ID19642A - Substrat yang disediakan dengan suatu lapisan intan polikristalin - Google Patents

Substrat yang disediakan dengan suatu lapisan intan polikristalin

Info

Publication number
ID19642A
ID19642A IDP970985A ID970985A ID19642A ID 19642 A ID19642 A ID 19642A ID P970985 A IDP970985 A ID P970985A ID 970985 A ID970985 A ID 970985A ID 19642 A ID19642 A ID 19642A
Authority
ID
Indonesia
Prior art keywords
polychristalin
intan
layer
substrate provided
substrate
Prior art date
Application number
IDP970985A
Other languages
English (en)
Inventor
Hermann Dipl Ing Holzer
Doz Dr Roland Haubner
Benno Prof Dr Lux
Helmut Dr Nechansky
Original Assignee
Electrovac
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Electrovac filed Critical Electrovac
Publication of ID19642A publication Critical patent/ID19642A/id

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
IDP970985A 1996-03-25 1997-03-25 Substrat yang disediakan dengan suatu lapisan intan polikristalin ID19642A (id)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
AT0053996A AT411070B (de) 1996-03-25 1996-03-25 Verfahren zur herstellung eines substrates mit einer polykristallinen diamantschicht

Publications (1)

Publication Number Publication Date
ID19642A true ID19642A (id) 1998-07-23

Family

ID=3493299

Family Applications (1)

Application Number Title Priority Date Filing Date
IDP970985A ID19642A (id) 1996-03-25 1997-03-25 Substrat yang disediakan dengan suatu lapisan intan polikristalin

Country Status (7)

Country Link
US (1) US5925413A (id)
AT (1) AT411070B (id)
DE (1) DE19710202A1 (id)
FR (1) FR2746415B1 (id)
GB (1) GB2311539B (id)
ID (1) ID19642A (id)
IT (1) IT1290465B1 (id)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT408153B (de) 1998-09-02 2001-09-25 Electrovac Metall-matrix-composite- (mmc-) bauteil
GB9910841D0 (en) 1999-05-10 1999-07-07 Univ Nanyang Heat transfer surface
EP1205451A1 (en) * 2000-03-07 2002-05-15 Ibiden Co., Ltd. Ceramic substrate for manufacture/inspection of semiconductor
AT6666U1 (de) 2002-09-23 2004-01-26 Plansee Ag Wärmesenke aus diamant-haltigem verbundwerkstoff mit mehrlagigem überzug
US7866343B2 (en) 2002-12-18 2011-01-11 Masco Corporation Of Indiana Faucet
US8220489B2 (en) 2002-12-18 2012-07-17 Vapor Technologies Inc. Faucet with wear-resistant valve component
US7866342B2 (en) 2002-12-18 2011-01-11 Vapor Technologies, Inc. Valve component for faucet
US8555921B2 (en) 2002-12-18 2013-10-15 Vapor Technologies Inc. Faucet component with coating
TW200631144A (en) * 2005-02-18 2006-09-01 Mitac Technology Corp Chip heat dissipation structure and manufacturing method thereof
TWI290012B (en) * 2005-03-03 2007-11-11 Mitac Technology Corp Printed circuit board structure and manufacturing method thereof
US20070201207A1 (en) * 2006-02-24 2007-08-30 Ming-Hang Hwang Chip Heat Dissipation System and Structure of Heat Exchange Device and Manufacturing Method Thereof
US20070199677A1 (en) * 2006-02-24 2007-08-30 Ming-Hang Hwang Heat Sink Fin Structure and Manufacturing Method Thereof
US20070199679A1 (en) * 2006-02-24 2007-08-30 Ming-Hang Hwang Chip Heat Dissipation System and Manufacturing Method and Structure of Heat Dissipation Device Thereof
US20070201203A1 (en) * 2006-02-24 2007-08-30 Ming-Hang Hwang Adhesion Material Structure and Process Method Thereof
US20070199682A1 (en) * 2006-02-24 2007-08-30 Ming-Hang Hwang Dissipation Heat Pipe Structure and Manufacturing Method Thereof
DE102007051800A1 (de) * 2007-10-26 2009-05-07 Jenoptik Laserdiode Gmbh Trägerkörper für Halbleiterbauelemente
DE102008056368A1 (de) * 2008-11-07 2010-05-12 Esk Ceramics Gmbh & Co. Kg Sicherungselement für Schraubverbindungen und dessen Verwendung
FR3057179B1 (fr) * 2016-10-07 2021-05-21 Commissariat Energie Atomique Procede de fabrication d'elements spheriques submicrometriques ou micrometriques, a cœur en materiau inorganique et revetement en diamant
CN110428912B (zh) * 2019-08-02 2020-11-03 太原理工大学 含有金刚石的第一壁材料及其制备方法

