EP1161765A1 - Dispositif de traitement de substrats - Google Patents
Dispositif de traitement de substratsInfo
- Publication number
- EP1161765A1 EP1161765A1 EP00918768A EP00918768A EP1161765A1 EP 1161765 A1 EP1161765 A1 EP 1161765A1 EP 00918768 A EP00918768 A EP 00918768A EP 00918768 A EP00918768 A EP 00918768A EP 1161765 A1 EP1161765 A1 EP 1161765A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- opening
- process container
- substrate
- vacuum
- container
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67023—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Definitions
- the present invention relates to a device for treating substrates, in particular semiconductor wafers, with a process container having at least one opening, in which the opening can be closed from the outside through the substrate.
- a device for treating substrates is known, for example, from DE 198 59 470, which did not pre-publish and which goes back to the same applicant.
- This device has a process tank which is open at the top and through which a metal-containing electrolyte flows from bottom to top. On its way up, the electrolyte flows through an anode designed as an expanded metal.
- a semiconductor wafer to be plated with the metal in the electrolyte is held by a substrate holder over an upper edge of the process container so that a flow gap is formed therebetween.
- the electrolyte flowing through the process tank is brought to overflow between the upper edge of the process tank and the substrate and is brought into contact with the wafer.
- the substrate has to be raised and, if necessary, a rinsing-drying unit, as described in DE 198 59 469, which was published by the same applicant and is not prepublished, has to be moved under the wafer.
- a device for treating substrates of the type mentioned in which an opening of a process container is closed from the outside by a substrate to be treated.
- the opening is arranged in a vertical wall of the process container in order to achieve a uniform flow of treatment fluid onto the substrate during metal plating.
- the substrate After a plating process, the substrate has to be reloaded in a complex manner in order to be treated, for example rinsed, in a further process container.
- reloading there is a risk of damage to the substrate due to the necessary handling steps. Furthermore, there is a risk during reloading that the treatment fluid dries due to the required reloading time and thereby damages the substrate.
- the present invention is therefore based on the object of providing a device of the type mentioned at the outset which enables simple, homogeneous treatment of a surface of the substrate to be treated and reduces the risk of damage to the substrate between successive treatment steps.
- a second process container is provided adjacent to the first process container, one wall of which is at least partially the container wall of the first process container containing the opening.
- the device provides an electrode opposite the opening for generating an electric field between the electrode and the substrate.
- the electrode is preferably an electrode plate which enables the application of a homogeneous electric field.
- the electrode plate has openings for passing at least one fluid, in particular a drying fluid, in order to enable a targeted, vertical fluid flow onto the substrate opposite the electrode.
- the electrode is preferably an anode.
- At least one sealing element is provided on the electrode and / or on a container wall surrounding the opening.
- the sealing element preferably radially surrounds the electrode and projects axially over a surface of the electrode facing the opening.
- at least one treatment fluid which can be introduced into the process container is an electrolyte containing metal and / or an etching medium.
- FIG. 1 shows a schematic illustration of an embodiment of the device according to the invention
- Fig. 3 shows an alternative embodiment of the invention with two process containers.
- the substrate holder 4 has a main body 42 and a slide rod 43 attached to it.
- the shift rod 43 can also be formed in one piece with the main body 42.
- a central vacuum finger 44 is arranged in the main body 42 and is connected to a vacuum line 45.
- a pressure sensor is arranged in the vacuum line 45 and is used to determine whether a sufficient negative pressure is maintained between the vacuum finger 44 and the wafer 31 for holding the wafer.
- the vacuum finger 44 is laterally movable out of the main body 42 and retractable into it so that it is completely sunk in the main body 42.
- the main body 42 there are also a plurality of openings 47 radially surrounding the vacuum fingers 44, which are connected to a vacuum line 48 and can be subjected to negative pressure in order to pull the wafer 31 firmly against the base body 42 of the substrate holder 4.
- the vacuum lines 45 and 48 can be subjected to negative pressure separately from one another, although they can be connected to a common negative pressure source.
- the wafer 31 is introduced vertically through a side opening (not shown) of the second process container 60 via a wafer handling device and is received on the substrate holder 4 in the manner described above.
- the substrate holder 4 is then moved in the direction of the wall 9 until the wafer surface 40 comes into contact with the seal 32 at the opening 29 and the process containers 2 and 60 seal against one another.
- the wafer is processed in the manner described above and electrically contacted directly behind the seal 32 on its surface 40.
- the opening 29, which can be closed off by the wafer 31, could, for example, also be formed in a bottom wall of a treatment device, the respective treatment fluid inlets and outlets having to be adapted accordingly.
- the movement of the substrate holder and the anode arrangement could be controlled such that the anode plate and / or the wafer closes the opening 29 at all times.
- the anode arrangement can be designed as a combined washing / drying unit, via which the washing and drying fluid is directed onto the wafer opposite the anode plate 20.
