EP1317763B1 - Cartouche fusible, son procede de production, ainsi que substance de brasure - Google Patents

Cartouche fusible, son procede de production, ainsi que substance de brasure Download PDF

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Publication number
EP1317763B1
EP1317763B1 EP01980371A EP01980371A EP1317763B1 EP 1317763 B1 EP1317763 B1 EP 1317763B1 EP 01980371 A EP01980371 A EP 01980371A EP 01980371 A EP01980371 A EP 01980371A EP 1317763 B1 EP1317763 B1 EP 1317763B1
Authority
EP
European Patent Office
Prior art keywords
solder
tin
substance
alloy
copper
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
EP01980371A
Other languages
German (de)
English (en)
Other versions
EP1317763A1 (fr
Inventor
Alexander Etschmaier
Helmut Wieser
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Priority to EP01980371A priority Critical patent/EP1317763B1/fr
Priority to SI200130845T priority patent/SI1317763T1/sl
Publication of EP1317763A1 publication Critical patent/EP1317763A1/fr
Application granted granted Critical
Publication of EP1317763B1 publication Critical patent/EP1317763B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01HELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H85/00Protective devices in which the current flows through a part of fusible material and this current is interrupted by displacement of the fusible material when this current becomes excessive
    • H01H85/02Details
    • H01H85/04Fuses, i.e. expendable parts of the protective device, e.g. cartridges
    • H01H85/05Component parts thereof
    • H01H85/055Fusible members
    • H01H85/08Fusible members characterised by the shape or form of the fusible member
    • H01H85/11Fusible members characterised by the shape or form of the fusible member with applied local area of a metal which, on melting, forms a eutectic with the main material of the fusible member, i.e. M-effect devices

