EP1416541A3 - Couche d'électrode en oxyde transparent et son procédé de fabrication, matière de base transparente électroconductive, cellule solaire et élément photodétecteur - Google Patents
Couche d'électrode en oxyde transparent et son procédé de fabrication, matière de base transparente électroconductive, cellule solaire et élément photodétecteur Download PDFInfo
- Publication number
- EP1416541A3 EP1416541A3 EP03256274A EP03256274A EP1416541A3 EP 1416541 A3 EP1416541 A3 EP 1416541A3 EP 03256274 A EP03256274 A EP 03256274A EP 03256274 A EP03256274 A EP 03256274A EP 1416541 A3 EP1416541 A3 EP 1416541A3
- Authority
- EP
- European Patent Office
- Prior art keywords
- electrode film
- transparent
- oxide electrode
- manufacturing
- base material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000001514 detection method Methods 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical group [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract 2
- 229910052738 indium Inorganic materials 0.000 abstract 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract 2
- 229910003437 indium oxide Inorganic materials 0.000 abstract 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052719 titanium Inorganic materials 0.000 abstract 2
- 239000010936 titanium Substances 0.000 abstract 2
- 238000002834 transmittance Methods 0.000 abstract 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
- C03C17/23—Oxides
- C03C17/245—Oxides by deposition from the vapour phase
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/3411—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials
- C03C17/3429—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials at least one of the coatings being a non-oxide coating
- C03C17/3464—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials at least one of the coatings being a non-oxide coating comprising a chalcogenide
- C03C17/3476—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials at least one of the coatings being a non-oxide coating comprising a chalcogenide comprising a selenide or telluride
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0682—Silicides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
- H01B1/08—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances oxides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
- H01L31/022475—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of indium tin oxide [ITO]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
- H01L31/022483—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of zinc oxide [ZnO]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/20—Materials for coating a single layer on glass
- C03C2217/21—Oxides
- C03C2217/216—ZnO
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
- C04B2235/3232—Titanium oxides or titanates, e.g. rutile or anatase
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
- C04B2235/3258—Tungsten oxides, tungstates, or oxide-forming salts thereof
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3286—Gallium oxides, gallates, indium oxides, indates, thallium oxides, thallates or oxide forming salts thereof, e.g. zinc gallate
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/658—Atmosphere during thermal treatment
- C04B2235/6583—Oxygen containing atmosphere, e.g. with changing oxygen pressures
- C04B2235/6584—Oxygen containing atmosphere, e.g. with changing oxygen pressures at an oxygen percentage below that of air
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/96—Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/96—Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
