JP4884999B2 - Substrate processing equipment - Google Patents

Description

  The present invention relates to a substrate such as a silicon substrate, a compound semiconductor substrate, a glass substrate for liquid crystal display, or a glass substrate for photomask (hereinafter simply referred to as “substrate”) used in solar cells, compound semiconductors, liquid crystal display devices, and reticles. ) Substrate processing apparatus for performing the surface treatment.

  In the substrate manufacturing process, chemical treatment of the substrate surface with various chemical solutions and cleaning treatment of the substrate surface with a cleaning solution such as pure water are performed in a predetermined order. The chemical solution treatment is performed, for example, by immersing the substrate in a treatment tank in which the chemical solution is stored for a predetermined time (see Patent Document 1). The cleaning process is performed by supplying a shower of cleaning liquid to the substrate, or by immersing the substrate in a processing tank in which the cleaning liquid is stored for a predetermined time.

Japanese Patent Laid-Open No. 5-109684

  In the conventional substrate processing apparatus, when the chemical processing or cleaning process is performed by immersing the substrate in the processing tank, when the chemical processing is completed in the processing tank for chemical processing, the substrate is transported to the processing tank for cleaning processing, The cleaning process was performed in the processing tank for the cleaning process. However, according to such a configuration, each time one process is completed, the substrate must be transported to another processing tank, so that there is a problem that the processing time is increased by the time required for transport. It was.

  In addition, a treatment tank is disposed in the chamber, and after the substrate is immersed in a chemical solution stored in the treatment tank and the chemical treatment is performed, the cleaning liquid is supplied to the treatment tank and the chemical liquid is replaced with the cleaning liquid. A cleaning process is also performed. However, according to such a configuration, the chemical solution adheres to the inner wall surface of the chamber, and this chemical solution may vaporize and contaminate the substrate after the cleaning process.

  The present invention has been made in view of such circumstances, and an object of the present invention is to provide a substrate processing apparatus that can reduce the processing time of a substrate while preventing contamination of the substrate.

The invention according to claim 1 is a substrate processing apparatus for performing a surface treatment of a substrate, a chamber capable of accommodating a substrate and making the inside a sealed space, and disposed in the chamber to store a processing liquid A treatment tank, a treatment liquid supply pipe disposed in the chamber, a treatment liquid supply system that selectively supplies either a cleaning liquid or a chemical liquid as a treatment liquid to the treatment liquid supply pipe, and the treatment A first discharge nozzle that is attached to the liquid supply pipe and discharges the treatment liquid in a direction toward the substrate supported in the treatment tank; and an outer wall surface of the treatment tank and the chamber that are attached to the treatment liquid supply pipe A second discharge nozzle that discharges the processing liquid in a direction toward the inner wall surface of the first tank and supplies the processing liquid to an outer wall surface of the processing tank and an inner wall surface of the chamber . Discharge of the cleaning liquid from the discharge nozzle In parallel, the cleaning liquid is discharged from the second discharge nozzle between the outer wall surface of the processing tank and the inner wall surface of the chamber, and the flow of the cleaning liquid discharged from the second discharge nozzle inner wall of the outer wall surface and the chamber of the processing tank Ru washed.

A second aspect of the present invention is the substrate processing apparatus according to the first aspect, wherein a plurality of the first discharge nozzles and a plurality of the second discharge nozzles are respectively attached to the processing liquid supply pipe. The number of the second discharge nozzles attached to the supply pipe is smaller than the number of the first discharge nozzles attached to the processing liquid supply pipe.

  A third aspect of the present invention is the substrate processing apparatus according to the first or second aspect, wherein the third discharge is attached to the processing liquid supply pipe and discharges the processing liquid in a direction toward the back surface of the lid of the chamber. A nozzle.

According to a fourth aspect of the present invention, there is provided a substrate processing apparatus for performing a surface treatment of a substrate, the chamber capable of accommodating the substrate and making the inside a sealed space, and disposed in the chamber to store a processing liquid. A cleaning liquid, a processing liquid supply unit for supplying a processing liquid to a substrate supported in the processing tank, a cleaning liquid supply pipe disposed in the chamber, and a cleaning liquid supply pipe. A cleaning liquid supply system to be supplied; and attached to the cleaning liquid supply pipe, discharging the cleaning liquid in a direction between the outer wall surface of the processing tank and the inner wall surface of the chamber, and the outer wall surface of the processing tank and the chamber A wall surface cleaning liquid discharge nozzle for supplying the cleaning liquid to the inner wall surface of the chamber, and the cleaning liquid is discharged from the wall surface cleaning liquid discharge nozzle between the outer wall surface of the processing tank and the inner wall surface of the chamber, Wall cleaning Inner wall of the outer wall surface and the chamber of the treatment vessel by the flow of the cleaning liquid discharged from the discharge nozzle Ru washed.

  A fifth aspect of the present invention is the substrate processing apparatus according to the fourth aspect, wherein the processing liquid supply section is a cleaning liquid with respect to the processing liquid supply pipe disposed in the chamber and the processing liquid supply pipe. Alternatively, a processing liquid supply system that selectively supplies either a chemical liquid as a processing liquid and a processing liquid that is attached to the processing liquid supply pipe and that discharges the processing liquid in a direction toward the substrate supported in the processing tank. A discharge nozzle.

A sixth aspect of the present invention is the substrate processing apparatus according to the fourth or fifth aspect, wherein the rear surface cleaning liquid discharge nozzle is attached to the cleaning liquid supply pipe and discharges the cleaning liquid in a direction toward the rear surface of the lid of the chamber. Is provided.
A seventh aspect of the present invention is the substrate processing apparatus according to the fifth aspect, further comprising a back surface cleaning liquid discharge nozzle attached to the cleaning liquid supply pipe and configured to discharge the cleaning liquid in a direction toward the back surface of the lid of the chamber. The discharge of the cleaning liquid from the back surface cleaning liquid discharge nozzle is performed in parallel with the discharge of the cleaning liquid in the direction toward the substrate by the processing liquid discharge nozzle .

According to the first to seventh aspects of the present invention, since the cleaning liquid can be discharged between the outer wall surface of the processing tank and the inner wall surface of the chamber, it adheres to the outer wall surface of the processing tank and the inner wall surface of the chamber. The chemical solution can be washed away. According to this configuration, the chemical solution adhering to the outer wall surface of the processing tank or the inner wall surface of the chamber is not vaporized in the chemical solution processing, and the substrate after the cleaning process is not contaminated. Therefore, the processing time can be shortened while preventing contamination of the substrate.

  In particular, according to the first aspect of the present invention, since the first discharge nozzle and the second discharge nozzle are attached to the same processing liquid supply pipe, the processing liquid supplied to the processing liquid supply pipe is in two different directions. It is possible to discharge at the same time. According to this configuration, the outer wall surface of the processing tank and the inner wall surface of the chamber can be cleaned in parallel with the substrate cleaning process.

  In particular, according to the invention described in claim 2, since the number of the second discharge nozzles attached to the processing liquid supply pipe is smaller than the number of the first discharge nozzles, the processing liquid discharged from the second discharge nozzles. This amount can be made smaller than the amount of the processing liquid discharged from the first discharge nozzle. Therefore, in the case of performing chemical processing on the substrate by supplying the chemical liquid to the processing liquid supply pipe and discharging the chemical liquid from the first discharge nozzle toward the substrate, the amount of the chemical liquid discharged from the second discharge nozzle, that is, The amount of the chemical solution that is lost without being supplied to the substrate can be reduced.

  In particular, according to the third and sixth aspects of the invention, since the cleaning liquid directed toward the back surface of the chamber lid can be discharged, the chemical liquid adhering to the back surface of the chamber lid can be washed away. According to this configuration, even if the chemical solution adheres to the back surface of the chamber lid in the chemical processing, the chemical solution does not vaporize and contaminate the substrate after the cleaning process.

  In particular, according to the fourth and fifth aspects of the present invention, the supply of the processing liquid to the substrate and the supply of the cleaning liquid to the outer wall surface of the processing tank and the inner wall surface of the chamber can be performed independently.