Definitions

  • the invention first relates to a fuse link, in particular for low-voltage high-performance fuses, NH fuses, which has at least one fuse element with a solder substance in a solder deposit of a carrier, in detail according to the preamble of claim 1.
  • the solder is based on formed by tin and the carrier based on copper.
  • fuse links are common in the market.
  • a tin-cadmium alloy is usually used as the solder substance.
  • Common is SnCd 80 20, so an alloy with 80 weight percent tin and 20 weight percent cadmium.
  • the fusible links have a solder of SnBi 95 5. In this case, the melting times of the fusible leads provided with this solder spread significantly further than those with the conventional SnCd solders.
  • SnBi solders are generally prone to bleed. To prevent this, the solder is covered with a silicone-containing layer in a marketed fuse link. In this case, the extinguishing behavior of the fuse insert when decomposing the silicone due to the carbon atoms deteriorate significantly.
  • the invention is first based on the object to develop a fuse link, which works with a cadmium-free solder on the fusible conductor and in which the problems described, in particular the scattering of Abschaltagonist and the deliquescence of the solder are improved so that the otherwise good properties of cadmium ambiencen Fusible conductor systems can be achieved.
  • the solution of the described problem is carried out according to the invention, first by a fuse link according to claim 1.
  • the solder contains as active substance a tin alloy with two other ingredients, a first by weight percent larger component, but by weight percent is smaller than the proportion of the ground substance Tin, then selected to lower the melting temperature of the solder.
  • a second, by weight percent smaller component is a substance that does not dissolve in the tin, where by crystallizing on cooling from liquid to solid state, which cause a fine structure and prevent coarsening of the structure under load of the fuse.
  • Such a fusible conductor-solder system can be tuned to have a similar scattering behavior as using cadmium and suitable response times.
  • the claims 2 to 6 relate to advantageous developments of the solder-fusible conductor system.
  • the invention has the further object of further developing a cadmium-free fuse link to the effect that the solder is promoted in its resistance to deliquescence.
  • the solution of the described object is achieved according to the invention by a fuse link according to claim 7.
  • the solder as solder material in the solder depot of a carrier, and / or the carrier provided with an oxide skin.
  • the oxide skin can be thermally or chemically formed. It is sufficient if the oxide skin is formed in the boundary region between solder and carrier.
  • the wetting of the carrier can also be controlled as desired by the geometry of the oxidized regions.
  • the invention further relates to a method for producing a fuse link, after which solder and / or carrier are subjected to a thermal treatment in an oxidizing atmosphere. It is further provided a method for producing a fuse link, after which the solder and / or the carrier is treated with a substance which affords the solder and / or carrier.
  • a sodium sulfide solution is suitable for this purpose.
  • a substance affine to the solder and / or carrier can be applied between absorbent rolls and rolls impregnated with the affine substance.
  • solder material consisting of a tin-bismuth-copper alloy, a tin-indium-copper alloy or a tin-bismuth-iron alloy.
  • a solder material consisting of a tin-bismuth-copper alloy, a tin-indium-copper alloy or a tin-bismuth-iron alloy.
  • a Lotwertstoff has been found, which has a tin-bismuth copper alloy with 10% to 30% bismuth and 0.3% to 1.0% copper, together with tin 99.5%, the remainder conventional impurities.
  • FIG. 1 For example, melting tests are plotted on a diagram, with a conventional tin-cadmium-solder substance being illustrated in comparison with its shutdown behavior over several tests according to the prior art on the left for comparison. In the series of experiments shown on the right, the turn-off behavior of tin-bismuth copper at different levels is illustrated.
