EP1189263A3 - Präzisions-Hochfrequenzkondensaotor auf einem Halbleitersubstrat - Google Patents

Präzisions-Hochfrequenzkondensaotor auf einem Halbleitersubstrat Download PDF

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Publication number
EP1189263A3
EP1189263A3 EP01307796A EP01307796A EP1189263A3 EP 1189263 A3 EP1189263 A3 EP 1189263A3 EP 01307796 A EP01307796 A EP 01307796A EP 01307796 A EP01307796 A EP 01307796A EP 1189263 A3 EP1189263 A3 EP 1189263A3
Authority
EP
European Patent Office
Prior art keywords
electrode
capacitor
substrate
semiconductor substrate
capacitors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP01307796A
Other languages
English (en)
French (fr)
Other versions
EP1189263A2 (de
EP1189263B1 (de
Inventor
Haim Goldberger
Sik Lui
Jacek Korec
Y. Mohammed Kasem
Harianto Wong
Jack Van Den Heuvel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Vishay Intertechnology Inc
Original Assignee
Vishay Intertechnology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Vishay Intertechnology Inc filed Critical Vishay Intertechnology Inc
Priority to EP07021795.5A priority Critical patent/EP1895568B1/de
Priority to EP07021796.3A priority patent/EP1895569B1/de
Publication of EP1189263A2 publication Critical patent/EP1189263A2/de
Publication of EP1189263A3 publication Critical patent/EP1189263A3/de
Application granted granted Critical
Publication of EP1189263B1 publication Critical patent/EP1189263B1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/212—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/611—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using diodes as protective elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/241—Dispositions, e.g. layouts
    • H10W72/242—Dispositions, e.g. layouts relative to the surface, e.g. recessed, protruding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/241—Dispositions, e.g. layouts
    • H10W72/244—Dispositions, e.g. layouts relative to underlying supporting features, e.g. bond pads, RDLs or vias
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/922—Bond pads being integral with underlying chip-level interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/922—Bond pads being integral with underlying chip-level interconnections
    • H10W72/9226—Bond pads being integral with underlying chip-level interconnections with via interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/923—Bond pads having multiple stacked layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/942—Dispositions of bond pads relative to underlying supporting features, e.g. bond pads, RDLs or vias

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
EP01307796A 2000-09-14 2001-09-13 Präzisions-Hochfrequenzkondensaotor auf einem Halbleitersubstrat Expired - Lifetime EP1189263B1 (de)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP07021795.5A EP1895568B1 (de) 2000-09-14 2001-09-13 Hochfrequenz-Kondensator auf einem Halbleitersubstrat
EP07021796.3A EP1895569B1 (de) 2000-09-14 2001-09-13 Präzisionshochfrequenz-Kondensator auf einem Halbleitersubstrat

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US661483 2000-09-14
US09/661,483 US6538300B1 (en) 2000-09-14 2000-09-14 Precision high-frequency capacitor formed on semiconductor substrate

Related Child Applications (4)

Application Number Title Priority Date Filing Date
EP07021795.5A Division EP1895568B1 (de) 2000-09-14 2001-09-13 Hochfrequenz-Kondensator auf einem Halbleitersubstrat
EP07021796.3A Division EP1895569B1 (de) 2000-09-14 2001-09-13 Präzisionshochfrequenz-Kondensator auf einem Halbleitersubstrat
EP07021795.5 Division-Into 2007-11-09
EP07021796.3 Division-Into 2007-11-09

Publications (3)

Publication Number Publication Date
EP1189263A2 EP1189263A2 (de) 2002-03-20
EP1189263A3 true EP1189263A3 (de) 2005-04-27
EP1189263B1 EP1189263B1 (de) 2010-11-24

Family

ID=24653791

Family Applications (3)

Application Number Title Priority Date Filing Date
EP07021795.5A Expired - Lifetime EP1895568B1 (de) 2000-09-14 2001-09-13 Hochfrequenz-Kondensator auf einem Halbleitersubstrat
EP07021796.3A Expired - Lifetime EP1895569B1 (de) 2000-09-14 2001-09-13 Präzisionshochfrequenz-Kondensator auf einem Halbleitersubstrat
EP01307796A Expired - Lifetime EP1189263B1 (de) 2000-09-14 2001-09-13 Präzisions-Hochfrequenzkondensaotor auf einem Halbleitersubstrat

