DE69508816T2 - Substrat für integrierte Bauelemente mit einer Dünnschicht und Herstellungsverfahren - Google Patents

Substrat für integrierte Bauelemente mit einer Dünnschicht und Herstellungsverfahren

Info

Publication number
DE69508816T2
DE69508816T2 DE69508816T DE69508816T DE69508816T2 DE 69508816 T2 DE69508816 T2 DE 69508816T2 DE 69508816 T DE69508816 T DE 69508816T DE 69508816 T DE69508816 T DE 69508816T DE 69508816 T2 DE69508816 T2 DE 69508816T2
Authority
DE
Germany
Prior art keywords
substrate
manufacturing process
thin layer
integrated devices
integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69508816T
Other languages
English (en)
Other versions
DE69508816D1 (de
Inventor
Michel Bruel
Beatrice Biasse
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Publication of DE69508816D1 publication Critical patent/DE69508816D1/de
Application granted granted Critical
Publication of DE69508816T2 publication Critical patent/DE69508816T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
DE69508816T 1994-01-26 1995-01-24 Substrat für integrierte Bauelemente mit einer Dünnschicht und Herstellungsverfahren Expired - Lifetime DE69508816T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9400834A FR2715503B1 (fr) 1994-01-26 1994-01-26 Substrat pour composants intégrés comportant une couche mince et son procédé de réalisation.

Publications (2)

Publication Number Publication Date
DE69508816D1 DE69508816D1 (de) 1999-05-12
DE69508816T2 true DE69508816T2 (de) 1999-10-07

Family

ID=9459418

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69508816T Expired - Lifetime DE69508816T2 (de) 1994-01-26 1995-01-24 Substrat für integrierte Bauelemente mit einer Dünnschicht und Herstellungsverfahren

Country Status (5)

Country Link
US (1) US5661333A (de)
EP (1) EP0665587B1 (de)
JP (1) JP3970943B2 (de)
DE (1) DE69508816T2 (de)
FR (1) FR2715503B1 (de)