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Electroplating Methods And Accessories (AREA)
Abstract
Cette invention concerne un dispositif de traitement de substrats, en particulier de plaquettes de semi-conducteur, qui comprend un récipient de traitement présentant au moins une ouverture pouvant, durant le traitement, être fermée de l'extérieur par le substrat. Avec ledit dispositif, on réalise un traitement simple et homogène d'une surface à traiter du substrat et on obtient une réduction du danger d'endommagement entre des phases successives de traitement, grâce à la présence d'un second récipient de traitement au voisinage du premier récipient de traitement, l'une des parois dudit second récipient étant au moins partiellement la paroi du premier récipient comprenant l'ouverture et l'ouverture pouvant être fermée du côté du premier récipient de traitement.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19911084A DE19911084C2 (de) | 1999-03-12 | 1999-03-12 | Vorrichtung zum Behandeln von Substraten |
DE19911084 | 1999-03-12 | ||
PCT/EP2000/001984 WO2000055888A1 (fr) | 1999-03-12 | 2000-03-08 | Dispositif de traitement de substrats |
Publications (1)
Publication Number | Publication Date |
---|---|
EP1161765A1 true EP1161765A1 (fr) | 2001-12-12 |
Family
ID=7900762
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP00918768A Withdrawn EP1161765A1 (fr) | 1999-03-12 | 2000-03-08 | Dispositif de traitement de substrats |
Country Status (6)
Country | Link |
---|---|
EP (1) | EP1161765A1 (fr) |
JP (1) | JP2002539334A (fr) |
KR (1) | KR20010103049A (fr) |
DE (1) | DE19911084C2 (fr) |
TW (1) | TW472316B (fr) |
WO (1) | WO2000055888A1 (fr) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10162191A1 (de) * | 2001-12-17 | 2003-06-18 | Wolfgang Coenen | Automatisches Vielkanalätzsystem |
JP2005126814A (ja) * | 2003-09-30 | 2005-05-19 | Seiko Epson Corp | 表面処理方法 |
DE102005020850B4 (de) * | 2005-05-02 | 2009-04-23 | Wolff, Thomas, Dipl.-Phys. | Dichtring für eine elektrochemische Zelle |
US9958782B2 (en) * | 2016-06-29 | 2018-05-01 | Applied Materials, Inc. | Apparatus for post exposure bake |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4783249A (en) * | 1987-06-26 | 1988-11-08 | Napco, Inc. | Electroplating apparatus with self-contained rinse water treatment |
JP2882416B2 (ja) * | 1989-12-19 | 1999-04-12 | 富士通株式会社 | 電解めっきによる金属素子の形成方法 |
JP2734269B2 (ja) * | 1991-12-26 | 1998-03-30 | 日本電気株式会社 | 半導体製造装置 |
JP3377849B2 (ja) * | 1994-02-02 | 2003-02-17 | 日本エレクトロプレイテイング・エンジニヤース株式会社 | ウエーハ用メッキ装置 |
DE19859466C2 (de) * | 1998-12-22 | 2002-04-25 | Steag Micro Tech Gmbh | Vorrichtung und Verfahren zum Behandeln von Substraten |
DE19859469C2 (de) * | 1998-12-22 | 2002-02-14 | Steag Micro Tech Gmbh | Vorrichtung und Verfahren zum Behandeln von Substraten |
DE19934298A1 (de) * | 1998-12-22 | 2000-07-06 | Steag Micro Tech Gmbh | Vorrichtung und Verfahren zum Behandeln von Substraten |
-
1999
- 1999-03-12 DE DE19911084A patent/DE19911084C2/de not_active Expired - Fee Related
-
2000
- 2000-03-08 JP JP2000606035A patent/JP2002539334A/ja active Pending
- 2000-03-08 KR KR1020017011532A patent/KR20010103049A/ko not_active Application Discontinuation
- 2000-03-08 EP EP00918768A patent/EP1161765A1/fr not_active Withdrawn
- 2000-03-08 WO PCT/EP2000/001984 patent/WO2000055888A1/fr not_active Application Discontinuation
- 2000-03-09 TW TW089104247A patent/TW472316B/zh not_active IP Right Cessation
Non-Patent Citations (1)
Title |
---|
See references of WO0055888A1 * |
Also Published As
Publication number | Publication date |
---|---|
TW472316B (en) | 2002-01-11 |
KR20010103049A (ko) | 2001-11-17 |
WO2000055888A1 (fr) | 2000-09-21 |
DE19911084A1 (de) | 2000-09-21 |
JP2002539334A (ja) | 2002-11-19 |
DE19911084C2 (de) | 2002-01-31 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
17P | Request for examination filed |
Effective date: 20010915 |
|
AK | Designated contracting states |
Kind code of ref document: A1 Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE |
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RBV | Designated contracting states (corrected) |
Designated state(s): AT DE |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN |
|
18D | Application deemed to be withdrawn |
Effective date: 20041001 |