FR2334172B1 - Dispositif semi-conducteur - Google Patents

Dispositif semi-conducteur

Info

Publication number
FR2334172B1
FR2334172B1 FR7635732A FR7635732A FR2334172B1 FR 2334172 B1 FR2334172 B1 FR 2334172B1 FR 7635732 A FR7635732 A FR 7635732A FR 7635732 A FR7635732 A FR 7635732A FR 2334172 B1 FR2334172 B1 FR 2334172B1
Authority
FR
France
Prior art keywords
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7635732A
Other languages
English (en)
Other versions
FR2334172A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of FR2334172A1 publication Critical patent/FR2334172A1/fr
Application granted granted Critical
Publication of FR2334172B1 publication Critical patent/FR2334172B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76816—Output structures
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
FR7635732A 1975-06-26 1976-11-26 Dispositif semi-conducteur Expired FR2334172B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB27093/75A GB1548877A (en) 1975-06-26 1975-06-26 Semiconductor devices
GB4889475 1975-11-27

Publications (2)

Publication Number Publication Date
FR2334172A1 FR2334172A1 (fr) 1977-07-01
FR2334172B1 true FR2334172B1 (fr) 1984-03-23

Family

ID=26258625

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7635732A Expired FR2334172B1 (fr) 1975-06-26 1976-11-26 Dispositif semi-conducteur

Country Status (12)

