EP2166548B1 - External electrodes for ceramic electronic component and method for manufacturing the same - Google Patents
External electrodes for ceramic electronic component and method for manufacturing the same Download PDFInfo
- Publication number
- EP2166548B1 EP2166548B1 EP09011235.0A EP09011235A EP2166548B1 EP 2166548 B1 EP2166548 B1 EP 2166548B1 EP 09011235 A EP09011235 A EP 09011235A EP 2166548 B1 EP2166548 B1 EP 2166548B1
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- European Patent Office
- Prior art keywords
- ceramic
- component body
- electrode
- external electrode
- ceramic component
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- 239000000919 ceramic Substances 0.000 title claims description 173
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 238000000034 method Methods 0.000 title claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 103
- 239000002184 metal Substances 0.000 claims description 103
- 239000000843 powder Substances 0.000 claims description 49
- 229920005989 resin Polymers 0.000 claims description 49
- 239000011347 resin Substances 0.000 claims description 49
- 238000005245 sintering Methods 0.000 claims description 45
- 239000011521 glass Substances 0.000 claims description 44
- 239000010949 copper Substances 0.000 claims description 17
- 238000010438 heat treatment Methods 0.000 claims description 7
- 229910052796 boron Inorganic materials 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 238000010304 firing Methods 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052783 alkali metal Inorganic materials 0.000 claims description 4
- 150000001340 alkali metals Chemical class 0.000 claims description 4
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims description 4
- 150000001342 alkaline earth metals Chemical class 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 229910052723 transition metal Inorganic materials 0.000 claims description 4
- 150000003624 transition metals Chemical class 0.000 claims description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 2
- 229910052698 phosphorus Inorganic materials 0.000 claims description 2
- 239000011574 phosphorus Substances 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 239000003985 ceramic capacitor Substances 0.000 description 33
- 238000012360 testing method Methods 0.000 description 16
- 230000002950 deficient Effects 0.000 description 15
- 238000005452 bending Methods 0.000 description 14
- 238000010586 diagram Methods 0.000 description 11
- 230000015572 biosynthetic process Effects 0.000 description 7
- 238000007747 plating Methods 0.000 description 6
- 230000007423 decrease Effects 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 230000009467 reduction Effects 0.000 description 5
- 238000011161 development Methods 0.000 description 4
- 239000003822 epoxy resin Substances 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 229920001187 thermosetting polymer Polymers 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 244000025254 Cannabis sativa Species 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229910006776 Si—Zn Inorganic materials 0.000 description 1
- -1 acryl Chemical group 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000001723 curing Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/33—Thin- or thick-film capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/228—Terminals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/228—Terminals
- H01G4/232—Terminals electrically connecting two or more layers of a stacked or rolled capacitor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/30—Stacked capacitors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/43—Electric condenser making
- Y10T29/435—Solid dielectric type
Definitions
- the present invention relates to a ceramic electronic component and a method for manufacturing the same.
- the present invention relates to a ceramic electronic component, such as a laminated ceramic capacitor, in which a terminal electrode is formed at the end surface of a ceramic component body and a method for manufacturing the same.
- Fig. 9 is a diagram illustrating an example of a former ceramic electronic component.
- a ceramic electronic component 1 contains a ceramic electronic component body 2.
- the ceramic electronic component body 2 contains layers of internal electrodes 3 and ceramic layers 4.
- the internal electrodes 3 are led to two end surfaces of the ceramic electronic component body 2.
- a metal layer 5 is formed in such a manner as to be connected to the internal electrodes 3.
- the metal layer 5 is formed by printing a conductive paste containing metal powder to the end surface of the ceramic electronic component body 2.
- the metal layer 5 is formed in such a manner as to wrap around from the end surface of the ceramic component body 2 to a part of the side surface.
- On the metal layer 5, a conductive resin layer 6 is further formed.
- the conductive resin layer 6 is formed by supplying a mixture of metal powder and a thermosetting resin, such as an epoxy resin, to the metal layer 5, and heat curing the same.
