EP1360718A2 - Integrierte schaltungsanordnung aus einem flächigen substrat - Google Patents

Integrierte schaltungsanordnung aus einem flächigen substrat

Info

Publication number
EP1360718A2
EP1360718A2 EP02703497A EP02703497A EP1360718A2 EP 1360718 A2 EP1360718 A2 EP 1360718A2 EP 02703497 A EP02703497 A EP 02703497A EP 02703497 A EP02703497 A EP 02703497A EP 1360718 A2 EP1360718 A2 EP 1360718A2
Authority
EP
European Patent Office
Prior art keywords
substrate
integrated circuit
circuit arrangement
carrier
flat substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP02703497A
Other languages
German (de)
English (en)
French (fr)
Inventor
Marcus Janke
Peter Laackmann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Original Assignee
Infineon Technologies AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG
Publication of EP1360718A2 publication Critical patent/EP1360718A2/de
Withdrawn legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00Arrangements for protection of devices
    • H10W42/40Arrangements for protection of devices protecting against tampering, e.g. unauthorised inspection or reverse engineering
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117Shapes of semiconductor bodies
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68Shapes or dispositions thereof

Definitions

  • Integrated circuit arrangement made of a flat substrate
  • the invention relates to an integrated circuit arrangement made of a flat substrate.
  • the substrate is brought from the flat shape into a non-planar shape by the carrier at least in one direction of propagation, it cannot be machined by means of grinding processes with reasonable effort such that the surface can be removed in layers in a completely analyzable manner.
  • the desired deformation can also be generated by mechanical stresses that arise in the substrate itself, for example by changing the chemical or physical structure of the substrate. For example, implantation processes, diffusion processes or thermal processes can be used for this. With suitable technology, soldering and connection methods, for example between a plurality of substrates which are arranged one above the other, can also be used to specifically generate mechanical stresses in the substrate.
  • a deformed substrate usually retains its deformed shape after some time.
  • partial areas can also be removed at least on one surface.
  • FIG. 1 shows the basic structure of an integrated circuit arrangement on a semiconductor chip
  • FIG. 2 shows a first exemplary embodiment of an integrated circuit arrangement according to the invention on a semiconductor chip
  • FIG. 3 shows the surface in a modification of the first exemplary embodiment
  • FIG. 4 shows a second exemplary embodiment according to the invention
  • FIG. 5 shows a modification of the second exemplary embodiment
  • FIG. 6 shows a second modification of the second exemplary embodiment
  • Figure 7 shows a possible surface design.
  • FIG. 1 the basic structure of an integrated circuit arrangement is shown.
  • An integrated circuit is built up in a known manner on a substrate 1 in several layers, which are shown here as layers 2 and 3 as a minimal solution.
  • layers 2 and 3 are shown here as layers 2 and 3 as a minimal solution.
  • Well over two shifts are currently common.
  • At least the invention can only be meaningfully applied from two layers, since only then is there a layer that can be removed in order to analyze the layer underneath.
  • FIG. 2 it is shown that on the side used for layers 2 and 3, a material 4 is applied, which during
  • Hardening leads to a tension of the substrate 1, so that there is a surface that is curved at least in one direction forms.
  • Commercial epoxy-based adhesives can be used for this.
  • curvature in two directions is also possible.
  • deformations of at least 1 ⁇ m can easily be achieved over the entire chip area. It should be noted that the chip could possibly be thinned more in order to achieve greater deformation.
  • a torsion-like deformation, as shown in FIG. 7, should also be considered. For example, as indicated by the arrows shown, it is possible to twist opposite sides in opposite directions.
  • parts A can be removed from the substrate surface, as indicated by dashed lines in FIG , This is done either by obliquely etching or grinding edge regions of the substrate as shown on the left side of FIG. 2 or by etching out or grinding individual parts A as shown on the right side of FIG. In this way it is ensured that it is not possible, or at least very expensive, to bring the substrate 1 back into a flat shape after deformation.
  • the integrated circuit arrangement is constructed such that the substrate is applied to a carrier 5, the carrier 5 forming the substrate.
  • Recesses could also be provided here, which are not shown in connection with FIG. 4.
  • the carrier 5 is not only deformed on one surface as shown in FIG. 4, but is also made overall from a flat shape to a curved or twisted shape.
  • elevations 6 are formed on the surface of the carrier, which, when brought together with the substrate 1, deforms the substrate 1 together with its applied layers. This can take place in particular in that a material 4 similar to that in the exemplary embodiment shown in FIG. 2 is introduced into the spaces between the elevations, the substrate and the carrier, which leads to the bracing of the substrate when drying.
  • the basic idea of the invention resides in permanently deforming the substrate carrying an integrated circuit in such a way that the layers applied to the substrate cannot be selectively removed by means of a grinding process.