  • FIG. 2 are in juxtaposition, left for cadmium-free solder without copper, right for an inventive embodiment with cadmium ambiencem solder and tin bismuth with copper, each a fusible conductor with bottleneck in front of a solder depot after response of the fusible conductor and broken fuse conductor reproduced.
  • FIG. 1 is on the ordinate the response time of the fusible conductor in seconds until its interruption plotted on the abscissa and tin alloys are applied with the specified ingredients and their proportions. The results are plotted over several experiments.
  • the carrier for the solder was copper.
  • Tin cadmium serves as an orientation value.
  • bismuth has been investigated in percentages by weight of 25%, 15% and 5% each at a load of 32 A phase current, here equivalent to 1.6 times the rated current.
  • the shares of copper are each at 0.8%.
  • the proportion of tin is at the difference to 99.5%, the remainder being conventional impurities.
  • the first further constituent of the tin alloy is present in a smaller proportion than the proportion of the basic substance tin.
  • the melting temperature of the solder is reduced.
  • bismuth was used for this purpose.
  • a second, by weight percent smaller component is a substance that does not dissolve in the tin, whereby upon cooling from the liquid to the solid state crystallization nuclei arise that cause a fine texture.
  • copper was used. From the diagram to FIG. 1 is the scattering behavior of the respective alloy to see and for a particular geometry of the fusible conductor, with a constriction in front of the solder, and the time to response and to shutdown. These times can be greatly influenced by the geometry of the fusible conductor and, if necessary, the type and dimensioning of a constriction in front of the solder for a given current load and when using a specific alloy for the solder.
  • Fuse inserts with a solder substance of the tin-bismuth-copper-alloy, of tin-indium-copper-alloy and of tin-bismuth-iron-alloy have proven to be very suitable.
  • a tin alloy has a content of 3% to 40% bismuth and 0.3% to 5.0%, respectively Weight percent, copper proved. Total at a proportion of tin as the difference to 99.5%, balance usual impurities.
  • a tin-indium-copper alloy with the components in the ratio and by weight percent has proved to be favorable: Sn from 70% to 96%, In from 3% to 30%, Cu from 0.3% to 5.0% ,
  • FIG. 2 For a fusible conductor of the same geometric configuration, an interrupted constriction in front of the solder depot is reproduced, in each case in magnification, the largest width of the fusible conductor being 14 mm in nature.
  • a tin-bismuth solder containing about 75% tin and 25% bismuth was used in comparison with a copper smelting conductor for comparison.
  • the right picture of the FIG. 2 is for a tin-bismuth copper alloy at 25% bismuth and 0.8% copper and a proportion of tin of 73.7%, a total of 99.5%, at 0.5% of common impurities, the situation after Interruption of the fusible conductor reproduced by the Lotein Koch.
  • solder and attacked fusible link in the microsection have a fine texture and clean contours. The energy conversion during melting of the fusible conductor is thus kept low and prevents the formation of heat cracks.
  • the behavior of the intended ternary alloys can be further promoted by an oxide skin on the solder in the solder deposit and / or on the fusible conductor, at least in the vicinity of the solder deposit.
  • an oxide skin By means of such an oxide skin, it is possible to prevent the melting solder from flowing out during the response of the fusible conductor in the fuse link.
  • This measure, to use an oxide skin targeted can generally be used in solders that are not inherently stationary, regardless of the usual structure of the solder or serving as a solder alloy.
  • Such an oxide skin may be formed thermally or chemically.
  • the solder and / or the carrier can be treated in an oxidizing atmosphere. You can specifically work with local heat, for example by a clamp.
  • affine substances are suitable for the solder or the carrier.
  • the fusible conductor in a copper-based carrier, can be treated with a sodium sulfide solution. This can be done in the simplest case by brushing or by absorbent and soaked with the affine substance roles that roll over the fusible link at the desired location. To prevent leakage of the solder even safer, it is sufficient to perform only in the area of the solder and the adjacent areas of the carrier oxidation.

