經濟部智慧財1局員工消費合作社印製 472316 A7 ___________ B7 五、發明說明（1·) 本發明係關於一種處理基板之裝置，尤其是半導體晶 圓，其程序容器至少有一開口。 此類之裝置可參見屬同一申請人、未公佈之DE198 S9 47〇。此裝置具一向上開口之程序槽，而包含一金屬之電解 液從槽底向上流。在電解液向上流動過程中，經過一設計成 延伸柵之陽電極。一要以電解液内金屬鍍膜之半導體晶圓藉 一基板固持件’在程序容器之上邊緣如此地固定，使容器與 基板間形成一流動間隙》流經程序槽之電解液，於流經程序 容器上邊緣與基板間造成溢流，並與晶圓形成接觸。藉在陽 電極及晶圓間施加電壓，在電解液内所包含之金屬即沈積在 晶圓.上。 在此裝置，由於上述基板之沖流是發生在晶圓之外邊緣 範圍，尤其是在晶圓及程序容器上邊緣間之間隙範圍，較晶 圓之中央範園有較大之流動速度。由於此流動之不均勻性， 沉積在晶圓上之金屬也不均勻。在金屬沉積時所生成之氣 泡’通常是由電解液之流動帶走，但也可能聚集在相對而言 流動速度較慢之範圍，並在此阻止金屬繼續沉積。因電解液 流過與晶圓相對立設置之陽電極’此陽電極必須有夠大之流 動開口，此點對在陽電極及晶圓間產生均勻之電場極不利^ 為了晶圓下-步驟之·處理’例如清洗程岸，基板必須被舉出 並必須時被送入在晶圓下之清洗_脫乾單元，如在屬同一申 請人、未公佈之DE 198 59 469中所述之。 本發明之任務是，_-上述_之裝置，其使要加以 處理之基板表面有一簡單、均勻之處理。 (請先閱讀背面之注意事項再填寫本頁) 二 裝--------^----------Printed by the Consumer Cooperative of the 1st Bureau of the Ministry of Economic Affairs's Smart Finance 472316 A7 ___________ B7 V. Description of the Invention (1 ·) The present invention relates to a device for processing substrates, especially semiconductor wafers, and its program container has at least one opening. Such devices can be found in the unpublished DE 198 S9 47 0, which belongs to the same applicant. The device has a program slot which is open upwards, and an electrolytic solution containing a metal flows upward from the bottom of the slot. During the upward flow of the electrolyte, a positive electrode is designed to extend the grid. A semiconductor wafer with metal coating in the electrolyte is fixed on the upper edge of the program container by a substrate holder so that a flow gap is formed between the container and the substrate. The electrolyte flowing through the program tank is passed through the program. An overflow occurs between the upper edge of the container and the substrate, and makes contact with the wafer. By applying a voltage between the anode electrode and the wafer, the metal contained in the electrolyte is deposited on the wafer. In this device, because the impulse flow of the above substrate occurs in the outer edge range of the wafer, especially in the gap range between the wafer and the upper edge of the process container, it has a larger flow speed than the central circle of the wafer. Due to the non-uniformity of this flow, the metal deposited on the wafer is also non-uniform. The bubbles ' generated during metal deposition are usually carried away by the flow of the electrolyte, but may also accumulate in a region where the flow velocity is relatively slow and prevent the metal from continuing to deposit. Because the electrolyte flows through the anode electrode opposite to the wafer, the anode electrode must have a sufficiently large flow opening, which is extremely detrimental to generating a uniform electric field between the anode electrode and the wafer. • Processes, such as cleaning processes, substrates must be listed and, if necessary, sent to a cleaning_dehydration unit under the wafer, as described in the same applicant, unpublished DE 198 59 469. The object of the present invention is to provide a simple and uniform treatment of the surface of a substrate to be treated. (Please read the precautions on the back before filling out this page) 2 Pack -------- ^ ----------
本紙張尺度適用中國國家標準(CNS)A4規格(210 X 2S7料)· 發明說明（2·) 此任務依本發明是以下述方式加以解決：在上述描述之 裝置’在處理時程序容器之開口可從外由基板加以封閉。從 外由基板將程序容器開口封閉，是以簡單之方式做到，即只 有基板面向程序容器之表雜—在程序容器狀處理流ff 接觸，而基板其他之範圍則被隔離。另外，也造成侧向、主 要是平行於基板表面所延伸之基板的向外流動。如此，在基 板表面上形成均勻之流)動，因而有均勻之處理。 在一特別偏好之發明實施形式中，開口是設計在程序容 器主要是垂直之壁面内，如此，在以處理流體充填程序容器 時，基板完全被處理流體包圍，因而避免氣泡之捲入。在 理時所產生之氣體，因為基板是垂直設置’立刻會向上排 出’不會被捕捉進相對流動較緩之區域。除此之外，由於此 垂直設置，在基板脫乾時可使用馬拉哥尼效應。 為保證基板能有良好且緊密的關閉開口，在開口周圍設 有密封元件。此密封元件最好有側凹及密封唇，其根據一發 明實施形式，疋由形成密封元件之密封材料之銳切而構成。 在一較為偏好之發明實施形式中，設有一接觸元件，其 使基板面向程序容器之表面有電接觸’此接觸元件最好延伸 進入密封元件之側凹範圍’以保證基板在邊緣範園有良好及 安全之接觸。 在一較為偏好之發明實施形式中，本裝置設有與開口相 對立之電極，用以在電極及基板間產生一電場。因此電極最 好是一電極板’其可造成均勻之電場。在一較偏好之實施形 式中’電極板上設有許多開口，用以讓至少一流體，尤其σ 經濟部智慧財產局員工消費合作社印製 472316 五、發明說明（3.) 脫乾=體^通，用以在與電極相對立之基板上刻意形成垂直 心流體流動。電極最好是陽電極。 較偏好之發明實施形式1極可朝開口運動，並 為了在某些情況下調整電極與基板間之距離。 1容器之開口’备不由基板來封閉時，最妤可藉由電極從 内封閉，使程序容器與外界環境隔絕。 —為使電極能緊密地封閉開口，在電極及/或包園開口之 ，器土，上至）5又有—_、封元件。為預防電極所產生之電場 又到破壞並防止基板侧之流體流動受到破壞，密封元件最 好在徑向包®電極，並在軸向伸“向_之電極表面。 在本裝置之-特殊實施料中，裝置是用於基板之金屬 鍍膜’至少是-可被導入程序容器之處理流體，是包含金屬 之電解液及/或一蝕刻媒質。 _在一特別有利之發明實施形式中，與程序容器相鄰設有 第二程絲器，其之-裝至少部分是帛—程雜器包含開 孔之容器壁面。