DK1513202T3 - Detektor til elektromagnetisk stråling ved hjælp af en majoritetsstrøm - Google Patents
Detektor til elektromagnetisk stråling ved hjælp af en majoritetsstrømInfo
- Publication number
- DK1513202T3 DK1513202T3 DK03077744.5T DK03077744T DK1513202T3 DK 1513202 T3 DK1513202 T3 DK 1513202T3 DK 03077744 T DK03077744 T DK 03077744T DK 1513202 T3 DK1513202 T3 DK 1513202T3
- Authority
- DK
- Denmark
- Prior art keywords
- detector
- detection region
- current
- majority
- photo
- Prior art date
Links
- 230000005670 electromagnetic radiation Effects 0.000 title 1
- 238000001514 detection method Methods 0.000 abstract 5
- 239000000969 carrier Substances 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 2
- 230000005684 electric field Effects 0.000 abstract 1
- 230000002708 enhancing effect Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 230000035945 sensitivity Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/481—Constructional features, e.g. arrangements of optical elements
- G01S7/4816—Constructional features, e.g. arrangements of optical elements of receivers alone
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/491—Details of non-pulse systems
- G01S7/4912—Receivers
- G01S7/4913—Circuits for detection, sampling, integration or read-out
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
- G01S17/88—Lidar systems specially adapted for specific applications
- G01S17/89—Lidar systems specially adapted for specific applications for mapping or imaging
- G01S17/894—3D imaging with simultaneous measurement of time-of-flight at a 2D array of receiver pixels, e.g. time-of-flight cameras or flash lidar
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Computer Networks & Wireless Communication (AREA)
- Radar, Positioning & Navigation (AREA)
- Remote Sensing (AREA)
- Light Receiving Elements (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Measurement Of Radiation (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP03077744A EP1513202B1 (en) | 2003-09-02 | 2003-09-02 | Detector for electromagnetic radiation assisted by majority current |
Publications (1)
Publication Number | Publication Date |
---|---|
DK1513202T3 true DK1513202T3 (da) | 2010-05-10 |
Family
ID=34130237
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DK03077744.5T DK1513202T3 (da) | 2003-09-02 | 2003-09-02 | Detektor til elektromagnetisk stråling ved hjælp af en majoritetsstrøm |
Country Status (6)
Country | Link |
---|---|
US (1) | US6987268B2 (da) |
EP (2) | EP2023399B1 (da) |
AT (1) | ATE456158T1 (da) |
DE (1) | DE60331060D1 (da) |
DK (1) | DK1513202T3 (da) |
ES (1) | ES2339643T3 (da) |
Families Citing this family (49)
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US20050038504A1 (en) * | 2003-01-22 | 2005-02-17 | Harry Halleriet | Kit for applying drug coating to a medical device in surgeon room |
US8129813B2 (en) | 2003-09-18 | 2012-03-06 | Ic-Haus Gmbh | Optoelectronic sensor and device for 3D distance measurement |
ITMI20062352A1 (it) * | 2006-12-06 | 2008-06-07 | Milano Politecnico | Struttura fotosensibile al colore di una radiazione luminosa |
EP2081004A1 (en) | 2008-01-17 | 2009-07-22 | Vrije Universiteit Brussel | Photospectrometer |
US7615396B1 (en) * | 2008-04-28 | 2009-11-10 | Eugene Ching Lee | Photodiode stack for photo MOS relay using junction isolation technology |
EP2116864A1 (en) | 2008-05-09 | 2009-11-11 | Vrije Universiteit Brussel | TOF range finding with background radiation suppression |
EP2441246A1 (en) | 2009-06-09 | 2012-04-18 | MESA Imaging AG | System for charge-domain electron subtraction in demodulation pixels and method therefor |
