DK1513202T3 - Detektor til elektromagnetisk stråling ved hjælp af en majoritetsstrøm - Google Patents

Detektor til elektromagnetisk stråling ved hjælp af en majoritetsstrøm

Info

Publication number
DK1513202T3
DK1513202T3 DK03077744.5T DK03077744T DK1513202T3 DK 1513202 T3 DK1513202 T3 DK 1513202T3 DK 03077744 T DK03077744 T DK 03077744T DK 1513202 T3 DK1513202 T3 DK 1513202T3
Authority
DK
Denmark
Prior art keywords
detector
detection region
current
majority
photo
Prior art date
Application number
DK03077744.5T
Other languages
English (en)
Inventor
Maarten Kuijk
Nieuwenhove Daniel Van
Original Assignee
Univ Bruxelles
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Bruxelles filed Critical Univ Bruxelles
Application granted granted Critical
Publication of DK1513202T3 publication Critical patent/DK1513202T3/da

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01SRADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/481Constructional features, e.g. arrangements of optical elements
    • G01S7/4816Constructional features, e.g. arrangements of optical elements of receivers alone
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01SRADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/491Details of non-pulse systems
    • G01S7/4912Receivers
    • G01S7/4913Circuits for detection, sampling, integration or read-out
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101Devices sensitive to infrared, visible or ultraviolet radiation
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01SRADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S17/00Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
    • G01S17/88Lidar systems specially adapted for specific applications
    • G01S17/89Lidar systems specially adapted for specific applications for mapping or imaging
    • G01S17/8943D imaging with simultaneous measurement of time-of-flight at a 2D array of receiver pixels, e.g. time-of-flight cameras or flash lidar

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Light Receiving Elements (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Measurement Of Radiation (AREA)
DK03077744.5T 2003-09-02 2003-09-02 Detektor til elektromagnetisk stråling ved hjælp af en majoritetsstrøm DK1513202T3 (da)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP03077744A EP1513202B1 (en) 2003-09-02 2003-09-02 Detector for electromagnetic radiation assisted by majority current

Publications (1)

Publication Number Publication Date
DK1513202T3 true DK1513202T3 (da) 2010-05-10

Family

ID=34130237

Family Applications (1)

Application Number Title Priority Date Filing Date
DK03077744.5T DK1513202T3 (da) 2003-09-02 2003-09-02 Detektor til elektromagnetisk stråling ved hjælp af en majoritetsstrøm

Country Status (6)

Country Link
US (1) US6987268B2 (da)
EP (2) EP2023399B1 (da)
AT (1) ATE456158T1 (da)
DE (1) DE60331060D1 (da)
DK (1) DK1513202T3 (da)
ES (1) ES2339643T3 (da)