- C04B2235/9646—Optical properties
- C04B2235/9653—Translucent or transparent ceramics other than alumina
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Ceramic Engineering (AREA)
- Geochemistry & Mineralogy (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Structural Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Non-Insulated Conductors (AREA)
- Physical Vapour Deposition (AREA)
- Photovoltaic Devices (AREA)
- Manufacturing Of Electric Cables (AREA)
- Light Receiving Elements (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP08011842.5A EP1981089B1 (fr) | 2002-10-04 | 2003-10-03 | Film d'électrode transparent à base d'un oxide d'indium avec un mélange de titane et de tungstène et son procédé de fabrication |
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002292434 | 2002-10-04 | ||
JP2002292434 | 2002-10-04 | ||
JP2002359975 | 2002-12-11 | ||
JP2002359975 | 2002-12-11 | ||
JP2003324825A JP4556407B2 (ja) | 2002-10-04 | 2003-09-17 | 酸化物透明電極膜とその製造方法、透明導電性基材、太陽電池および光検出素子 |
JP2003324825 | 2003-09-17 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP08011842.5A Division EP1981089B1 (fr) | 2002-10-04 | 2003-10-03 | Film d'électrode transparent à base d'un oxide d'indium avec un mélange de titane et de tungstène et son procédé de fabrication |
Publications (3)
Publication Number | Publication Date |
---|---|
EP1416541A2 EP1416541A2 (fr) | 2004-05-06 |
EP1416541A3 true EP1416541A3 (fr) | 2006-05-03 |
EP1416541B1 EP1416541B1 (fr) | 2009-03-25 |
Family
ID=32096699
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP03256274A Expired - Lifetime EP1416541B1 (fr) | 2002-10-04 | 2003-10-03 | Procédé de fabrication d'une couche d'électrode en oxyde transparent |
EP08011842.5A Expired - Lifetime EP1981089B1 (fr) | 2002-10-04 | 2003-10-03 | Film d'électrode transparent à base d'un oxide d'indium avec un mélange de titane et de tungstène et son procédé de fabrication |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP08011842.5A Expired - Lifetime EP1981089B1 (fr) | 2002-10-04 | 2003-10-03 | Film d'électrode transparent à base d'un oxide d'indium avec un mélange de titane et de tungstène et son procédé de fabrication |
Country Status (5)
Country | Link |
---|---|
US (2) | US7507357B2 (fr) |
EP (2) | EP1416541B1 (fr) |
JP (1) | JP4556407B2 (fr) |
AU (1) | AU2003252783B2 (fr) |
DE (1) | DE60326802D1 (fr) |
Families Citing this family (45)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20070036058A (ko) | 2004-06-30 | 2007-04-02 | 스미토모 긴조쿠 고잔 가부시키가이샤 | 도파로형 광제어 소자와 그 제조방법 |
BRPI0517568B8 (pt) * | 2004-11-10 | 2022-03-03 | Canon Kk | Transistor de efeito de campo |
KR100495925B1 (ko) * | 2005-01-12 | 2005-06-17 | (주)인솔라텍 | 태양전지용 광흡수층 및 그 제조 방법 |
CN100374832C (zh) * | 2005-05-20 | 2008-03-12 | 中国科学院上海技术物理研究所 | 室温铁电薄膜红外焦平面探测器的吸收层及制备方法 |
JP4872585B2 (ja) * | 2005-12-06 | 2012-02-08 | 旭硝子株式会社 | レーザーパターニング用透明導電膜付き基板およびその製造方法 |
JP4816116B2 (ja) * | 2006-02-08 | 2011-11-16 | 住友金属鉱山株式会社 | スパッタリングターゲット用酸化物焼結体および、それを用いて得られる酸化物膜、それを含む透明基材 |
US7582161B2 (en) | 2006-04-07 | 2009-09-01 | Micron Technology, Inc. | Atomic layer deposited titanium-doped indium oxide films |
BRPI0712316A2 (pt) * | 2006-06-05 | 2012-01-24 | Pilkington Group Ltd | artigo de vidro revestido, unidade de vidro isolado, e método para formar um artigo de vidro revestido |
US8158262B2 (en) * | 2006-06-05 | 2012-04-17 | Pilkington Group Limited | Glass article having a zinc oxide coating and method for making same |
JP2008107587A (ja) * | 2006-10-26 | 2008-05-08 | Sumitomo Metal Mining Co Ltd | エレクトロクロミック素子及びその製造方法 |