[1. First Embodiment]
<1-1. Constitution>
The configuration of the substrate processing apparatus 100 according to the first embodiment will be described with reference to FIGS. FIG. 1 is a longitudinal sectional view of the substrate processing apparatus 100 cut along a plane parallel to the substrate W. FIG. 2 is a diagram illustrating a configuration of piping and a control system included in the substrate processing apparatus 100. In FIG. 1, an XYZ orthogonal coordinate system is attached. In this coordinate system, the Z-axis direction is the vertical direction, and the X and Y axes define a horizontal plane.

  The substrate processing apparatus 100 includes a sealed chamber 1, a processing tank 2, a processing liquid supply pipe 3, a processing liquid supply system 4, a waste liquid system 5, an exhaust system 6, and a control unit 7.

  The sealed chamber 1 is a housing that houses the treatment tank 2 therein, and includes a main body 11 and a sealed lid 12. The sealing lid 12 can be opened and closed by a slide type opening / closing mechanism (not shown). In a state where the sealing lid 12 is opened, the substrate W can be carried into and out of the main body portion 11 from the opened portion. Further, a sealing seal 121 that seals between the main body portion 11 and the sealing lid 12 is attached to the back surface of the sealing lid 12. When the sealing lid 12 is closed, the inside of the sealed chamber 1 is defined as a sealed space. can do.

  The sealed chamber 1 is sized so that the distance between the outer wall surface of the processing tank 2 and the inner wall surface of the sealed chamber 1 is about 5 to 20 mm in a state where the processing tank 2 described later is disposed in the sealed chamber 1. Is done. The size is set so that the distance between the overflow surface of the processing tank 2 and the back surface of the sealing lid 12 is 20 to 50 mm.

  The processing tank 2 is a container for storing various processing liquids, and is disposed in the sealed chamber 1. In the present specification, the “treatment liquid” is a general term for liquids used for various treatments such as chemicals, cleaning, and drying performed on a substrate, and includes various chemicals, cleaning liquids, drying media, and the like. included. One injection tube 21 is provided at the bottom of the processing tank 2. A plurality of injection holes 211 are formed in the injection tube 21 at predetermined intervals in the Y direction (more specifically, at intervals similar to the storage intervals of the substrates W in the cassette C). The processing liquid supplied to the injection pipe 21 is supplied from the injection hole 211 in a predetermined direction (the substrate W stored in the cassette C placed in the processing tank 2 (that is, the substrate supported in the processing tank 2 by the cassette C). It is discharged in the direction AR211) toward W). The upper part of the processing tank 2 is open, and the processing liquid discharged from the injection hole 211 flows upward in the processing tank 2 and overflows from the upper opening to the outside.

  The processing tank 2 is sized so that the distance between the upper end of the substrate W supported in the processing tank 2 and the overflow surface is about 5 to 10 mm.

  A cassette position restricting portion 22 is formed inside the processing tank 2. The cassette position restricting unit 22 restricts the position of the cassette C in the processing tank 2 by contacting the bottom side of the cassette C. However, a plurality of substrates W are stored in a standing posture in the cassette C.

  The treatment liquid supply pipes 3 are pipes arranged in a pair in the sealed chamber 1 and above both side surfaces of the treatment tank 2. A discharge nozzle 31 is attached to the processing liquid supply pipe 3. More specifically, the discharge nozzle 31 has a direction AR311 toward the substrate W stored in the cassette C placed in the processing tank 2 (that is, the substrate W supported in the processing tank 2 by the cassette C). A plurality of first discharge nozzles 311 for discharging the processing liquid and a processing liquid are discharged in a direction AR312 directed between the outer wall surface of the processing tank 2 and the inner wall surface of the sealed chamber 1, thereby sealing the outer wall surface of the processing tank 2 A plurality of second discharge nozzles 312 for supplying the processing liquid to the inner wall surface of the chamber 1 are attached. The processing liquid discharged from each of the plurality of first discharge nozzles 311 is supplied to the surface of the substrate W supported in the processing tank 2. Further, the processing liquid discharged from each of the plurality of second discharge nozzles 312 is supplied to the outer wall surface of the processing tank 2 and the inner wall surface of the sealed chamber 1.

<Discharge nozzle 31>
The discharge nozzle 31 will be described more specifically with reference to FIG. 3A is a cross-sectional view of the processing liquid supply pipe 3 with respect to the XZ plane, and FIG. 3B is a side view of the processing liquid supply pipe 3 viewed from the P1-P2 direction.

  As described above, a plurality of first discharge nozzles 311 and a plurality of second discharge nozzles 312 are attached to the processing liquid supply pipe 3 as the discharge nozzles 31. As shown in FIG. 3A, the first discharge nozzle 311 and the second discharge nozzle 312 are attached to the processing liquid supply pipe 3 while forming a predetermined angle α with respect to each other in the XZ plane. The angle α is a direction AR311 from the central axis of the processing liquid supply pipe 3 toward the substrate W supported in the processing tank 2, and a distance from the central axis between the outer wall surface of the processing tank 2 and the inner wall surface of the sealed chamber 1. The angle formed by the direction AR312.

  As shown in FIG. 3B, the plurality of first discharge nozzles 311 are arranged at predetermined intervals in the Y direction (more specifically, at intervals similar to the storage intervals of the substrates W in the cassette C). . The above-described cassette position restricting unit 22 restricts the position of the cassette C so that each of the first discharge nozzles 311 discharges the processing liquid between the plurality of substrates W stored in the cassette C.

  The plurality of second discharge nozzles 312 are arranged at predetermined intervals in the Y direction, as shown in FIG. The arrangement interval of the second discharge nozzles 312 is set larger than the arrangement interval of the first discharge nozzles 311 (preferably about five times the arrangement interval of the first discharge nozzles 311). This arrangement interval varies depending on the angle of the processing liquid ejected from the second discharge nozzle 312 and is an interval that can cover at least the entire outer wall surface of the processing tank 2.

  Refer to FIG. 2 again. The processing liquid supply system 4 is a piping system that selectively supplies either the cleaning liquid or the chemical liquid to each of the injection pipe 21 and the processing liquid supply pipe 3. More specifically, it is a piping system that selectively supplies any one of the first to fourth processing liquids to the injection pipe 21 and the processing liquid supply pipe 3. In this embodiment, it is assumed that the first to third treatment liquids can be selected as the chemical liquid, and the first treatment liquid is an alkaline chemical liquid (for example, a mixed liquid of potassium hydroxide, ammonia water and hydrogen peroxide water). ), The second treatment liquid is an acidic chemical (for example, a mixed liquid of sulfuric acid, hydrofluoric acid, nitric acid, hydrochloric acid, and hydrogen peroxide water), and the third treatment liquid is a drying medium (for example, IPA) liquid. Further, it is assumed that the fourth processing liquid is a cleaning liquid (for example, pure water).

  The treatment liquid supply system 4 includes a pipe 41 having one end connected to the injection pipe 21 and the other end connected to each of the selection valves 431a, 431b, 431c, and 431d. An injection valve 411 is inserted in the pipe 41.

  The processing liquid supply system 4 includes a pipe 42 having one end connected to the processing liquid supply pipe 3 and the other end connected to each of the selection valves 431a, 431b, 431c, and 431d. A discharge valve 421 is inserted in the pipe 42.

  Further, the processing liquid supply system 4 includes pipes 43a, 43b, 43c, and 43d, one end of which is connected to each of the selection valves 431a, 431b, 431c, and 431d. The other end of the pipe 43a is connected to a first processing liquid storage tank 435a that stores the first processing liquid. The pipe 43a includes a filter 432a that removes dust and the like in the processing liquid flowing in the pipe 43a, a heater 433a that controls the temperature of the processing liquid flowing in the pipe 43a, and a process stored in the first processing liquid storage tank 435a. A pump 434a for sending the liquid to the pipe 43a is inserted. Similarly, the other ends of the pipes 43b, 43c, and 43d store a second processing liquid storage tank 435b that stores the second processing liquid, a third processing liquid storage tank 435c that stores the third processing liquid, and a fourth processing liquid, respectively. Connected to the fourth treatment liquid storage tank 435d. Further, filters 432b, 432c, and 432d, heaters 433b, 433c, and 433d, and pumps 434b, 434c, and 434d are interposed in the pipes 43b, 43c, and 43d, respectively.

  Each of the injection valve 411, the discharge valve 421, and the selection valves 431a, 431b, 431c, 431d is connected to the control unit 7. The control unit 7 controls the opening and closing of each valve at a predetermined timing, so that each of the injection pipe 21 and the processing liquid supply pipe 3 has a predetermined processing liquid (any one of the first to fourth processing liquids) at a predetermined timing. Supply a treatment solution).