- the conductive resin layer 6 is formed in such a manner as to entirely cover the metal layer 5.
- a plating film 7 containing a lower film containing Ni (Nickel) or the like and a surface film containing Sn or the like is formed on the conductive resin layer 6.
- JP-A-10284343 discloses a multilayered ceramic capacitor 10, external electrodes 4 of a double layered structure, which are constituted of sintered type electrode layers 4a as first electrode layers electrically connected with inner electrodes 1 and conductive resin electrode layers 4b as second electrode layers, are formed on both end surfaces of a chip typed element 3 which is obtained by baking a green chip obtained by laminating, ceramic dielectric 2 having inner electrodes 1.
- the permeation length A of the sintered type electrode layer 4a of the first electrode layer constituting the external electrode 4 is set to be smaller than or equal to 0.7 times the permeation length B of the conductive resin electrode layer 4b of the second electrode.
- a ceramic electronic component contains: a ceramic component body having two end surfaces to which internal electrodes are led and side surfaces connecting the two end surfaces; first external electrodes containing a metal sintered compact and formed in such a manner as to wrap around from the two end surfaces of the ceramic component body to a part of the side surfaces to be connected to the internal electrodes; and second external electrodes containing a conductive resin and formed in such a manner as to entirely cover the first external electrodes at the side surfaces of the ceramic component body; in which the ends of the first external electrodes covered with the second electrodes are apart from the side surfaces of the ceramic electronic component.
- the first external electrodes can be formed of a material containing Cu (Copper) and Si (Silicon) or B (Boron) as a main component and glass containing at least one member of alkali metals, alkaline earth metals, and transition metals.
- the ends of the first external electrodes containing a metal sintered compact are apart from the side surfaces of the ceramic component body. This is because a stress generated when the first external electrodes are sintered acts so that the ends of the first external electrodes are lifted off.
- the first external electrodes having such a shape can be obtained by the use of a material containing a conductive powder having a relatively low melting point, such as Cu, and Si or B as a main component and glass containing at least one member of alkali metals, alkaline earth metals, and transition metals.
- a material containing a conductive powder having a relatively low melting point such as Cu, and Si or B as a main component and glass containing at least one member of alkali metals, alkaline earth metals, and transition metals.
- the length of the first external electrode in contact with the side surface of the ceramic component body is defined as a
- the distance from the end surface of the ceramic component body to the end of the first external electrode at the side surface of the ceramic component body is defined as A
- the thickness from the side surface of the ceramic component body to the outside surface of the first external electrode is defined as b
- the thickness from the side surface of the ceramic component body to the outside surface of the second external electrode is defined as B.
- the a/A ratio be about 10% to about 90% and the b/B ratio be about 10% to about 90%.
- the first external electrode is hardly formed at the side surface of the ceramic component body, and thus the side surface of the ceramic component body is hardly wrapped.
- the adhesion between the conductive resin forming the second external electrode and the ceramic component body is weak, the conductive resin may peel off during processing.
- the second external electrode enters between the end of the first external electrode and the side surface of the ceramic component body.
- a possibility decreases which the second external electrode peels off.
- moisture may come from the corner of the ceramic component body.
- the a/A ratio exceeds about 90%, the distance from the side surface of the ceramic component body at the end of the first external electrode is small. Thus, a stress caused by metal sintering shrinkage may be applied to the ceramic component body without being substantially absorbed.
- the thickness of the second external electrode covering the first external electrode is small at the side surface of the ceramic component body.
- a stress applied to the first external electrode due to bending of the wiring board to which the ceramic electronic component is attached may not be reduced by the second external electrode.
- the stress caused by the metal sintering shrinkage is absorbed at the end of the first external electrode apart from the ceramic component body and the stress caused by the bending of the wiring board to which the ceramic electronic component is attached is reduced by the second external electrode.