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Wire Bonding (AREA)
  • Die Bonding (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Structure Of Printed Boards (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
EP02703497A 2001-02-14 2002-01-22 Integrierte schaltungsanordnung aus einem flächigen substrat Withdrawn EP1360718A2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10106836A DE10106836B4 (de) 2001-02-14 2001-02-14 Integrierte Schaltungsanordnung aus einem flächigen Substrat
DE10106836 2001-02-14
PCT/DE2002/000191 WO2002065548A2 (de) 2001-02-14 2002-01-22 Integrierte schaltungsanordnung aus einem flächigen substrat

Publications (1)

Publication Number Publication Date
EP1360718A2 true EP1360718A2 (de) 2003-11-12

Family

ID=7674011

Family Applications (1)

Application Number Title Priority Date Filing Date
EP02703497A Withdrawn EP1360718A2 (de) 2001-02-14 2002-01-22 Integrierte schaltungsanordnung aus einem flächigen substrat

Country Status (7)

Country Link
US (1) US7199448B2 (https=)
EP (1) EP1360718A2 (https=)
JP (1) JP3979942B2 (https=)
CN (1) CN100392846C (https=)
DE (1) DE10106836B4 (https=)
TW (1) TW519759B (https=)
WO (1) WO2002065548A2 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004004289A1 (de) 2004-01-28 2005-08-25 Infineon Technologies Ag Integrierte Schaltungsanordnung
DE102004007690B3 (de) 2004-02-16 2005-10-13 Infineon Technologies Ag Integrierte Schaltungsanordnung
US8691663B2 (en) * 2009-11-06 2014-04-08 Alliance For Sustainable Energy, Llc Methods of manipulating stressed epistructures
JP5601384B2 (ja) * 2011-02-08 2014-10-08 富士電機株式会社 半導体モジュール用放熱板の製造方法、その放熱板およびその放熱板を用いた半導体モジュール

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4021097A (en) * 1976-03-08 1977-05-03 Sperry Rand Corporation Distributive tee coupler
JPS58164231A (ja) 1982-03-25 1983-09-29 Toshiba Corp 半導体装置の製造方法
JPH01244625A (ja) * 1988-03-26 1989-09-29 Mitsubishi Electric Corp 半導体装置
JP3360105B2 (ja) * 1994-03-04 2002-12-24 富士通株式会社 半導体装置の製造方法
JP3393233B2 (ja) * 1994-06-23 2003-04-07 ソニー株式会社 記録再生用カセットの基板取付構造
JPH08288424A (ja) * 1995-04-18 1996-11-01 Nec Corp 半導体装置
US6027958A (en) * 1996-07-11 2000-02-22 Kopin Corporation Transferred flexible integrated circuit
US5955776A (en) * 1996-12-04 1999-09-21 Ball Semiconductor, Inc. Spherical shaped semiconductor integrated circuit
JP2845232B2 (ja) 1997-01-13 1999-01-13 日本電気株式会社 半導体装置
JP3400329B2 (ja) * 1998-01-07 2003-04-28 日本電信電話株式会社 半導体装置
DE59813938D1 (de) 1998-08-19 2007-04-19 Infineon Technologies Ag Halbleiterchip mit Oberflächenabdeckung gegen optische Untersuchung der Schaltungsstruktur
US6500759B1 (en) * 1998-10-05 2002-12-31 Seiko Epson Corporation Protective layer having compression stress on titanium layer in method of making a semiconductor device
JP3720599B2 (ja) * 1998-10-07 2005-11-30 日本電信電話株式会社 半導体装置
TW460927B (en) * 1999-01-18 2001-10-21 Toshiba Corp Semiconductor device, mounting method for semiconductor device and manufacturing method for semiconductor device
JP3515012B2 (ja) 1999-04-23 2004-04-05 シャープ株式会社 半導体装置およびその製造方法
JP3553457B2 (ja) 2000-03-31 2004-08-11 シャープ株式会社 半導体装置およびその製造方法
JP3265301B2 (ja) * 2000-06-05 2002-03-11 株式会社東芝 半導体装置とその製造方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO02065548A3 *

Also Published As

Publication number Publication date
CN1541413A (zh) 2004-10-27
JP3979942B2 (ja) 2007-09-19
DE10106836B4 (de) 2009-01-22
DE10106836A1 (de) 2002-09-05
US20040070052A1 (en) 2004-04-15
CN100392846C (zh) 2008-06-04
WO2002065548A3 (de) 2002-10-17
US7199448B2 (en) 2007-04-03
WO2002065548A2 (de) 2002-08-22
TW519759B (en) 2003-02-01
JP2004523904A (ja) 2004-08-05

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