JPS5217772A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5217772A
JPS5217772A JP51074573A JP7457376A JPS5217772A JP S5217772 A JPS5217772 A JP S5217772A JP 51074573 A JP51074573 A JP 51074573A JP 7457376 A JP7457376 A JP 7457376A JP S5217772 A JPS5217772 A JP S5217772A
Authority
JP
Japan
Prior art keywords
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP51074573A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5711506B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Jiyon Buriyuuwaa Robaato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of JPS5217772A publication Critical patent/JPS5217772A/ja
Publication of JPS5711506B2 publication Critical patent/JPS5711506B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00Charge transfer devices
    • H10D44/40Charge-coupled devices [CCD]
    • H10D44/45Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/454Output structures
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C19/00Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10Integrated devices
    • H10F39/12Image sensors
    • H10F39/15Charge-coupled device [CCD] image sensors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Non-Volatile Memory (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Semiconductor Memories (AREA)
JP51074573A 1975-06-26 1976-06-25 Semiconductor device Granted JPS5217772A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB27093/75A GB1548877A (en) 1975-06-26 1975-06-26 Semiconductor devices
GB4889475 1975-11-27

Publications (2)

Publication Number Publication Date
JPS5217772A true JPS5217772A (en) 1977-02-09
JPS5711506B2 JPS5711506B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1982-03-04

Family

ID=26258625

Family Applications (2)

Application Number Title Priority Date Filing Date
JP51074573A Granted JPS5217772A (en) 1975-06-26 1976-06-25 Semiconductor device
JP5129881A Pending JPS56162870A (en) 1975-06-26 1981-04-07 Semiconductor device

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP5129881A Pending JPS56162870A (en) 1975-06-26 1981-04-07 Semiconductor device

Country Status (12)

Country Link
US (1) US4074302A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (2) JPS5217772A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
AU (1) AU504261B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CA (1) CA1078516A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CH (1) CH613308A5 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE2628532C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
ES (1) ES449176A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
FR (1) FR2334172B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB1548877A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
IT (1) IT1063691B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
NL (1) NL7606746A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
SE (1) SE410911B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5462462U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1977-10-11 1979-05-01

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4166223A (en) * 1978-02-06 1979-08-28 Westinghouse Electric Corp. Dual field effect transistor structure for compensating effects of threshold voltage
US4223329A (en) * 1978-06-30 1980-09-16 International Business Machines Corporation Bipolar dual-channel charge-coupled device
US4559638A (en) * 1978-10-23 1985-12-17 Westinghouse Electric Corp. Charge transfer device having an improved read-out portion
US4672645A (en) * 1978-10-23 1987-06-09 Westinghouse Electric Corp. Charge transfer device having an improved read-out portion
US4227201A (en) * 1979-01-22 1980-10-07 Hughes Aircraft Company CCD Readout structure for display applications
CA1164562A (en) * 1980-10-08 1984-03-27 Manabu Itsumi Semiconductor memory device
US4693561A (en) * 1985-12-23 1987-09-15 The United States Of America As Represented By The Secretary Of The Army Amorphous silicon spatial light modulator
JPH04133336A (ja) * 1990-09-25 1992-05-07 Mitsubishi Electric Corp 電荷転送装置
JPH04148536A (ja) * 1990-10-12 1992-05-21 Sony Corp 転送電荷増幅装置
JP3036175B2 (ja) * 1991-11-11 2000-04-24 日本電気株式会社 電荷転送装置
JP2780564B2 (ja) * 1992-05-20 1998-07-30 日本電気株式会社 電荷転送装置
US5331165A (en) * 1992-12-01 1994-07-19 Ball Corporation Split event reduced x-ray imager
US5436476A (en) * 1993-04-14 1995-07-25 Texas Instruments Incorporated CCD image sensor with active transistor pixel
JP2696057B2 (ja) * 1993-05-11 1998-01-14 ニチモウ株式会社 穀類を原料とした生成物の製造方法
US5369047A (en) * 1993-07-01 1994-11-29 Texas Instruments Incorporated Method of making a BCD low noise high sensitivity charge detection amplifier for high performance image sensors
US5357128A (en) * 1993-08-27 1994-10-18 Goldstar Electron Co., Ltd. Charge detecting device
JP3031815B2 (ja) * 1994-04-01 2000-04-10 シャープ株式会社 電荷検出素子及びその製造方法並びに電荷転送検出装置
DE69512505T2 (de) * 1994-06-23 2000-04-13 Koninklijke Philips Electronics N.V., Eindhoven Ladungsgekoppelte anordnung und bildaufnahmevorrichtung die diese ladungsgekoppelte anordnung enthält
JP2816824B2 (ja) * 1995-09-11 1998-10-27 エルジイ・セミコン・カンパニイ・リミテッド Ccd固体撮像素子
WO1997012402A1 (en) * 1995-09-29 1997-04-03 Analog Devices, Inc. Semiconductor charge potential wells with integrated diffusions
US5838034A (en) 1996-12-10 1998-11-17 National Science Council Infrared optical bulk channel field effect transistor for greater effectiveness
DE19941148B4 (de) * 1999-08-30 2006-08-10 Infineon Technologies Ag Speicher mit Grabenkondensator und Auswahltransistor und Verfahren zu seiner Herstellung
EP2023399B1 (en) * 2003-09-02 2020-01-08 Sony Depthsensing Solutions SA/NV Photonic Mixer
US8906563B2 (en) 2011-11-04 2014-12-09 Fluidic, Inc. Internal convection cell
DE102012206089B4 (de) 2012-03-15 2017-02-02 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Halbleiterstruktur, verfahren zum betreiben derselben und herstellungsverfahren
US10262902B2 (en) * 2015-10-02 2019-04-16 National Institute Of Advanced Industrial Science And Technology Multiplexer and integrated circuit using the same
CA3031513A1 (en) 2016-07-22 2018-01-25 Nantenergy, Inc. Moisture and carbon dioxide management system in electrochemical cells
CA3019358A1 (en) 2016-07-22 2018-01-25 Nantenergy, Inc. Mist elimination system for electrochemical cells
MA53027A (fr) 2018-06-29 2021-05-05 Form Energy Inc Joint à membrane roulante
CN120184457A (zh) 2018-06-29 2025-06-20 福恩能源公司 金属空气电化学电池构架
CN109728020A (zh) * 2018-12-29 2019-05-07 中国电子科技集团公司第四十四研究所 一种三相驱动结构ccd的水平区结构及其驱动电路
CN114207915A (zh) 2019-06-28 2022-03-18 福恩能源公司 金属-空气电池组的设备架构
US12381244B2 (en) 2020-05-06 2025-08-05 Form Energy, Inc. Decoupled electrode electrochemical energy storage system
CN112420808A (zh) * 2020-11-10 2021-02-26 浙江大学杭州国际科创中心 石墨烯/硅基体沟道电子倍增电荷耦合器件及其读出方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5028281A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1973-07-13 1975-03-22

