JP2015099851A - Substrate cleaning device and substrate processing device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a substrate cleaning device capable of supplying a jet flow of a binary fluid to a substrate while largely pulsating the binary fluid.SOLUTION: A substrate cleaning device comprises: a gas supply line 55 which supplies a gas into a gas chamber 60 in a binary fluid nozzle 42; a gas supply valve 71 which opens and closes a gas flow path of the gas supply line 55; a liquid supply line 57 which supplies liquid to a mixing chamber 61 in the binary fluid nozzle 42; a gas suction line 56 which sucks the gas in the gas chamber 60; a gas suction valve 73 which opens and closes a gas flow path of the gas suction line 56; and a valve control unit 75 which makes the gas supply valve 71 and the gas suction valve 73 repeat the opening and closing at the same cycle. When the gas supply valve 71 is closed, the gas suction valve 73 is open.

Description

  The present invention relates to a substrate cleaning apparatus for cleaning a substrate by supplying a two-fluid jet composed of a gas and a liquid to a substrate such as a wafer, and in particular, cleaning the substrate by supplying the two-fluid jet to the surface of a polished substrate. The present invention relates to a substrate cleaning apparatus. The substrate cleaning apparatus of the present invention can be applied to cleaning not only a wafer having a diameter of 300 mm but also a wafer having a diameter of 450 mm, and further, a flat panel manufacturing process, an image sensor manufacturing process such as CMOS and CCD, and a magnetic film manufacturing process of MRAM. It is also possible to apply it.

  With the recent miniaturization of semiconductor devices, various material films having different physical properties are formed on a substrate and the material films are processed. In particular, in a damascene wiring formation process in which a wiring groove formed in an insulating film is filled with metal, excess metal is polished and removed by a substrate polishing apparatus after the metal film is formed. Various films such as a metal film, a barrier film, and an insulating film exist on the surface of the substrate after polishing. In these films exposed on the substrate surface, there are residues such as slurry and polishing debris used in polishing. In order to remove such residues, the polished substrate is transported to a substrate cleaning apparatus, and the substrate surface is cleaned.

  If the surface of the substrate is not sufficiently cleaned, problems such as current leakage due to residue and poor adhesion will occur. Therefore, in the manufacture of semiconductor devices, the cleaning of the substrate is an important process for improving the yield of products.

  2. Description of the Related Art As a device for cleaning a substrate, a two-fluid cleaning device that supplies a two-fluid jet composed of a mixed fluid of gas and liquid to the surface of the substrate is known. As shown in FIG. 7, this two-fluid cleaning apparatus supplies a two-fluid jet from the two-fluid nozzle 100 to the surface of the substrate W while moving the two-fluid nozzle 100 in parallel with the surface of the substrate W, Remove existing particles such as abrasive grains and polishing debris.

  FIG. 8 is a schematic diagram showing the structure of the two-fluid cleaning device shown in FIG. As shown in FIG. 8, the two-fluid nozzle 100 includes a gas supply line 155 that supplies gas to the gas chamber 160 inside the two-fluid nozzle 100, and a liquid supply line 157 that supplies liquid to the mixing chamber 161 in the two-fluid nozzle 100. And are connected. The two-fluid nozzle 100 has a gas introduction port 164 at the upper portion thereof, and the gas supply line 155 is connected to the two-fluid nozzle 100 via the gas introduction port 164.

  The liquid supply line 157 extends downward through the gas chamber 160 in the two-fluid nozzle 100, and the liquid outlet 157 a of the liquid supply line 157 is located inside the two-fluid nozzle 100. The gas chamber 160 is located above the liquid outlet 157 a of the liquid supply line 157, and the mixing chamber 161 is located below the liquid outlet 157 a of the liquid supply line 157. A liquid such as pure water is supplied to the mixing chamber 161 in the two-fluid nozzle 100 through the liquid supply line 157.

  The gas supply line 155 is provided with a gas supply valve 171 and a filter 172. A gas (for example, an inert gas such as nitrogen gas) flowing through the gas supply line 155 passes through the gas supply valve 171 and the filter 172 in this order, and flows into the gas chamber 160 of the two-fluid nozzle 100 through the gas introduction port 164. . As the gas supply valve 171, a flow control valve (for example, a mass flow controller), an air operation valve, an on-off valve (ON-OFF valve), or the like is used.

  The liquid and gas are mixed in the mixing chamber 161 to form a high-pressure two fluid. While the gas is supplied to the gas chamber 160, as shown in FIG. 9, the gas supply valve 171 is opened and closed with a short cycle (for example, 0.1 to 1.0 seconds). Therefore, the gas is intermittently supplied to the gas chamber 160, and as a result, the flow rates of the two fluids change periodically. A jet of two fluids pulsating in this way is supplied to the surface of the substrate, and abrasive grains and polishing debris are removed from the surface of the substrate.