Families Citing this family (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050038504A1 (en) * 2003-01-22 2005-02-17 Harry Halleriet Kit for applying drug coating to a medical device in surgeon room
US8129813B2 (en) 2003-09-18 2012-03-06 Ic-Haus Gmbh Optoelectronic sensor and device for 3D distance measurement
ITMI20062352A1 (it) * 2006-12-06 2008-06-07 Milano Politecnico Struttura fotosensibile al colore di una radiazione luminosa
EP2081004A1 (en) 2008-01-17 2009-07-22 Vrije Universiteit Brussel Photospectrometer
US7615396B1 (en) * 2008-04-28 2009-11-10 Eugene Ching Lee Photodiode stack for photo MOS relay using junction isolation technology
EP2116864A1 (en) 2008-05-09 2009-11-11 Vrije Universiteit Brussel TOF range finding with background radiation suppression
EP2441246A1 (en) 2009-06-09 2012-04-18 MESA Imaging AG System for charge-domain electron subtraction in demodulation pixels and method therefor
GB2474631A (en) * 2009-10-14 2011-04-27 Optrima Nv Photonic Mixer
WO2011085079A1 (en) 2010-01-06 2011-07-14 Mesa Imaging Ag Demodulation sensor with separate pixel and storage arrays
WO2011117161A2 (de) 2010-03-26 2011-09-29 Iee International Electronics & Engineering S.A. Lichtsensor mit photoempfindlicher halbleiterstruktur
US9410800B1 (en) 2010-08-02 2016-08-09 Heptagon Micro Optics Pte. Ltd. 3D TOF camera with masked illumination
GB2486208A (en) * 2010-12-06 2012-06-13 Melexis Tessenderlo Nv Demodulation sensor and method for detection and demodulation of temporarily modulated electromagnetic fields for use in Time of Flight applications.
FR2977978A1 (fr) * 2011-07-12 2013-01-18 St Microelectronics Grenoble 2 Dispositif de transfert de charges photogenerees haute frequence et applications
GB2492848A (en) 2011-07-15 2013-01-16 Softkinetic Sensors Nv Optical distance measurement
US9140795B2 (en) 2011-09-20 2015-09-22 Mesa Imaging Ag Time of flight sensor with subframe compression and method
DE102012109129B4 (de) 2011-09-27 2017-06-29 Heptagon Micro Optics Pte. Ltd. Sensor-Pixelanordnung und getrennte Anordnung einer Speicherung und Akkumulation mit parallelem Erfassen und Auslesen
WO2013104718A2 (en) * 2012-01-10 2013-07-18 Softkinetic Sensors Nv Color and non-visible light e.g. ir sensor, namely a multispectral sensor
US9325920B2 (en) 2012-01-10 2016-04-26 Softkinetics Sensors Nv Processing of time-of-flight signals
EP2703836B1 (en) 2012-08-30 2015-06-24 Softkinetic Sensors N.V. TOF illuminating system and TOF camera and method for operating, with control means for driving electronic devices located in the scene
DE102012109548B4 (de) * 2012-10-08 2024-06-27 pmdtechnologies ag Auslesegate
JP5977366B2 (ja) * 2013-01-10 2016-08-24 ソフトキネティック センサー エヌブイ カラー不可視光センサ、例えば、irセンサ、すなわち、マルチスペクトルセンサ
EP3792662A1 (en) 2014-01-13 2021-03-17 Sony Depthsensing Solutions SA/NV Time-of-flight system for use with an illumination system
EP2960952B1 (en) 2014-06-27 2019-01-02 Sony Depthsensing Solutions SA/NV Majority carrier current assisted radiation detector device
TWI679442B (zh) 2014-12-02 2019-12-11 新加坡商新加坡恒立私人有限公司 深度感測模組及深度感測方法
GB201421512D0 (en) * 2014-12-03 2015-01-14 Melexis Technologies Nv A semiconductor pixel unit for simultaneously sensing visible light and near-infrared light, and a semiconductor sensor comprising same
US10134926B2 (en) 2015-02-03 2018-11-20 Microsoft Technology Licensing, Llc Quantum-efficiency-enhanced time-of-flight detector
TW202335281A (zh) 2015-08-04 2023-09-01 光程研創股份有限公司 光感測系統
CN108140656B (zh) 2015-08-27 2022-07-26 光程研创股份有限公司 宽频谱光学传感器
US10739443B2 (en) 2015-11-06 2020-08-11 Artilux, Inc. High-speed light sensing apparatus II
US10418407B2 (en) 2015-11-06 2019-09-17 Artilux, Inc. High-speed light sensing apparatus III
US10886309B2 (en) 2015-11-06 2021-01-05 Artilux, Inc. High-speed light sensing apparatus II
US10254389B2 (en) 2015-11-06 2019-04-09 Artilux Corporation High-speed light sensing apparatus
EP3193190B1 (en) 2016-01-15 2023-04-12 Sony Depthsensing Solutions N.V. A detector device with majority current and a circuitry for controlling the current
EP3193369B1 (en) 2016-01-15 2021-11-17 Sony Depthsensing Solutions N.V. A detector device with majority current and isolation means
CN107851656B (zh) * 2016-03-04 2022-12-16 索尼公司 摄像装置和测距系统
KR102391838B1 (ko) 2016-06-20 2022-04-29 소니 세미컨덕터 솔루션즈 가부시키가이샤 드라이버 회로 및 전자 디바이스
WO2018029372A1 (en) 2016-08-12 2018-02-15 Softkinetic Sensors N.V. A demodulator with a carrier generating pinned photodiode
BE1025050B1 (fr) 2016-08-12 2018-10-12 Softkinetic Sensors Nv Démodulateur doté d’une photodiode pincée génératrice de porteurs et procédé de fonctionnement associé
JP7167061B2 (ja) * 2017-05-08 2022-11-08 フリーイェ・ユニヴェルシテイト・ブリュッセル 電磁放射線のファーストゲート式検出のための検出器
WO2018206606A1 (en) 2017-05-08 2018-11-15 Vrije Universiteit Brussel Detector for fast-gated detection of electromagnetic radiation
KR20200110717A (ko) * 2017-06-26 2020-09-25 소니 세미컨덕터 솔루션즈 가부시키가이샤 단일-광자 애벌런치 다이오드 및 단일-광자 애벌런치 다이오드를 작동시키기 위한 방법
US11102433B2 (en) 2017-08-09 2021-08-24 Sony Semiconductor Solutions Corporation Solid-state imaging device having a photoelectric conversion element with multiple electrodes
CN109729759B (zh) * 2017-08-30 2021-09-17 索尼半导体解决方案公司 成像元件和成像装置
US11105928B2 (en) 2018-02-23 2021-08-31 Artilux, Inc. Light-sensing apparatus and light-sensing method thereof
US11482553B2 (en) 2018-02-23 2022-10-25 Artilux, Inc. Photo-detecting apparatus with subpixels
TWI758599B (zh) 2018-04-08 2022-03-21 美商光程研創股份有限公司 光偵測裝置
US11574942B2 (en) 2018-12-12 2023-02-07 Artilux, Inc. Semiconductor device with low dark noise
TW202429694A (zh) 2019-08-28 2024-07-16 美商光程研創股份有限公司 具低暗電流之光偵測裝置
EP3907526B1 (en) 2020-05-08 2024-03-13 Melexis Technologies NV A photonic mixer device