  The waste liquid system 5 is a piping system that wastes the processing liquid in the sealed chamber 1 and the processing tank 2 and returns it to a predetermined processing liquid storage tank or leads to a drain line. The waste liquid system 5 has one end connected to a drain valve 512 provided at the bottom of the sealed chamber 1 and a drain valve 513 provided at the bottom of the processing tank 2, and the other end connected to each of the processing liquid storage tanks 435a, 435b, and 435c. The pipes 51a, 51b and 51c are provided. Waste fluid valves 511a, 511b, and 511c are interposed in the pipes 51a, 51b, and 51c, respectively. In addition, a pipe 51d having one end connected to the drain valves 512 and 513 and the other end connected to a drain line is provided. A waste liquid valve 511d is inserted in the pipe 51d.

  Each of the waste liquid valves 511a, 511b, 511c, and 511d is connected to the control unit 7. The control unit 7 controls the opening and closing of each valve at a predetermined timing, thereby draining the processing liquid in the sealed chamber 1 and the processing tank 2 at a predetermined timing to thereby perform predetermined processing liquid storage tanks 435a, 435b, and 435c. Or return to the drain line.

  The exhaust system 6 is a piping system that exhausts the atmosphere in the sealed chamber 1. The exhaust system 6 includes a pipe 61 having one end connected to the inside of the sealed chamber 1 and the other end connected to an exhaust line. An exhaust valve 611 and an exhaust pump 612 are inserted in the pipe 61.

  The exhaust valve 611 is connected to the control unit 7. The control unit 7 controls the opening and closing of the exhaust valve 611 at a predetermined timing and drives the exhaust pump 612 to exhaust the atmosphere in the sealed chamber 1. Further, the inside of the sealed chamber 1 can be decompressed.

<1-2. Processing action>
A substrate processing operation executed in the substrate processing apparatus 100 according to the first embodiment will be described with reference to FIG. FIG. 4 is a diagram showing the flow of the substrate processing operation.

  First, a transfer robot (not shown) carries a cassette C storing a plurality of unprocessed substrates W into the sealed chamber 1 and places it at a predetermined position in the processing tank 2 (step S1). The position of the cassette C arranged in the processing tank 2 is regulated by the cassette position regulating unit 22. Fine electronic circuit formation patterns may be formed on the surfaces of the plurality of unprocessed substrates W stored in the cassette C. Moreover, the surface of these patterns may be a metal. When the cassette C is carried into the processing tank 2, the control unit 7 closes the sealing lid 12 to make the inside of the sealed chamber 1 a sealed space.

  Subsequently, the surface treatment for the substrate W is started. First, the surface chemical treatment of the substrate W with the first treatment liquid is performed (step S2). The surface chemical treatment of the substrate W is performed by supplying the treatment liquid to the substrate surface. The supply pattern of the processing liquid is selected from the following three. Which pattern is used to supply the processing liquid is determined according to the surface state of the substrate to be processed, the type of processing liquid to be supplied, and the like. Further, the following supply patterns may be sequentially switched for processing.

<Shower supply>
A 1st supply pattern supplies a process liquid with a shower. When supplying the processing liquid (for example, the first processing liquid) by a shower, the control unit 7 opens the selection valve 431 a and the discharge valve 421 and supplies the first processing liquid to the processing liquid supply pipe 3. Then, the first processing liquid is discharged from the first discharge nozzle 311 toward the substrate W, and the surface treatment for the substrate W is executed by the flow of the discharged first processing liquid (processing liquid shower). Note that while the first processing liquid is being discharged from the first discharge nozzle 311, the first processing liquid is also discharged from the second discharge nozzle 312. When the surface treatment for the substrate W is completed after a predetermined time has elapsed, the control unit 7 closes the selection valve 431a and the discharge valve 421 and stops the supply of the first treatment liquid to the treatment liquid supply pipe 3.

  The controller 7 opens the drain valves 512 and 513 and the waste liquid valve 511a when opening the discharge valve 421. Therefore, the first processing liquid discharged from the discharge nozzle 31 is not stored in the processing tank 2 or the sealed chamber 1 but returns to the first processing liquid storage tank 435a through the pipe 51. Thereby, the surface treatment for the substrate W can be continuously performed by the shower of the treatment liquid. In addition, since the inside of the sealed chamber 1 is a sealed space, the chemical solution mist supplied by the shower does not flow out to the transfer area.

<Overflow supply>
In the second supply pattern, the processing liquid is supplied by overflow. When supplying the processing liquid (for example, the first processing liquid) by overflow, the control unit 7 opens the selection valve 431 a and the injection valve 411 and supplies the first processing liquid to the injection pipe 21. Then, the first processing liquid is discharged from the injection hole 211 into the processing tank 2, whereby the first processing liquid is stored in the processing tank 2. Moreover, the flow of the 1st process liquid is formed in the process tank 2 by continuing overflowing the stored process liquid from the opening part of the process tank 2, and the surface treatment with respect to the board | substrate W is formed by the formed flow of the 1st process liquid. Is executed. When the predetermined time has elapsed and the surface treatment for the substrate W is completed, the controller 7 closes the selection valve 431a and the injection valve 411 and stops the supply of the first processing liquid to the injection tube 21. During the overflow, the drain valve 512 and the waste liquid valve 511a are opened, and the first processing liquid in the processing tank 2 and the sealed chamber 1 is returned to the first processing liquid storage tank 435a. Finally, the drain valve 513 is opened, and all the first processing liquid in the processing tank 2 is collected.

<Combination of shower supply and overflow supply>
A 3rd supply pattern supplies a process liquid by both a shower and overflow. When supplying the processing liquid (for example, the first processing liquid) by both shower and overflow, the control unit 7 opens the selection valve 431 a and the discharge valve 421 and supplies the first processing liquid to the processing liquid supply pipe 3. At the same time as opening the discharge valve 421 or after a predetermined time has elapsed since the discharge valve 421 was opened, the controller 7 opens the injection valve 411 and supplies the first processing liquid to the injection pipe 21. Then, the surface treatment for the substrate W is performed by the flow of the first processing liquid discharged from the first discharge nozzle 311 and the flow of the first processing liquid discharged from the injection hole 211 and overflowing from the opening of the processing tank 2. Executed. When the surface treatment for the substrate W is completed after a predetermined time has elapsed, the control unit 7 closes the selection valve 431a and the discharge valve 421, stops the supply of the first treatment liquid to the treatment liquid supply pipe 3, and sets the injection valve 411. It closes and supply of the 1st processing liquid to injection pipe 21 is stopped. During this time, the drain valve 512 and the waste liquid valve 511a are opened, and the first processing liquid in the processing tank 2 and the sealed chamber 1 is returned to the first processing liquid storage tank 435a. Finally, the drain valve 513 is opened, and all the first processing liquid in the processing tank 2 is collected.

  Refer to FIG. 4 again. When the process of step S2 is completed, a cleaning process is subsequently performed (step S3). Here, the surface cleaning process of the substrate W and the cleaning process of the outer wall surface of the processing tank 2 and the inner wall surface of the sealed chamber 1 are performed in parallel. The supply pattern of the cleaning liquid is selected from the following two. Which supply pattern is used for the cleaning process is determined according to the surface state of the substrate to be processed, the type of the processing liquid supplied earlier, the type of the cleaning liquid, and the like. Further, the following supply patterns may be sequentially switched for processing.

<Wash the wall while cleaning the substrate with shower supply>
In the first supply pattern, the outer wall surface of the processing tank 2 and the inner wall surface of the sealed chamber 1 are cleaned while cleaning the substrate W by shower supply. In this case, the control unit 7 opens the selection valve 431 d and the discharge valve 421 and supplies the fourth processing liquid (cleaning liquid) to the processing liquid supply pipe 3. Then, the cleaning liquid is discharged from the first discharge nozzle 311 toward the substrate W, and the surface cleaning process is performed on the substrate W by the flow of the discharged cleaning liquid (cleaning liquid shower). As a result, the first treatment liquid remaining on the substrate surface is washed away. In addition, while the first processing liquid is being discharged from the first discharge nozzle 311, at the same time, the cleaning liquid is discharged from the second discharge nozzle 312 between the outer wall surface of the processing tank 2 and the inner wall surface of the sealed chamber 1, The outer wall surface of the processing tank 2 and the inner wall surface of the sealed chamber 1 are cleaned by the flow of the discharged cleaning liquid. As a result, the first processing liquid attached to the outer wall surface of the processing tank 2 due to overflow and the first processing liquid attached to the inner wall surface of the sealed chamber 1 due to shower splash are washed away. When the cleaning process is completed after a predetermined time has elapsed, the control unit 7 closes the selection valve 431d and the discharge valve 421 and stops the supply of the cleaning liquid to the processing liquid supply pipe 3.