US8158974B2 (en) | 2007-03-23 | 2012-04-17 | Idemitsu Kosan Co., Ltd. | Semiconductor device, polycrystalline semiconductor thin film, process for producing polycrystalline semiconductor thin film, field effect transistor, and process for producing field effect transistor |
JP5229919B2 (ja) * | 2007-05-23 | 2013-07-03 | 独立行政法人産業技術総合研究所 | 酸化物透明導電膜を用いた光電変換素子及び光検出素子 |
US20080311392A1 (en) * | 2007-06-12 | 2008-12-18 | Ming Scientific, Llc | Thermal barrier |
US20090014065A1 (en) * | 2007-07-12 | 2009-01-15 | Applied Materials, Inc. | Method for the production of a transparent conductive oxide coating |
JP5093503B2 (ja) * | 2008-07-28 | 2012-12-12 | 住友金属鉱山株式会社 | 薄膜太陽電池及び薄膜太陽電池用表面電極 |
JP5056651B2 (ja) * | 2008-07-28 | 2012-10-24 | 住友金属鉱山株式会社 | 薄膜太陽電池及び薄膜太陽電池用表面電極 |
JP5093502B2 (ja) * | 2008-07-28 | 2012-12-12 | 住友金属鉱山株式会社 | 薄膜太陽電池及び薄膜太陽電池用表面電極 |
JP2010056541A (ja) * | 2008-07-31 | 2010-03-11 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
US7875948B2 (en) * | 2008-10-21 | 2011-01-25 | Jaroslav Hynecek | Backside illuminated image sensor |
JP5257372B2 (ja) * | 2009-11-30 | 2013-08-07 | 住友金属鉱山株式会社 | 酸化物蒸着材と透明導電膜および太陽電池 |
US20110220198A1 (en) * | 2010-03-31 | 2011-09-15 | Stion Corporation | Method and Device Utilizing Strained AZO Layer and Interfacial Fermi Level Pinning in Bifacial Thin Film PV Cells |
JP5541980B2 (ja) * | 2010-06-24 | 2014-07-09 | 株式会社カネカ | 結晶シリコン系太陽電池およびその製造方法 |
JP5505642B2 (ja) * | 2010-07-29 | 2014-05-28 | 住友金属鉱山株式会社 | 酸化物蒸着材 |
KR20120044779A (ko) * | 2010-10-28 | 2012-05-08 | 삼성전자주식회사 | 태양 전지 및 태양 전지의 제조 방법 |
MX340019B (es) | 2010-11-23 | 2016-06-22 | Pantheryx Inc | Composiciones y metodos para el tratamiento en aplicaciones clinicas de amplio espectro, no diferenciadas o combinadas. |
KR101908492B1 (ko) | 2011-04-12 | 2018-10-17 | 엘지디스플레이 주식회사 | 터치 패널 일체형 표시 장치 |
JPWO2012165289A1 (ja) * | 2011-06-03 | 2015-02-23 | 三洋電機株式会社 | 太陽電池の製造方法 |
US9412623B2 (en) * | 2011-06-08 | 2016-08-09 | Cbrite Inc. | Metal oxide TFT with improved source/drain contacts and reliability |
US8679905B2 (en) * | 2011-06-08 | 2014-03-25 | Cbrite Inc. | Metal oxide TFT with improved source/drain contacts |
US20130019929A1 (en) * | 2011-07-19 | 2013-01-24 | International Business Machines | Reduction of light induced degradation by minimizing band offset |
JP2013037768A (ja) * | 2011-08-03 | 2013-02-21 | Kanazawa Inst Of Technology | 透明導電膜の製造方法 |
US9099578B2 (en) | 2012-06-04 | 2015-08-04 | Nusola, Inc. | Structure for creating ohmic contact in semiconductor devices and methods for manufacture |
WO2013152054A1 (fr) * | 2012-04-02 | 2013-10-10 | Nusola Inc. | Cellule photovoltaïque et procédé de fabrication |
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JP6159490B1 (ja) * | 2015-09-30 | 2017-07-05 | 積水化学工業株式会社 | 光透過性導電フィルム、及び、アニール処理された光透過性導電フィルムの製造方法 |
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TWI694748B (zh) * | 2019-08-28 | 2020-05-21 | 明志科技大學 | 用以產生大面積電漿之電極元件 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59204625A (ja) * | 1983-05-06 | 1984-11-20 | Daicel Chem Ind Ltd | 透明導電性フイルムの製造方法 |
EP0686982A1 (fr) * | 1994-06-10 | 1995-12-13 | Hoya Corporation | Oxydes électro-conducteurs et électrodes les utilisant |
DE19654717A1 (de) * | 1995-12-30 | 1997-07-03 | Samsung Display Devices Co Ltd | ZnO-Dünnfilmelektrodenstruktur, welche eine mit Sauerstoff dicht gepackte Polykristalloxiddünnfilmschicht verwendet, und deren Herstellungsverfahren |
EP0793277A2 (fr) * | 1996-02-27 | 1997-09-03 | Canon Kabushiki Kaisha | Dispositif photovoltaique comportant un substrat opaque avec une structure de surface spécifique irrégulière |
