CA1078516A - Bulk charge coupled devices with read out gates - Google Patents
Bulk charge coupled devices with read out gatesInfo
- Publication number
- CA1078516A CA1078516A CA255,478A CA255478A CA1078516A CA 1078516 A CA1078516 A CA 1078516A CA 255478 A CA255478 A CA 255478A CA 1078516 A CA1078516 A CA 1078516A
- Authority
- CA
- Canada
- Prior art keywords
- charge
- layer
- region
- electrodes
- conductivity type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 110
- 238000003860 storage Methods 0.000 claims abstract description 74
- 239000002800 charge carrier Substances 0.000 claims abstract description 42
- 230000005669 field effect Effects 0.000 claims abstract description 30
- 238000012546 transfer Methods 0.000 claims description 96
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 23
- 230000005855 radiation Effects 0.000 claims description 13
- 238000012216 screening Methods 0.000 claims description 12
- 230000000694 effects Effects 0.000 claims description 11
- 230000005684 electric field Effects 0.000 claims description 11
- 238000009826 distribution Methods 0.000 claims description 10
- 230000001419 dependent effect Effects 0.000 claims description 8
- 230000015556 catabolic process Effects 0.000 claims description 4
- 239000000969 carrier Substances 0.000 claims description 3
- 230000002401 inhibitory effect Effects 0.000 claims description 2
- 230000001066 destructive effect Effects 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 303
- 150000002500 ions Chemical class 0.000 description 33
- 239000000758 substrate Substances 0.000 description 30
- 239000004020 conductor Substances 0.000 description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 18
- 229910052710 silicon Inorganic materials 0.000 description 18
- 239000010703 silicon Substances 0.000 description 18
- 229920005591 polysilicon Polymers 0.000 description 17
- 239000004411 aluminium Substances 0.000 description 14
- 229910052782 aluminium Inorganic materials 0.000 description 14
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 14
- 238000003384 imaging method Methods 0.000 description 14
- 230000000875 corresponding effect Effects 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 230000035945 sensitivity Effects 0.000 description 8
- 238000012545 processing Methods 0.000 description 7
- 230000009467 reduction Effects 0.000 description 7
- 241001663154 Electron Species 0.000 description 6
- 230000003321 amplification Effects 0.000 description 6
- 238000001514 detection method Methods 0.000 description 6
- 230000004048 modification Effects 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- 238000003199 nucleic acid amplification method Methods 0.000 description 6
- 230000009471 action Effects 0.000 description 5
- 230000008901 benefit Effects 0.000 description 5
- 239000011810 insulating material Substances 0.000 description 5
- 239000004973 liquid crystal related substance Substances 0.000 description 5
- 230000002441 reversible effect Effects 0.000 description 5
- 230000006872 improvement Effects 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 229910002056 binary alloy Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229920000136 polysorbate Polymers 0.000 description 2
- 230000003334 potential effect Effects 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 108091032973 (ribonucleotides)n+m Proteins 0.000 description 1
- ODPOAESBSUKMHD-UHFFFAOYSA-L 6,7-dihydrodipyrido[1,2-b:1',2'-e]pyrazine-5,8-diium;dibromide Chemical compound [Br-].[Br-].C1=CC=[N+]2CC[N+]3=CC=CC=C3C2=C1 ODPOAESBSUKMHD-UHFFFAOYSA-L 0.000 description 1
- TVEXGJYMHHTVKP-UHFFFAOYSA-N 6-oxabicyclo[3.2.1]oct-3-en-7-one Chemical compound C1C2C(=O)OC1C=CC2 TVEXGJYMHHTVKP-UHFFFAOYSA-N 0.000 description 1
- 241000370685 Arge Species 0.000 description 1
- 101100379067 Caenorhabditis elegans anc-1 gene Proteins 0.000 description 1
- 239000005630 Diquat Substances 0.000 description 1
- 101100018928 Drosophila melanogaster InR gene Proteins 0.000 description 1
- 101150030061 Eloc gene Proteins 0.000 description 1
- 101150087426 Gnal gene Proteins 0.000 description 1
- 241000567769 Isurus oxyrinchus Species 0.000 description 1
- 101100384355 Mus musculus Ctnnbip1 gene Proteins 0.000 description 1
- ZJMZZNVGNSWOOM-UHFFFAOYSA-N N-(butan-2-yl)-N'-ethyl-6-methoxy-1,3,5-triazine-2,4-diamine Chemical compound CCNC1=NC(NC(C)CC)=NC(OC)=N1 ZJMZZNVGNSWOOM-UHFFFAOYSA-N 0.000 description 1
- 108091030071 RNAI Proteins 0.000 description 1
- 241000428533 Rhis Species 0.000 description 1