藉設置第二程序容器，其與第-程序容器包 含開口之壁面’當基板在第一程序容器内被處理時，即被設 置於第二程序容器’並在第一程序容器處理後，不必轉置即 可於第二容器進行處理。若基板不封閉程序容器内之開口， 開口最好是由電極加以封閉，以再次分隔此二程序容器。藉 此特殊之二程序容器配置，以簡單方式使基板在二分隔之^ 序空間内受處理，而不必進行繁複的基板上下料或是驅動程 序容器。藉設置二分隔之程序空間’另外也降低了媒質之運 送。 令紙跟人没週用1f國國豕標準（CNS>A4規格（210 X 297公釐） -6- !! ^ — — — — — I — . (請先閱讀背面之注意事項再填寫本頁) 472316 A7 _B7 I " ____ ......... ....... —...........- - 五、發明說明（4.) 第二程序容器最好是一清洗_及或脫乾室及/或表面調 節室。 在一偏好之發明實施形式中，基板是由一基板固持件固 定’基板固持件具至少一相對基板固持件主體可運動之真空 爪手。設置相對於基板固持件主體可運動之真空爪手，使基 板可對基板固持件主體維持一段距離進行上料及下料，因而 基板操作裝置可進入基板及基板固持件主體間。為得到安全 及均勻之抓取’真S爪手取好是設置在面向基板之主體表面 中央。為使基板固持件主體能與基板進行接觸，真空爪手最 好可沈入主體内。 在一偏好之發明實施形式中，在與真空爪手相連接之真 空管路内設有一壓力感測器，以通知載送基板至基板固持& 之晶圓操作裝置，基板何時被安全固定在真空抓手上。 基板固持件最好除了真空爪手外’在主體面向基板之表 面設好_定之錢開口，讓絲樣大之細穩定的固 足在基板固持件上。此時，真空開口最好在徑向包園住真空 爪手。真空開口最好可施加與真空爪手真空源相異之真空。 依在一偏好之發明實施形式中，在基板固持件上至少設 | H彳结⑽真之冑封树，肋雜毅細有: | 良好之街封。基板固持件上之密封元件最好是彈性的，並位 | 於開口之周園’尤其是密封唇對面，使基板在此範圍有小的 | 運動空間，以防止基板在開口周圍之密封元件及基板固持件 | 間受到傷害’尤其是被壓碎。此二密封相對立之設計，另外 | 的好處疋’壓力會直接垂直經由基板傳送出，而不會在基板 1[^_^ 本紙張尺度適用中— 國國家i?Bs)A4規^·^。x 297轉）—---^_____ ------------裝---------^訂----------级 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印t 472316 B7 五、發明說明（ 6.) 垂直。陽電極板20是一封閉之板，具一平面、面向右侧壁 面9之頂面21。在左侧壁雨8及陽電極板2〇背面間設有一 〇形％ 23形式之密封’其被固定在左·面8上或是陽電 極板20之背面上。陽電極板2〇在徑向被一 〇形環25包圍， 其在向右侧壁面9方向突出於陽電極板2〇之表面21。圖號 26標示-密封囊，其左側與移動桿^相連，右側則與容器 10之第一壁面8相連。 、右侧土面9上有-中央開口 29，其尺寸較要加以處理 =基板’例如半導體晶圓.31尺寸為小。開口 29之周圍由一 ^封32構成’在目二村板峰歸32轉接在右侧 土面9《内周邊上，且有—向開口 29彎曲之表面％。在密 2幻與表面33相對立侧，設計有一侧凹％，其可 歡封32之材料銑切而成。 接觸面9外侧’犧細定有—具接觸彈簧形式之 接觸蹲37。_元件37延伸進 :圍=範園之電接觸。此晶圓31表面40電接^ 因而程序容==:^綺32間之梅園之外， 上之=,=^件4承載’可與之運動至裡序容器 Μ在匕位置晶®131將在側壁面9内之開口 29 封閉’另外可運動離開程 z 和29 不會封閉開口 29。 土一么置，在此位置晶圓 基板固持件4具—主體42及__其上之移動样This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 2S7 material). · Description of the invention (2 ·) This task is solved according to the present invention in the following way: the device described above 'the opening of the program container during processing Can be closed from the outside by the substrate. The sealing of the opening of the program container by the substrate from the outside is done in a simple manner, that is, only the substrate faces the surface of the program container—in the program container-like processing stream ff, the other areas of the substrate are isolated. In addition, it also causes outward flow of the substrate which extends laterally, mainly parallel to the substrate surface. In this way, a uniform flow is formed on the surface of the substrate, so that there is a uniform treatment. In a particularly preferred embodiment of the invention, the opening is designed in the wall of the process container, which is mainly vertical. In this way, when the process container is filled with the process fluid, the substrate is completely surrounded by the process fluid, thereby avoiding the inclusion of air bubbles. The gas generated during the process, because the substrate is placed vertically, will immediately be discharged upwards, and will not be captured into a relatively slow flow area. In addition, due to this vertical arrangement, the Maragoni effect can be used when the substrate is dried. To ensure that the substrate can close the opening well and tightly, a sealing element is provided around the opening. This sealing element preferably has undercuts and sealing lips, and according to an embodiment of the invention, it is constituted by a sharp cut of the sealing material forming the sealing element. In a preferred embodiment of the invention, a contact element is provided, which makes the surface of the substrate facing the program container have electrical contact. 'This contact element preferably extends into the undercut area of the sealing element' to ensure that the substrate has a good edge edge. And safe contact. In a preferred embodiment of the invention, the device is provided with an electrode opposite the opening for generating an electric field between the electrode and the substrate. Therefore, the electrode is preferably an electrode plate 'which can cause a uniform electric field. In a preferred implementation form, the 'electrode plate is provided with many openings for at least one fluid, especially σ printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. 