GB2474631A (en) * | 2009-10-14 | 2011-04-27 | Optrima Nv | Photonic Mixer |
WO2011085079A1 (en) | 2010-01-06 | 2011-07-14 | Mesa Imaging Ag | Demodulation sensor with separate pixel and storage arrays |
WO2011117161A2 (de) | 2010-03-26 | 2011-09-29 | Iee International Electronics & Engineering S.A. | Lichtsensor mit photoempfindlicher halbleiterstruktur |
US9410800B1 (en) | 2010-08-02 | 2016-08-09 | Heptagon Micro Optics Pte. Ltd. | 3D TOF camera with masked illumination |
GB2486208A (en) * | 2010-12-06 | 2012-06-13 | Melexis Tessenderlo Nv | Demodulation sensor and method for detection and demodulation of temporarily modulated electromagnetic fields for use in Time of Flight applications. |
FR2977978A1 (fr) * | 2011-07-12 | 2013-01-18 | St Microelectronics Grenoble 2 | Dispositif de transfert de charges photogenerees haute frequence et applications |
GB2492848A (en) | 2011-07-15 | 2013-01-16 | Softkinetic Sensors Nv | Optical distance measurement |
US9140795B2 (en) | 2011-09-20 | 2015-09-22 | Mesa Imaging Ag | Time of flight sensor with subframe compression and method |
DE102012109129B4 (de) | 2011-09-27 | 2017-06-29 | Heptagon Micro Optics Pte. Ltd. | Sensor-Pixelanordnung und getrennte Anordnung einer Speicherung und Akkumulation mit parallelem Erfassen und Auslesen |
WO2013104718A2 (en) * | 2012-01-10 | 2013-07-18 | Softkinetic Sensors Nv | Color and non-visible light e.g. ir sensor, namely a multispectral sensor |
US9325920B2 (en) | 2012-01-10 | 2016-04-26 | Softkinetics Sensors Nv | Processing of time-of-flight signals |
EP2703836B1 (en) | 2012-08-30 | 2015-06-24 | Softkinetic Sensors N.V. | TOF illuminating system and TOF camera and method for operating, with control means for driving electronic devices located in the scene |
DE102012109548B4 (de) * | 2012-10-08 | 2024-06-27 | pmdtechnologies ag | Auslesegate |
JP5977366B2 (ja) * | 2013-01-10 | 2016-08-24 | ソフトキネティック センサー エヌブイ | カラー不可視光センサ、例えば、irセンサ、すなわち、マルチスペクトルセンサ |
EP3792662A1 (en) | 2014-01-13 | 2021-03-17 | Sony Depthsensing Solutions SA/NV | Time-of-flight system for use with an illumination system |
EP2960952B1 (en) | 2014-06-27 | 2019-01-02 | Sony Depthsensing Solutions SA/NV | Majority carrier current assisted radiation detector device |
TWI679442B (zh) | 2014-12-02 | 2019-12-11 | 新加坡商新加坡恒立私人有限公司 | 深度感測模組及深度感測方法 |
GB201421512D0 (en) * | 2014-12-03 | 2015-01-14 | Melexis Technologies Nv | A semiconductor pixel unit for simultaneously sensing visible light and near-infrared light, and a semiconductor sensor comprising same |
US10134926B2 (en) | 2015-02-03 | 2018-11-20 | Microsoft Technology Licensing, Llc | Quantum-efficiency-enhanced time-of-flight detector |
TW202335281A (zh) | 2015-08-04 | 2023-09-01 | 光程研創股份有限公司 | 光感測系統 |
CN108140656B (zh) | 2015-08-27 | 2022-07-26 | 光程研创股份有限公司 | 宽频谱光学传感器 |
US10739443B2 (en) | 2015-11-06 | 2020-08-11 | Artilux, Inc. | High-speed light sensing apparatus II |
US10418407B2 (en) | 2015-11-06 | 2019-09-17 | Artilux, Inc. | High-speed light sensing apparatus III |
US10886309B2 (en) | 2015-11-06 | 2021-01-05 | Artilux, Inc. | High-speed light sensing apparatus II |
US10254389B2 (en) | 2015-11-06 | 2019-04-09 | Artilux Corporation | High-speed light sensing apparatus |
EP3193190B1 (en) | 2016-01-15 | 2023-04-12 | Sony Depthsensing Solutions N.V. | A detector device with majority current and a circuitry for controlling the current |
EP3193369B1 (en) | 2016-01-15 | 2021-11-17 | Sony Depthsensing Solutions N.V. | A detector device with majority current and isolation means |
CN107851656B (zh) * | 2016-03-04 | 2022-12-16 | 索尼公司 | 摄像装置和测距系统 |
KR102391838B1 (ko) | 2016-06-20 | 2022-04-29 | 소니 세미컨덕터 솔루션즈 가부시키가이샤 | 드라이버 회로 및 전자 디바이스 |