- a method for manufacturing a ceramic electronic sintering / firing component includes: preparing a ceramic component body having ceramic layers and internal electrode layers, in which the internal electrodes are led to two end surfaces; preparing a conductive paste containing conductive metal powder, glass frit having a softening point higher than a sintering starting temperature of the conductive metal powder, and an organic vehicle; immersing the two end surfaces of the ceramic component body in the conductive paste to supply the conductive paste to the two end surfaces and a part of the side surfaces extending therefrom of the ceramic component body; forming a first external electrode by heating at a temperature higher than the sintering starting temperature of the conductive metal powder and lower than the softening point of the glass frit to proceed sintering of the metal powder in a state where the end thereof is apart from the side surface of the ceramic component body, and then printing at a temperature higher than the softening point of the glass frit; and forming a second external electrode by supplying a conductive paste containing conductive metal powder, glass
- the conductive metal powder be Cu (Copper) containing P (Phosphorus)
- the glass frit is not softened to flow, the sintering of the metal powder progresses in a state where the ceramic and the first external electrode interface is not adhered to each other with glass, and then the first external electrode is formed by the stress caused by sintering shrinkage in such a manner that the end thereof is lifted off the side surface of the ceramic component body. Thereafter, sintering / firing is performed at a temperature higher than the softening point of the glass frit.
- the glass frit is softened to flow to form a metal sintered compact, i.e., the first external electrode, in a state where the ceramic component body and the first external electrode are brought into close contact with each other.
- the sintering starting temperature when P is blended in Cu powder, the sintering starting temperature can be reduced. When the content of P is adjusted, the sintering starting temperature can be adjusted.
- the stress caused by the sintering shrinkage of the first external electrode that is formed by sintering metal powder is hardly applied to the ceramic component body. Since the second external electrode containing a conductive resin is formed on the first external electrode, a stress transmitted from the wiring board to which the ceramic electronic component is attached is reduced by the second external electrode. Therefore, even when the wiring board to which the ceramic electronic component is attached bends, cracks are difficult to develop at the end of the first external electrode in the ceramic component body. Therefore, changes in the properties of the ceramic electronic component due to the bending of the wiring board can be prevented.
- a ceramic electronic component that is hardly influenced by the stress generated when the external electrode containing a metal sintered compact is formed at the end surface of the ceramic component body can be produced.
- Fig. 1 is a diagram illustrating the internal structure of a laminated ceramic capacitor as an example of a ceramic electronic component according to preferred embodiments of the invention.
- a laminated ceramic capacitor 10 contains a ceramic component body 12 having facing end surfaces and side surfaces connecting the end surfaces.
- the ceramic component body 12 contains layers of a plurality of internal electrodes 14 and ceramic layers 16.
- the plurality of internal electrodes 14 are overlapped with each other while facing with each other inside the ceramic component body 12 and are alternately led to the facing end surfaces.
- the ceramic component body 12 is formed by firing a chip obtained by forming an internal electrode pattern with a conductive paste on a ceramic green sheet formed with a dielectric ceramic material, laminating a plurality of ceramic green sheets, and cutting the laminate into the shape of each ceramic component body 12.
- the terminal electrode 18 contains a first external electrode 20 electrically connected to the internal electrodes 14. As shown in Fig. 2 , the first external electrode 20 is formed in such a manner as to wrap around from the end surface of the ceramic component body 12 to a part of the side surface. The first external electrode 20 is formed so that the end thereof is apart from the side surface of the ceramic component body 12.
- a conductive paste containing conductive metal powder, glass frit, and an organic vehicle is prepared.
- the conductive metal powder and the glass frit are selected so that the softening point of the glass frit is higher than the sintering starting temperature of the conductive metal powder.
- the conductive metal powder metal powder having a sintering starting temperature of about 500°C is used, for example.
- glass frit glass frit having a softening point of about 600°C is used, for example.
- the first electrode 20 is formed by heating the ceramic component body 12 to which the conductive paste has been supplied.
- a metal sintered compact formed by sintering of metal powder due to the action of glass frit that is softened to flow is formed in close contact with the ceramic component body 12 to reach the top thereof. This is because the softening point of the glass frit is lower than the sintering starting temperature of the metal powder.