472316 5. Description of invention (3.) It is used to intentionally form a vertical center fluid flow on a substrate opposite to the electrode. The electrode is preferably a positive electrode. In the preferred embodiment of the invention, the pole 1 can be moved toward the opening, and the distance between the electrode and the substrate is adjusted in some cases. 1 When the container's opening is not closed by the substrate, the electrode can be closed from the inside by the electrode to isolate the program container from the outside environment. —In order to make the electrode close the opening tightly, the electrode and / or the opening of the packet garden, the earth, up to) 5 have —_, sealing elements. In order to prevent the electric field generated by the electrode from damaging and prevent the fluid flow on the substrate side from being damaged, the sealing element is preferably wrapped in the radial direction of the electrode, and extends in the axial direction toward the electrode surface. Special implementation in this device In the material, the device is a metal coating for a substrate. 'At least-a processing fluid that can be introduced into a process container, is an electrolyte containing a metal and / or an etching medium. _ In a particularly advantageous embodiment of the invention, it is related to the process The container is provided with a second threader adjacent to it, at least in part-the container wall surface containing openings. By providing a second program container, the second program container is provided with the wall surface of the first program container including an opening. When processed in the first program container, it is set in the second program container 'and after the first program container is processed, it can be processed in the second container without transposition. If the substrate does not close the opening in the program container, The opening is preferably closed by the electrode to separate the two program containers again. With this special two program container configuration, the substrate is processed in a two-separated sequence space in a simple manner, and The complicated substrate loading and unloading or driver container must be carried out. By setting up a two-separated program space, it also reduces the transport of media. It makes paper useless for everyone. 1f National Standard (CNS > A4 Specification (210 X 297) Mm) -6- !! ^ — — — — — I —. (Please read the notes on the back before filling out this page) 472316 A7 _B7 I " ____ ......... .... ... —..............--5. Description of the invention (4.) The second program container is preferably a cleaning and / or dehydration chamber and / or a surface conditioning chamber. In an embodiment of the invention, the substrate is fixed by a substrate holder. The substrate holder has at least one vacuum claw hand movable relative to the substrate holder main body. A vacuum claw hand movable relative to the substrate holder main body is provided so that the substrate can be moved. The substrate holder main body is maintained at a distance for loading and unloading, so the substrate operation device can enter between the substrate and the substrate holder main body. In order to obtain a safe and uniform grasp, the real S-claw is taken on the surface of the main body facing the substrate. Center. In order for the main body of the substrate holder to contact the substrate, The vacuum gripper is preferably sunk into the main body. In a preferred embodiment of the invention, a pressure sensor is provided in the vacuum line connected to the vacuum gripper to notify the wafer carrying substrate to the substrate holding & The operating device, when is the substrate securely fixed on the vacuum gripper. The substrate holder should preferably be set on the surface of the main body facing the substrate in addition to the vacuum claws, so that the silk pattern can be firmly fixed on the substrate. Holder. At this time, the vacuum opening is best to hold the vacuum claw hand in the radial envelope. The vacuum opening can preferably apply a vacuum different from the vacuum source of the vacuum claw hand. In a preferred embodiment of the invention, the substrate Hold at least | H 彳 结 ⑽ 真 胄 封 树, the ribs are as follows: | Good street seal. The sealing element on the substrate holder is preferably elastic, and is located in the opening circle | especially opposite the sealing lip, so that the substrate has a small area in this area | moving space to prevent the sealing element and the substrate around the opening Damaged substrate holders | particularly crushed. The opposite design of these two seals, in addition, the benefits of 疋 'pressure will be directly transmitted through the substrate, and not on the substrate 1 [^ _ ^ This paper size is applicable — country i? Bs) A4 regulations ^ · ^ . x 297 turns) ------- ^ _____ ------------ install --------- ^ order ---------- grade (please read the back first Please fill in this page for the matters needing attention) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs t 472316 B7 V. Description of Invention (6) Vertical. The anode electrode plate 20 is a closed plate having a flat top surface 21 facing the right-side wall surface 9. Between the left wall rain 8 and the back surface of the positive electrode plate 20, there is provided a seal in the form of 10% 23 'which is fixed to the left surface 8 or the back surface of the positive electrode plate 20. The anode electrode plate 20 is surrounded by an O-ring 25 in the radial direction, and it protrudes beyond the surface 21 of the anode electrode plate 20 in the direction of the right wall surface 9. Reference numeral 26 designates a sealed capsule, the left side of which is connected to the moving rod ^, and the right side is connected to the first wall surface 8 of the container 10. The right soil surface 9 has a central opening 29, the size of which is greater than the substrate to be processed = substrate ', such as a semiconductor wafer. 31 is smaller in size. The periphery of the opening 29 is composed of a seal 32 'at Mejicun Banfeng Gui 32 transferred to the right of the soil surface 9 "on the inner periphery, and there is-% of the surface curved toward the opening 29. On the side opposite the surface 33 and the surface 33, a concave side is designed, which can be milled from the material of the seal 32. The outer side of the contact surface 9 is determined—a contact squat 37 in the form of a contact spring. _Element 37 extends into: Wai = Fan Yuan's electrical contact. The surface 40 of this wafer 31 is electrically connected ^ Therefore, the program capacity ==: ^^ 32 outside of the plum garden, the above =, = ^ pieces 4 carry 'can be moved to the inner container Μ at the position of the crystalline wafer 131 will The opening 29 in the side wall surface 9 is closed. In addition, the movable movements z and 29 do not close the opening 29. When the soil is placed, there are 4 wafer substrate holders at this position—the main body 42 and the moving sample on it.
I Μ--------訂---------^ (請先閱讀背面之注意事項再填寫本頁) A7I Μ -------- Order --------- ^ (Please read the notes on the back before filling this page) A7
472316 五、發明說明（7·) 43。移動桿43也可與主體42 —體設計而成。在主體幻内， 中央設置有真空爪手44，其與真空管路45相接。在真空管 路45内設置有-未示出之壓力感測器，可偵測出真空爪手 44及晶圓31間是否有足夠之真空以固定晶圓。 真空爪手44可在侧向從主體42運動出，再又回至主體 内’因此可完全進入主體42内。 ^ 在主體42内另外設置有多個被真空爪手44在徑向包園 之開口 47 ’其與真空管路48相接，並可施加真空，用以將 晶圓31穩固的吸引到基板固持件4之本體似上。真空管路 45及48可個別施加真空，雖然二者可能是與同一真空 從圖二可以看出，在主體42表面面向晶圓31之邊緣範 ®内設有一槽50，其内裝有- Ο形環5卜〇形環51徑向 包圍真空開π 47,因而在晶圓31及基板固持件4之主體42 間有一 1好、徑向密封之真空範圍。〇形環51位於程 器2側壁面9上之密封32範圍内。 、 以下藉圖一說明晶圓31在此裝置内受處理之情形。 首先，基板固持件4從程序容器2退出並維持一段距 ，。真空爪手44從基板固持件4之主體42伸出，並抓取晶 圓3卜晶圓是被-未示出之操作裝置送進基板固持件4範 園内。由於真空爪手44退出，操作裝置可運動至主體似 與基板31所形成之㈣内，並將基板傳給真空爪手44。 在真空爪手44抓取基板後，操作裝置放鬆，並從晶圓 輿基板固持件4之主體⑽間之範園運動出來。