silicon articles containing boron by sintering |
DE2609564A1 (de) * | 1976-03-08 | 1977-09-15 | Siemens Ag | Verfahren zum abscheiden von elementarem silicium aus der gasphase |
US4148931A (en) * | 1976-03-08 | 1979-04-10 | Siemens Aktiengesellschaft | Process for depositing elemental silicon semiconductor material from a gas phase |
US4054641A (en) * | 1976-05-07 | 1977-10-18 | John S. Pennish | Method for making vitreous silica |
DE2831819A1 (de) * | 1978-07-19 | 1980-01-31 | Siemens Ag | Verfahren zum abscheiden von silicium in feinkristalliner form |
DE2831816A1 (de) * | 1978-07-19 | 1980-01-31 | Siemens Ag | Verfahren zum abscheiden von silicium in feinkristalliner form |
JPS5656649U (de) * | 1980-06-13 | 1981-05-16 | ||
WO2007120871A2 (en) * | 2006-04-13 | 2007-10-25 | Cabot Corporation | Production of silicon through a closed-loop process |
US9683286B2 (en) | 2006-04-28 | 2017-06-20 | Gtat Corporation | Increased polysilicon deposition in a CVD reactor |
US8961689B2 (en) * | 2008-03-26 | 2015-02-24 | Gtat Corporation | Systems and methods for distributing gas in a chemical vapor deposition reactor |
US9156705B2 (en) | 2010-12-23 | 2015-10-13 | Sunedison, Inc. | Production of polycrystalline silicon by the thermal decomposition of dichlorosilane in a fluidized bed reactor |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB829421A (en) * | 1956-10-16 | 1960-03-02 | Standard Telephones Cables Ltd | Improvements in or relating to methods of producing silicon of high purity |
NL122356C (de) * | 1954-05-18 | 1900-01-01 | ||
DE1155759B (de) * | 1959-06-11 | 1963-10-17 | Siemens Ag | Vorrichtung zur Gewinnung reinsten kristallinen Halbleitermaterials fuer elektrotechnische Zwecke |
-
1960
- 1960-06-03 DE DES68807A patent/DE1123300B/de active Pending
-
1961
- 1961-02-20 CH CH200461A patent/CH429673A/de unknown
- 1961-05-24 US US112434A patent/US3120451A/en not_active Expired - Lifetime
- 1961-05-31 BE BE604422A patent/BE604422A/fr unknown
- 1961-06-05 GB GB20300/61A patent/GB928899A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
BE604422A (fr) | 1961-11-30 |
US3120451A (en) | 1964-02-04 |
DE1123300B (de) | 1962-02-08 |
GB928899A (en) | 1963-06-19 |
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