JP2007073610A - Method and device for cleaning component - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method and a device for cleaning components having higher efficiency and cleaning effect regardless of the size of particles on an object to be cleaned. <P>SOLUTION: A substrate is cleaned by jetting a deionized water as a cleaning liquid in which nitrogen (inert gas) is added as a secondary element to a substrate from a cleaning nozzle. A control means, in a cleaning step, periodically fluctuates at least deionized water flow rate or nitrogen flow rate for cleaning, by switching between a first cleaning state in which nitrogen is added to the deionized water at predetermined rate and a second cleaning state in which the rate of nitrogen added to the deionized water is lower than that in the first cleaning state. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a component cleaning apparatus and a component cleaning method, and more particularly to a component cleaning apparatus and a component cleaning method used for cleaning a silicon semiconductor substrate or the like.

  A semiconductor device is formed, for example, through a film forming process in which a thin film is stacked on a silicon substrate by CVD (Chemical Vapor Deposition) or PVD (Physical Vapor Deposition), an etching process in which patterning is performed by chemical or physical etching, and the like. The In such a semiconductor process, foreign matters such as residues (hereinafter referred to as particles) generated by various processes may adhere to the substrate. Examples of the particles include alumina, silicon nitride, and silicon oxide films generated in the film formation process, etching residues such as Al, Au, and Ti generated in the etching process, resist residues in the resist ashing process, or in a processing atmosphere. Or particles (Na, Fe, SUS, etc.) that existed in the processing apparatus.

  In order to remove such particles, it is necessary in the manufacturing process to clean the substrate. As a cleaning apparatus used in the substrate cleaning process, for example, a cleaning liquid such as pure water and a gas such as air or nitrogen are mixed in the cleaning nozzle to make the cleaning liquid into droplets. There has been proposed a two-fluid cleaning apparatus that sprays and cleans a substrate as an object to be cleaned (for example, see Patent Document 1). In addition, a high frequency vibrator is provided in the cleaning nozzle, and a high frequency vibrator (megasonic) of several tens of kHz to several MHz is provided to the cleaning liquid by this high frequency vibrator, and one that aims at a particle removal effect has been proposed (for example, Patent Document 2).

JP 2004-335671 A JP 2002-110608 A

  In the two-fluid cleaning device in which a gas is mixed with a cleaning liquid as in Patent Document 1, the flow rate of the cleaning liquid, the flow rate of the gas, and the like are given as parameters related to cleaning. Further, in the cleaning apparatus using megasonic as in the above-mentioned Patent Document 2, there is a high frequency vibration output (oscillator current value) and the like as parameters relating to cleaning.

  In general, in the cleaning apparatus as described above, various parameters can be arbitrarily set. Usually, in one cleaning process, the parameters are fixedly fixed. However, the particles adhering to the surface of the substrate vary in size. Therefore, even if cleaning is performed with various parameters fixed, it is considered difficult to remove all particles without leaving them. Therefore, it is necessary to change the parameter every time the cleaning process is performed once, and there is a problem that the operation is complicated and inefficient.

  The present invention has been made in view of such circumstances, and a purpose thereof is a parts cleaning apparatus capable of obtaining an efficient and higher cleaning effect regardless of the size of particles on an object to be cleaned. And a method for cleaning parts.

In order to achieve the above object, a component cleaning apparatus of the present invention includes a cleaning nozzle that injects a cleaning liquid, a cleaning liquid supply unit that supplies the cleaning liquid to the cleaning nozzle, and a secondary element that can be mixed or transmitted to the cleaning liquid. Secondary element adding means to be added to, and a control means for controlling the flow rate of the cleaning liquid by the cleaning liquid supply means and the amount of secondary element added by the secondary element adding means,
A component cleaning device for cleaning the object to be cleaned by spraying the cleaning liquid to which the secondary element is added from the cleaning nozzle toward the object to be cleaned,
In the cleaning process, the control means periodically changes at least one of the flow rate of the cleaning liquid or the additional amount of the secondary element, thereby causing the first cleaning state in which the secondary element is added to the cleaning liquid at a predetermined ratio. The second cleaning state in which the ratio of the secondary element added to the cleaning liquid is lower than the first cleaning state is alternately converted.
The “secondary element” means an element added to the cleaning liquid in order to enhance the cleaning effect, such as a gas such as an inert gas, a vibration such as a high-frequency vibration, or a pressure.