JP 2005-12197 A JP 2013-89797 A

  When the gas supply valve 171 is periodically opened and closed, the flow rate of the two fluids formed in the mixing chamber 161 is also expected to pulsate according to the gas flow rate. However, when the gas supply valve 171 opens and closes in a short cycle, due to the residual pressure existing in the gas chamber 160, the amplitude of the flow rate of the two fluids becomes smaller than expected, as shown in FIG. As a result, the cleaning effect of the two-fluid jet is reduced.

  The present invention has been made to solve the above-described problems, and an object of the present invention is to provide a substrate cleaning apparatus that can supply a two-fluid jet to a substrate while greatly pulsating the two-fluid jet. To do. Moreover, an object of this invention is to provide the substrate processing apparatus provided with such a substrate cleaning apparatus.

  In order to achieve the above-described object, one embodiment of the present invention includes a substrate holding portion that holds a substrate, a two-fluid nozzle that supplies a two-fluid jet to the surface of the substrate, and a gas chamber in the two-fluid nozzle. A gas supply line for supplying gas, a gas supply valve for opening and closing a gas flow path of the gas supply line, a liquid supply line for supplying a liquid to the mixing chamber in the two-fluid nozzle, and the gas in the gas chamber. A gas suction line for suction, a gas suction valve for opening and closing a gas flow path of the gas suction line, and a valve control unit for causing the gas supply valve and the gas suction valve to repeat opening and closing operations at the same cycle, The substrate cleaning apparatus according to claim 1, wherein when the supply valve is in a closed state, the gas suction valve is in an open state.

In a preferred aspect of the present invention, the gas suction valve is opened at the same time as the gas supply valve is closed.
In a preferred aspect of the present invention, the gas suction valve is opened before the gas supply valve is closed.
In a preferred aspect of the present invention, the gas suction line is connected to the two-fluid nozzle via a gas discharge port located above the mixing chamber.
In a preferred aspect of the present invention, the period is 0.1 to 1.0 seconds.

  Another aspect of the present invention is a substrate processing apparatus comprising a polishing unit for polishing a substrate and the substrate cleaning apparatus for cleaning the substrate polished by the polishing unit.

  According to the present invention, the supply of gas to the gas chamber of the two-fluid nozzle and the suction of gas are alternately repeated. That is, the gas is supplied to the gas chamber with the residual pressure in the gas chamber removed. Therefore, the flow rates of the two fluids can be greatly varied, and as a result, the substrate can be efficiently cleaned.

It is a top view which shows the whole structure of the substrate processing apparatus provided with the substrate cleaning apparatus which concerns on embodiment of this invention. It is a perspective view which shows the board | substrate cleaning apparatus which concerns on embodiment of this invention currently used for the 2nd cleaning unit. It is a schematic diagram which shows the structure of a board | substrate cleaning apparatus. It is a graph which shows the open / close state of a gas supply valve and a gas suction valve. It is a graph which shows the flow volume of two fluids when the gas supply valve and the gas suction valve are opened and closed periodically at the timing shown in FIG. It is a graph which shows the open / close state of the gas supply valve and gas suction valve in other embodiment. It is a schematic diagram which shows the conventional two fluid washing | cleaning apparatus. It is a schematic diagram which shows the structure of the two fluid washing | cleaning apparatus shown in FIG. It is a graph which shows the open / close state of a gas supply valve. It is a graph which shows the flow volume of two fluids when the gas supply valve is opening and closing periodically at the timing shown in FIG.

  Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a plan view showing an overall configuration of a substrate processing apparatus including a substrate cleaning apparatus according to an embodiment of the present invention. As shown in FIG. 1, the substrate processing apparatus includes a substantially rectangular housing 10 and a load port 12 on which a substrate cassette that accommodates a large number of wafers and other substrates is placed. The load port 12 is disposed adjacent to the housing 10. The load port 12 can be mounted with an open cassette, a SMIF (Standard Manufacturing Interface) pod, or a FOUP (Front Opening Unified Pod). SMIF and FOUP are sealed containers that can maintain an environment independent of the external space by accommodating a substrate cassette inside and covering with a partition wall.

  Inside the housing 10, a plurality of (four in this embodiment) polishing units 14a to 14d, a first cleaning unit 16 and a second cleaning unit 18 for cleaning the substrate after polishing, and a substrate after cleaning are dried. A drying unit 20 is accommodated. The polishing units 14a to 14d are arranged along the longitudinal direction of the substrate processing apparatus, and the cleaning units 16, 18 and the drying unit 20 are also arranged along the longitudinal direction of the substrate processing apparatus.