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5921032A (ja) * 1982-07-26 1984-02-02 Sumitomo Electric Ind Ltd 半導体装置用基板
JPS616199A (ja) * 1984-06-21 1986-01-11 Nec Corp ダイヤモンドの気相合成方法とその装置
EP0251767A3 (en) * 1986-06-30 1988-09-07 Canon Kabushiki Kaisha Insulated gate type semiconductor device and method of producing the same
US5284709A (en) * 1987-03-30 1994-02-08 Crystallume Diamond materials with enhanced heat conductivity
US5068148A (en) * 1988-12-21 1991-11-26 Mitsubishi Metal Corporation Diamond-coated tool member, substrate thereof and method for producing same
US4988421A (en) * 1989-01-12 1991-01-29 Ford Motor Company Method of toughening diamond coated tools
US4919974A (en) * 1989-01-12 1990-04-24 Ford Motor Company Making diamond composite coated cutting tools
US5100703A (en) * 1989-02-23 1992-03-31 Toshiba Tungaloy Co., Ltd. Diamond-coated sintered body excellent in adhesion and process for preparing the same
WO1991004353A1 (en) * 1989-09-22 1991-04-04 Showa Denko Kabushiki Kaisha Vapor deposited diamond synthesizing method on electrochemically treated substrate
JPH03141197A (ja) * 1989-10-27 1991-06-17 Natl Inst For Res In Inorg Mater プラズマを用いるダイヤモンドの合成法
US5082359A (en) * 1989-11-28 1992-01-21 Epion Corporation Diamond films and method of growing diamond films on nondiamond substrates
CA2060823C (en) * 1991-02-08 2002-09-10 Naoya Omori Diamond-or diamond-like carbon-coated hard materials
GB9103691D0 (en) * 1991-02-21 1991-04-10 De Beers Ind Diamond Radiation absorbers
US5236740A (en) * 1991-04-26 1993-08-17 National Center For Manufacturing Sciences Methods for coating adherent diamond films on cemented tungsten carbide substrates
WO1992022689A1 (en) * 1991-06-18 1992-12-23 The Board Of Governors Of Wayne State University Process for making large-area single crystal diamond films
JP3121102B2 (ja) * 1992-03-26 2000-12-25 キヤノン株式会社 平板ダイヤモンド結晶、及びその形成方法
AU4245693A (en) * 1992-05-04 1993-11-29 Case Western Reserve University Growth of diamond crystals
US5955212A (en) * 1992-12-08 1999-09-21 Osaka Diamond Industrial Co., Ltd. Superhard film-coated member and method of manufacturing the same
JPH06263595A (ja) * 1993-03-10 1994-09-20 Canon Inc ダイヤモンド被覆部材及びその製造方法
AT400041B (de) * 1993-03-26 1995-09-25 Plansee Tizit Gmbh Hartmetall-substrat mit diamantschicht hoher haftfestigkeit
JP3549228B2 (ja) * 1993-05-14 2004-08-04 株式会社神戸製鋼所 高配向性ダイヤモンド放熱基板
SE503038C2 (sv) * 1993-07-09 1996-03-11 Sandvik Ab Diamantbelagt skärande verktyg av hårdmetall eller keramik
FR2714254B1 (fr) * 1993-12-20 1996-03-08 Aerospatiale Elément de transfert thermique, utilisable notamment en électronique comme support de circuit imprimé ou de composant et son procédé de fabrication.
EP0673055A1 (en) * 1994-03-17 1995-09-20 Shin-Etsu Chemical Co., Ltd. Method for forming a superhard carbonaceous protective film on articles
WO1995027806A1 (en) * 1994-04-06 1995-10-19 The Regents Of The University Of California Process to produce diamond films
JP3728465B2 (ja) * 1994-11-25 2005-12-21 株式会社神戸製鋼所 単結晶ダイヤモンド膜の形成方法
US5458927A (en) * 1995-03-08 1995-10-17 General Motors Corporation Process for the formation of wear- and scuff-resistant carbon coatings
GB2304982B (en) * 1995-09-08 1999-07-21 Marconi Gec Ltd Electron microscope specimen supports

Also Published As

Publication number Publication date
DE19710202A1 (de) 1997-10-30
FR2746415A1 (fr) 1997-09-26
ITMI970653A1 (it) 1998-09-21
ATA53996A (de) 1997-09-15
GB2311539B (en) 2000-03-01
GB9705491D0 (en) 1997-05-07
IT1290465B1 (it) 1998-12-04
GB2311539A (en) 1997-10-01
FR2746415B1 (fr) 2001-08-31
US5925413A (en) 1999-07-20
AT411070B (de) 2003-09-25

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