  The controller 7 opens the drain valves 512 and 513 and the waste liquid valve 511d when opening the discharge valve 421. Therefore, the cleaning liquid discharged from the discharge nozzle 31 is drained through the pipe 51 without being stored in the processing tank 2 or the sealed chamber 1.

<Washing the wall while cleaning the substrate using a combination of shower supply and overflow supply>
In the second supply pattern, the outer wall surface of the processing tank 2 and the inner wall surface of the sealed chamber 1 are cleaned while cleaning the substrate W by both shower supply and overflow supply. In this case, the control unit 7 opens the selection valve 431 d and the discharge valve 421 and supplies the cleaning liquid to the processing liquid supply pipe 3. At the same time as opening the discharge valve 421 or after a predetermined time has elapsed since the discharge valve 421 was opened, the control unit 7 opens the injection valve 411 and supplies the cleaning liquid to the injection pipe 21. Then, the surface cleaning process is performed on the substrate W by the flow of the cleaning liquid discharged from the first discharge nozzle 311 and the flow of the first processing liquid discharged from the injection hole 211 and overflowing from the opening of the processing tank 2. The At the same time as the cleaning liquid is discharged from the first discharge nozzle 311, the cleaning liquid is also discharged from the second discharge nozzle 312 toward the space between the outer wall surface of the processing tank 2 and the inner wall surface of the sealed chamber 1. The outer wall surface of the processing tank 2 and the inner wall surface of the sealed chamber 1 are washed by the flow of the above. When the cleaning process is completed after a predetermined time has elapsed, the control unit 7 closes the selection valve 431d and the discharge valve 421, stops the supply of the cleaning liquid to the processing liquid supply pipe 3, closes the injection valve 411, and the injection pipe 21. Stop supplying cleaning solution. During this time, the drain valve 512 and the waste liquid valve 511d are opened, and the cleaning liquid in the processing tank 2 and the sealed chamber 1 is drained. Finally, the drain valve 513 is opened, and all the cleaning liquid in the processing tank 2 is drained.

  Refer to FIG. 3 again. When the process in step S3 is completed, the surface treatment of the substrate W with the second processing liquid is subsequently performed (step S4). The surface treatment of the substrate W with the second treatment liquid is similar to the surface treatment with the first treatment liquid. Is done by supplying The specific processing operation is as described in step S2, except that the selection valve 431b, not the selection valve 431a, is controlled to open and close.

  Subsequently, the cleaning process is performed again (step S5). The specific processing operation is as described in step S3. By executing the processing of step S5, the second processing liquid remaining on the substrate surface is washed away. Further, the second processing liquid attached to the outer wall surface of the processing tank 2 and the inner wall surface of the sealed chamber 1 is washed away.

  Then, the surface drying process of the board | substrate W by a drying medium is performed (step S6). The surface drying treatment of the substrate W with the drying medium is performed on the substrate surface with a supply pattern determined according to the surface state of the substrate to be processed and the type of the drying medium to be supplied, as in the surface treatment with the first processing liquid. Done by supplying. The specific processing operation is as described in step S2, except that the selection valve 431c is controlled to open and close instead of the selection valve 431a. When the drying process is completed, the controller 7 opens the exhaust valve 611 and controls the exhaust pump 612 to exhaust the atmosphere in the sealed chamber 1.

  Thus, the surface treatment for the substrate W is completed. When the surface treatment is completed, the control unit 7 opens the sealing lid 12. Subsequently, a transfer robot (not shown) carries out the cassette C placed in the processing tank 2 from the sealed chamber 1 (step S7).

<1-3. effect>
According to this embodiment, in the cleaning process, the cleaning liquid is discharged from the second discharge nozzle 312 between the outer wall surface of the processing tank 2 and the inner wall surface of the sealed chamber 1 and adheres to the outer wall surface of the processing tank 2 due to overflow. The chemical solution adhering to the inner wall surface of the sealed chamber 1 is washed away by the first treatment liquid and the shower splash. According to this configuration, the chemical solution attached to the outer wall surface of the processing tank 2 and the inner wall surface of the sealed chamber 1 does not vaporize and contaminate the substrate after the cleaning processing in the chemical processing. Can be executed continuously in the same processing tank. Therefore, the conveyance time for moving the substrate from the chemical solution processing tank to the cleaning processing tank becomes unnecessary, and the processing time can be shortened.

  In addition, since it is not necessary to separately provide a chemical treatment tank and a cleaning treatment tank, the apparatus can be made compact and the manufacturing cost can be reduced.

  In addition, since the chemical solution adhering to the outer wall surface of the treatment tank 2 and the inner wall surface of the sealed chamber 1 is washed away in the chemical solution processing, the chemical solution does not vaporize and fill the sealed chamber 1. Therefore, the exhaust amount of the sealed chamber 1 can be reduced.

  Furthermore, according to this embodiment, in the chemical liquid processing, the chemical liquid processing can be performed on the substrate by discharging the processing liquid from the first discharge nozzle 311 and supplying the processing liquid to the substrate with a shower. In this case, it becomes possible to strike the liquid droplet of the chemical liquid against the substrate at high speed. In other words, not only chemical reaction but also physical force (fluid resistance, droplet kinetic energy, etc.) can be used for surface treatment of the substrate, so that the time required for chemical treatment can be shortened. it can. Further, since the processing liquid is not stored in the processing tank 2, the entire amount of the processing liquid can be filtered. Therefore, the dust generated in the chemical treatment is not accumulated in the processing tank 2 and there is no need to wait until the dust level in the processing tank 2 becomes a constant level by the circulation filtering. Also in this point, the processing time can be shortened.

  Further, according to this embodiment, since the first discharge nozzle 311 and the second discharge nozzle 312 are attached to the processing liquid supply pipe 3, the processing liquid supplied to the processing liquid supply pipe 3 can be supplied in two different directions AR311 and AR311, respectively. It can discharge simultaneously toward AR312. According to this configuration, the outer wall surface of the processing tank 2, the inner wall surface of the sealed chamber 1, and the substrate can be cleaned at the same time. Therefore, the cleaning process can be performed efficiently.

  Further, according to this embodiment, since the arrangement interval of the second discharge nozzles 312 is larger than the arrangement interval of the first discharge nozzles 311, the amount of the processing liquid discharged from the second discharge nozzles 312 is set to the first discharge nozzle 312. The amount of the processing liquid discharged from the discharge nozzle 311 can be reduced. Therefore, in the case where chemical processing is performed on the substrate surface by supplying chemical liquid to the processing liquid supply pipe 3 and discharging the chemical liquid from the first discharge nozzle 311 toward the substrate, the chemical liquid that is discharged from the second discharge nozzle 312. (That is, the amount of the chemical liquid that is lost without being supplied to the substrate).

[2. Second Embodiment]
<2-1. Constitution>
The structure of the substrate processing apparatus 200 according to the second embodiment of the present invention will be described with reference to FIGS. FIG. 5 is a longitudinal sectional view of the substrate processing apparatus 200 cut along a plane parallel to the substrate W. FIG. 6 is a diagram illustrating a configuration of piping and a control system included in the substrate processing apparatus 200. In the following, points that differ from the first embodiment will be described, and descriptions of points that are not different will be omitted. Moreover, when showing the same component, the reference numerals used in the description of the first embodiment are used.

  The substrate processing apparatus 200 according to this embodiment includes a sealed chamber 1, a processing tank 2, a processing liquid supply pipe 8, a processing liquid supply system 9, a waste liquid system 5, an exhaust system 6, and a control unit 7. Is provided.

  The processing liquid supply pipe 8 includes a first processing liquid supply pipe 81 and a second processing liquid supply pipe 82 that form mutually independent flow paths.