- the first external electrode is formed so that the end thereof is lifted off at the time of the sintering shrinkage of the metal powder. Therefore, a stress generated at the time of the formation of the first external electrode 20 is hardly applied to the ceramic component body 12.
- the lifting length from the end of the first external electrode 20 is adjusted by the degree (high or low) of the softening point of the glass frit.
- the softening point of the glass frit is low, the softening of the glass frit is accelerated and a sintered metal is brought into close contact with the ceramic component body.
- the lifting degree in the longitudinal direction becomes low.
- the softening point of the glass frit is high, the softening of the glass frit is suppressed.
- the lifting degree in the longitudinal direction at the end of the sintered metal becomes high.
- the lifting height of the end of the first external electrode 20 is adjusted by the difference between the sintering starting temperature of the metal powder and the softening point of the glass frit and the content of the glass frit.
- the difference between the sintering starting temperature of the metal powder and the softening point of the glass frit is larger, the sintering of the metal powder progresses. Thus, the lifting in the height direction is likely to occur.
- a metal paste used for such a conductive paste Cu powder obtained by, for example, atomizing is used.
- the sintering starting temperature can be reduced by reducing the particle diameter of Cu powder or blending Cu powder in P.
- alkali metals, alkaline earth metals, transition metals, etc. are possibly added to B or Si as a network forming element.
- B-Si-Zn system glass frit or the like can be used.
- a second external electrode 22 containing a conductive resin is formed on the first external electrode 20, a second external electrode 22 containing a conductive resin is formed.
- the second external electrode 22 is formed by, for example, immersing the end surface of the ceramic component body 12 in a conductive resin containing an Ag filler, a thermosetting resin, such as an epoxy resin, and a solvent to supply the thermosetting resin to the first external electrode 20, and then thermally curing the same.
- the second external electrode 22 is formed entirely covering the first external electrode 20 and covering a part of the side surface of the ceramic component body 12.
- a first plating film 24 is formed with, for example, Ni.
- a second plating film 26 is further formed with, for example, Sn.
- the laminated ceramic capacitor 10 is soldered to, for example, a wiring board for use.
- a stress is applied to the laminated ceramic capacitor 10.
- the stress caused by the sintering shrinkage of the metal powder is concentrated on the end of the first external electrode (metal layer 5) at the time of the formation of the first external electrode (metal layer 5). Therefore, when the wiring board bends, and the stress caused by the bending is transmitted to the ceramic electronic component 1, cracks are likely to develop at the end of the first external electrode (metal layer 5) in the ceramic component body 2.
- the end of the first external electrode 20 is lifted off due to the stress caused by the sintering shrinkage of the metal powder at the time of the formation of the first external electrode 20 to be apart from the side surface of the ceramic component body 12. Therefore, the stress caused by the sintering shrinkage of the metal powder is hardly applied to the ceramic component body 12. Even when the stress caused by the bending of the wiring board is applied, cracks are difficult to develop in the ceramic component body 12.
- the first external electrode 20 is covered with the second external electrode 22 containing a conductive resin.
- the stress caused by bending of the wiring board is reduced by the second external electrode 22, whereby the stress applied to the ceramic component body 12 decreases. Therefore, cracks are more difficult to develop in the ceramic component body 12.
- the length of the first external electrode 20 in contact with the side surface of the ceramic component body 12 is defined as a
- the distance from the end surface of the ceramic component body 12 to the end of the first external electrode 20 at the side surface of the ceramic component body 12 is defined as A
- the thickness from the side surface of the ceramic component body 12 to the outside surface of first external electrode 20 is defined as b
- the thickness from the side surface of the ceramic component body 12 to the outside surface of the second external electrode 22 is defined as B.
- the a/A ratio be about 10% to about 90% and the b/B ratio be about 10% to about 90%.
- the first external electrode 20 is hardly formed at the side surface of the ceramic component body 12, and thus the side surface of the ceramic component body 12 is hardly wrapped.