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1548877A (en) * 1975-06-26 1979-07-18 Mullard Ltd Semiconductor devices
EP1009984B1 (de) 1996-09-05 2003-11-19 SCHWARTE, Rudolf Verfahren und vorrichtung zur bestimmung der phasen- und/oder amplitudeninformation einer elektromagnetischen welle
EP0883187A1 (en) * 1997-06-04 1998-12-09 Interuniversitair Micro-Elektronica Centrum Vzw A detector for electromagnetic radiation, pixel structure with high sensitivity using such detector and method of manufacturing such detector
EP0875939A1 (en) 1997-04-30 1998-11-04 Interuniversitair Micro-Elektronica Centrum Vzw A spatially-modulated detector for electromagnetic radiation
DE19821974B4 (de) * 1998-05-18 2008-04-10 Schwarte, Rudolf, Prof. Dr.-Ing. Vorrichtung und Verfahren zur Erfassung von Phase und Amplitude elektromagnetischer Wellen
KR100852446B1 (ko) * 2000-10-16 2008-08-14 슈바르테, 루돌프 신호 파형의 진폭 및 위상을 감지 및 처리하기 위한 방법
US6597025B2 (en) * 2001-03-15 2003-07-22 Koninklijke Philips Electronics N.V. Light sensitive semiconductor component
US6515903B1 (en) * 2002-01-16 2003-02-04 Advanced Micro Devices, Inc. Negative pump regulator using MOS capacitor

Also Published As

Publication number Publication date
ES2339643T3 (es) 2010-05-24
EP2023399A3 (en) 2015-04-22
US20050051730A1 (en) 2005-03-10
EP1513202A1 (en) 2005-03-09
US6987268B2 (en) 2006-01-17
EP2023399B1 (en) 2020-01-08
ATE456158T1 (de) 2010-02-15
DE60331060D1 (de) 2010-03-11
EP1513202B1 (en) 2010-01-20
EP2023399A2 (en) 2009-02-11

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