  In a region surrounded by the load port 12, the polishing unit 14a, and the drying unit 20, a first substrate transfer robot 22 is disposed, and a substrate transfer unit 24 is disposed in parallel with the polishing units 14a to 14d. The first substrate transfer robot 22 receives the substrate before polishing from the load port 12 and passes it to the substrate transfer unit 24, and receives the dried substrate from the drying unit 20 and returns it to the load port 12. The substrate transport unit 24 transports the substrate received from the first substrate transport robot 22 and delivers the substrate to and from each of the polishing units 14a to 14d. Each polishing unit polishes the surface of a substrate by bringing a substrate such as a wafer into sliding contact with the polishing surface while supplying a polishing liquid (slurry) to the polishing surface.

  A second substrate transport robot 26 is disposed between the first cleaning unit 16 and the second cleaning unit 18 to transport the substrate between the cleaning units 16 and 18 and the substrate transport unit 24, and the second cleaning is performed. A third substrate transport robot 28 is disposed between the unit 18 and the drying unit 20 to transport the substrate between the units 18 and 20. Further, an operation control unit 30 that controls the movement of each unit of the substrate processing apparatus is disposed inside the housing 10.

  As the first cleaning unit 16, there is used a substrate cleaning apparatus that cleans a substrate by rubbing a roll sponge on both the front and back surfaces of the substrate in the presence of a chemical solution. As the second cleaning unit 18, a two-fluid type substrate cleaning apparatus according to an embodiment of the present invention is used. Further, as the drying unit 20, a spin drying apparatus is used that dries the substrate by holding the substrate, ejecting IPA vapor from a moving nozzle to dry the substrate, and rotating the substrate at a high speed.

  The substrate is polished by at least one of the polishing units 14a to 14d. The polished substrate is cleaned by the first cleaning unit 16 and the second cleaning unit 18, and the cleaned substrate is dried by the drying unit 20.

  FIG. 2 is a perspective view showing the substrate cleaning apparatus according to the embodiment of the present invention used in the second cleaning unit 18. As shown in FIG. 2, the substrate cleaning apparatus includes a substrate holding unit 41 that horizontally holds and rotates a wafer W, which is an example of a substrate, and a two-fluid nozzle 42 that supplies a two-fluid jet to the upper surface of the wafer W. And a nozzle arm 44 for holding the two-fluid nozzle 42. A gas supply line 55, a gas suction line 56, and a liquid supply line 57 are connected to the two-fluid nozzle 42.

  The substrate holder 41 includes a plurality of (four in FIG. 2) chucks 45 that hold the peripheral edge of the wafer W, and a motor 48 connected to the chucks 45. The chuck 45 holds the wafer W horizontally, and in this state, the wafer W is rotated around its central axis by a motor 48.

  The two-fluid nozzle 42 is disposed above the wafer W. A two-fluid nozzle 42 is attached to one end of the nozzle arm 44, and a turning shaft 50 is connected to the other end of the nozzle arm 44. The two-fluid nozzle 42 is connected to the nozzle moving mechanism 51 via the nozzle arm 44 and the turning shaft 50. More specifically, a nozzle moving mechanism 51 that turns the nozzle arm 44 is connected to the turning shaft 50. The nozzle moving mechanism 51 turns the nozzle arm 44 in a plane parallel to the wafer W by rotating the turning shaft 50 by a predetermined angle. The two-fluid nozzle 42 supported by the nozzle arm 44 moves in the radial direction of the wafer W as the nozzle arm 44 turns.

  The nozzle moving mechanism 51 is connected to a nozzle lifting / lowering mechanism 52 that moves the turning shaft 50 up and down, so that the two-fluid nozzle 42 can move up and down relatively with respect to the wafer W. . The nozzle lifting mechanism 52 functions as a distance adjusting mechanism that changes the distance between the two-fluid nozzle 42 and the surface of the wafer W.

  The wafer W is cleaned as follows. First, the substrate holder 41 rotates the wafer W around its central axis. In this state, the two-fluid nozzle 42 supplies a two-fluid jet to the upper surface of the wafer W, and further moves in the radial direction of the wafer W. The upper surface of the wafer W is cleaned by a two-fluid jet.

  FIG. 3 is a schematic diagram showing the structure of the substrate cleaning apparatus. As shown in FIG. 3, the two-fluid nozzle 42 includes a gas supply line 55 that supplies gas to the gas chamber 60 formed therein, and a liquid in the mixing chamber 61 that is formed in the two-fluid nozzle 42. Is connected to a liquid supply line 57 for supplying gas and a gas suction line 56 for sucking the gas in the gas chamber 60.