EP1174390A1 (fr) * | 1999-04-30 | 2002-01-23 | Japan Science and Technology Corporation | Compose avec dopant introduit dans un point de grille vacant, avec regulation de la position et de la concentration |
US20030218153A1 (en) * | 2002-03-27 | 2003-11-27 | Sumitomo Metal Mining Co., Ltd. | Transparent conductive thin film, process for producing the same, sintered target for producing the same, and transparent, electroconductive substrate for display panel, and organic electroluminescence device |
JP2004043851A (ja) * | 2002-07-09 | 2004-02-12 | Sumitomo Metal Mining Co Ltd | 酸化物透明導電膜及びその製法 |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3324647A1 (de) * | 1983-07-08 | 1985-01-17 | Schott Glaswerke, 6500 Mainz | Tauchverfahren zur herstellung transparenter, elektrisch leitfaehiger, dotierter indiumoxidschichten |
JPH02309511A (ja) * | 1989-05-24 | 1990-12-25 | Showa Denko Kk | 透明導電膜 |
JPH04277408A (ja) * | 1991-03-01 | 1992-10-02 | Kojundo Chem Lab Co Ltd | 透明電極 |
JP2624410B2 (ja) | 1991-10-04 | 1997-06-25 | 日本電信電話株式会社 | 赤外光検出素子および赤外光検出器 |
JP3130993B2 (ja) | 1992-02-03 | 2001-01-31 | 松下電器産業株式会社 | 太陽電池 |
JP3349194B2 (ja) | 1993-06-10 | 2002-11-20 | 帝人株式会社 | 透明導電性積層体 |
JP3827334B2 (ja) | 1993-08-11 | 2006-09-27 | 東ソー株式会社 | Ito焼結体及びスパッタリングターゲット |
JP3444655B2 (ja) * | 1994-06-14 | 2003-09-08 | 三井金属鉱業株式会社 | 複合導電性粉末及び導電膜 |
JPH0843840A (ja) * | 1994-07-27 | 1996-02-16 | Toppan Printing Co Ltd | 表示装置用電極板 |
JP3746094B2 (ja) * | 1995-06-28 | 2006-02-15 | 出光興産株式会社 | ターゲットおよびその製造方法 |
JP3444700B2 (ja) | 1995-08-17 | 2003-09-08 | 松下電器産業株式会社 | 太陽電池 |
JP3943617B2 (ja) | 1995-12-07 | 2007-07-11 | 出光興産株式会社 | 透明導電積層体およびこれを用いたタッチパネル |
JPH09199741A (ja) * | 1996-01-16 | 1997-07-31 | Matsushita Electric Ind Co Ltd | 薄膜太陽電池 |
JP3803132B2 (ja) | 1996-01-31 | 2006-08-02 | 出光興産株式会社 | ターゲットおよびその製造方法 |
JPH09282945A (ja) * | 1996-04-16 | 1997-10-31 | Idemitsu Kosan Co Ltd | 透明導電膜およびその製造方法 |
JPH10199741A (ja) | 1997-01-10 | 1998-07-31 | Sanken Electric Co Ltd | コイル装置の組立方法 |
JP3311286B2 (ja) | 1997-11-06 | 2002-08-05 | 昭和シェル石油株式会社 | 薄膜太陽電池の製造方法 |
JP3769921B2 (ja) | 1998-01-29 | 2006-04-26 | 富士ゼロックス株式会社 | 半導体受光素子とその製造方法、およびそれを用いた光センサ |
JP2001127336A (ja) | 1999-10-27 | 2001-05-11 | Natl Science Council Of Roc | 高利得の吸収/増倍分離式の電子なだれフォトダイオード |
JP3911957B2 (ja) * | 2000-04-25 | 2007-05-09 | 松下電工株式会社 | 高感度赤外線検出素子およびその製造方法 |
JP2002050231A (ja) * | 2000-08-04 | 2002-02-15 | Geomatec Co Ltd | 透明導電膜およびその製造方法並びにその用途 |
JP4140805B2 (ja) | 2000-12-28 | 2008-08-27 | 株式会社スギノマシン | 手動ツール交換機能付きマシニングセンタ |
US7141186B2 (en) * | 2002-10-29 | 2006-11-28 | Sumitomo Metal Mining Co., Ltd. | Oxide sintered body and sputtering target, and manufacturing method for transparent conductive oxide film as electrode |
JP2006193363A (ja) * | 2005-01-12 | 2006-07-27 | Sumitomo Metal Mining Co Ltd | 酸化物焼結体、スパッタリングターゲットおよび透明導電性薄膜 |
-
2003
- 2003-09-17 JP JP2003324825A patent/JP4556407B2/ja not_active Expired - Fee Related
- 2003-10-02 US US10/677,849 patent/US7507357B2/en active Active
- 2003-10-03 EP EP03256274A patent/EP1416541B1/fr not_active Expired - Lifetime
- 2003-10-03 EP EP08011842.5A patent/EP1981089B1/fr not_active Expired - Lifetime
- 2003-10-03 DE DE60326802T patent/DE60326802D1/de not_active Expired - Lifetime
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-
2008
- 2008-12-30 US US12/345,934 patent/US7575698B2/en not_active Expired - Lifetime
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59204625A (ja) * | 1983-05-06 | 1984-11-20 | Daicel Chem Ind Ltd | 透明導電性フイルムの製造方法 |
EP0686982A1 (fr) * | 1994-06-10 | 1995-12-13 | Hoya Corporation | Oxydes électro-conducteurs et électrodes les utilisant |
