CH613308A5 - - Google Patents
Info
- Publication number
- CH613308A5 CH613308A5 CH819976A CH819976A CH613308A5 CH 613308 A5 CH613308 A5 CH 613308A5 CH 819976 A CH819976 A CH 819976A CH 819976 A CH819976 A CH 819976A CH 613308 A5 CH613308 A5 CH 613308A5
- Authority
- CH
- Switzerland
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D44/00—Charge transfer devices
- H10D44/40—Charge-coupled devices [CCD]
- H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes
- H10D44/454—Output structures
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
- G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/15—Charge-coupled device [CCD] image sensors
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB27093/75A GB1548877A (en) | 1975-06-26 | 1975-06-26 | Semiconductor devices |
| GB4889475 | 1975-11-27 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CH613308A5 true CH613308A5 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1979-09-14 |
Family
ID=26258625
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CH819976A CH613308A5 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1975-06-26 | 1976-06-25 |
Country Status (12)
Families Citing this family (35)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5462462U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1977-10-11 | 1979-05-01 | ||
| US4166223A (en) * | 1978-02-06 | 1979-08-28 | Westinghouse Electric Corp. | Dual field effect transistor structure for compensating effects of threshold voltage |
| US4223329A (en) * | 1978-06-30 | 1980-09-16 | International Business Machines Corporation | Bipolar dual-channel charge-coupled device |
| US4559638A (en) * | 1978-10-23 | 1985-12-17 | Westinghouse Electric Corp. | Charge transfer device having an improved read-out portion |
| US4672645A (en) * | 1978-10-23 | 1987-06-09 | Westinghouse Electric Corp. | Charge transfer device having an improved read-out portion |
| US4227201A (en) * | 1979-01-22 | 1980-10-07 | Hughes Aircraft Company | CCD Readout structure for display applications |
| CA1164562A (en) * | 1980-10-08 | 1984-03-27 | Manabu Itsumi | Semiconductor memory device |
| US4693561A (en) * | 1985-12-23 | 1987-09-15 | The United States Of America As Represented By The Secretary Of The Army | Amorphous silicon spatial light modulator |
| JPH04133336A (ja) * | 1990-09-25 | 1992-05-07 | Mitsubishi Electric Corp | 電荷転送装置 |
| JPH04148536A (ja) * | 1990-10-12 | 1992-05-21 | Sony Corp | 転送電荷増幅装置 |
| JP3036175B2 (ja) * | 1991-11-11 | 2000-04-24 | 日本電気株式会社 | 電荷転送装置 |
| JP2780564B2 (ja) * | 1992-05-20 | 1998-07-30 | 日本電気株式会社 | 電荷転送装置 |
| US5331165A (en) * | 1992-12-01 | 1994-07-19 | Ball Corporation | Split event reduced x-ray imager |
| US5436476A (en) * | 1993-04-14 | 1995-07-25 | Texas Instruments Incorporated | CCD image sensor with active transistor pixel |
| JP2696057B2 (ja) * | 1993-05-11 | 1998-01-14 | ニチモウ株式会社 | 穀類を原料とした生成物の製造方法 |
| US5369047A (en) * | 1993-07-01 | 1994-11-29 | Texas Instruments Incorporated | Method of making a BCD low noise high sensitivity charge detection amplifier for high performance image sensors |
| US5357128A (en) * | 1993-08-27 | 1994-10-18 | Goldstar Electron Co., Ltd. | Charge detecting device |
| JP3031815B2 (ja) * | 1994-04-01 | 2000-04-10 | シャープ株式会社 | 電荷検出素子及びその製造方法並びに電荷転送検出装置 |
| EP0719456B1 (en) * | 1994-06-23 | 1999-09-29 | Koninklijke Philips Electronics N.V. | Charge coupled device, and imaging device comprising such a charge coupled device |
| JP2816824B2 (ja) * | 1995-09-11 | 1998-10-27 | エルジイ・セミコン・カンパニイ・リミテッド | Ｃｃｄ固体撮像素子 |
| WO1997012402A1 (en) * | 1995-09-29 | 1997-04-03 | Analog Devices, Inc. | Semiconductor charge potential wells with integrated diffusions |
| US5838034A (en) * | 1996-12-10 | 1998-11-17 | National Science Council | Infrared optical bulk channel field effect transistor for greater effectiveness |
| DE19941148B4 (de) * | 1999-08-30 | 2006-08-10 | Infineon Technologies Ag | Speicher mit Grabenkondensator und Auswahltransistor und Verfahren zu seiner Herstellung |
| DE60331060D1 (de) * | 2003-09-02 | 2010-03-11 | Univ Bruxelles | Ein durch einen Strom aus Majoritätsträgern unterstützter Detektor für elektromagnetische Strahlung |