- the adhesion between the conductive resin forming the second external electrode 22 and the ceramic component body 12 is weak, the conductive resin may peel off during processing.
- the second external electrode 22 enters between the end of the first external electrode 20 and the side surface of the ceramic component body 12. Thus, a possibility that the second external electrode 22 peels off decreases. However, since the proportion of the first external electrode 20 in contact with the side surface of the ceramic component body 12 is low, moisture may come from the corner of the ceramic component body 12.
- the distance from the side surface of the ceramic component body 12 at the end of the first external electrode 20 is small.
- a stress caused by metal sintering shrinkage may be applied to the ceramic component body 12 without being substantially absorbed.
- the thickness of the second external electrode 22 covering the first external electrode 20 is small at the side surface of the ceramic component body 12.
- a stress applied to the first external electrode 20 due to bending of the wiring board to which the ceramic capacitor 10 is attached may not be reduced by the second external electrode 22.
- the stress caused by the metal sintering shrinkage is absorbed at the end of the first external electrode 20 apart from the ceramic component body 12 and the stress caused by the bending of the wiring board to which the ceramic capacitor 10 is attached is reduced by the second external electrode 22.
- the description is given to the laminated ceramic capacitor 10.
- the invention can be applied to a ceramic electronic component having the ceramic component body 12 and the terminal electrode 18 formed at the end surface of the ceramic component body 12 and can be applied to, for example, a chip resistor or a chip inductor.
- an about 1.0 mm x 0.5 mm x 0.5 mm fired ceramic chip and an about 3.2 mm x 2.5 mm x 2.5 mm fired ceramic chip were prepared as the ceramic component body 12.
- the ceramic chip internal electrode layers and ceramic layers are alternately laminated, and each of the internal electrodes is led to the facing end surface.
- a metal electrode as the first external electrode 20 was formed on the ceramic chip.
- a conductive paste in which Cu powder, glass frit, acryl, varnish, and a solvent were mixed and dispersed with a three-roll mill, was prepared.
- the end surface of the ceramic chip was immersed in the conductive paste, and fired to form a metal electrode.
- the firing was performed using a temperature profile in which the ceramic chip to which the conductive paste was applied was held at the maximum temperature of about 870°C for about 5 minutes in a belt furnace.
- Cu powder having a sintering starting temperature lower than the softening point of the glass frit was used as the Cu powder used for the conductive paste. Then, heat treatment was performed at a temperature equal to or higher than the sintering starting temperature of the Cu powder and lower than the softening point of the glass frit, and then the metal electrode was formed using the temperature profile of holding at the maximum temperature of about 870°C for about 5 minutes.
- a resin electrode as a second external electrode 22 was further formed.
- a conductive resin paste in which an Ag filler, an epoxy resin, and a solvent were mixed and dispersed with a three roll mill, was prepared.
- the end surface of the ceramic chip on which the metal electrode was formed was immersed in the conductive resin paste, so that the conductive resin paste was applied in such a manner as to entirely cover the metal electrode.
- the ceramic chip to which the conductive resin paste was applied was heated in an about 200°C oven for about 2 hours to cure the resin to form the resin electrode.
- an Ni plating layer and Sn plating layer were formed in the stated order, thereby manufacturing a laminated ceramic capacitor.
- the obtained laminated ceramic capacitor was attached to a glass epoxy testing board.
- a lead free solder paste was printed to the testing board, and the laminated ceramic capacitor was disposed thereon.
- the testing board on which the laminated ceramic capacitor was disposed was made to pass through a reflow furnace having a maximum temperature of about 240°C for mounting the laminated ceramic capacitor on the testing board.
- the testing board was disposed on a measuring machine so that the laminated ceramic capacitor faced down.
- both the ends of the testing board were supported, and then the center thereof was pressed for bending the portion at which the laminated ceramic capacitor was mounted by about 5 mm relative to the testing board upper part. Then, the state was held for about 5 seconds as it was.
