CH429673A - Verfahren zur Abscheidung von Halbleitermaterial - Google Patents

Verfahren zur Abscheidung von Halbleitermaterial

Info

Publication number
CH429673A
CH429673A CH200461A CH200461A CH429673A CH 429673 A CH429673 A CH 429673A CH 200461 A CH200461 A CH 200461A CH 200461 A CH200461 A CH 200461A CH 429673 A CH429673 A CH 429673A
Authority
CH
Switzerland
Prior art keywords
deposition
semiconductor material
semiconductor
Prior art date
Application number
CH200461A
Other languages
English (en)
Inventor
Schmidt Otto
Erhard Dr Sirtl
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH429673A publication Critical patent/CH429673A/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
    • C22B41/00—Obtaining germanium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Silicon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
CH200461A 1960-06-03 1961-02-20 Verfahren zur Abscheidung von Halbleitermaterial CH429673A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES68807A DE1123300B (de) 1960-06-03 1960-06-03 Verfahren zur Herstellung von Silicium oder Germanium

Publications (1)

Publication Number Publication Date
CH429673A true CH429673A (de) 1967-02-15

Family

ID=7500543

Family Applications (1)

Application Number Title Priority Date Filing Date
CH200461A CH429673A (de) 1960-06-03 1961-02-20 Verfahren zur Abscheidung von Halbleitermaterial

Country Status (5)

Country Link
US (1) US3120451A (de)
BE (1) BE604422A (de)
CH (1) CH429673A (de)
DE (1) DE1123300B (de)
GB (1) GB928899A (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3328199A (en) * 1960-01-15 1967-06-27 Siemens Ag Method of producing monocrystalline silicon of high purity
NL275029A (de) * 1961-05-16 1900-01-01
US3391016A (en) * 1964-02-07 1968-07-02 Texas Instruments Inc Silicon carbide coating on graphite bores of heat exchanger
US3527661A (en) * 1966-09-01 1970-09-08 Siemens Ag Method of obtaining purest semiconductor material by elimination of carbon-impurities
US4040848A (en) * 1976-01-06 1977-08-09 General Electric Company Polycrystalline silicon articles containing boron by sintering
US4040849A (en) * 1976-01-06 1977-08-09 General Electric Company Polycrystalline silicon articles by sintering
US4148931A (en) * 1976-03-08 1979-04-10 Siemens Aktiengesellschaft Process for depositing elemental silicon semiconductor material from a gas phase
DE2609564A1 (de) * 1976-03-08 1977-09-15 Siemens Ag Verfahren zum abscheiden von elementarem silicium aus der gasphase
US4054641A (en) * 1976-05-07 1977-10-18 John S. Pennish Method for making vitreous silica
DE2831819A1 (de) * 1978-07-19 1980-01-31 Siemens Ag Verfahren zum abscheiden von silicium in feinkristalliner form
DE2831816A1 (de) * 1978-07-19 1980-01-31 Siemens Ag Verfahren zum abscheiden von silicium in feinkristalliner form
JPS5656649U (de) * 1980-06-13 1981-05-16
EP2021279A2 (de) * 2006-04-13 2009-02-11 Cabot Corporation Verfahren zur herstellung von silicium durch ein verfahren mit geschlossenem kreislauf
US9683286B2 (en) 2006-04-28 2017-06-20 Gtat Corporation Increased polysilicon deposition in a CVD reactor
US8961689B2 (en) * 2008-03-26 2015-02-24 Gtat Corporation Systems and methods for distributing gas in a chemical vapor deposition reactor
US9156705B2 (en) 2010-12-23 2015-10-13 Sunedison, Inc. Production of polycrystalline silicon by the thermal decomposition of dichlorosilane in a fluidized bed reactor

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB829421A (en) * 1956-10-16 1960-03-02 Standard Telephones Cables Ltd Improvements in or relating to methods of producing silicon of high purity
NL246576A (de) * 1954-05-18 1900-01-01
DE1155759B (de) * 1959-06-11 1963-10-17 Siemens Ag Vorrichtung zur Gewinnung reinsten kristallinen Halbleitermaterials fuer elektrotechnische Zwecke

Also Published As

Publication number Publication date
DE1123300B (de) 1962-02-08
US3120451A (en) 1964-02-04
BE604422A (fr) 1961-11-30
GB928899A (en) 1963-06-19

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