AT269243B - Verfahren zur Herstellung von insbesondere als Thermogenerator verwendbaren homogenen Körpern aus Germanium-Silicium - Google Patents

Verfahren zur Herstellung von insbesondere als Thermogenerator verwendbaren homogenen Körpern aus Germanium-Silicium

Info

Publication number
AT269243B
AT269243B AT1022465A AT1022465A AT269243B AT 269243 B AT269243 B AT 269243B AT 1022465 A AT1022465 A AT 1022465A AT 1022465 A AT1022465 A AT 1022465A AT 269243 B AT269243 B AT 269243B
Authority
AT
Austria
Prior art keywords
germanium
silicon
production
bodies made
thermal generator
Prior art date
Application number
AT1022465A
Other languages
English (en)
Original Assignee
Consortium Elektrochem Ind
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Consortium Elektrochem Ind filed Critical Consortium Elektrochem Ind
Application granted granted Critical
Publication of AT269243B publication Critical patent/AT269243B/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
    • C22B4/00—Electrothermal treatment of ores or metallurgical products for obtaining metals or alloys
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/02—Making non-ferrous alloys by melting
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C28/00—Alloys based on a metal not provided for in groups C22C5/00 - C22C27/00
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
    • C30B11/10—Solid or liquid components, e.g. Verneuil method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/52—Alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/8556—Thermoelectric active materials comprising inorganic compositions comprising compounds containing germanium or silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/906—Special atmosphere other than vacuum or inert

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Geology (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
AT1022465A 1964-11-12 1965-11-12 Verfahren zur Herstellung von insbesondere als Thermogenerator verwendbaren homogenen Körpern aus Germanium-Silicium AT269243B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DEC34347A DE1230227B (de) 1964-11-12 1964-11-12 Verfahren zur Herstellung von homogenen Koerpern aus Germanium-Silicium-Legierungen

Publications (1)

Publication Number Publication Date
AT269243B true AT269243B (de) 1969-03-10

Family

ID=7021271

Family Applications (1)

Application Number Title Priority Date Filing Date
AT1022465A AT269243B (de) 1964-11-12 1965-11-12 Verfahren zur Herstellung von insbesondere als Thermogenerator verwendbaren homogenen Körpern aus Germanium-Silicium

Country Status (9)

Country Link
US (1) US3367394A (de)
AT (1) AT269243B (de)
BE (1) BE672237A (de)
CH (1) CH459963A (de)
DE (1) DE1230227B (de)
FR (1) FR1454189A (de)
GB (1) GB1132006A (de)
NL (1) NL6514666A (de)
SE (1) SE326159B (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3476172A (en) * 1966-02-08 1969-11-04 Impact Casting Co Inc Methods of die casting materials of relatively high melting temperatures
US3634647A (en) * 1967-07-14 1972-01-11 Ernest Brock Dale Jr Evaporation of multicomponent alloys
FR2015780A1 (de) * 1968-08-16 1970-04-30 Consortium Elektrochem Ind
US3678986A (en) * 1970-04-27 1972-07-25 Siemens Ag Method for manufacturing homogeneous bodies from semiconductor alloys
US3643680A (en) * 1970-09-14 1972-02-22 Kelsey Hayes Co Bottom pour stopper
FR2315168A1 (fr) * 1975-06-20 1977-01-14 Radiotechnique Compelec Procede de fabrication de corps lamellaires polycristallins notamment semi-conducteurs
DE3035707A1 (de) * 1980-09-22 1982-04-08 Deutsche Forschungs- und Versuchsanstalt für Luft- und Raumfahrt e.V., 5000 Köln Oel- und gasbrenner zum einbau in heizungs- und dampferzeugungskessel
US4442449A (en) * 1981-03-16 1984-04-10 Fairchild Camera And Instrument Corp. Binary germanium-silicon interconnect and electrode structure for integrated circuits
US4354987A (en) * 1981-03-31 1982-10-19 Union Carbide Corporation Consolidation of high purity silicon powder
US4690875A (en) * 1984-01-12 1987-09-01 Degussa Electronics Inc., Materials Division High vacuum cast ingots
US4558729A (en) * 1984-01-12 1985-12-17 Demetron, Inc. Method for high vacuum casting
EP0700454B1 (de) * 1993-05-25 1998-07-22 Siemens Medical Systems, Inc. Verfahren zur herstellung grossflächiger kristalliner salzkörper und dazu geeignete vorrichtung
CN104162654B (zh) * 2014-06-30 2019-04-02 富士和机械工业（湖北）有限公司 一种浇注机自动浇注系统
CN115323179B (zh) * 2022-08-22 2023-11-24 昆明理工大学 一种利用超声抑制高酸含锗浸出液降酸时形成铁硅锗胶体沉淀的方法

Also Published As

Publication number Publication date
US3367394A (en) 1968-02-06
CH459963A (de) 1968-07-31
FR1454189A (fr) 1966-07-22
BE672237A (de) 1966-05-12
NL6514666A (de) 1966-05-13
GB1132006A (en) 1968-10-30
SE326159B (de) 1970-07-20
DE1230227B (de) 1966-12-08

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