  The first processing liquid supply pipe 81 is a processing liquid supply pipe disposed in the sealed chamber 1 and above both side surfaces of the processing tank 2. A plurality of first discharge nozzles 811 for discharging the processing liquid in the direction AR811 toward the substrate W supported in the processing tank 2 are attached to the first processing liquid supply pipe 81. The processing liquid discharged from each of the plurality of first discharge nozzles 811 is supplied to the surface of the substrate W supported in the processing tank 2.

  The second processing liquid supply pipe 82 is a cleaning liquid supply pipe disposed in the sealed chamber 1 and between the both side surfaces of the sealed chamber 1 and the first processing liquid supply pipe 81. Are disposed adjacent to each other. A wall surface cleaning liquid discharge nozzle for discharging a cleaning liquid for cleaning the wall surface is attached to the second processing liquid supply pipe 82. More specifically, as the wall surface cleaning liquid discharge nozzle, the cleaning liquid is discharged in the direction AR821 between the outer wall surface of the processing tank 2 and the inner wall surface of the sealed chamber 1, and the outer wall surface of the processing tank 2 and the sealed chamber 1 are A plurality of second discharge nozzles 821 for supplying the cleaning liquid to the inner wall surface are attached. The cleaning liquid discharged from each of the plurality of second discharge nozzles 821 is supplied to the outer wall surface of the processing tank 2 and the inner wall surface of the sealed chamber 1.

<First discharge nozzle 811 and second discharge nozzle 821>
The first discharge nozzle 811 and the second discharge nozzle 821 will be described more specifically with reference to FIG. FIG. 7A is a cross-sectional view of the first processing liquid supply pipe 81 and the second processing liquid supply pipe 82 taken along the XZ plane. FIG. 7B is a side view of the first processing liquid supply pipe 81 viewed from the P3-P4 direction, and FIG. 7C is a side view of the second processing liquid supply pipe 82 viewed from the P5-P6 direction. FIG.

  A plurality of first discharge nozzles 811 are attached to the first processing liquid supply pipe 81 as described above. As shown in FIG. 7A, the first discharge nozzle 811 is attached toward the direction AR821 from the central axis of the first processing liquid supply pipe 81 toward the substrate W supported in the processing tank 2 in the XZ plane. It has been.

  As shown in FIG. 7B, the plurality of first discharge nozzles 811 are arranged at a predetermined interval in the Y direction (more specifically, an interval approximately equal to the storage interval of the substrates W in the cassette C). . The cassette position restricting unit 22 restricts the position of the cassette C such that each of the first discharge nozzles 811 discharges the processing liquid between the plurality of substrates W stored in the cassette C.

  As described above, the plurality of second discharge nozzles 821 are attached to the second processing liquid supply pipe 82. As shown in FIG. 7A, the second discharge nozzle 821 is located between the outer wall surface of the processing tank 2 and the inner wall surface of the sealed chamber 1 from the central axis of the second processing liquid supply pipe 82 in the XZ plane. It is attached toward the direction AR821.

  The plurality of second discharge nozzles 821 are arranged at predetermined intervals in the Y direction, as shown in FIG. The arrangement interval of the second discharge nozzles 821 may be set larger than the arrangement interval of the first discharge nozzles 811 or may be set to be approximately the same as the arrangement interval of the first discharge nozzles 811.

  Refer to FIG. 6 again. The processing liquid supply system 9 includes a first processing liquid supply system 9A that is a piping system that selectively supplies either the cleaning liquid or the chemical liquid to each of the first processing liquid supply pipe 81 and the injection pipe 21, and the second processing liquid. The liquid supply pipe 82 is provided with a second processing liquid supply system 9B which is a piping system for supplying a cleaning liquid. The first to fourth processing liquids are the same as those described in the first embodiment.

  The treatment liquid supply system 9 includes, as the first treatment liquid supply system 9A, a pipe 91 having one end connected to the injection pipe 21 and the other end connected to each of the selection valves 941a, 941b, 941c, and 941d. An injection valve 911 is inserted in the pipe 91.

  Further, the processing liquid supply system 9 includes a pipe 92 having one end connected to the first processing liquid supply pipe 81 and the other end connected to the selection valves 941a, 941b, 941c, and 941d as the first processing liquid supply system 9A. I have. A first discharge valve 921 is inserted in the pipe 92.

  Further, the processing liquid supply system 9 includes, as the second processing liquid supply system 9B, a pipe 93 having one end connected to the second processing liquid supply pipe 82 and the other end connected to the pipe 94d. A second discharge valve 931 is inserted in the pipe 93.

  Further, the processing liquid supply system 9 includes, as the first processing liquid supply system 9A, pipes 94a, 94b, and 94c having one ends connected to the selection valves 941a, 941b, and 941c, respectively. Further, as a configuration shared by the first processing liquid supply system 9A and the second processing liquid supply system 9B, a pipe 94d having one end connected to the selection valve 941d is provided. The other ends of the pipes 94a, 94b, 94c, and 94d are connected to the first processing liquid storage tank 945a, the second processing liquid storage tank 945b, the third processing liquid storage tank 945c, and the fourth processing liquid storage tank 945d, respectively. Further, filters 942a, 942b, 942c, and 942d, heaters 943a, 943b, 943c, and 943d, and pumps 944a, 944b, 944c, and 944d are interposed in the pipes 94a, 94b, 94c, and 94d.

  Each of the injection valve 911, the discharge valve 921, the second discharge valve 931, and the selection valves 941a, 941b, 941c, 941d is connected to the control unit 7. The control unit 7 controls the opening and closing of each valve at a predetermined timing, so that each of the first processing liquid supply pipe 81 and the injection pipe 21 has a predetermined processing liquid (of the first to fourth processing liquids) at a predetermined timing. Any one of the treatment liquids). Further, the cleaning liquid (fourth processing liquid) is supplied to the second processing liquid supply pipe 82 at a predetermined timing.

  As described above, in this embodiment, either the cleaning liquid or the chemical liquid is applied to the substrate supported in the processing tank 2 by the first processing liquid supply pipe 81, the injection pipe 21, and the first processing liquid supply system 9A. The process liquid supply part which supplies selectively as process liquid is comprised.

<2-2. Processing action>
A substrate processing operation executed in the substrate processing apparatus 200 according to the second embodiment will be described. The flow of the processing operation executed in the substrate processing apparatus 200 is the same as the flow of the processing operation executed in the substrate processing apparatus 100 according to the first embodiment (FIG. 4). The description will be given with reference.

  First, a transfer robot (not shown) carries a cassette C storing a plurality of unprocessed substrates W into the sealed chamber 1 and places it at a predetermined position in the processing tank 2. And the control part 7 closes the sealing lid 12, and makes the inside of the sealing chamber 1 sealed space (step S1).

  Subsequently, the surface treatment of the substrate W with the first treatment liquid is performed (step S2). As described in the first embodiment, the surface chemical processing of the substrate W supplies the processing liquid to the substrate surface with a supply pattern determined according to the surface state of the substrate to be processed, the type of processing liquid to be supplied, and the like. Is done by doing. The processing operation when the processing liquid is supplied by overflow is the same as that of the first embodiment. Further, the processing operation in the case of supplying the processing liquid by a shower and the processing operation in the case of supplying the processing liquid by both a shower and an overflow are performed as follows.

<Shower supply>
When supplying the processing liquid (for example, the first processing liquid) in a shower, the control unit 7 opens the selection valve 941 a and the first discharge valve 921 to supply the first processing liquid to the first processing liquid supply pipe 81. Then, the first processing liquid is discharged from the first discharge nozzle 811 toward the substrate W, and the surface treatment for the substrate W is executed by the flow of the discharged first processing liquid (processing liquid shower). The controller 7 opens the drain valves 512 and 513 and the waste liquid valve 511a when opening the discharge valve 421. When the surface treatment for the substrate W is completed after a predetermined time has elapsed, the controller 7 closes the selection valve 941a and the discharge valve 921 and stops the supply of the first treatment liquid to the first treatment liquid supply pipe 81.