Country Link
US (1) US4074302A (fr)
JP (2) JPS5217772A (fr)
AU (1) AU504261B2 (fr)
CA (1) CA1078516A (fr)
CH (1) CH613308A5 (fr)
DE (1) DE2628532C2 (fr)
ES (1) ES449176A1 (fr)
FR (1) FR2334172B1 (fr)
GB (1) GB1548877A (fr)
IT (1) IT1063691B (fr)
NL (1) NL7606746A (fr)
SE (1) SE410911B (fr)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5462462U (fr) * 1977-10-11 1979-05-01
US4166223A (en) * 1978-02-06 1979-08-28 Westinghouse Electric Corp. Dual field effect transistor structure for compensating effects of threshold voltage
US4223329A (en) * 1978-06-30 1980-09-16 International Business Machines Corporation Bipolar dual-channel charge-coupled device
US4559638A (en) * 1978-10-23 1985-12-17 Westinghouse Electric Corp. Charge transfer device having an improved read-out portion
US4672645A (en) * 1978-10-23 1987-06-09 Westinghouse Electric Corp. Charge transfer device having an improved read-out portion
US4227201A (en) * 1979-01-22 1980-10-07 Hughes Aircraft Company CCD Readout structure for display applications
CA1164562A (fr) * 1980-10-08 1984-03-27 Manabu Itsumi Memoire a semiconducteur
US4693561A (en) * 1985-12-23 1987-09-15 The United States Of America As Represented By The Secretary Of The Army Amorphous silicon spatial light modulator
JPH04133336A (ja) * 1990-09-25 1992-05-07 Mitsubishi Electric Corp 電荷転送装置
JPH04148536A (ja) * 1990-10-12 1992-05-21 Sony Corp 転送電荷増幅装置
JP3036175B2 (ja) * 1991-11-11 2000-04-24 日本電気株式会社 電荷転送装置
JP2780564B2 (ja) * 1992-05-20 1998-07-30 日本電気株式会社 電荷転送装置
US5331165A (en) * 1992-12-01 1994-07-19 Ball Corporation Split event reduced x-ray imager
US5436476A (en) * 1993-04-14 1995-07-25 Texas Instruments Incorporated CCD image sensor with active transistor pixel
JP2696057B2 (ja) * 1993-05-11 1998-01-14 ニチモウ株式会社 穀類を原料とした生成物の製造方法
US5369047A (en) * 1993-07-01 1994-11-29 Texas Instruments Incorporated Method of making a BCD low noise high sensitivity charge detection amplifier for high performance image sensors
US5357128A (en) * 1993-08-27 1994-10-18 Goldstar Electron Co., Ltd. Charge detecting device
JP3031815B2 (ja) * 1994-04-01 2000-04-10 シャープ株式会社 電荷検出素子及びその製造方法並びに電荷転送検出装置
DE69512505T2 (de) * 1994-06-23 2000-04-13 Koninkl Philips Electronics Nv Ladungsgekoppelte anordnung und bildaufnahmevorrichtung die diese ladungsgekoppelte anordnung enthält
JP2816824B2 (ja) * 1995-09-11 1998-10-27 エルジイ・セミコン・カンパニイ・リミテッド Ｃｃｄ固体撮像素子
WO1997012402A1 (fr) * 1995-09-29 1997-04-03 Analog Devices, Inc. Puits de potentiel de charge de semi-conducteurs comportant des diffusions integrees
US5838034A (en) 1996-12-10 1998-11-17 National Science Council Infrared optical bulk channel field effect transistor for greater effectiveness
DE19941148B4 (de) * 1999-08-30 2006-08-10 Infineon Technologies Ag Speicher mit Grabenkondensator und Auswahltransistor und Verfahren zu seiner Herstellung
DK1513202T3 (da) * 2003-09-02 2010-05-10 Univ Bruxelles Detektor til elektromagnetisk stråling ved hjælp af en majoritetsstrøm
US8906563B2 (en) 2011-11-04 2014-12-09 Fluidic, Inc. Internal convection cell
DE102012206089B4 (de) 2012-03-15 2017-02-02 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Halbleiterstruktur, verfahren zum betreiben derselben und herstellungsverfahren
JP6544667B2 (ja) * 2015-10-02 2019-07-17 国立研究開発法人産業技術総合研究所 マルチプレクサ及びこれを用いた集積回路
WO2018018036A1 (fr) 2016-07-22 2018-01-25 Fluidic, Inc. Système de gestion d'humidité et de dioxyde de carbone dans des cellules électrochimiques
CN109728020A (zh) * 2018-12-29 2019-05-07 中国电子科技集团公司第四十四研究所 一种三相驱动结构ccd的水平区结构及其驱动电路
CN112420808A (zh) * 2020-11-10 2021-02-26 浙江大学杭州国际科创中心 石墨烯/硅基体沟道电子倍增电荷耦合器件及其读出方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3739240A (en) * 1971-04-06 1973-06-12 Bell Telephone Labor Inc Buried channel charge coupled devices
NL176406C (nl) * 1971-10-27 1985-04-01 Philips Nv Ladingsgekoppelde halfgeleiderinrichting met een halfgeleiderlichaam bevattende een aan een oppervlak grenzende halfgeleiderlaag en middelen om informatie in de vorm van pakketten meerderheidsladingsdragers in te voeren in de halfgeleiderlaag.
US4032952A (en) * 1972-04-03 1977-06-28 Hitachi, Ltd. Bulk charge transfer semiconductor device
GB1457253A (en) * 1972-12-01 1976-12-01 Mullard Ltd Semiconductor charge transfer devices
NL181766C (nl) * 1973-03-19 1987-10-16 Philips Nv Ladingsgekoppelde halfgeleiderschakeling, waarbij pakketten meerderheidsladingsdragers door een halfgeleiderlaag evenwijdig aan de halfgeleiderlaag kunnen worden overgedragen.
JPS5028281A (fr) * 1973-07-13 1975-03-22
US3987475A (en) * 1975-11-10 1976-10-19 Northern Electric Company Limited Nondestructive charge sensing in a charge coupled device

Also Published As

Publication number Publication date
NL7606746A (nl) 1976-12-28
AU504261B2 (en) 1979-10-11
CH613308A5 (fr) 1979-09-14
SE410911B (sv) 1979-11-12
DE2628532A1 (de) 1977-02-10
AU1511876A (en) 1978-01-05
CA1078516A (fr) 1980-05-27
DE2628532C2 (de) 1985-03-07
ES449176A1 (es) 1977-12-01
JPS5711506B2 (fr) 1982-03-04
US4074302A (en) 1978-02-14
FR2334172A1 (fr) 1977-07-01
JPS5217772A (en) 1977-02-09
GB1548877A (en) 1979-07-18
IT1063691B (it) 1985-02-11
SE7607216L (sv) 1976-12-27
JPS56162870A (en) 1981-12-15

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Legal Events

Date Code Title Description
CD Change of name or company name
ST Notification of lapse