Families Citing this family (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5949132A (en) * 1995-05-02 1999-09-07 Texas Instruments Incorporated Dambarless leadframe for molded component encapsulation
FR2744285B1 (fr) * 1996-01-25 1998-03-06 Commissariat Energie Atomique Procede de transfert d'une couche mince d'un substrat initial sur un substrat final
FR2748851B1 (fr) 1996-05-15 1998-08-07 Commissariat Energie Atomique Procede de realisation d'une couche mince de materiau semiconducteur
DE19630932A1 (de) * 1996-07-31 1998-02-05 Wacker Siltronic Halbleitermat Träger für eine Halbleiterscheibe und Verwendung des Trägers
US6033974A (en) 1997-05-12 2000-03-07 Silicon Genesis Corporation Method for controlled cleaving process
US6291313B1 (en) 1997-05-12 2001-09-18 Silicon Genesis Corporation Method and device for controlled cleaving process
CA2290104A1 (en) * 1997-05-12 1998-11-19 Silicon Genesis Corporation A controlled cleavage process
US6159825A (en) 1997-05-12 2000-12-12 Silicon Genesis Corporation Controlled cleavage thin film separation process using a reusable substrate
US20070122997A1 (en) 1998-02-19 2007-05-31 Silicon Genesis Corporation Controlled process and resulting device
US6027988A (en) * 1997-05-28 2000-02-22 The Regents Of The University Of California Method of separating films from bulk substrates by plasma immersion ion implantation
US6548382B1 (en) 1997-07-18 2003-04-15 Silicon Genesis Corporation Gettering technique for wafers made using a controlled cleaving process
FR2773261B1 (fr) 1997-12-30 2000-01-28 Commissariat Energie Atomique Procede pour le transfert d'un film mince comportant une etape de creation d'inclusions
US6180495B1 (en) * 1998-04-03 2001-01-30 Motorola, Inc. Silicon carbide transistor and method therefor
US5933750A (en) * 1998-04-03 1999-08-03 Motorola, Inc. Method of fabricating a semiconductor device with a thinned substrate
US6291326B1 (en) 1998-06-23 2001-09-18 Silicon Genesis Corporation Pre-semiconductor process implant and post-process film separation
US6500732B1 (en) 1999-08-10 2002-12-31 Silicon Genesis Corporation Cleaving process to fabricate multilayered substrates using low implantation doses
US6263941B1 (en) 1999-08-10 2001-07-24 Silicon Genesis Corporation Nozzle for cleaving substrates
FR2809867B1 (fr) * 2000-05-30 2003-10-24 Commissariat Energie Atomique Substrat fragilise et procede de fabrication d'un tel substrat
FR2823596B1 (fr) * 2001-04-13 2004-08-20 Commissariat Energie Atomique Substrat ou structure demontable et procede de realisation
FR2823599B1 (fr) 2001-04-13 2004-12-17 Commissariat Energie Atomique Substrat demomtable a tenue mecanique controlee et procede de realisation
DE10131249A1 (de) * 2001-06-28 2002-05-23 Wacker Siltronic Halbleitermat Verfahren zur Herstellung eines Films oder einer Schicht aus halbleitendem Material
FR2828579B1 (fr) * 2001-08-13 2004-01-30 St Microelectronics Sa Procede de manipulation d'une plaquette de silicium mince
US8187377B2 (en) 2002-10-04 2012-05-29 Silicon Genesis Corporation Non-contact etch annealing of strained layers
DE10330430A1 (de) * 2003-07-04 2005-02-17 Schott Ag Dünnstsubstratträger
FR2848336B1 (fr) 2002-12-09 2005-10-28 Commissariat Energie Atomique Procede de realisation d'une structure contrainte destinee a etre dissociee
US6836059B2 (en) * 2003-03-25 2004-12-28 Itt Manufacturing Enterprises, Inc. Image intensifier and electron multiplier therefor
FR2856844B1 (fr) 2003-06-24 2006-02-17 Commissariat Energie Atomique Circuit integre sur puce de hautes performances
FR2857953B1 (fr) 2003-07-21 2006-01-13 Commissariat Energie Atomique Structure empilee, et procede pour la fabriquer
JP4809600B2 (ja) * 2003-10-28 2011-11-09 株式会社半導体エネルギー研究所 半導体装置の作製方法
FR2861497B1 (fr) 2003-10-28 2006-02-10 Soitec Silicon On Insulator Procede de transfert catastrophique d'une couche fine apres co-implantation
EP1605502A1 (de) * 2004-06-08 2005-12-14 Interuniversitair Microelektronica Centrum Vzw Transfermethode zur Herstellung von elektronischen Geräten
EP1605503A3 (de) * 2004-06-04 2008-02-27 Interuniversitair Microelektronica Centrum ( Imec) Transfermethode zur Herstellung von elektronischen Geräten
JP4838504B2 (ja) * 2004-09-08 2011-12-14 キヤノン株式会社 半導体装置の製造方法
FR2889887B1 (fr) 2005-08-16 2007-11-09 Commissariat Energie Atomique Procede de report d'une couche mince sur un support
FR2891281B1 (fr) 2005-09-28 2007-12-28 Commissariat Energie Atomique Procede de fabrication d'un element en couches minces.
US8293619B2 (en) 2008-08-28 2012-10-23 Silicon Genesis Corporation Layer transfer of films utilizing controlled propagation
US8993410B2 (en) 2006-09-08 2015-03-31 Silicon Genesis Corporation Substrate cleaving under controlled stress conditions
US9362439B2 (en) 2008-05-07 2016-06-07 Silicon Genesis Corporation Layer transfer of films utilizing controlled shear region
US7811900B2 (en) 2006-09-08 2010-10-12 Silicon Genesis Corporation Method and structure for fabricating solar cells using a thick layer transfer process
FR2910179B1 (fr) 2006-12-19 2009-03-13 Commissariat Energie Atomique PROCEDE DE FABRICATION DE COUCHES MINCES DE GaN PAR IMPLANTATION ET RECYCLAGE D'UN SUBSTRAT DE DEPART
FR2925221B1 (fr) 2007-12-17 2010-02-19 Commissariat Energie Atomique Procede de transfert d'une couche mince
US8330126B2 (en) 2008-08-25 2012-12-11 Silicon Genesis Corporation Race track configuration and method for wafering silicon solar substrates
US8329557B2 (en) 2009-05-13 2012-12-11 Silicon Genesis Corporation Techniques for forming thin films by implantation with reduced channeling
FR2947098A1 (fr) 2009-06-18 2010-12-24 Commissariat Energie Atomique Procede de transfert d'une couche mince sur un substrat cible ayant un coefficient de dilatation thermique different de celui de la couche mince
FR2978600B1 (fr) 2011-07-25 2014-02-07 Soitec Silicon On Insulator Procede et dispositif de fabrication de couche de materiau semi-conducteur
DE102012112989A1 (de) * 2012-12-21 2014-06-26 Ev Group E. Thallner Gmbh Verfahren zum Aufbringen einer Temporärbondschicht
FR3019374A1 (fr) 2014-03-28 2015-10-02 Soitec Silicon On Insulator Procede de separation et de transfert de couches

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1348742A (fr) * 1962-02-03 1964-01-10 Siemens Ag Dispositif semi-conducteur
NL7404364A (nl) * 1974-04-01 1975-10-03 Philips Nv Werkwijze en inrichting voor het bewerken van vlakke voorwerpen.
GB1546758A (en) * 1975-04-11 1979-05-31 English Electric Valve Co Ltd Electron-emissive semiconductor devices
JPS5466777A (en) * 1977-11-07 1979-05-29 Mitsubishi Electric Corp Manufacture for semiconductor device
FR2681472B1 (fr) * 1991-09-18 1993-10-29 Commissariat Energie Atomique Procede de fabrication de films minces de materiau semiconducteur.
FR2684801B1 (fr) * 1991-12-06 1997-01-24 Picogiga Sa Procede de realisation de composants semiconducteurs, notamment sur gaas ou inp, avec recuperation du substrat par voie chimique.

Also Published As

Publication number Publication date
FR2715503A1 (fr) 1995-07-28
JPH07263291A (ja) 1995-10-13
DE69508816D1 (de) 1999-05-12
US5661333A (en) 1997-08-26
EP0665587B1 (de) 1999-04-07
EP0665587A1 (de) 1995-08-02
FR2715503B1 (fr) 1996-04-05
JP3970943B2 (ja) 2007-09-05

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