<Combination of shower supply and overflow supply>
When supplying the processing liquid (for example, the first processing liquid) by both shower and overflow, the control unit 7 opens the selection valve 941 a and the first discharge valve 921 to the first processing liquid supply pipe 81. Supply. At the same time as opening the first discharge valve 921 or after a predetermined time has elapsed since the first discharge valve 921 was opened, the control unit 7 opens the injection valve 911 and puts the first treatment liquid into the injection pipe 21. Supply. Then, the surface treatment for the substrate is performed by the flow of the first processing liquid discharged from the first discharge nozzle 811 and the flow of the first processing liquid discharged from the injection hole 211 and overflowing from the opening of the processing tank 2. Is done. When the surface treatment for the substrate W is completed after a predetermined time has elapsed, the control unit 7 closes the selection valve 941a and the first discharge valve 921 to stop the supply of the first treatment liquid to the first treatment liquid supply pipe 81, The injection valve 911 is closed and the supply of the first processing liquid to the injection tube 21 is stopped. During this time, the drain valve 512 and the waste liquid valve 511a are opened, and the first processing liquid in the processing tank 2 and the sealed chamber 1 is returned to the first processing liquid storage tank 435a. Finally, the drain valve 513 is opened, and all the first processing liquid is collected.

  Refer to FIG. 4 again. When the process of step S2 is completed, a cleaning process is subsequently performed (step S3). Here, the surface cleaning process of the substrate W and the cleaning process of the outer wall surface of the processing tank 2 and the inner wall surface of the sealed chamber 1 are performed in parallel. The supply pattern of the cleaning liquid in the cleaning process is selected from the following three.

<Wash the wall while cleaning the substrate with shower supply>
In the first supply pattern, the outer wall surface of the processing tank 2 and the inner wall surface of the sealed chamber 1 are cleaned while cleaning the substrate W by shower supply. In this case, the control unit 7 opens the selection valve 941d and the first discharge valve 921, and supplies the fourth processing liquid (cleaning liquid) to the first processing liquid supply pipe 81. Then, a cleaning liquid is discharged from the first discharge nozzle 811 toward the substrate W, and a surface cleaning process is performed on the substrate W by the flow of the discharged cleaning liquid (cleaning liquid shower). When the surface cleaning process for the substrate W is completed after a predetermined time has elapsed, the control unit 7 closes the selection valve 941d and the first discharge valve 921, and stops the supply of the cleaning liquid to the first processing liquid supply pipe 81.

  At the same time that the first discharge valve 921 is opened, the controller 7 opens the second discharge valve 931 and supplies the cleaning liquid to the second processing liquid supply pipe 82. Then, the cleaning liquid is discharged from the second discharge nozzle 821 between the outer wall surface of the processing tank 2 and the inner wall surface of the sealed chamber 1, and the outer wall surface of the processing tank 2 and the inside of the sealed chamber 1 are flown by the flow of the discharged cleaning liquid. The wall is cleaned. When the predetermined time has elapsed and the cleaning of the outer wall surface of the processing tank 2 and the inner wall surface of the sealed chamber 1 is completed, the control unit 7 closes the second discharge valve 931 and supplies the cleaning liquid to the second processing liquid supply pipe 82. Stop. The timing for closing the second discharge valve 931 may be the same as the timing for closing the first discharge valve 921, or may be before the first discharge valve 921 is closed. Alternatively, the second discharge valve 931 may be controlled to open and close at a predetermined timing, and the cleaning liquid may be discharged intermittently from the second discharge nozzle 821.

  The controller 7 opens the drain valves 512 and 513 and the waste liquid valve 511d when opening the discharge valve 421. Therefore, the cleaning liquid discharged from the discharge nozzle 31 is drained through the pipe 51 without being stored in the processing tank 2 or the sealed chamber 1.

<Washing the wall while cleaning the substrate with overflow supply>
In the second supply pattern, the outer wall surface of the processing tank 2 and the inner wall surface of the sealed chamber 1 are cleaned while cleaning the substrate W by overflow supply. In this case, the control unit 7 opens the selection valve 941a and the injection valve 911 and supplies the cleaning liquid to the injection pipe 21. Then, the cleaning process for the substrate W is executed by the flow of the cleaning liquid discharged from the injection hole 211 and overflowing from the opening of the processing tank 2. When the surface cleaning process for the substrate W is completed after a predetermined time has elapsed, the control unit 7 closes the selection valve 941d and the injection valve 911 and stops the supply of the cleaning liquid to the injection tube 21. During this time, the drain valve 512 and the waste liquid valve 511a are opened, and the cleaning liquid in the processing tank 2 and the sealed chamber 1 is drained. Finally, the drain valve 513 is opened, and all the cleaning liquid in the processing tank 2 is drained.

  At the same time as opening the injection valve 911, the controller 7 opens the second discharge valve 931 and supplies the cleaning liquid to the second processing liquid supply pipe 82. Then, the cleaning liquid is discharged from the second discharge nozzle 821 between the outer wall surface of the processing tank 2 and the inner wall surface of the sealed chamber 1, and the outer wall surface of the processing tank 2 and the inside of the sealed chamber 1 are flown by the flow of the discharged cleaning liquid. The wall is cleaned. When the predetermined time has elapsed and the cleaning of the outer wall surface of the processing tank 2 and the inner wall surface of the sealed chamber 1 is completed, the control unit 7 closes the second discharge valve 931 and supplies the cleaning liquid to the second processing liquid supply pipe 82. Stop.

<Washing the wall while cleaning the substrate using a combination of shower supply and overflow supply>
In the third supply pattern, the outer wall surface of the processing tank 2 and the inner wall surface of the sealed chamber 1 are cleaned while cleaning the substrate W by both shower supply and overflow supply. In this case, the control unit 7 opens the selection valve 941d and the discharge valve 921, and supplies the cleaning liquid to the first processing liquid supply pipe 81. At the same time as opening the discharge valve 921 or after a predetermined time has elapsed since the discharge valve 921 was opened, the controller 7 opens the injection valve 911 and supplies the cleaning liquid to the injection pipe 21. Then, the surface cleaning process is performed on the substrate W by the flow of the cleaning liquid discharged from the first discharge nozzle 811 and the flow of the first processing liquid discharged from the injection hole 211 and overflowing from the opening in the processing tank 2. Is done. When the surface cleaning process for the substrate W is completed after a predetermined time has elapsed, the control unit 7 closes the selection valve 941d and the first discharge valve 921, stops the supply of the cleaning liquid to the first processing liquid supply pipe 81, and the injection valve 911 is closed and the supply of the cleaning liquid to the injection tube 21 is stopped. During this time, the drain valve 512 and the waste liquid valve 511a are opened, and the cleaning liquid in the processing tank 2 and the sealed chamber 1 is drained. Finally, the drain valve 513 is opened, and all the cleaning liquid in the processing tank 2 is drained.

  At the same time that the discharge valve 921 is opened, the controller 7 opens the second discharge valve 931 and supplies the cleaning liquid to the second processing liquid supply pipe 82. Then, the cleaning liquid is discharged from the second discharge nozzle 821 between the outer wall surface of the processing tank 2 and the inner wall surface of the sealed chamber 1, and the outer wall surface of the processing tank 2 and the inside of the sealed chamber 1 are flown by the flow of the discharged cleaning liquid. The wall is cleaned. When the predetermined time has elapsed and the cleaning of the outer wall surface of the processing tank 2 and the inner wall surface of the sealed chamber 1 is completed, the control unit 7 closes the second discharge valve 931 and supplies the cleaning liquid to the second processing liquid supply pipe 82. Stop.

  Refer to FIG. 3 again. When the process in step S3 is completed, the surface treatment of the substrate W with the second processing liquid is subsequently performed (step S4). The specific processing operation is as described in step S2, except that the selection valve 941b is controlled to open and close instead of the selection valve 941a.

  Subsequently, the cleaning process is performed again (step S5). The specific processing operation is as described in step S3.

  Then, the surface drying process of the board | substrate W by a 3rd process liquid is performed (step S6). The specific processing operation is as described in step S2, except that the selection valve 941c is opened and closed instead of the selection valve 941a.

  Thus, the surface treatment for the substrate W is completed. When the surface treatment is completed, the control unit 7 opens the sealing lid 12. Subsequently, a transfer robot (not shown) carries out the cassette C placed in the processing tank 2 from the sealed chamber 1 (step S7).