  The two-fluid nozzle 42 has a gas introduction port 64 at an upper portion thereof, and a gas supply line 55 is connected to the two-fluid nozzle 42 via the gas introduction port 64. The two-fluid nozzle 42 further has a gas discharge port 65 at the top thereof, and a gas suction line 56 is connected to the two-fluid nozzle 42 via the gas discharge port 65. The gas introduction port 64 is located above the gas discharge port 65.

  The liquid supply line 57 extends downward through the gas chamber 60 of the two-fluid nozzle 42, and the liquid outlet 57 a of the liquid supply line 57 is located inside the two-fluid nozzle 42. The gas chamber 60 is located above the liquid outlet 57 a of the liquid supply line 57, and the mixing chamber 61 is located below the liquid outlet 57 a of the liquid supply line 57. The gas chamber 60 and the mixing chamber 61 communicate with each other.

  A liquid such as pure water is supplied to the mixing chamber 61 in the two-fluid nozzle 42 through the liquid supply line 57. The liquid may be transferred in the liquid supply line 57 while being pressurized by the pump, or transferred in the liquid supply line 57 by being drawn by the negative pressure formed in the two-fluid nozzle 42 by the gas suction line 56. May be.

  The gas discharge port 65 is located above the mixing chamber 61 in the two-fluid nozzle 42 (that is, above the liquid outlet 57 a of the liquid supply line 57) so that the gas suction line 56 does not suck the liquid in the two-fluid nozzle 42. ) Is arranged.

  The gas supply line 55 is provided with a gas supply valve 71 and a filter 72. A gas (for example, an inert gas such as nitrogen gas) flowing through the gas supply line 55 passes through the gas supply valve 71 and the filter 72 in this order, and flows into the gas chamber 60 of the two-fluid nozzle 42 through the gas introduction port 64. . The liquid from the liquid supply line 57 and the gas from the gas supply line 55 are mixed in the mixing chamber 61 to form two high-pressure fluids.

  The gas supply valve 71 operates to repeatedly open and close the gas flow path of the gas supply line 55 at a predetermined cycle. Therefore, gas is intermittently supplied to the gas chamber 60, and as a result, the flow rates of the two fluids change periodically. A jet of two fluids pulsating in this way is supplied to the surface of the substrate, and abrasive grains and polishing debris are removed from the surface of the substrate.

  A vacuum source 67 such as a vacuum pump is connected to the gas suction line 56. The gas suction line 56 is provided with a gas suction valve 73. The gas suction valve 73 operates to repeatedly open and close the gas flow path of the gas suction line 56 at the same cycle as the gas supply valve 71. Therefore, the gas suction line 56 intermittently sucks the gas in the gas chamber 60. As the gas supply valve 71 and the gas suction valve 73, a flow rate control valve (for example, a mass flow controller), an air operation valve, an on-off valve (ON-OFF valve), or the like is used.

  While the liquid is supplied to the mixing chamber 61, the gas supply valve 71 and the gas suction valve 73 are opened and closed so that the supply of the gas to the gas chamber 60 and the suction of the gas from the gas chamber 60 are alternately repeated. It is repeated at a predetermined cycle (for example, 0.1 to 1.0 seconds). The gas supply valve 71 and the gas suction valve 73 are connected to the valve control unit 75, and the opening and closing operations of the gas supply valve 71 and the gas suction valve 73 are controlled by the valve control unit 75.

  FIG. 4 is a graph showing the open / closed state of the gas supply valve 71 and the gas suction valve 73. In FIG. 4, the vertical axis indicates whether the gas supply valve 71 and the gas suction valve 73 are open or closed, and the horizontal axis indicates time. As can be seen from FIG. 4, the gas supply valve 71 and the gas suction valve 73 repeat the opening / closing operation in the same cycle, but the opening / closing state of the gas suction valve 73 is opposite to the opening / closing state of the gas supply valve 71. That is, the gas suction valve 73 is closed at the same time as the gas supply valve 71 is opened, and the gas suction valve 73 is opened at the same time as the gas supply valve 71 is closed.

  Thus, by alternately opening and closing the gas supply valve 71 and the gas suction valve 73 at the same cycle, the supply of gas to the gas chamber 60 and the suction of gas from the gas chamber 60 are performed alternately. Opening and closing operations of the gas supply valve 71 and the gas suction valve 73 are controlled by a valve control unit 75. As shown in FIG. 4, the valve control unit 75 is configured to cause the gas supply valve 71 and the gas suction valve 73 to repeat the opening / closing operation at the same cycle.