- 238000001015 X-ray lithography Methods 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 229940037003 alum Drugs 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical compound [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 238000010351 charge transfer process Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 210000003414 extremity Anatomy 0.000 description 1
- 101150110946 gatC gene Proteins 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- VKYKSIONXSXAKP-UHFFFAOYSA-N hexamethylenetetramine Chemical compound C1N(C2)CN3CN1CN2C3 VKYKSIONXSXAKP-UHFFFAOYSA-N 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 238000012015 optical character recognition Methods 0.000 description 1
- 230000003389 potentiating effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 108090000623 proteins and genes Proteins 0.000 description 1
- QHGVXILFMXYDRS-UHFFFAOYSA-N pyraclofos Chemical compound C1=C(OP(=O)(OCC)SCCC)C=NN1C1=CC=C(Cl)C=C1 QHGVXILFMXYDRS-UHFFFAOYSA-N 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D44/00—Charge transfer devices
- H10D44/40—Charge-coupled devices [CCD]
- H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes
- H10D44/454—Output structures
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
- G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/15—Charge-coupled device [CCD] image sensors
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Non-Volatile Memory (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB27093/75A GB1548877A (en) | 1975-06-26 | 1975-06-26 | Semiconductor devices |
| GB4889475 | 1975-11-27 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1078516A true CA1078516A (en) | 1980-05-27 |
Family
ID=26258625
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA255,478A Expired CA1078516A (en) | 1975-06-26 | 1976-06-23 | Bulk charge coupled devices with read out gates |
Country Status (12)
Families Citing this family (35)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5462462U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1977-10-11 | 1979-05-01 | ||
| US4166223A (en) * | 1978-02-06 | 1979-08-28 | Westinghouse Electric Corp. | Dual field effect transistor structure for compensating effects of threshold voltage |
| US4223329A (en) * | 1978-06-30 | 1980-09-16 | International Business Machines Corporation | Bipolar dual-channel charge-coupled device |
| US4559638A (en) * | 1978-10-23 | 1985-12-17 | Westinghouse Electric Corp. | Charge transfer device having an improved read-out portion |
| US4672645A (en) * | 1978-10-23 | 1987-06-09 | Westinghouse Electric Corp. | Charge transfer device having an improved read-out portion |
| US4227201A (en) * | 1979-01-22 | 1980-10-07 | Hughes Aircraft Company | CCD Readout structure for display applications |
| CA1164562A (en) * | 1980-10-08 | 1984-03-27 | Manabu Itsumi | Semiconductor memory device |
| US4693561A (en) * | 1985-12-23 | 1987-09-15 | The United States Of America As Represented By The Secretary Of The Army | Amorphous silicon spatial light modulator |
| JPH04133336A (ja) * | 1990-09-25 | 1992-05-07 | Mitsubishi Electric Corp | 電荷転送装置 |
| JPH04148536A (ja) * | 1990-10-12 | 1992-05-21 | Sony Corp | 転送電荷増幅装置 |
| JP3036175B2 (ja) * | 1991-11-11 | 2000-04-24 | 日本電気株式会社 | 電荷転送装置 |
| JP2780564B2 (ja) * | 1992-05-20 | 1998-07-30 | 日本電気株式会社 | 電荷転送装置 |
| US5331165A (en) * | 1992-12-01 | 1994-07-19 | Ball Corporation | Split event reduced x-ray imager |
| US5436476A (en) * | 1993-04-14 | 1995-07-25 | Texas Instruments Incorporated | CCD image sensor with active transistor pixel |
| JP2696057B2 (ja) * | 1993-05-11 | 1998-01-14 | ニチモウ株式会社 | 穀類を原料とした生成物の製造方法 |
| US5369047A (en) * | 1993-07-01 | 1994-11-29 | Texas Instruments Incorporated | Method of making a BCD low noise high sensitivity charge detection amplifier for high performance image sensors |
| US5357128A (en) * | 1993-08-27 | 1994-10-18 | Goldstar Electron Co., Ltd. | Charge detecting device |
| JP3031815B2 (ja) * | 1994-04-01 | 2000-04-10 | シャープ株式会社 | 電荷検出素子及びその製造方法並びに電荷転送検出装置 |
| EP0719456B1 (en) * | 1994-06-23 | 1999-09-29 | Koninklijke Philips Electronics N.V. | Charge coupled device, and imaging device comprising such a charge coupled device |
| JP2816824B2 (ja) * | 1995-09-11 | 1998-10-27 | エルジイ・セミコン・カンパニイ・リミテッド | Ｃｃｄ固体撮像素子 |
| WO1997012402A1 (en) * | 1995-09-29 | 1997-04-03 | Analog Devices, Inc. | Semiconductor charge potential wells with integrated diffusions |
