JPS5468171A - Exposure unit for semiconductor wafer - Google Patents

Exposure unit for semiconductor wafer

Info

Publication number
JPS5468171A
JPS5468171A JP13479777A JP13479777A JPS5468171A JP S5468171 A JPS5468171 A JP S5468171A JP 13479777 A JP13479777 A JP 13479777A JP 13479777 A JP13479777 A JP 13479777A JP S5468171 A JPS5468171 A JP S5468171A
Authority
JP
Japan
Prior art keywords
center
semiconductor wafer
wafer
jetting
exposure unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13479777A
Other languages
Japanese (ja)
Inventor
Shigeo Kotani
Masakazu Shiozaki
Nobuharu Yanai
Hiroshi Tokukou
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP13479777A priority Critical patent/JPS5468171A/en
Publication of JPS5468171A publication Critical patent/JPS5468171A/en
Pending legal-status Critical Current

Links

Landscapes

  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

PURPOSE: To avoid the residual air at the center and to perform excellent bonding between the wafer and the mask, by jetting from the center of the wafer placing stand, and starting to contact for the upper side of the semiconductor wafer from the center to the circumference.
CONSTITUTION: The semiconductor wafer 2 coated with the photo sensitive layer is placed on the wafer mounting stand 11, and jetting is made from the jet source 14 through the jet hole 12. The gas jetted is contacted with the jet hole 12 and is exerted externally through the continuous groove 13 made on the upper surface. With this operation, the center of the semiconductor wafer 2 is slightly swelled and the mask is gradually contacted from the center to the circumference.
COPYRIGHT: (C)1979,JPO&Japio
JP13479777A 1977-11-11 1977-11-11 Exposure unit for semiconductor wafer Pending JPS5468171A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13479777A JPS5468171A (en) 1977-11-11 1977-11-11 Exposure unit for semiconductor wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13479777A JPS5468171A (en) 1977-11-11 1977-11-11 Exposure unit for semiconductor wafer

Publications (1)

Publication Number Publication Date
JPS5468171A true JPS5468171A (en) 1979-06-01

Family

ID=15136750

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13479777A Pending JPS5468171A (en) 1977-11-11 1977-11-11 Exposure unit for semiconductor wafer

Country Status (1)

Country Link
JP (1) JPS5468171A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57109330A (en) * 1980-12-26 1982-07-07 Hitachi Ltd Mask aliner

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57109330A (en) * 1980-12-26 1982-07-07 Hitachi Ltd Mask aliner

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