  According to the above configuration, in the cleaning process, the first cleaning state in which the secondary element is added to the cleaning liquid at a predetermined ratio by periodically changing at least one of the flow rate of the cleaning liquid or the additional amount of the secondary element. And the second cleaning state in which the ratio of the secondary elements added to the cleaning liquid is alternately lower than the first cleaning state, so that the cleaning effect by adding the additional elements to the cleaning liquid in one cleaning step A cleaning effect different from the cleaning effect by spraying the cleaning liquid in a state where the additional amount of the additional element is suppressed, that is, the cleaning effect by spraying the cleaning liquid as it is, is obtained in one cleaning process. Can do. This makes it possible to remove particles on the substrate efficiently and more reliably regardless of the size of the particles.

  In the above configuration, the control means fluctuates the flow rate of the cleaning liquid and the additional amount of the secondary element in a predetermined cycle so that the fluctuation cycle of the cleaning liquid flow rate and the fluctuation cycle of the secondary element addition amount are opposite to each other. It is desirable to make it.

  In the above configuration, the control means may be configured to vary the additional amount of the secondary element at a predetermined period in a state where the flow rate of the cleaning liquid is constant.

  Further, in the above configuration, the control means can change the flow rate of the cleaning liquid at a predetermined cycle in a state where the added amount of the secondary element is constant.

  In each of the above-described configurations, it is desirable to change the pressure of the cleaning liquid in synchronization with the change in the flow rate of the cleaning liquid.

  According to this configuration, when the pure water pressure is increased in accordance with the increase in the pure water flow rate, the cleaning liquid is injected at a higher pressure, so that the cleaning effect in the second cleaning state can be further improved. .

In each of the above configurations, the secondary element adding means adds an inert gas to the cleaning liquid as the secondary element,
Preferably, the control means controls the addition amount of the inert gas as the secondary element by increasing or decreasing the flow rate of the inert gas by the secondary element addition means.

  According to this configuration, since the addition ratio of the inert gas to the flow rate of the cleaning liquid is further increased in the first cleaning state, the cleaning liquid has a smaller particle size due to the collision between the inert gas and the cleaning liquid in the cleaning nozzle. It is possible to promote the removal of minute particles by discharging the droplets from the cleaning nozzle. In particular, for example, even when particles exist in a trench groove formed in a semiconductor substrate as an object to be cleaned, droplets discharged from the cleaning nozzle can enter the trench groove, and particles in the groove It is possible to make the droplets directly collide with each other. As a result, this particle removal effect can be enhanced. In contrast, in the second cleaning state, the addition amount of the inert gas with respect to the flow rate of the cleaning liquid is lower than that in the first cleaning state, so that droplets having a larger particle diameter are ejected from the cleaning nozzle. Since the kinetic energy of the droplets increases as the particle size increases, removal of particles present on the substrate surface other than the trench grooves can be promoted.

Further, in each of the above configurations, the secondary element adding means has a high frequency vibration source, and operates the high frequency vibration source to add high frequency vibration to the cleaning liquid as the secondary element.
The control means may employ a configuration in which the amount of high frequency vibration as a secondary element is controlled by increasing or decreasing the current value of the high frequency vibration source of the secondary element adding means.

  According to this configuration, in the first cleaning state, the output of the high-frequency vibration applied to the cleaning liquid increases, so that the separation of particles on the object to be cleaned can be promoted by this high-frequency impact. On the other hand, in the second cleaning state, the output of the high-frequency vibration applied to the cleaning liquid is lower than that in the first cleaning state. Therefore, in this second cleaning state, mainly by injecting pure water as it is, It is possible to promote the removal of particles that have been separated in one cleaning state.