  When the gas supply valve 71 is closed, the gas suction valve 73 is open. The gas in the gas chamber 60 is sucked through the gas suction line 56, and the residual pressure in the gas chamber 60 is removed. FIG. 5 is a graph showing the flow rates of the two fluids when the gas supply valve 71 and the gas suction valve 73 are periodically opened and closed at the timing shown in FIG. Since the residual pressure in the gas chamber 60 is removed before the gas is supplied to the gas chamber 60, the two-fluid jet pulsates greatly as shown in FIG. 5, and as a result, the surface of the substrate is cleaned with high efficiency. can do.

  FIG. 6 is a graph showing the open / close state of the gas supply valve 71 and the gas suction valve 73 in another embodiment. Since the configuration and operation that are not particularly described are the same as those in the above-described embodiment, redundant description thereof is omitted. This embodiment is the same as the embodiment described above in that the gas suction valve 73 is closed at the same time as the gas supply valve 71 is opened, but is different in that the gas suction valve 73 is opened before the gas supply valve 71 is closed. . The opening / closing cycle of the gas suction valve 73 is the same as the opening / closing cycle of the gas supply valve 71.

  According to the embodiment shown in FIG. 6, the residual pressure is removed without delay when the gas supply valve 71 is closed. Also in this case, when the gas supply valve 71 is closed, the gas suction valve 73 is open. The supply of the gas to the gas chamber 60 and the suction of the gas from the gas chamber 60 are alternately repeated, and the flow rates of the two fluids pulsate substantially as in the graph shown in FIG. Therefore, the surface of the substrate can be cleaned with high efficiency by the two-fluid jet.

  While the gas supply valve 71 is in the closed state, the gas suction valve 73 may not always be in the open state. For example, the gas suction valve 73 may be closed immediately before the gas supply valve 71 is opened (that is, when the gas supply valve 71 is in a closed state).

  The embodiment described above is described for the purpose of enabling the person having ordinary knowledge in the technical field to which the present invention belongs to implement the present invention. Various modifications of the above embodiment can be naturally made by those skilled in the art, and the technical idea of the present invention can be applied to other embodiments. Accordingly, the present invention is not limited to the described embodiments, but is to be construed in the widest scope according to the technical idea defined by the claims.

10 Housing 12 Load Ports 14a to 14d Polishing Unit 16 First Cleaning Unit 18 Second Cleaning Unit 20 Drying Unit 22 First Substrate Transfer Robot 24 Substrate Transfer Unit 26 Second Substrate Transfer Robot 28 Third Substrate Transfer Robot 30 Operation Control Unit 41 Substrate holder 42 Two-fluid nozzle 44 Nozzle arm 45 Chuck 48 Motor 50 Rotating shaft 51 Nozzle moving mechanism 52 Nozzle lifting mechanism (distance adjusting mechanism)
55 Gas supply line 56 Gas suction line 57 Liquid supply line 60 Gas chamber 61 Mixing chamber 64 Gas introduction port 65 Gas discharge port 67 Vacuum source 71 Gas supply valve 72 Filter 73 Gas suction valve 75 Valve controller

Claims (6)

A substrate holder for holding the substrate;
A two-fluid nozzle for supplying a two-fluid jet to the surface of the substrate;
A gas supply line for supplying gas to the gas chamber in the two-fluid nozzle;
A gas supply valve for opening and closing the gas flow path of the gas supply line;
A liquid supply line for supplying a liquid to the mixing chamber in the two-fluid nozzle;
A gas suction line for sucking the gas in the gas chamber;
A gas suction valve for opening and closing the gas flow path of the gas suction line;
A valve control unit that causes the gas supply valve and the gas suction valve to repeat opening and closing operations at the same cycle;
The substrate cleaning apparatus, wherein the gas suction valve is in an open state when the gas supply valve is in a closed state.   The substrate cleaning apparatus according to claim 1, wherein the gas suction valve opens simultaneously with the gas supply valve closing.   The substrate cleaning apparatus according to claim 1, wherein the gas suction valve is opened before the gas supply valve is closed.   The substrate cleaning apparatus according to claim 1, wherein the gas suction line is connected to the two-fluid nozzle through a gas discharge port located above the mixing chamber.   The substrate cleaning apparatus according to claim 1, wherein the cycle is 0.1 to 1.0 seconds. A polishing unit for polishing a substrate;
A substrate processing apparatus comprising the substrate cleaning apparatus according to claim 1, wherein the substrate polished by the polishing unit is cleaned.

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