WO2018029372A1 (en) | 2016-08-12 | 2018-02-15 | Softkinetic Sensors N.V. | A demodulator with a carrier generating pinned photodiode |
BE1025050B1 (fr) | 2016-08-12 | 2018-10-12 | Softkinetic Sensors Nv | Démodulateur doté d’une photodiode pincée génératrice de porteurs et procédé de fonctionnement associé |
JP7167061B2 (ja) * | 2017-05-08 | 2022-11-08 | フリーイェ・ユニヴェルシテイト・ブリュッセル | 電磁放射線のファーストゲート式検出のための検出器 |
WO2018206606A1 (en) | 2017-05-08 | 2018-11-15 | Vrije Universiteit Brussel | Detector for fast-gated detection of electromagnetic radiation |
KR20200110717A (ko) * | 2017-06-26 | 2020-09-25 | 소니 세미컨덕터 솔루션즈 가부시키가이샤 | 단일-광자 애벌런치 다이오드 및 단일-광자 애벌런치 다이오드를 작동시키기 위한 방법 |
US11102433B2 (en) | 2017-08-09 | 2021-08-24 | Sony Semiconductor Solutions Corporation | Solid-state imaging device having a photoelectric conversion element with multiple electrodes |
CN109729759B (zh) * | 2017-08-30 | 2021-09-17 | 索尼半导体解决方案公司 | 成像元件和成像装置 |
US11105928B2 (en) | 2018-02-23 | 2021-08-31 | Artilux, Inc. | Light-sensing apparatus and light-sensing method thereof |
US11482553B2 (en) | 2018-02-23 | 2022-10-25 | Artilux, Inc. | Photo-detecting apparatus with subpixels |
TWI758599B (zh) | 2018-04-08 | 2022-03-21 | 美商光程研創股份有限公司 | 光偵測裝置 |
US11574942B2 (en) | 2018-12-12 | 2023-02-07 | Artilux, Inc. | Semiconductor device with low dark noise |
TW202429694A (zh) | 2019-08-28 | 2024-07-16 | 美商光程研創股份有限公司 | 具低暗電流之光偵測裝置 |
EP3907526B1 (en) | 2020-05-08 | 2024-03-13 | Melexis Technologies NV | A photonic mixer device |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1548877A (en) * | 1975-06-26 | 1979-07-18 | Mullard Ltd | Semiconductor devices |
EP1009984B1 (de) | 1996-09-05 | 2003-11-19 | SCHWARTE, Rudolf | Verfahren und vorrichtung zur bestimmung der phasen- und/oder amplitudeninformation einer elektromagnetischen welle |
EP0883187A1 (en) * | 1997-06-04 | 1998-12-09 | Interuniversitair Micro-Elektronica Centrum Vzw | A detector for electromagnetic radiation, pixel structure with high sensitivity using such detector and method of manufacturing such detector |
EP0875939A1 (en) | 1997-04-30 | 1998-11-04 | Interuniversitair Micro-Elektronica Centrum Vzw | A spatially-modulated detector for electromagnetic radiation |
DE19821974B4 (de) * | 1998-05-18 | 2008-04-10 | Schwarte, Rudolf, Prof. Dr.-Ing. | Vorrichtung und Verfahren zur Erfassung von Phase und Amplitude elektromagnetischer Wellen |
KR100852446B1 (ko) * | 2000-10-16 | 2008-08-14 | 슈바르테, 루돌프 | 신호 파형의 진폭 및 위상을 감지 및 처리하기 위한 방법 |
US6597025B2 (en) * | 2001-03-15 | 2003-07-22 | Koninklijke Philips Electronics N.V. | Light sensitive semiconductor component |
US6515903B1 (en) * | 2002-01-16 | 2003-02-04 | Advanced Micro Devices, Inc. | Negative pump regulator using MOS capacitor |
-
2003
- 2003-09-02 DE DE60331060T patent/DE60331060D1/de not_active Expired - Lifetime
- 2003-09-02 ES ES03077744T patent/ES2339643T3/es not_active Expired - Lifetime
- 2003-09-02 EP EP08167724.7A patent/EP2023399B1/en not_active Expired - Lifetime
- 2003-09-02 AT AT03077744T patent/ATE456158T1/de not_active IP Right Cessation
- 2003-09-02 DK DK03077744.5T patent/DK1513202T3/da active
- 2003-09-02 EP EP03077744A patent/EP1513202B1/en not_active Expired - Lifetime
-
2004
- 2004-08-30 US US10/929,277 patent/US6987268B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
ES2339643T3 (es) | 2010-05-24 |
EP2023399A3 (en) | 2015-04-22 |
US20050051730A1 (en) | 2005-03-10 |
EP1513202A1 (en) | 2005-03-09 |
US6987268B2 (en) | 2006-01-17 |
EP2023399B1 (en) | 2020-01-08 |
ATE456158T1 (de) | 2010-02-15 |
DE60331060D1 (de) | 2010-03-11 |
EP1513202B1 (en) | 2010-01-20 |
EP2023399A2 (en) | 2009-02-11 |
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