然後真空 ^紙張尺度適用中_ “準（CNS)A4規格⑵0;公愛） -10472316 V. Description of the invention (7 ·) 43. The moving rod 43 may also be designed integrally with the main body 42. In the main body, a vacuum claw hand 44 is provided in the center, which is connected to the vacuum pipe 45. A pressure sensor (not shown) is provided in the vacuum tube 45 to detect whether there is sufficient vacuum between the vacuum gripper 44 and the wafer 31 to fix the wafer. The vacuum gripper 44 can move laterally out of the main body 42 and back into the main body 'so that it can fully enter the main body 42. ^ In the main body 42, a plurality of openings 47 in the radial packing circle by the vacuum claw hand 44 are provided, which are connected to the vacuum pipe 48, and a vacuum can be applied to firmly attract the wafer 31 to the substrate holder. The body of 4 looks like the above. Vacuum lines 45 and 48 can be individually applied with vacuum, although the two may be the same vacuum. As can be seen from Fig. 2, a groove 50 is provided in the edge of the surface of the main body 42 facing the wafer 31, and the shape is -0 The ring 5 and the B-shaped ring 51 radially surround the vacuum opening π 47, so there is a good, radially sealed vacuum range between the wafer 31 and the main body 42 of the substrate holder 4. The o-ring 51 is located within the range of the seal 32 on the side wall surface 9 of the device 2. The following describes the situation in which the wafer 31 is processed in this device with reference to FIG. First, the substrate holder 4 is withdrawn from the program container 2 and maintained for a certain distance. The vacuum claw hand 44 is extended from the main body 42 of the substrate holding member 4 and grasps the wafer 3. The wafer is fed into the substrate holding member 4 by an operation device (not shown). Since the vacuum claw hand 44 is withdrawn, the operation device can move into a frame formed by the main body and the substrate 31, and transfer the substrate to the vacuum claw hand 44. After the substrate is grasped by the vacuum claw hand 44, the operation device is relaxed and moves out of the wafer garden and the main body of the substrate holder 4. Then vacuum ^ paper size is applicable _ "quasi (CNS) A4 size ⑵0; public love) -10
‘展-----：1_—訂---------線 <請先閱讀背面之注意事項再填寫本頁) 116‘Show -----: 1_—Order --------- line < Please read the notes on the back before filling this page) 116
五、發明說明（ 8.) c\i 經濟部智慧財產局員工消費合作社印製 7 4 爪手44又再進入基板固持件4之主體心。 31之一侧與主體42接觸好t僉答 %日曰圓 μ 42接觸’經真空皆路48在真空開口 47上 施加真空’似萑保晶圓31被穩定固持在主體42上。 、然後’基板固持件4勒至程序槽2上，直到晶圓Μ ^表面40與在侧壁面9上之密封32接觸，賊在側壁面9 内^開口 29被關閉及密封。同時，晶圓31表面40在其邊 緣範圍與接觸元件37之接觸唇39接觸。 、 紐’程序容器2被包含金屬之電解液充填，其中晶圓 31 <表面40被電解液均勻包園。然後，在陽電極板2〇及 電接觸之晶圓31間施加電壓’以使電解液内所包含之金屬 析出至晶圓31表面40上。此時，電解液被連續經開口 u 導入程序容器2内，並經開口 14從程序容器2流出。在有 足夠之金屬析出後，電解液經開口 11從程序容器2排出。 在基板固持件4從程序容器2退出時，陽電極板20經程序 容器2運動至側壁面9，直到密封25與側壁面9内側接觸。 如此’程序容器2之開口 29被從内封閉，而不潔物不能進 入程序容器2内。 在基板固持件4在程序槽2内運動離開前’可另外進行 晶圓31之清洗及/或脫乾：為清洗晶圓31，清洗流體經開〇 11或另一獨立之開口被導入程序容器2内，晶圓31之表面 40被清洗。為將晶圓31脫乾，慢慢放出清洗液體’其中， 在清洗液體表面加上溶劑之前，例如IPA-層，可依馬拉哥尼 原理進行脫乾。 除此之外，可在陽電極板20内設置開口，以導入脫乾 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -11 - (請先閱讀背面之注意事項再填寫本頁) 訂---------線 472316 經濟部智慧財產局員工消費合作、社印製 A7 B7 五、發明說明（9·) 流體(以後麵三切綱）。然後在排出清洗流體後，陽電 極板2G運動1_-與基板31彳_近之位置，並經帛口導入脫 乾液fc，例如Ν2至基板31之表面4〇上，以將之脫乾。 隨後基板固持件4運動離開側壁面9，使晶圓31可從 基板固持件4中取出。 圖三顯示另—發明實施形式，其中金屬鍍膜裝置1是設 計成垂直之雙程序室。只要可能’圖三中能使用之標號與圖 一之實施例者相同，以標示相同或相似之元件。 裝置1有-第-程序容器2，其基本上與圖—中之程序 容器2相同，另外有—第二程序容器6〇。 程存容H 2有-紐面6 ’上魏7及左及右侧壁面8 及9。在底壁面6内有一排放開口幻，其與管路纪相連。 在侧壁面8内底壁面6範圍中設有一輸入開口 64，其 與輸入管路65相連。在侧壁面8内另外在上壁面7細設 有一溢流開口 66，其與管路67相連。 陽電極組合3之移動桿19延伸穿過在侧壁面8内之中 央開口 17，可在程序容器2内移動。 在移動桿19内設有一軸向延伸之管路7〇，其與一未示 出之流體源相連。 * ： 陽Ί：極組合3之陽電極板20有在徑向向外延件之管路 72 ’其與移動桿19内之管路70相連。管路72與在面向侧 ，面9之陽電極板20表面％内之開口 ％相連。經管路％， 巨路72及開口 74可將流體，例如N2穿過陽電極组合3。 由開口所形成之面積，與陽電極板2〇之表面％整個面積相 國家標準（CNSXA4 規格（210 X 297 公釐)·一 --- -12- (請先閲讀背面之注意事項再填寫本頁) -裝•丨！丨丨，訂------ 472316 A7 B7 經 濟 部 智 慧 財 產 局 員 工 消 費 合 作 社 印 製 五、發明說明（10·) 比，非常的小，因此陽電極板20可被看成主要是封閉之板。 如同第一實施例，陽電極板20在徑向被一 〇形環25包圍。 同樣，也設置有一密封囊26，其一侧與移動桿19，另一侧 則與容器10之第一壁面8相連， 侧壁面9又再具有一開口 29，其周圍由密封32決定。 開口 29也是可從外由晶圓31及從内由陽電極板2〇封閉。 與第一程序容器2相鄰，設有一程序容器6〇 ,其左侧 壁面是由包含開口 29之第一程序容器2之右側壁面9構 成。第二程序容器60有一底壁面76、上壁面77、左側壁面 9及右侧壁面78。在底壁面76内設有一共通之輸入/輸出開 口 81，與管路82相連。若不用共通之輸入輸出開口，當 然也可設置獨立之二開口。 在上壁面77内設有一開口 84，其與管路85相連。 在私序容器60之右侧壁面78内設有一中央開口 87， 基板載具4之移動桿43穿越其間。在91顯示一密封囊，其 一侧與基板载具4之移動样43，另一侧則與程序容器6〇 了 右侧壁面78相連。 ° ^ 在第二程序容器60之左侧壁面9上或内設置指向第二 程序容器60之嘴嘴9〇，處理流體，例如清洗液體，尤其了 去離子水可經之導入第二程序容器6〇。除了單個噴、^ 可使用多個噴嘴。 、 也 基板固持件4之構造大致與圖一中基板固持件4之構造 相同，只是真空爪手44之形狀及真空開口 47之形狀與圖^ 中所示之形狀不同。 、 表紙張尺度適用中國國家標規格（210 X 297公釐_丁 -13 -------------I 裝>丨|-----^ ---------線 « (請先閱讀背面之注音？事項再填寫本頁) 叫16 A7 B7 五、發明説明（11, .此垂直雙程序室之工作流程如下： 晶圓31藉一晶圓操作裝置，垂直經一未示出之，第一 私序容器60之侧向開口，被送入此容器内，並以上述之方 式’被基板固持件4接收。隨後基板固持件4向壁面9運動^ 直到晶圓表面40開口 29上之密封32 _而且程序容器2 及6〇相互封閉。同時，晶圓以上述方式直接在密封32後， 在表面40上有電接觸。 。，程序室封閉後，經開口 64將含有金屬之電解液導入 程序容器2，直到電解液經開口秘溢流出。