| US5838034A (en) * | 1996-12-10 | 1998-11-17 | National Science Council | Infrared optical bulk channel field effect transistor for greater effectiveness |
| DE19941148B4 (de) * | 1999-08-30 | 2006-08-10 | Infineon Technologies Ag | Speicher mit Grabenkondensator und Auswahltransistor und Verfahren zu seiner Herstellung |
| DE60331060D1 (de) * | 2003-09-02 | 2010-03-11 | Univ Bruxelles | Ein durch einen Strom aus Majoritätsträgern unterstützter Detektor für elektromagnetische Strahlung |
| US8906563B2 (en) | 2011-11-04 | 2014-12-09 | Fluidic, Inc. | Internal convection cell |
| DE102012206089B4 (de) | 2012-03-15 | 2017-02-02 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Halbleiterstruktur, verfahren zum betreiben derselben und herstellungsverfahren |
| JP6544667B2 (ja) * | 2015-10-02 | 2019-07-17 | 国立研究開発法人産業技術総合研究所 | マルチプレクサ及びこれを用いた集積回路 |
| BR112019000713B1 (pt) | 2016-07-22 | 2023-04-25 | Nantenergy, Inc | Célula eletroquímica e método de conservar umidade dentro de uma célula eletroquímica |
| AU2017298995B2 (en) | 2016-07-22 | 2019-08-29 | Form Energy, Inc. | Mist elimination system for electrochemical cells |
| MA53027A (fr) | 2018-06-29 | 2021-05-05 | Form Energy Inc | Joint à membrane roulante |
| WO2020006419A1 (en) | 2018-06-29 | 2020-01-02 | Form Energy Inc. | Metal air electrochemical cell architecture |
| CN109728020A (zh) * | 2018-12-29 | 2019-05-07 | 中国电子科技集团公司第四十四研究所 | 一种三相驱动结构ccd的水平区结构及其驱动电路 |
| EP3991234A4 (en) | 2019-06-28 | 2024-01-17 | Form Energy, Inc. | DEVICE ARCHITECTURES FOR METAL-AIR BATTERIES |
| EP4147296A4 (en) | 2020-05-06 | 2025-08-13 | Form Energy Inc | ELECTROCHEMICAL ENERGY STORAGE SYSTEM WITH DECOUPLED ELECTRODE |
| CN112420808A (zh) * | 2020-11-10 | 2021-02-26 | 浙江大学杭州国际科创中心 | 石墨烯/硅基体沟道电子倍增电荷耦合器件及其读出方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3739240A (en) * | 1971-04-06 | 1973-06-12 | Bell Telephone Labor Inc | Buried channel charge coupled devices |
| NL176406C (nl) * | 1971-10-27 | 1985-04-01 | Philips Nv | Ladingsgekoppelde halfgeleiderinrichting met een halfgeleiderlichaam bevattende een aan een oppervlak grenzende halfgeleiderlaag en middelen om informatie in de vorm van pakketten meerderheidsladingsdragers in te voeren in de halfgeleiderlaag. |
| DE2316612A1 (de) * | 1972-04-03 | 1973-10-18 | Hitachi Ltd | Ladungsuebertragungs-halbleitervorrichtungen |
| GB1457253A (en) * | 1972-12-01 | 1976-12-01 | Mullard Ltd | Semiconductor charge transfer devices |
| NL181766C (nl) * | 1973-03-19 | 1987-10-16 | Philips Nv | Ladingsgekoppelde halfgeleiderschakeling, waarbij pakketten meerderheidsladingsdragers door een halfgeleiderlaag evenwijdig aan de halfgeleiderlaag kunnen worden overgedragen. |
| JPS5028281A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1973-07-13 | 1975-03-22 | ||
| US3987475A (en) * | 1975-11-10 | 1976-10-19 | Northern Electric Company Limited | Nondestructive charge sensing in a charge coupled device |
-
1975
- 1975-06-26 GB GB27093/75A patent/GB1548877A/en not_active Expired
-
1976
- 1976-05-19 US US05/688,008 patent/US4074302A/en not_active Expired - Lifetime
- 1976-06-22 NL NL7606746A patent/NL7606746A/xx not_active Application Discontinuation
- 1976-06-22 AU AU15118/76A patent/AU504261B2/en not_active Expired
- 1976-06-23 SE SE7607216A patent/SE410911B/xx unknown
- 1976-06-23 CA CA255,478A patent/CA1078516A/en not_active Expired
- 1976-06-23 ES ES449176A patent/ES449176A1/es not_active Expired
- 1976-06-23 IT IT7624659A patent/IT1063691B/it active
- 1976-06-25 JP JP51074573A patent/JPS5217772A/ja active Granted
- 1976-06-25 CH CH819976A patent/CH613308A5/xx not_active IP Right Cessation
- 1976-06-25 DE DE2628532A patent/DE2628532C2/de not_active Expired
- 1976-11-26 FR FR7635732A patent/FR2334172B1/fr not_active Expired
-
1981
- 1981-04-07 JP JP5129881A patent/JPS56162870A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5711506B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1982-03-04 |
| GB1548877A (en) | 1979-07-18 |
| FR2334172B1 (fr) | 1984-03-23 |
| ES449176A1 (es) | 1977-12-01 |
| NL7606746A (nl) | 1976-12-28 |
| DE2628532A1 (de) | 1977-02-10 |
| FR2334172A1 (fr) | 1977-07-01 |
| SE410911B (sv) | 1979-11-12 |
| JPS5217772A (en) | 1977-02-09 |
| IT1063691B (it) | 1985-02-11 |
| JPS56162870A (en) | 1981-12-15 |
| AU504261B2 (en) | 1979-10-11 |
| US4074302A (en) | 1978-02-14 |
| DE2628532C2 (de) | 1985-03-07 |
| CH613308A5 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1979-09-14 |
| AU1511876A (en) | 1978-01-05 |
| SE7607216L (sv) | 1976-12-27 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKEX | Expiry |