Landscapes

  • Fuses (AREA)
  • Coating With Molten Metal (AREA)

Claims (17)

  1. Liaison fusible, en particulier pour des fusibles basse tension à haut pouvoir de coupure, fusibles HPC, qui présente au moins un conducteur fusible avec une substance d'apport dans un dépôt de la substance d'apport d'un support, la substance d'apport étant formée à base d'étain et le support à base de cuivre, la substance d'apport contenant comme substance efficace et sans cadmium un alliage d'étain avec deux autres composants, caractérisée en ce qu'un premier composant plus grand en pourcentages en poids, mais qui est plus petit en pourcentages en poids que la fraction de la substance de base qu'est l'étain, est choisi de sorte pour abaisser la température de fusion de la substance d'apport et un second composant plus petit en pourcentages en poids est une substance qui ne se dissout pas dans l'étain, de sorte que, lors du refroidissement de l'état liquide à l'état solide, il se forme des germes de cristallisation qui entraînent une structure fine.
  2. Liaison fusible selon la revendication 1, caractérisée en ce que la substance d'apport du conducteur fusible est un alliage étain(Sn)-bismuth(Bi)-cuivre(Cu), un alliage étain-indium(In)-cuivre ou un alliage étain-bismuth-fer.
  3. Liaison fusible selon la revendication 2, caractérisée en ce que la substance est un alliage étain(Sn)-bismuth(Bi)-cuivre (Cu), qui contient des composants dans le rapport selon les pourcentages en poids suivants : Sn de 60 % à 96 %, Bi de 3 % à 40 %, Cu de 0,3 % à 5,0 %, au total 99,5 %, le reste étant des impuretés typiques.
  4. Liaison fusible selon la revendication 2, caractérisée en ce que la substance est un alliage étain(Sn)-indium(In)-cuivre (Cu), qui contient des composants dans le rapport selon les pourcentages en poids suivants : Sn de 70 % à 96 %, In de 3 % à 30 %, Cu de 0,3 % à 5,0 %, au total 99,5 %, le reste étant des impuretés typiques.
  5. Liaison fusible selon la revendication 3, caractérisée en ce que la substance d'apport est un alliage étain-bismuth-cuivre, comprenant les composants dans le rapport selon les pourcentages en poids suivants : Sn de 89% à 96%, Bi de 3% à 10%, Cu de 0,8% à 2,3%, au total 99,5%, le reste étant des impuretés typiques.
  6. Liaison fusible selon la revendication 3, caractérisée en ce que la substance d'apport est un alliage étain-bismuth-cuivre, comprenant les composants dans le rapport selon les pourcentages en poids suivants : Sn de 69% à 89%, Bi de 10% à 30%, Cu de 0,3% à 10%, au total 99,5%, le reste étant des impuretés typiques.
  7. Liaison fusible selon la revendication 1, caractérisée en ce que la substance d'apport, comme matériau de substance d'apport dans un dépôt de substance d'apport d'un support, et/ou le support est doté d'une pellicule d'oxyde.
  8. Liaison fusible selon la revendication 7, caractérisée en ce que la pellicule d'oxyde est formée thermiquement.
  9. Liaison fusible selon la revendication 7, caractérisée en ce que la pellicule d'oxyde est formée chimiquement.
  10. Procédé pour la fabrication d'une liaison fusible selon la revendication 9, le conducteur fusible étant doté d'un matériau de la substance d'apport dans un dépôt de substance d'apport d'un support et la substance d'apport et/ou le support étant soumis à un traitement thermique dans une atmosphère oxydante.
  11. Procédé pour la fabrication d'une liaison fusible selon la revendication 9, le conducteur fusible étant doté d'un matériau de substance d'apport dans un dépôt de substance d'apport d'un support et la substance d'apport et/ou le support étant traité avec une substance affine par rapport à la substance d'apport et/ou au support.
  12. Procédé selon la revendication 11, caractérisé en ce que, dans le cas d'une liaison fusible avec une substance d'apport à base d'étain et un support à base de cuivre, le conducteur fusible est traité avec une solution de sulfure de sodium.
  13. Procédé selon la revendication 11 ou 12, caractérisé en ce qu'une substance affine par rapport à la substance d'apport et/ou le support intervient entre des rouleaux pouvant absorber et étant imbibés avec la substance affine.
  14. Procédé selon l'une quelconque des revendications 10 à 13, caractérisé en ce que l'oxydation n'est réalisée que dans la zone de la substance d'apport et des zones voisines du support.
  15. Matériau de substance d'apport pour liaisons fusibles, la substance d'apport contenant comme substance efficace et sans cadmium un alliage d'étain avec deux autres composants, caractérisée en ce qu'un premier composant plus grand en pourcentages en poids, mais qui est plus petit en pourcentages en poids que la fraction de la substance de base qu'est l'étain, est choisi de sorte pour abaisser la température de fusion de la substance d'apport et un second composant plus petit en pourcentages en poids est une substance qui ne se dissout pas dans l'étain, de sorte que, lors du refroidissement de l'état liquide à l'état solide, il se forme des germes de cristallisation qui entraînent une structure fine.
  16. Matériau de substance d'apport selon la revendication 15, composé d'un alliage étain-bismuth-cuivre, d'un alliage étain-indium-cuivre ou d'un alliage étain-bismuth-fer.
  17. Matériau de substance d'apport selon la revendication 16, caractérisée en ce qu'un alliage étain(Sn)-bismuth-(Bi)-cuivre(Cu) présente les fractions selon les pourcentages en poids suivants : Bi 10% à 30%, Cu 0,3% à 1,0%, au total avec 99,5% d'étain, le reste étant des impuretés typiques.
EP01980371A 2000-09-13 2001-09-11 Cartouche fusible, son procede de production, ainsi que substance de brasure Expired - Lifetime EP1317763B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP01980371A EP1317763B1 (fr) 2000-09-13 2001-09-11 Cartouche fusible, son procede de production, ainsi que substance de brasure
SI200130845T SI1317763T1 (sl) 2000-09-13 2001-09-11 Varovalni vloĹľek, postopek za njegovo izdelavo in snov za spajkanje

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
EP00119932 2000-09-13
EP00119932A EP1189252A1 (fr) 2000-09-13 2000-09-13 Elément fusible, son procédé de fabrication et matériau de soudure
EP01980371A EP1317763B1 (fr) 2000-09-13 2001-09-11 Cartouche fusible, son procede de production, ainsi que substance de brasure
PCT/EP2001/010499 WO2002023575A1 (fr) 2000-09-13 2001-09-11 Cartouche fusible, son procede de production, ainsi que substance de brasure

Publications (2)

Publication Number Publication Date
EP1317763A1 EP1317763A1 (fr) 2003-06-11
EP1317763B1 true EP1317763B1 (fr) 2008-05-14

Family

ID=8169826

Family Applications (2)