DE19654717A1 (de) * | 1995-12-30 | 1997-07-03 | Samsung Display Devices Co Ltd | ZnO-Dünnfilmelektrodenstruktur, welche eine mit Sauerstoff dicht gepackte Polykristalloxiddünnfilmschicht verwendet, und deren Herstellungsverfahren |
EP0793277A2 (fr) * | 1996-02-27 | 1997-09-03 | Canon Kabushiki Kaisha | Dispositif photovoltaique comportant un substrat opaque avec une structure de surface spécifique irrégulière |
EP1174390A1 (fr) * | 1999-04-30 | 2002-01-23 | Japan Science and Technology Corporation | Compose avec dopant introduit dans un point de grille vacant, avec regulation de la position et de la concentration |
US20030218153A1 (en) * | 2002-03-27 | 2003-11-27 | Sumitomo Metal Mining Co., Ltd. | Transparent conductive thin film, process for producing the same, sintered target for producing the same, and transparent, electroconductive substrate for display panel, and organic electroluminescence device |
JP2004043851A (ja) * | 2002-07-09 | 2004-02-12 | Sumitomo Metal Mining Co Ltd | 酸化物透明導電膜及びその製法 |
Non-Patent Citations (9)
Title |
---|
CAMPET G ET AL: "THE ELECTRONIC EFFECT OF TI4+, ZR4+ AND GE4+ DOPINGS UPON THE PHYSICAL PROPERTIES OF IN2O3 AND SN-DOPED IN2O3 CERAMICS: APPLICATION TO NEW HIGHLY-TRANSPARENT CONDUCTIVE ELECTRODES", MATERIALS SCIENCE AND ENGINEERING B, ELSEVIER SEQUOIA, LAUSANNE, CH, vol. B19, no. 3, 20 June 1993 (1993-06-20), pages 285 - 289, XP000381050, ISSN: 0921-5107 * |
CHOPRA K L ET AL: "TRANSPARENT CONDUCTORS A STATUS REVIEW", THIN SOLID FILMS, ELSEVIER-SEQUOIA S.A. LAUSANNE, CH, vol. 102, January 1983 (1983-01-01), pages 1 - 46, XP000573894, ISSN: 0040-6090 * |
DELAHOY A ET AL: "Transparent and semitransparent conducting film deposition by reactive-environment, hollow cathode sputtering", JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY A. VACUUM, SURFACES AND FILMS, AMERICAN INSTITUTE OF PHYSICS, NEW YORK, NY, US, vol. 23, no. 4, 28 June 2005 (2005-06-28), pages 1215 - 1220, XP012074042, ISSN: 0734-2101 * |
GROTH R: "Investigation of semiconductor indium oxide films", PHYSICA STATUS SOLIDI GERMANY, vol. 14, no. 1, 1966, pages 69 - 75, XP008061030 * |
HUSEYNOV E ET AL: "IR-detectors based on In2O3-anode oxide-CdxHg1-xTe", INTERNATIONAL JOURNAL OF INFRARED AND MILLIMETER WAVES PLENUM USA, vol. 23, no. 9, September 2002 (2002-09-01), pages 1337 - 1345, XP002371020, ISSN: 0195-9271 * |
PATENT ABSTRACTS OF JAPAN vol. 009, no. 071 (C - 272) 30 March 1985 (1985-03-30) * |
PATENT ABSTRACTS OF JAPAN vol. 2003, no. 12 5 December 2003 (2003-12-05) * |
SAFI ET AL: "The properties of reactively-sputtered, stoichiometry-controlled and optimum-conductivity transparent indium oxide films as a function of their titanium, aluminium and zinc content; comparisons with the use of tin as a dopant", THIN SOLID FILMS, ELSEVIER-SEQUOIA S.A. LAUSANNE, CH, vol. 343-344, April 1999 (1999-04-01), pages 115 - 118, XP005020892, ISSN: 0040-6090 * |
SUTHERLAND F L ET AL: "PREPARATION AND PROPERTIES OF TRANSPARENT CONDUCTING FILMS OF ZNO AND IN2O3", CHEMTRONICS, BUTTERWORTH SCIENTIFIC LTD. GUILDFORD, GB, vol. 3, no. 3, 1 September 1988 (1988-09-01), pages 172 - 175, XP000069988 * |
Also Published As
Publication number | Publication date |
---|---|
US7575698B2 (en) | 2009-08-18 |
JP2004207221A (ja) | 2004-07-22 |
AU2003252783B2 (en) | 2005-12-01 |
EP1981089A3 (fr) | 2008-10-22 |
EP1416541A2 (fr) | 2004-05-06 |
US7507357B2 (en) | 2009-03-24 |
AU2003252783A1 (en) | 2004-04-22 |
US20040137280A1 (en) | 2004-07-15 |
EP1981089B1 (fr) | 2014-03-26 |
DE60326802D1 (de) | 2009-05-07 |
EP1416541B1 (fr) | 2009-03-25 |
EP1981089A2 (fr) | 2008-10-15 |
US20090127519A1 (en) | 2009-05-21 |
JP4556407B2 (ja) | 2010-10-06 |
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