之後，在晶圓 31及陽電極板20間施加電壓’使金屬沉積在 : 如上。在沉積過程結束後，電解液經開口 62二^ 出0 隨後基板固持件4與在其内被固持之晶圓3 j從程序室 2及60共同之壁面9運動離開。同時陽電極组3向壁面9 方=運動，直到〇形環25與共同之壁面9接觸，而且二程 序容器2及60被陽電極組3相互封閉。 此時將⑺洗流體，例如去離予水，經噴嘴及/或開 經濟部智慧財產局員工消費合作社印製 口 81導入第一程序容器6〇，以清洗晶圓。在清洗完後，將 去離子水排出。為將晶圓脫乾，將脫乾遂體，例如N2，經 陽電極内之開π導人程序容器6G，並吹向晶圓。為了脫乾， 陽電極板及晶圓31間之轉可略域小，持基板固持件 4向壁面9運動。 另-個脫乾方法是應用馬拉哥尼原理。為此，在經開口 84排出去離子水之前，從上將溶劑，例如IPA，導入程序容 本紙張尺度適用 f CNS ) A4MM- ( 21〇X297iij-----'~~~ -- -14- 472316 A7V. Description of the invention (8) c \ i Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 7 4 The gripper 44 enters the main body of the substrate holder 4 again. One side of 31 is in good contact with the main body 42.% Japanese circle μ 42 is contacted ', and a vacuum is applied to the vacuum opening 47 via the vacuum path 48. The wafer 31 is stably held on the main body 42. Then, the substrate holding member 4 is drawn to the program groove 2 until the wafer 40 surface 40 contacts the seal 32 on the side wall surface 9, and the thief opens 29 in the side wall surface 9 and is sealed. At the same time, the surface 40 of the wafer 31 is in contact with the contact lip 39 of the contact element 37 at its edge. The process container 2 is filled with an electrolyte containing a metal, and the wafer 31 < surface 40 is uniformly covered by the electrolyte. Then, a voltage 'is applied between the anode electrode plate 20 and the wafer 31 in electrical contact to cause the metal contained in the electrolytic solution to be deposited on the surface 40 of the wafer 31. At this time, the electrolytic solution is continuously introduced into the program container 2 through the opening u, and flows out from the program container 2 through the opening 14. After sufficient metal has precipitated, the electrolyte is discharged from the program container 2 through the opening 11. When the substrate holder 4 is withdrawn from the program container 2, the anode electrode plate 20 moves to the side wall surface 9 through the program container 2 until the seal 25 contacts the inside of the side wall surface 9. In this way, the opening 29 of the program container 2 is closed from the inside, and impurities cannot enter the program container 2. The substrate 31 can be cleaned and / or de-dried before the substrate holder 4 moves in the program slot 2. In order to clean the wafer 31, the cleaning fluid is introduced into the program container through the opening 11 or another independent opening. In 2, the surface 40 of the wafer 31 is cleaned. In order to dry the wafer 31, the cleaning liquid is slowly released. Before the solvent is added to the surface of the cleaning liquid, such as the IPA layer, it can be dried according to the Maragoni principle. In addition, an opening can be provided in the anode electrode plate 20 to introduce the dry paper. The size of the paper is applicable to China National Standard (CNS) A4 (210 X 297 mm) -11-(Please read the precautions on the back before (Fill in this page) Order --------- line 472316 Employees' cooperation in the Intellectual Property Bureau of the Ministry of Economic Affairs, printed A7 B7 V. Invention Description (9 ·) Fluids (three-cut outline). Then, after the cleaning fluid is discharged, the positive electrode plate 2G moves 1_- near the substrate 31 彳 _, and introduces a dehydration solution fc through the mouth, for example, N2 to the surface 40 of the substrate 31 to dry it. The substrate holder 4 is then moved away from the side wall surface 9 so that the wafer 31 can be taken out of the substrate holder 4. Fig. 3 shows another embodiment of the invention, in which the metal coating device 1 is a double process chamber designed to be vertical. Wherever possible, the same reference numerals as in the embodiment of Fig. 1 can be used to indicate the same or similar elements. The device 1 has a first program container 2, which is basically the same as the program container 2 in the figure, and additionally has a second program container 60. Cheng Cunrong H 2 has-button surface 6 ′ Shang Wei 7 and left and right wall surfaces 8 and 9. There is a discharge opening in the bottom wall surface 6 which is connected to the pipeline. An input opening 64 is provided