<2-3. effect>
According to this embodiment, the first discharge nozzle 811 and the second discharge nozzle 821 are respectively attached to the first processing liquid supply pipe 81 and the second processing liquid supply pipe 82 in which mutually independent flow paths are formed. Therefore, the supply of the processing liquid to the substrate and the supply of the cleaning liquid to the outer wall surface of the processing tank 2 and the inner wall surface of the sealed chamber 1 can be performed independently.

[3. (Modification)
<3-1. First Modification>
In each of the above embodiments, in the cleaning process, the outer wall surface of the processing tank 2 and the inner wall surface of the sealed chamber 1 are cleaned in parallel with the surface cleaning process of the substrate W. The back surface of 12 may be cleaned.

  A configuration of the substrate processing apparatus according to the first modification will be described. In the following, points that differ from the first embodiment will be described, and descriptions of points that are not different will be omitted. Moreover, when showing the same component, the reference numerals used in the description of the first embodiment are used. The substrate processing apparatus according to this modification has the same configuration as that of the substrate processing apparatus 100 according to the first embodiment, except that a processing liquid supply pipe 3a is provided instead of the processing liquid supply pipe 3.

<Processing liquid supply pipe 3a>
The configuration of the processing liquid supply pipe 3a according to this modification will be described more specifically with reference to FIG. FIG. 8A is a cross-sectional view of the processing liquid supply pipe 3a with respect to the XZ plane, and FIG. 8B is a side view of the processing liquid supply pipe 3a viewed from the P7-P8 direction.

  The processing liquid supply pipe 3 a is a pipe disposed in the sealed chamber 1 and above both side surfaces of the processing tank 2. A plurality of first discharge nozzles 311a, a plurality of second discharge nozzles 312a, and a plurality of third discharge nozzles 313a are attached to the processing liquid supply pipe 3a as the discharge nozzles 31a. The configurations of the first discharge nozzle 311a and the second discharge nozzle 312a are the same as those of the first discharge nozzle 311 and the second discharge nozzle 312 according to the first embodiment, respectively. The third discharge nozzle 313a discharges the processing liquid in the direction AR313 toward the back surface of the sealing lid 12. The processing liquid discharged from each of the plurality of third discharge nozzles 313 a is supplied to the back surface of the sealing lid 12 that closes the sealed chamber 1.

  As shown in FIG. 8A, the first discharge nozzle 311a and the third discharge nozzle 313a are attached to the processing liquid supply pipe 3a while forming a predetermined angle β in the XZ plane. The angle β is formed by a direction AR311 from the central axis of the processing liquid supply pipe 3a toward the substrate W supported in the processing tank 2, and a direction AR313 from the central axis toward the back surface of the sealing lid 12 that closes the processing tank 2. Is an angle.

  As shown in FIG. 8B, the plurality of third discharge nozzles 313a are arranged at predetermined intervals in the Y direction. The arrangement interval of the third discharge nozzles 313a is approximately the same as the arrangement interval of the second discharge nozzles 312.

  According to this configuration, when the control unit 7 opens the selection valve 431d and the discharge valve 421 and supplies the fourth processing liquid (cleaning liquid) to the processing liquid supply pipe 3a, the cleaning liquid is directed toward the substrate W from the first discharge nozzle 311a. The surface cleaning process is performed on the substrate W by the flow of the discharged cleaning liquid (cleaning liquid shower). At the same time, the outer wall surface of the processing tank 2 and the inner wall surface of the sealed chamber 1 are discharged from the second discharge nozzle 312a. The cleaning liquid is discharged in the meantime, and the outer wall surface of the processing tank 2 and the inner wall surface of the sealed chamber 1 are cleaned by the flow of the discharged cleaning liquid, and at the same time, the third discharge nozzle 313 a is applied to the back surface of the sealing lid 12. The cleaning liquid is discharged toward the surface, and the back surface of the sealing lid 12 is cleaned by the flow of the discharged cleaning liquid.

<3-2. Second Modification>
A configuration of the substrate processing apparatus according to the second modification will be described. In the following, differences from the second embodiment will be described, and descriptions of points that are not different will be omitted. Further, when indicating the same components, the reference numerals used in the description of the second embodiment are used. The substrate processing apparatus according to this modification has the same configuration as the substrate processing apparatus 200 according to the second embodiment, but includes a second processing liquid supply pipe 82a instead of the second processing liquid supply pipe 82. Is different.

<Second treatment liquid supply pipe 82a>
The configuration of the second processing liquid supply pipe 82a according to this modification will be described more specifically with reference to FIG. FIG. 9A is a cross-sectional view of the first processing liquid supply pipe 81 and the second processing liquid supply pipe 82a with respect to the XZ plane. FIG. 9B is a side view of the second processing liquid supply pipe 82a viewed from the P9-P10 direction.

  The second processing liquid supply pipe 82 a is a pipe disposed in the sealed chamber 1 between both side surfaces of the sealed chamber 1 and the first processing liquid supply pipe 81, and each of the first processing liquid supply pipes 81. Is disposed adjacent to. However, the configuration of the first treatment liquid supply pipe 81 is the same as that of the second embodiment. A plurality of second discharge nozzles 821a and a plurality of third discharge nozzles 822a are attached to the second processing liquid supply pipe 82a. The configuration of the second discharge nozzle 821a is the same as that of the second discharge nozzle 821 according to the second embodiment. The third discharge nozzle 822a discharges the processing liquid in the direction AR822 toward the back surface of the sealing lid 12. The processing liquid discharged from each of the plurality of third discharge nozzles 822 a is supplied to the back surface of the sealing lid 12 that closes the sealed chamber 1.

  As shown in FIG. 9A, the second discharge nozzle 821a and the third discharge nozzle 822a are attached to the second processing liquid supply pipe 82a while forming a predetermined angle γ with respect to each other in the XZ plane. The angle γ is a direction AR821 from the central axis of the second processing liquid supply pipe 82a toward the substrate W supported in the processing tank 2, and a direction AR822 from the central axis toward the back surface of the sealing lid 12 that closes the processing tank 2. Is the angle formed by

  As shown in FIG. 9B, the plurality of third discharge nozzles 822a are disposed at predetermined intervals in the Y direction. The arrangement interval of the third discharge nozzles 822a is approximately the same as the arrangement interval of the second discharge nozzles 821.

  According to this configuration, when the control unit 7 opens the selection valve 941d and the second discharge valve 931 and supplies the fourth processing liquid (cleaning liquid) to the second processing liquid supply pipe 82a, the processing tank is supplied from the second discharge nozzle 821a. The cleaning liquid is discharged between the outer wall surface of 2 and the inner wall surface of the sealed chamber 1, and the outer wall surface of the processing tank 2 and the inner wall surface of the sealed chamber 1 are cleaned by the flow of the discharged cleaning liquid. The cleaning liquid is discharged from the third discharge nozzle 822a toward the back surface of the sealing lid 12, and the back surface of the sealing lid 12 is cleaned by the flow of the discharged cleaning liquid.

  In the above description, the third discharge nozzle 822a is attached to the second processing liquid supply pipe 82a. However, a third processing liquid supply pipe that forms a flow path independent of the second processing liquid supply pipe 82a is provided. The third discharge nozzle 822a may be attached to the third processing liquid supply pipe.

<3-3. effect>
According to the first modification and the second modification, the cleaning liquid is discharged from the third discharge nozzle 313a (in the case of the second modification, the third discharge nozzle 822a) toward the back surface of the sealing lid 12 in the cleaning process. Is done. As a result, not only the inner wall surface of the sealed chamber 1 and the outer wall surface of the treatment tank 2 but also the chemical solution attached to the back surface of the sealing lid 12 is washed away. According to this configuration, even if the chemical solution adheres to the back surface of the sealing lid 12 in the previous chemical treatment, the chemical solution does not vaporize and contaminate the substrate after the cleaning process.

[Other variations]
In each of the above embodiments, the cassette C in which a plurality of substrates W are stored in the processing tank 2 is placed, and the position of the placed cassette C is regulated by the cassette position regulating unit 22, thereby providing a substrate. Is supported at a predetermined position in the processing tank 2, but a plurality of substrates may be supported in the processing tank 2 by using a lifter (a mechanism for holding and lifting the plurality of substrates).