| US8906563B2 (en) | 2011-11-04 | 2014-12-09 | Fluidic, Inc. | Internal convection cell |
| DE102012206089B4 (de) | 2012-03-15 | 2017-02-02 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Halbleiterstruktur, verfahren zum betreiben derselben und herstellungsverfahren |
| JP6544667B2 (ja) * | 2015-10-02 | 2019-07-17 | 国立研究開発法人産業技術総合研究所 | マルチプレクサ及びこれを用いた集積回路 |
| BR112019000713B1 (pt) | 2016-07-22 | 2023-04-25 | Nantenergy, Inc | Célula eletroquímica e método de conservar umidade dentro de uma célula eletroquímica |
| AU2017298995B2 (en) | 2016-07-22 | 2019-08-29 | Form Energy, Inc. | Mist elimination system for electrochemical cells |
| MA53027A (fr) | 2018-06-29 | 2021-05-05 | Form Energy Inc | Joint à membrane roulante |
| WO2020006419A1 (en) | 2018-06-29 | 2020-01-02 | Form Energy Inc. | Metal air electrochemical cell architecture |
| CN109728020A (zh) * | 2018-12-29 | 2019-05-07 | 中国电子科技集团公司第四十四研究所 | 一种三相驱动结构ccd的水平区结构及其驱动电路 |
| EP3991234A4 (en) | 2019-06-28 | 2024-01-17 | Form Energy, Inc. | DEVICE ARCHITECTURES FOR METAL-AIR BATTERIES |
| EP4147296A4 (en) | 2020-05-06 | 2025-08-13 | Form Energy Inc | ELECTROCHEMICAL ENERGY STORAGE SYSTEM WITH DECOUPLED ELECTRODE |
| CN112420808A (zh) * | 2020-11-10 | 2021-02-26 | 浙江大学杭州国际科创中心 | 石墨烯/硅基体沟道电子倍增电荷耦合器件及其读出方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3739240A (en) * | 1971-04-06 | 1973-06-12 | Bell Telephone Labor Inc | Buried channel charge coupled devices |
| NL176406C (nl) * | 1971-10-27 | 1985-04-01 | Philips Nv | Ladingsgekoppelde halfgeleiderinrichting met een halfgeleiderlichaam bevattende een aan een oppervlak grenzende halfgeleiderlaag en middelen om informatie in de vorm van pakketten meerderheidsladingsdragers in te voeren in de halfgeleiderlaag. |
| DE2316612A1 (de) * | 1972-04-03 | 1973-10-18 | Hitachi Ltd | Ladungsuebertragungs-halbleitervorrichtungen |
| GB1457253A (en) * | 1972-12-01 | 1976-12-01 | Mullard Ltd | Semiconductor charge transfer devices |
| NL181766C (nl) * | 1973-03-19 | 1987-10-16 | Philips Nv | Ladingsgekoppelde halfgeleiderschakeling, waarbij pakketten meerderheidsladingsdragers door een halfgeleiderlaag evenwijdig aan de halfgeleiderlaag kunnen worden overgedragen. |
| JPS5028281A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1973-07-13 | 1975-03-22 | ||
| US3987475A (en) * | 1975-11-10 | 1976-10-19 | Northern Electric Company Limited | Nondestructive charge sensing in a charge coupled device |
-
1975
- 1975-06-26 GB GB27093/75A patent/GB1548877A/en not_active Expired
-
1976
- 1976-05-19 US US05/688,008 patent/US4074302A/en not_active Expired - Lifetime
- 1976-06-22 NL NL7606746A patent/NL7606746A/xx not_active Application Discontinuation
- 1976-06-22 AU AU15118/76A patent/AU504261B2/en not_active Expired
- 1976-06-23 SE SE7607216A patent/SE410911B/xx unknown
- 1976-06-23 CA CA255,478A patent/CA1078516A/en not_active Expired
- 1976-06-23 ES ES449176A patent/ES449176A1/es not_active Expired
- 1976-06-23 IT IT7624659A patent/IT1063691B/it active
- 1976-06-25 JP JP51074573A patent/JPS5217772A/ja active Granted
- 1976-06-25 CH CH819976A patent/CH613308A5/xx not_active IP Right Cessation
- 1976-06-25 DE DE2628532A patent/DE2628532C2/de not_active Expired
- 1976-11-26 FR FR7635732A patent/FR2334172B1/fr not_active Expired
-
1981
- 1981-04-07 JP JP5129881A patent/JPS56162870A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5711506B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1982-03-04 |
| GB1548877A (en) | 1979-07-18 |
| FR2334172B1 (fr) | 1984-03-23 |
| ES449176A1 (es) | 1977-12-01 |
| NL7606746A (nl) | 1976-12-28 |
| DE2628532A1 (de) | 1977-02-10 |
| FR2334172A1 (fr) | 1977-07-01 |
| SE410911B (sv) | 1979-11-12 |
| JPS5217772A (en) | 1977-02-09 |
| IT1063691B (it) | 1985-02-11 |
| JPS56162870A (en) | 1981-12-15 |
| AU504261B2 (en) | 1979-10-11 |
| US4074302A (en) | 1978-02-14 |
| DE2628532C2 (de) | 1985-03-07 |
| AU1511876A (en) | 1978-01-05 |
| CA1078516A (en) | 1980-05-27 |
| SE7607216L (sv) | 1976-12-27 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PL | Patent ceased | ||
| PL | Patent ceased |