in the range of the bottom wall surface 6 in the side wall surface 8 and is connected to the input pipe 65. An overflow opening 66 is further provided in the side wall surface 8 on the upper wall surface 7 and is connected to the pipe 67. The moving rod 19 of the anode electrode assembly 3 extends through a central opening 17 in the side wall surface 8 and is movable in the program container 2. An axially extending pipe 70 is provided in the moving rod 19 and is connected to a fluid source not shown. *: Impotence: The anode electrode plate 20 of the pole combination 3 has a pipe 72 ′ extending radially outward, which is connected to the pipe 70 in the moving rod 19. The tube 72 is connected to the opening% within the surface% of the positive electrode plate 20 of the surface 9 on the side. Via the pipeline, the giant road 72 and the opening 74 can pass a fluid, such as N2, through the anode electrode assembly 3. The area formed by the opening is in accordance with the national standard (CNSXA4 specification (210 X 297 mm)) of the surface area of the anode electrode 20 (the entire area). Page)-Equipment • 丨! 丨 丨, Order ------ 472316 A7 B7 Printed by the Consumers ’Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs 5. The invention description (10 ·) is very small, so the anode electrode plate 20 can It is considered to be mainly a closed plate. As in the first embodiment, the anode electrode plate 20 is surrounded by a 10-ring 25 in the radial direction. Similarly, a sealing bag 26 is also provided, one side of which is connected to the moving rod 19, and the other side It is connected to the first wall surface 8 of the container 10, and the side wall surface 9 has an opening 29, the periphery of which is determined by the seal 32. The opening 29 can also be closed from the outside by the wafer 31 and from the inside by the anode electrode plate 20. The first program container 2 is adjacent to each other and is provided with a program container 60. The left side wall surface is composed of the right side wall surface 9 of the first program container 2 including the opening 29. The second program container 60 has a bottom wall surface 76, an upper wall surface 77, The left wall surface 9 and the right wall surface 78. A total of The input / output opening 81 is connected to the pipeline 82. If a common input / output opening is not used, it is of course possible to provide two independent openings. An opening 84 is provided in the upper wall 77 and is connected to the pipeline 85. In private order A right side wall 78 of the container 60 is provided with a central opening 87 through which the moving rod 43 of the substrate carrier 4 passes. A sealed bag is shown at 91, one side of which is in line with the moving pattern 43 of the substrate carrier 4, and the other side is The program container 60 is connected to the right wall surface 78. ° ^ On the left wall surface 9 of the second program container 60, a mouth 90 pointing to the second program container 60 is provided, and the processing fluid, such as a cleaning liquid, is particularly Ionized water can be introduced into the second program container 60. In addition to a single spray, multiple nozzles can be used. Also, the structure of the substrate holder 4 is substantially the same as that of the substrate holder 4 in FIG. 1, except that the vacuum claw hand 44 The shape of the vacuum opening 47 and the shape of the vacuum opening 47 are different from those shown in Figure ^. The paper size applies the Chinese national standard (210 X 297 mm_ 丁 -13 ------------- I install > 丨 | ----- ^ --------- line «(Please read the note on the back first ? Please fill in this page again) Call 16 A7 B7 V. Description of the invention (11,. The working process of this vertical dual program room is as follows: Wafer 31 borrows a wafer operation device, passes a vertical one not shown, the first private The side opening of the sequential container 60 is sent into this container and is' received by the substrate holder 4 in the manner described above. Then the substrate holder 4 moves toward the wall 9 ^ until the seal 32 on the wafer surface 40 opening 29 _ The program containers 2 and 60 are