In addition, the component cleaning method of the present invention adds a secondary element that can be mixed or transmitted to the cleaning liquid to the cleaning liquid, and sprays the cleaning liquid with the secondary element added from the nozzle toward the object to be cleaned. A component cleaning method for performing a cleaning process for cleaning the object to be cleaned,
In the cleaning step, a first cleaning state in which secondary elements added to the cleaning liquid are added at a predetermined rate by periodically changing at least one of the flow rate of the cleaning liquid or the additional amount of the secondary elements; The second cleaning state in which the ratio of the secondary element added to the cleaning liquid is lower than the first cleaning state is alternately converted.

  According to the above configuration, in the cleaning process, the first cleaning state in which the secondary element is added to the cleaning liquid at a predetermined ratio by periodically changing at least one of the flow rate of the cleaning liquid or the additional amount of the secondary element. And the second cleaning state in which the ratio of the secondary elements added to the cleaning liquid is alternately lower than the first cleaning state, so that the cleaning effect by adding the additional elements to the cleaning liquid in one cleaning step The cleaning effect obtained by jetting pure water while suppressing the additional amount of additional elements, that is, the cleaning effect obtained by jetting pure water as it is, is obtained in a single cleaning step. be able to. This makes it possible to remove particles on the substrate efficiently and more reliably regardless of the size of the particles.

  The best mode for carrying out the present invention will be described below with reference to the accompanying drawings. In the embodiments described below, various limitations are made as preferred specific examples of the present invention. However, the scope of the present invention is not limited to the following description unless otherwise specified. However, the present invention is not limited to these embodiments.

  FIG. 1 is a schematic diagram illustrating the configuration of a component cleaning apparatus to which the present invention is applied. The illustrated component cleaning apparatus 1 includes a cleaning stage 2 for cleaning an object to be cleaned, a cleaning nozzle 3 for ejecting liquid droplets onto the object to be cleaned, and a nozzle moving mechanism 4 for moving the cleaning nozzle 3 up and down. A cleaning liquid supply line 5 for supplying a cleaning liquid from a cleaning liquid supply source (not shown) to the cleaning nozzle 3, and a gas supply line 6 for supplying an inert gas from a gas supply source (not shown) to the cleaning nozzle 3. A liquid flow controller (LFC) 7 for controlling the flow rate of the cleaning liquid supplied to the cleaning liquid nozzle 3, and a gas flow rate controller (MFC: Mass) for controlling the flow rate of the inert gas supplied to the cleaning liquid nozzle 3. (Flow Controller) 8 and a control unit 9 that controls each unit in an integrated manner based on a cleaning program.

  The cleaning stage 2 includes a drive motor 11 made of, for example, a step motor or a servo motor, and a spin chuck 13 connected to the tip of the rotary shaft 12 of the drive motor 11. The spin chuck 13 has a support pin 13 ′ standing on the upper surface facing the nozzle 3, and supports the peripheral portion of a semiconductor substrate (hereinafter simply referred to as a substrate) 10 as an object to be cleaned by the support pin 13 ′. It has become. When the drive motor 11 is driven, the substrate 10 supported by the spin chuck 13 rotates about the rotation shaft 12. The rotation speed and the like of the substrate 10 are controlled by the control unit 9. Although not shown, a shielding plate is disposed around the cleaning stage 2 so as to surround the spin chuck 13, and the shielding plate prevents scattering of the cleaning liquid.

  The cleaning nozzle 3 is supported by the support arm 15 of the nozzle moving mechanism 4 so that the discharge opening 3 a faces the surface of the substrate 10. The cleaning nozzle 3 includes a cleaning liquid supply line 5 for supplying pure water as a cleaning liquid from a cleaning liquid supply source (corresponding to the cleaning liquid supply means in the present invention), and nitrogen as a kind of inert gas from the gas supply source (in the present invention). A gas supply line 6 (corresponding to the secondary element adding means in the present invention) is connected to supply pure water and nitrogen from the lines 5 and 6 in the nozzle. It is configured to form droplets and discharge (spray) the droplets onto the substrate 10 disposed on the cleaning stage 2. That is, the substrate surface is cleaned by causing the droplets to collide with the surface of the substrate 10. That is, the cleaning nozzle 3 constitutes a two-fluid cleaning nozzle that mixes and injects gas and liquid. The illustrated cleaning nozzle 3 is arranged in a posture in which the central axis of the discharge opening 3 a is substantially perpendicular to the surface of the substrate 10, but may be arranged in a posture inclined with respect to the substrate 10.