Family Applications Before (2)

Application Number Title Priority Date Filing Date
EP07021795.5A Expired - Lifetime EP1895568B1 (de) 2000-09-14 2001-09-13 Hochfrequenz-Kondensator auf einem Halbleitersubstrat
EP07021796.3A Expired - Lifetime EP1895569B1 (de) 2000-09-14 2001-09-13 Präzisionshochfrequenz-Kondensator auf einem Halbleitersubstrat

Country Status (7)

Country Link
US (3) US6538300B1 (de)
EP (3) EP1895568B1 (de)
JP (2) JP3943879B2 (de)
CN (1) CN1182566C (de)
DE (1) DE60143510D1 (de)
SG (1) SG103315A1 (de)
TW (1) TW535251B (de)

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US6538300B1 (en) * 2000-09-14 2003-03-25 Vishay Intertechnology, Inc. Precision high-frequency capacitor formed on semiconductor substrate
US7151036B1 (en) * 2002-07-29 2006-12-19 Vishay-Siliconix Precision high-frequency capacitor formed on semiconductor substrate
US6605551B2 (en) * 2000-12-08 2003-08-12 Intel Corporation Electrocoating process to form a dielectric layer in an organic substrate to reduce loop inductance
US20060246621A1 (en) * 2002-02-14 2006-11-02 Intel Corporation Microelectronic die including thermally conductive structure in a substrate thereof and method of forming same
US20030151132A1 (en) * 2002-02-14 2003-08-14 Crippen Warren Stuart Microelectronic die providing improved heat dissipation, and method of packaging same
US6934136B2 (en) * 2002-04-24 2005-08-23 Texas Instrument Incorporated ESD protection of noise decoupling capacitors
US6815256B2 (en) * 2002-12-23 2004-11-09 Intel Corporation Silicon building blocks in integrated circuit packaging
US9530857B2 (en) * 2003-06-20 2016-12-27 Tessera Advanced Technologies, Inc. Electronic device, assembly and methods of manufacturing an electronic device including a vertical trench capacitor and a vertical interconnect
DE102004006484A1 (de) * 2004-02-10 2005-08-25 Infineon Technologies Ag Integrierte Schaltungsanordnungen mit ESD-festem Kondensator und Herstellungsverfahren
US7253522B2 (en) * 2004-06-02 2007-08-07 Avx Israel, Ltd. Integrated capacitor for RF applications with Ta adhesion layer
US7262139B2 (en) * 2004-06-02 2007-08-28 Avx Israel, Ltd. Method suitable for batch ion etching of copper
US8154105B2 (en) * 2005-09-22 2012-04-10 International Rectifier Corporation Flip chip semiconductor device and process of its manufacture
US7426102B2 (en) * 2006-05-01 2008-09-16 Vishay Intertechnology, Inc. High precision capacitor with standoff
US20070267719A1 (en) * 2006-05-18 2007-11-22 Jin Shown Shie Structure and manufacturing method of high precision chip capacitor fabricated on silicon substrate
US7589392B2 (en) * 2006-06-16 2009-09-15 Semiconductor Components Industries, L.L.C. Filter having integrated floating capacitor and transient voltage suppression structure and method of manufacture
US7579670B2 (en) * 2006-07-03 2009-08-25 Semiconductor Components Industries, L.L.C. Integrated filter having ground plane structure
JP5301108B2 (ja) * 2007-04-20 2013-09-25 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー 半導体装置