closed to each other. At the same time, the wafer has electrical contact on the surface 40 directly after sealing 32 in the manner described above. . After the program chamber is closed, the electrolyte containing metal is introduced into the program container 2 through the opening 64 until the electrolyte overflows through the opening. After that, a voltage is applied between the wafer 31 and the anode electrode plate 20 to deposit the metal as above. After the deposition process is completed, the electrolyte is discharged through the opening 62, and then the substrate holder 4 and the wafer 3 j held therein move away from the wall surface 9 common to the process chambers 2 and 60. At the same time, the positive electrode group 3 moves toward the wall surface 9 until the 0-ring 25 contacts the common wall surface 9 and the second-stage containers 2 and 60 are closed to each other by the positive electrode group 3. At this time, the cleaning fluid, such as deionized water, is introduced into the first program container 60 through the nozzle and / or the printing port 81 of the consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs to clean the wafer. After cleaning, drain the deionized water. To dry the wafer, a desiccant, such as N2, is introduced into the program container 6G through the opening in the anode electrode and blown toward the wafer. In order to dry, the rotation between the anode electrode plate and the wafer 31 may be slightly small, and the substrate holder 4 is moved toward the wall surface 9. Another way to get rid of it is to apply the Maragoni principle. For this reason, before discharging the deionized water through the opening 84, the solvent, such as IPA, is introduced into the program. The paper size is suitable for CNS) A4MM- (21〇X297iij ----- '~~~--14 -472316 A7
(請先閲讀背面之注意事項再填寫本頁) -訂 線丨. » ^^1 - - - - ΐ —ill* 15 經濟部智慧財產局員工消費合作社印製 年？月》0曰修，更正/補充 A7 B7 補无丨 五、發明說明（I3·) 元件符號說明 1 金屬鍍膜裝置 33 表面 2 程序容器 35 侧凹 3 陽電極組合 37 接觸元件 4 基板載具 39 接觸唇 6 底壁面 40 表面 7 上壁面 42 主體 8 左侧壁面 43 移動桿 9 右侧壁面 44 真空爪手 10 程序空間 45 真空管路 11 輸入/輸出開口 47 開口 12 管路 48 真空管路 14 開口 50 槽 15 溢流管路 51 0形環 17 中央開口 60 第二程序容器 19 移動捍 62 排放開口 20 陽電極板 63 管路 21 頂面 64 輸入開口 23 0形環 65 輸入管路 25 0形環 66 溢流開口 26 密封囊 67 管路 29 中央開口 70 管路 31 晶圓 72 管路 32 密封 74 開口 (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（210 χ 297公釐） -16- 472316 ㉛ ormr A7 B7 η-； 五、發明說明（μ.) 75 表面 76底壁面 77 上壁面 78 右側壁面 80輸入/輸出開口 82管路 84 開口 85管路 87 中央開口 90噴嘴 91密封囊 (請先閱讀背面之注意事項再填寫本頁) 裝---------訂.'-------户 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -17-(Please read the notes on the back before filling out this page)-Ordering 丨. »^^ 1----ΐ —ill * 15 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs Year? Month "Revision 0, correction / addition A7 B7 supplementary 丨 V. Description of the invention (I3 ·) Component symbol description 1 Metal coating device 33 Surface 2 Program container 35 Undercut 3 Anode combination 37 Contact element 4 Substrate carrier 39 Contact Lip 6 Bottom wall surface 40 Surface 7 Upper wall surface 42 Main body 8 Left wall surface 43 Moving rod 9 Right wall surface 44 Vacuum gripper 10 Program space 45 Vacuum line 11 Input / output opening 47 Opening 12 Line 48 Vacuum line 14 Opening 50 Slot 15 Overflow line 51 0-ring 17 Central opening 60 Second program container 19 Moving guard 62 Drain opening 20 Positive electrode plate 63 Line 21 Top surface 64 Input opening 23 0-ring 65 Input line 25 0-ring 66 Overflow Opening 26 Sealing capsule 67 Tube 29 Central opening 70 Tube 31 Wafer 72 Tube 32 Seal 74 Opening (please read the precautions on the back before filling this page) This paper size applies to China National Standard (CNS) A4 specifications (210 χ 297 mm) -16- 472316 ㉛ ormr A7 B7 η-; 5. Description of the invention (μ.) 75 surface 76 bottom wall surface 77 upper wall surface 78 right wall surface 80 input / output opening 8 2 Pipe 84 Opening 85 Pipe 87 Central Opening 90 Nozzle 91 Sealing Capsule (Please read the precautions on the back before filling this page) Install --------- Order .'------- Household Printed on the paper of the Employees' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, the paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) -17-