  A liquid flow rate regulator 7 is connected to the cleaning liquid supply line 5, and the supply amount (flow rate) of pure water to the cleaning nozzle 3 can be adjusted by the liquid flow rate regulator 7. On the other hand, a gas flow rate regulator 8 is connected to the gas supply line 6, and the flow rate of nitrogen to the cleaning liquid nozzle 3 (addition amount of nitrogen to the cleaning liquid) is adjusted by the gas flow rate regulator 8. Yes. The flow rate of pure water in the liquid flow rate regulator 7 and the flow rate of nitrogen in the gas flow rate regulator 8 are fed back to the control unit 9, and the control unit 9, based on these feedbacks, 8 can control the flow rate adjustment. That is, the control unit 9, the liquid flow rate adjuster 7, and the gas flow rate adjuster 8 function as control means in the present invention. The cleaning liquid supply line 5 is provided with a pressure control valve (not shown), and the controller 9 can adjust the pressure of pure water by controlling the pressure control valve. .

  The size of the liquid droplets ejected from the cleaning nozzle 3 can be set by adjusting the flow rates of pure water and air with the liquid flow rate regulator 7 and the gas flow rate regulator 8. For example, as the flow rate of nitrogen with respect to pure water is increased, pure water is finely divided by collision of pure water and nitrogen, and droplets with smaller particle diameters are obtained. Conversely, the smaller the flow rate of nitrogen relative to pure water, the larger the droplets. In the cleaning process, the control unit 9 controls the liquid flow rate regulator 7 and the gas flow rate regulator 8 to periodically change at least one of the pure water flow rate and the nitrogen flow rate (addition amount). The first cleaning state in which nitrogen is added to the cleaning liquid at a predetermined ratio and the second cleaning state in which the ratio of nitrogen added to the cleaning liquid is lower than the first cleaning state are alternately converted. Details of this point will be described later.

  The nozzle moving mechanism 4 includes a rotating mechanism 18 that rotates the cleaning nozzle 3 and an elevating mechanism 19 that moves the rotating mechanism 18 up and down. The rotation mechanism 18 includes a support arm 15, a rotation shaft 16, and a rotation motor 17. The support arm 15 has the cleaning nozzle 3 fixed to the tip thereof, and is connected to the rotary shaft 16 of the rotary motor 17 in a posture substantially parallel to the surface of the substrate 10 supported by the spin chuck 13. The rotation motor 17 is composed of, for example, a step motor, a servo motor, and the like, and the rotation direction and the rotation angle are controlled by the control unit 9. When the rotary motor 17 is operated, the cleaning nozzle 3 scans in the surface direction of the substrate 10 with the rotary shaft 16 as the center.

  The elevating mechanism 19 includes an elevating cylinder 20, a support rod 21 that moves forward and backward from the elevating cylinder 20, and a bracket 22 provided at the upper end portion of the support rod 21. I support it. The elevating cylinder 20 drives the support rod 21 up and down by, for example, hydraulic control. The elevating mechanism 19 moves the rotating mechanism 18 up and down by driving the elevating cylinder 20 under the control of the control unit 9. Thereby, the cleaning nozzle 3 can be moved up and down with respect to the substrate 10 supported by the spin chuck 13.

Next, the cleaning process by the component cleaning apparatus 1 having the above-described configuration will be described.
In the cleaning process in the present embodiment, first, the substrate 10 as an object to be cleaned is set on the spin chuck 13 of the cleaning stage 2 in a state where the cleaning nozzle 3 is located at a standby position that is removed from the cleaning stage 2. Next, the control unit 9 starts execution of the cleaning program (batch processing). When the execution of the cleaning program is started, the cleaning nozzle 3 is moved above the substrate 10 by the operation of the nozzle moving mechanism 4, and subsequently, the substrate 10 held by the spin chuck 13 by the operation of the drive motor 11 is rotated. Rotate around 12.

