JPS5466777A - Manufacture for semiconductor device - Google Patents

Manufacture for semiconductor device

Info

Publication number
JPS5466777A
JPS5466777A JP13379577A JP13379577A JPS5466777A JP S5466777 A JPS5466777 A JP S5466777A JP 13379577 A JP13379577 A JP 13379577A JP 13379577 A JP13379577 A JP 13379577A JP S5466777 A JPS5466777 A JP S5466777A
Authority
JP
Japan
Prior art keywords
wafer
grooves
circumference
chuck
scaling
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13379577A
Other languages
Japanese (ja)
Inventor
Shiro Shibazaki
Hiroshi Hirano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP13379577A priority Critical patent/JPS5466777A/en
Publication of JPS5466777A publication Critical patent/JPS5466777A/en
Pending legal-status Critical Current

Links

Landscapes

  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

PURPOSE: To make easy the wafer removal after exposure, by placing the glass mask having the pattern overlaid from the area of wafer on the Si wafer coating photo resist and by poviding grooves at the external circumference of wafer chuck provided at the rear surface.
CONSTITUTION: The pattern 5 of the glass mask 4 placed on the Si wafer is extended from the size of the wafer 1. Further, the wafer chuck 6 fixed with vacuum adsorption from the back of the wafer 1 is formed for the grooves 7 at the external circumference newly. With this constitution, when the mask 4 is placed on the photo resist film 3 coated via the SiO2 film on the wafer 1, air is immersed easily from the circumference of the wafer 1 at the end of exposure and scaling is made easy. Further, the absorbing force of the chuck 6 at the circumference is weakened due to the presence of the grooves 7 and scaling is progressed by this.
COPYRIGHT: (C)1979,JPO&Japio
JP13379577A 1977-11-07 1977-11-07 Manufacture for semiconductor device Pending JPS5466777A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13379577A JPS5466777A (en) 1977-11-07 1977-11-07 Manufacture for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13379577A JPS5466777A (en) 1977-11-07 1977-11-07 Manufacture for semiconductor device

Publications (1)

Publication Number Publication Date
JPS5466777A true JPS5466777A (en) 1979-05-29

Family

ID=15113189

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13379577A Pending JPS5466777A (en) 1977-11-07 1977-11-07 Manufacture for semiconductor device

Country Status (1)

Country Link
JP (1) JPS5466777A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5661333A (en) * 1994-01-26 1997-08-26 Commissariat A L'energie Atomique Substrate for integrated components comprising a thin film and an intermediate film

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5661333A (en) * 1994-01-26 1997-08-26 Commissariat A L'energie Atomique Substrate for integrated components comprising a thin film and an intermediate film

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