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3739240A (en) * 1971-04-06 1973-06-12 Bell Telephone Labor Inc Buried channel charge coupled devices
NL176406C (nl) * 1971-10-27 1985-04-01 Philips Nv Ladingsgekoppelde halfgeleiderinrichting met een halfgeleiderlichaam bevattende een aan een oppervlak grenzende halfgeleiderlaag en middelen om informatie in de vorm van pakketten meerderheidsladingsdragers in te voeren in de halfgeleiderlaag.
US4032952A (en) * 1972-04-03 1977-06-28 Hitachi, Ltd. Bulk charge transfer semiconductor device
GB1457253A (en) * 1972-12-01 1976-12-01 Mullard Ltd Semiconductor charge transfer devices
NL181766C (nl) * 1973-03-19 1987-10-16 Philips Nv Ladingsgekoppelde halfgeleiderschakeling, waarbij pakketten meerderheidsladingsdragers door een halfgeleiderlaag evenwijdig aan de halfgeleiderlaag kunnen worden overgedragen.
US3987475A (en) * 1975-11-10 1976-10-19 Northern Electric Company Limited Nondestructive charge sensing in a charge coupled device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5028281A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1973-07-13 1975-03-22

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5462462U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1977-10-11 1979-05-01

Also Published As

Publication number Publication date
DE2628532C2 (de) 1985-03-07
CA1078516A (en) 1980-05-27
NL7606746A (nl) 1976-12-28
JPS5711506B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1982-03-04
DE2628532A1 (de) 1977-02-10
SE410911B (sv) 1979-11-12
FR2334172B1 (fr) 1984-03-23
CH613308A5 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1979-09-14
IT1063691B (it) 1985-02-11
US4074302A (en) 1978-02-14
ES449176A1 (es) 1977-12-01
JPS56162870A (en) 1981-12-15
FR2334172A1 (fr) 1977-07-01
GB1548877A (en) 1979-07-18
AU504261B2 (en) 1979-10-11
AU1511876A (en) 1978-01-05
SE7607216L (sv) 1976-12-27

Similar Documents

Publication Publication Date Title
JPS5245288A (en) Semiconductor device
JPS51117880A (en) Semiconductor device
JPS527678A (en) Semiconductor device
JPS5216990A (en) Semiconductor device
JPS56162870A (en) Semiconductor device
GB1542651A (en) Semiconductor devices
GB1548756A (en) Semicondutor device
ZA766145B (en) Semiconductor devices
JPS5271625A (en) Semiconductor rectifier device
GB1558349A (en) Making semiconductor device
JPS5279661A (en) Semiconductor device
GB1553417A (en) Semiconductor device manufacture
GB1552161A (en) Semiconductor devices
JPS5238892A (en) Semiconductor device
JPS51123083A (en) Integrated semiconductor device
JPS5234676A (en) Semiconductor device
GB1554273A (en) Semiconductor device manufacture
JPS52119068A (en) Semiconductor device
JPS529380A (en) Semiconductor device
JPS5287376A (en) Monolithic semiconductor device
JPS526087A (en) Insb semiconductor device
GB1553243A (en) Semiconductor
HK14980A (en) Semiconductor devices
JPS526472A (en) Semiconductor device
JPS57141970A (en) Semiconductor device