- the electrostatic capacities were compared before and after bending the testing board. Then, the testing board in which the capacity decreased by about 10% or more was judged to be poor. The resin electrode was checked for omission. Then, the resin electrode having omission was judged to be poor. A moisture resistance test in which the resin electrode was allowed to stand for about 1000 hours in a wet atmosphere in which the temperature was about 70°C and the humidity was about 95%. Then, the resin electrode that suffered from deterioration of insulation resistance was judged to be poor.
- the b/B ratio is 100%, and, as shown in Fig. 7 , the maximum thickness of the lifted metal electrode is the same as the thickness of the resin electrode therearound at the side surface of the ceramic chip, and the most lifted portion of the metal electrode is exposed.
- the stress caused by bending of the testing board is not reduced by the resin electrode, the stress is concentrated on the end of the metal electrode to develop cracks in the ceramic chip, and the defective degree of reduction in electrostatic capacity increases.
- the resin electrode entered between the lifted metal electrode and the ceramic chip, and the defective degree of resin electrode omission was low.
- the b/B ratio is about 5% as in the samples Nos. 2, 10, 17, 31, and 34, the thickness of the metal electrode is small. Therefore, the amount of the resin electrode entering between the metal electrode and the ceramic chip was small and the defective degree of resin electrode omission slightly increased.
- the defective degree in the moisture resistance test was slightly high.
- the a/A ratio is about 5% as in the samples Nos. 10 to 16
- the defective degree in the moisture resistance slight increased, although the corner periphery of the ceramic chip is covered with the metal electrode.
- the sample No. 37 is a former laminated ceramic capacitor in which the end of the metal electrode is not lifted off as shown in Fig. 8 .
- the stress generated at the time of the sintering shrinkage of the metal powder was concentrated on the end of the metal electrode, the stress caused by bending of the testing board was applied to develop cracks in the ceramic chip, and the defective degree of reduction in electrostatic capacity increased. Since the resin electrode did not enter between the metal electrode and the ceramic chip, the defective degree of resin electrode omission slightly increased.
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- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Capacitors (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008237660A JP5211970B2 (ja) | 2008-09-17 | 2008-09-17 | セラミック電子部品の製造方法 |
Publications (2)
Publication Number | Publication Date |
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EP2166548A1 EP2166548A1 (en) | 2010-03-24 |
EP2166548B1 true EP2166548B1 (en) | 2017-01-18 |
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ID=41328470
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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EP09011235.0A Active EP2166548B1 (en) | 2008-09-17 | 2009-09-01 | External electrodes for ceramic electronic component and method for manufacturing the same |
Country Status (4)
Country | Link |
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US (1) | US8102641B2 (ko) |
EP (1) | EP2166548B1 (ko) |
JP (1) | JP5211970B2 (ko) |
KR (1) | KR101074227B1 (ko) |
Families Citing this family (33)