Application Number Title Priority Date Filing Date
EP00119932A Withdrawn EP1189252A1 (fr) 2000-09-13 2000-09-13 Elément fusible, son procédé de fabrication et matériau de soudure
EP01980371A Expired - Lifetime EP1317763B1 (fr) 2000-09-13 2001-09-11 Cartouche fusible, son procede de production, ainsi que substance de brasure

Family Applications Before (1)

Application Number Title Priority Date Filing Date
EP00119932A Withdrawn EP1189252A1 (fr) 2000-09-13 2000-09-13 Elément fusible, son procédé de fabrication et matériau de soudure

Country Status (12)

Country Link
US (1) US7109839B2 (fr)
EP (2) EP1189252A1 (fr)
CN (1) CN100350539C (fr)
AT (1) ATE395715T1 (fr)
BR (1) BRPI0113834B1 (fr)
CZ (1) CZ299341B6 (fr)
DE (1) DE50113976D1 (fr)
ES (1) ES2302752T3 (fr)
HU (1) HU226335B1 (fr)
PL (1) PL202046B1 (fr)
SI (1) SI1317763T1 (fr)
WO (1) WO2002023575A1 (fr)

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JP2005171371A (ja) * 2003-12-15 2005-06-30 Uchihashi Estec Co Ltd 合金型温度ヒューズ及び温度ヒューズエレメント用線材
EP1557476A1 (fr) * 2004-01-15 2005-07-27 ETI Elektroelement d.d. Alliage à bas point de fusion d'étain, de bismuth et d'antimoIne pour des éléments fusibles pour les dispositifs fusibles à basse tension
DE102006040661A1 (de) * 2006-08-30 2008-03-13 Robert Bosch Gmbh Strom-Überlastschutz eines Bürstenapparates
DE102007014334A1 (de) * 2007-03-26 2008-10-02 Robert Bosch Gmbh Schmelzlegierungselement, Thermosicherung mit einem Schmelzlegierungselement sowie Verfahren zum Herstellen einer Thermosicherung
US8454254B2 (en) 2007-11-28 2013-06-04 Kinesis Corporation Support accessory for split keyboard
KR20090090161A (ko) * 2008-02-20 2009-08-25 삼성전자주식회사 전기적 퓨즈 소자
KR20090112390A (ko) * 2008-04-24 2009-10-28 삼성전자주식회사 전기적 퓨즈 소자
JP7231527B2 (ja) * 2018-12-28 2023-03-01 ショット日本株式会社 保護素子用ヒューズ素子およびそれを利用した保護素子

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DE1035749B (de) * 1955-08-23 1958-08-07 Licencia Talalmanyokat UEberstromtraege Schmelzsicherung
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CS265255B1 (cs) * 1987-03-02 1989-10-13 Jindrich Kadlec Tavný vodič elektrické výkonové pojistky
CS363190A2 (en) * 1989-07-24 1991-08-13 Schrack Telecom Thermal cut-out
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JP3242835B2 (ja) * 1996-03-29 2001-12-25 矢崎総業株式会社 ヒューズ及びその製造方法
GB9701819D0 (en) * 1997-01-29 1997-03-19 Alpha Fry Ltd Lead-free tin alloy
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Also Published As

Publication number Publication date
WO2002023575A1 (fr) 2002-03-21
BR0113834A (pt) 2004-09-28
EP1317763A1 (fr) 2003-06-11
PL362409A1 (en) 2004-11-02
CN100350539C (zh) 2007-11-21
BRPI0113834B1 (pt) 2015-09-15
EP1189252A1 (fr) 2002-03-20
ES2302752T3 (es) 2008-08-01
HU226335B1 (en) 2008-09-29
SI1317763T1 (sl) 2008-10-31
CN1455942A (zh) 2003-11-12
US20040027226A1 (en) 2004-02-12
CZ20031036A3 (cs) 2003-09-17
HUP0300734A2 (hu) 2003-09-29
CZ299341B6 (cs) 2008-06-25
PL202046B1 (pl) 2009-05-29
ATE395715T1 (de) 2008-05-15
HUP0300734A3 (en) 2005-12-28
DE50113976D1 (de) 2008-06-26
US7109839B2 (en) 2006-09-19

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