  In each of the above embodiments, the processing liquid supply systems 4 and 8 selectively supply any one of four types of processing liquids including the cleaning liquid to the injection pipe 21 and the processing liquid supply pipes 3 and 8. Although it is a piping system, the processing liquid supply systems 4 and 8 may be any piping system that selectively supplies at least two kinds of processing liquids including a cleaning liquid. For example, a first substrate processing apparatus including a processing liquid supply system that selectively supplies a first processing liquid (for example, alkaline chemical liquid) or a cleaning liquid to the injection pipe 21 and the processing liquid supply pipes 3 and 8; A second substrate processing apparatus including a processing liquid supply system that selectively supplies a processing liquid (for example, an acidic chemical liquid) or a cleaning liquid, and a third processing liquid (for example, a drying medium) or a cleaning liquid. A series of processes may be performed on the substrate using a third substrate processing apparatus including a processing liquid supply system. That is, in this case, the first to third substrate processing apparatuses are juxtaposed, and the first substrate processing apparatus performs the surface treatment and the cleaning process using the first processing liquid. Carrying in the second substrate processing apparatus to perform surface treatment and cleaning treatment with the second treatment liquid, and then carrying the substrate that has been treated into the third substrate processing apparatus to perform final rinse treatment and drying treatment. Can do. According to this modification, there is an advantage that the piping system can be simplified.

  Further, in the first embodiment, the first discharge nozzle 311 and the second discharge nozzle 312 are attached to the processing liquid supply pipe 3, and the second discharge nozzle 312 is further attached to the processing liquid supply pipe 3. You may provide the structure which can cover and close the discharge hole suitably. For example, the cross section of the processing liquid supply pipe 3 can be moved along the inner wall surface of the processing liquid supply pipe 3 and has a circular arc cross section that can cover and close the discharge hole of the second discharge nozzle 312 at a predetermined position. Insert the board. If such a configuration is provided, when it is not necessary to discharge the processing liquid supplied to the processing liquid supply pipe 3 from the second discharge nozzle 312 (for example, when chemical processing by shower supply is performed), control is performed. The part 7 can be moved to a position where the closing plate covers and closes the discharge hole of the second discharge nozzle 312, so that the processing liquid is not discharged from the second discharge nozzle 312. Thereby, it is possible to prevent the processing liquid from being discharged unnecessarily from the second discharge nozzle 312.

  In the second embodiment, the processing liquid supply unit is configured by the first processing liquid supply pipe 81, the injection pipe 21, and the first processing liquid supply system 9A. You may comprise a process liquid supply part by 9A. In this case, the processing liquid is supplied to the substrate supported in the processing tank 2 by supplying the processing liquid to the injection tube 21 and discharging the processing liquid from the injection hole 211 (that is, overflow supply). It will be. Further, the processing liquid supply unit may be configured by the first processing liquid supply pipe 81 and the processing liquid supply system 9A. In this case, the supply of the processing liquid to the substrate supported in the processing tank 2 is performed by supplying the processing liquid to the first processing liquid supply pipe 81 and discharging the processing liquid from the first discharge nozzle 811 (that is, , Shower supply).

It is a longitudinal cross-sectional view of the substrate processing apparatus which concerns on 1st Embodiment. It is a figure which shows the structure of piping and the control system with which the substrate processing apparatus which concerns on 1st Embodiment is provided. It is sectional drawing and a side view of a process liquid supply pipe. It is a figure which shows the flow of the substrate processing operation performed in the substrate processing apparatus which concerns on 1st Embodiment. It is a longitudinal cross-sectional view of the substrate processing apparatus which concerns on 2nd Embodiment. It is a figure which shows the structure of piping and the control system with which the substrate processing apparatus which concerns on 2nd Embodiment is provided. It is sectional drawing and a side view of a process liquid supply pipe. It is sectional drawing and a side view of a process liquid supply pipe. It is sectional drawing and a side view of a process liquid supply pipe.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Sealed chamber 2 Processing tank 3, 3a, 8 Processing liquid supply pipe 4 Processing liquid supply system 5 Waste liquid system 6 Exhaust system 7 Control part 81 1st processing liquid supply pipe 82, 82a 2nd processing liquid supply pipe 21 Injection pipe 22 Cassette Position restricting portion 31 Discharge nozzle 211 Injection holes 311, 311a, 811 First discharge nozzles 312, 312a, 821 Second discharge nozzles 313a, 822a Third discharge nozzle C Cassette W Substrate W

Claims (7)

A substrate processing apparatus for performing a surface treatment of a substrate,
A chamber capable of accommodating a substrate and making the inside a sealed space;
A treatment tank disposed in the chamber and capable of storing a treatment liquid;
A processing liquid supply pipe disposed in the chamber;
A treatment liquid supply system that selectively supplies either a cleaning liquid or a chemical as a treatment liquid to the treatment liquid supply pipe;
A first discharge nozzle that is attached to the processing liquid supply pipe and discharges the processing liquid in a direction toward the substrate supported in the processing tank;
The treatment liquid is attached to the treatment liquid supply pipe, discharges the treatment liquid in a direction between the outer wall surface of the treatment tank and the inner wall surface of the chamber, and is applied to the outer wall surface of the treatment tank and the inner wall surface of the chamber. A second discharge nozzle for supplying the treatment liquid;
Equipped with a,
In parallel with the discharge of the cleaning liquid from the first discharge nozzle, the cleaning liquid is discharged from the second discharge nozzle between the outer wall surface of the processing tank and the inner wall surface of the chamber, and the second discharge the substrate processing apparatus inner wall surface of the outer wall surface and the chamber of the processing tank is cleaned by the flow of the cleaning liquid discharged from the nozzle, characterized in Rukoto. The substrate processing apparatus according to claim 1,
A plurality of the first discharge nozzles and the second discharge nozzles are respectively attached to the processing liquid supply pipe;
The substrate processing apparatus, wherein the number of the second discharge nozzles attached to the processing liquid supply pipe is smaller than the number of the first discharge nozzles attached to the processing liquid supply pipe. The substrate processing apparatus according to claim 1, wherein:
A third discharge nozzle that is attached to the processing liquid supply pipe and discharges the processing liquid in a direction toward the back surface of the lid of the chamber;
A substrate processing apparatus comprising: A substrate processing apparatus for performing a surface treatment of a substrate,
A chamber capable of accommodating a substrate and making the inside a sealed space;
A treatment tank disposed in the chamber and capable of storing a treatment liquid;
A processing liquid supply unit for supplying a processing liquid to the substrate supported in the processing tank;
A cleaning liquid supply pipe disposed in the chamber;
A cleaning liquid supply system for supplying a cleaning liquid to the cleaning liquid supply pipe;
The cleaning liquid is attached to the cleaning liquid supply pipe and discharges the cleaning liquid in a direction between the outer wall surface of the processing tank and the inner wall surface of the chamber, and the cleaning liquid is applied to the outer wall surface of the processing tank and the inner wall surface of the chamber. A wall cleaning liquid discharge nozzle for supplying
Equipped with a,
The cleaning liquid is discharged from the wall surface cleaning liquid discharge nozzle between the outer wall surface of the processing tank and the inner wall surface of the chamber, and the outer wall surface of the processing tank is generated by the flow of the cleaning liquid discharged from the wall surface cleaning liquid discharge nozzle. and a substrate processing apparatus inner wall surface of said chamber and said Rukoto washed. The substrate processing apparatus according to claim 4,
The treatment liquid supply unit is
A processing liquid supply pipe disposed in the chamber;
A treatment liquid supply system that selectively supplies either a cleaning liquid or a chemical as a treatment liquid to the treatment liquid supply pipe;
A treatment liquid discharge nozzle that is attached to the treatment liquid supply pipe and discharges the treatment liquid in a direction toward the substrate supported in the treatment tank;
A substrate processing apparatus comprising: The substrate processing apparatus according to claim 4 or 5, wherein
A rear surface cleaning liquid discharge nozzle that is attached to the cleaning liquid supply pipe and discharges the cleaning liquid in a direction toward the rear surface of the lid of the chamber;
A substrate processing apparatus comprising: The substrate processing apparatus according to claim 5,
A rear surface cleaning liquid discharge nozzle that is attached to the cleaning liquid supply pipe and discharges the cleaning liquid in a direction toward the rear surface of the lid of the chamber;
With
The substrate processing apparatus, wherein discharge of the cleaning liquid from the back surface cleaning liquid discharge nozzle is performed in parallel with discharge of the cleaning liquid in a direction toward the substrate by the processing liquid discharge nozzle .

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