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WO2011071143A1 (ja) * | 2009-12-11 | 2011-06-16 | 株式会社村田製作所 | 積層型セラミック電子部品 |
JP5246207B2 (ja) * | 2010-06-04 | 2013-07-24 | 株式会社村田製作所 | チップ型電子部品 |
JP5699819B2 (ja) * | 2010-07-21 | 2015-04-15 | 株式会社村田製作所 | セラミック電子部品 |
JP2012059742A (ja) * | 2010-09-06 | 2012-03-22 | Murata Mfg Co Ltd | 積層セラミックコンデンサ |
KR101228752B1 (ko) * | 2011-11-04 | 2013-01-31 | 삼성전기주식회사 | 적층 세라믹 전자 부품 및 그 제조 방법 |
DE102011056515B4 (de) * | 2011-12-16 | 2023-12-07 | Tdk Electronics Ag | Elektrisches Bauelement und Verfahren zur Herstellung eines elektrischen Bauelements |
KR101245347B1 (ko) * | 2011-12-29 | 2013-03-25 | 삼화콘덴서공업주식회사 | 적층 세라믹 커패시터 |
CN104246930B (zh) * | 2012-03-19 | 2018-04-06 | 株式会社村田制作所 | 陶瓷电子部件 |
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US9209507B1 (en) * | 2013-06-14 | 2015-12-08 | Triquint Semiconductor, Inc. | Monolithic wideband high power termination element |
KR101434108B1 (ko) | 2013-07-22 | 2014-08-25 | 삼성전기주식회사 | 적층 세라믹 커패시터 및 그 실장 기판과 제조 방법 |
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US20170044416A1 (en) * | 2015-08-10 | 2017-02-16 | Delavan Inc | Particulates for additive manufacturing techniques |
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JP7089404B2 (ja) * | 2018-05-22 | 2022-06-22 | 太陽誘電株式会社 | セラミック電子部品およびその製造方法 |
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JP2022067931A (ja) * | 2020-10-21 | 2022-05-09 | Tdk株式会社 | 電子部品 |
KR20220059824A (ko) | 2020-11-03 | 2022-05-10 | 삼성전기주식회사 | 적층형 전자 부품 |
WO2024142606A1 (ja) * | 2022-12-28 | 2024-07-04 | 株式会社村田製作所 | 積層セラミック電子部品 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10284343A (ja) * | 1997-04-11 | 1998-10-23 | Mitsubishi Materials Corp | チップ型電子部品 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2867748B2 (ja) * | 1991-06-25 | 1999-03-10 | 三菱マテリアル株式会社 | チップ型積層セラミックスコンデンサ |
JP2967660B2 (ja) * | 1992-11-19 | 1999-10-25 | 株式会社村田製作所 | 電子部品 |
JP3397107B2 (ja) * | 1997-11-26 | 2003-04-14 | 松下電器産業株式会社 | セラミック電子部品 |
JP2000277371A (ja) * | 1999-03-29 | 2000-10-06 | Taiyo Yuden Co Ltd | 積層セラミック電子部品 |
JP2001015371A (ja) * | 1999-06-29 | 2001-01-19 | Murata Mfg Co Ltd | チップ型セラミック電子部品及びその製造方法 |
JP3376970B2 (ja) | 1999-09-08 | 2003-02-17 | 株式会社村田製作所 | セラミック電子部品 |
JP3376971B2 (ja) * | 1999-09-09 | 2003-02-17 | 株式会社村田製作所 | セラミック電子部品 |
JP3460683B2 (ja) * | 2000-07-21 | 2003-10-27 | 株式会社村田製作所 | チップ型電子部品及びその製造方法 |
US6627509B2 (en) * | 2001-11-26 | 2003-09-30 | Delaware Capital Formation, Inc. | Surface flashover resistant capacitors and method for producing same |
JP2003318059A (ja) * | 2002-04-25 | 2003-11-07 | Kyocera Corp | 積層セラミックコンデンサ |
JP4051298B2 (ja) * | 2003-01-29 | 2008-02-20 | 京セラ株式会社 | セラミック電子部品 |
JP4158713B2 (ja) * | 2004-02-03 | 2008-10-01 | 住友金属鉱山株式会社 | 外部電極用銅ペースト組成物 |
JP4574246B2 (ja) * | 2004-06-28 | 2010-11-04 | 京セラ株式会社 | チップ型電子部品およびその製法 |
WO2006003755A1 (ja) * | 2004-07-06 | 2006-01-12 | Murata Manufacturing.Co., Ltd. | 導電性ペースト及びそれを用いたセラミック電子部品 |
US7808770B2 (en) * | 2007-06-27 | 2010-10-05 | Murata Manufacturing Co., Ltd. | Monolithic ceramic capacitor |
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---|---|---|---|---|
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US8102641B2 (en) | 2012-01-24 |
JP5211970B2 (ja) | 2013-06-12 |
KR101074227B1 (ko) | 2011-10-14 |
US20100067170A1 (en) | 2010-03-18 |
EP2166548A1 (en) | 2010-03-24 |
JP2010073780A (ja) | 2010-04-02 |
KR20100032341A (ko) | 2010-03-25 |
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