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JP5298559B2 (ja) * 2007-06-29 2013-09-25 富士通株式会社 半導体装置及びその製造方法
US8492872B2 (en) * 2007-10-05 2013-07-23 Taiwan Semiconductor Manufacturing Co., Ltd. On-chip inductors with through-silicon-via fence for Q improvement
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JP6461603B2 (ja) * 2012-11-02 2019-01-30 ローム株式会社 チップコンデンサ、回路アセンブリ、および電子機器
US9860985B1 (en) 2012-12-17 2018-01-02 Lockheed Martin Corporation System and method for improving isolation in high-density laminated printed circuit boards
GB2525774A (en) 2013-02-28 2015-11-04 Murata Manufacturing Co Semiconductor device
CN205081096U (zh) 2013-02-28 2016-03-09 株式会社村田制作所 Esd保护器件
JP5843045B2 (ja) 2013-02-28 2016-01-13 株式会社村田製作所 半導体装置
WO2014162795A1 (ja) * 2013-04-05 2014-10-09 株式会社村田製作所 Ｅｓｄ保護デバイス
WO2014181565A1 (ja) * 2013-05-07 2014-11-13 株式会社村田製作所 半導体装置およびｅｓｄ保護デバイス
JP5575309B1 (ja) * 2013-08-05 2014-08-20 有限会社 ナプラ 集積回路装置
KR101677738B1 (ko) * 2014-07-02 2016-11-21 조인셋 주식회사 Esd 내성을 가지는 폴리머 커패시터
US10217810B2 (en) * 2015-12-07 2019-02-26 Microchip Technology Incorporated Capacitor formed on heavily doped substrate
WO2018034067A1 (ja) * 2016-08-19 2018-02-22 株式会社村田製作所 キャパシタ付半導体装置
US10056461B2 (en) 2016-09-30 2018-08-21 Alpha And Omega Semiconductor Incorporated Composite masking self-aligned trench MOSFET
US10199492B2 (en) 2016-11-30 2019-02-05 Alpha And Omega Semiconductor Incorporated Folded channel trench MOSFET
WO2019138803A1 (ja) * 2018-01-10 2019-07-18 株式会社村田製作所 キャパシタ及びスナバ回路
KR102068806B1 (ko) * 2018-01-31 2020-01-22 삼성전기주식회사 커패시터 및 그 제조방법
US11674916B2 (en) * 2018-11-12 2023-06-13 Sciosense B.V. Gas sensor
US11715594B2 (en) * 2021-05-27 2023-08-01 International Business Machines Corporation Vertically-stacked interdigitated metal-insulator-metal capacitor for sub-20 nm pitch
JP2023049960A (ja) * 2021-09-29 2023-04-10 ローム株式会社 チップ部品
JP2023049961A (ja) * 2021-09-29 2023-04-10 ローム株式会社 チップ部品
JP7817807B2 (ja) * 2021-09-29 2026-02-19 ローム株式会社 チップ部品
CN114038805A (zh) * 2021-11-24 2022-02-11 苏州科阳半导体有限公司 一种半导体芯片的封装结构及封装方法
CN114551438B (zh) * 2022-02-24 2026-04-14 武汉华星光电半导体显示技术有限公司 显示面板
CN118841409B (zh) * 2024-09-20 2025-02-07 苏州凌存科技有限公司 一种半导体电容、阵列及其制备方法

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GB2060253A (en) * 1979-10-01 1981-04-29 Trw Inc MIS Capacitors
EP0412514A1 (de) * 1989-08-08 1991-02-13 Nec Corporation Kapazitätsvorrichtung
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US6621143B2 (en) 2003-09-16
US20030057517A1 (en) 2003-03-27
US6538300B1 (en) 2003-03-25
EP1189263A2 (de) 2002-03-20
JP2002176106A (ja) 2002-06-21
JP3943879B2 (ja) 2007-07-11
JP5016284B2 (ja) 2012-09-05
EP1895568A1 (de) 2008-03-05
JP2007005828A (ja) 2007-01-11
EP1895568B1 (de) 2014-07-16
US20030030125A1 (en) 2003-02-13
US6621142B2 (en) 2003-09-16
EP1189263B1 (de) 2010-11-24
EP1895569A1 (de) 2008-03-05
TW535251B (en) 2003-06-01
CN1346138A (zh) 2002-04-24
EP1895569B1 (de) 2013-06-12
CN1182566C (zh) 2004-12-29
SG103315A1 (en) 2004-04-29
DE60143510D1 (de) 2011-01-05

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