  When the rotation speed of the substrate 10 becomes constant (for example, several thousand rpm), the cleaning nozzle 3 is then moved from the standby position to above the substrate 10 in the cleaning stage 2 by the nozzle moving mechanism 4 and moved out of the center of the substrate 10. Reciprocating scan while drawing an arc over the periphery. At the same time, supply of pure water from the cleaning liquid supply line 5 and nitrogen from the gas supply line 6 to the cleaning nozzle 3 is started. Inside the cleaning nozzle 3, pure water and nitrogen collide and mix to form droplets of pure water, and these droplets are discharged toward the substrate 10 from the discharge opening 3a. Further, a control signal is output from the control unit 9 to the liquid flow rate regulator 7 and the gas flow rate regulator 8 to adjust the flow rates of pure water and nitrogen.

  By the way, the particles adhering to the surface of the substrate 10 vary in size. Therefore, even if cleaning is performed with the pure water and nitrogen flow rates fixed, it is difficult to remove all particles without leaving them. For example, as shown in FIG. 2, when extremely small particles 26 a enter the trench groove 25 having a width of several μm formed on the substrate 10, a droplet larger than the width of the trench groove 25 is Since it is difficult to enter the groove and it is difficult to directly collide with the particle 26a, the particle 26a may not be removed. In this regard, the removal effect on the minute particles 26a can be enhanced by increasing the addition ratio of nitrogen to pure water to make the droplets finer. However, on the other hand, when there are relatively large particles 26b of about several tens μm to several mm, it is difficult to remove the particles 26b even if cleaning is performed with droplets smaller than this.

  Therefore, the component cleaning apparatus 1 performs the first cleaning in which nitrogen is added to the cleaning liquid at a predetermined ratio by periodically varying at least one of the flow rate of pure water or the flow rate of nitrogen supplied to the cleaning nozzle 3. The above problem is solved by performing the cleaning while alternately converting the state and the second cleaning state in which the ratio of nitrogen added to the cleaning liquid is lower than the first cleaning state. Hereinafter, this point will be described.

  FIG. 3A shows a part of the time transition of the flow rate of nitrogen in the present embodiment, and FIG. 3B shows a part of the time transition of the flow rate of pure water. In the present embodiment, the control means (that is, the control unit 9, the liquid flow rate adjuster 7, and the gas flow rate adjuster 8) is configured so that the fluctuation cycle of the pure water flow rate and the fluctuation cycle of the nitrogen flow rate are opposite to each other. Each flow rate is changed with a period T. Specifically, as shown in FIG. 3 (a), the control means sets the nitrogen flow rate to a maximum value (Nmax) at time T / 4 and a minimum value (Nmin) at time 3T / 4. While varying with the period T in the range of ˜100 l / min, as shown in FIG. 3 (b), the pure water flow rate is the minimum value (Wmin) at the time point T / 4, and the maximum value (Wmax) at the time point 3T / 4. In order to satisfy the above, the period T is varied in the range of 80 to 1000 ml / min. In other words, each flow rate is changed so that the pure water flow rate becomes minimum at the timing when the nitrogen flow rate becomes maximum and the pure water flow rate becomes maximum at the timing when the nitrogen flow rate becomes minimum.

  By controlling the flow rate of nitrogen and pure water in this way, in the period T1, the flow rate of nitrogen is high with respect to the flow rate of pure water, that is, the first cleaning state in which nitrogen is added to pure water at a predetermined ratio. As shown in FIG. 4A, droplets D having a smaller particle diameter are ejected from the cleaning nozzle 3. At time T / 4, the nitrogen flow rate reaches a maximum value and the pure water flow rate reaches a minimum value, thereby minimizing the particle size of the droplet D. In the first cleaning state, the removal of minute particles can be promoted by discharging the minute droplets D from the cleaning nozzle 3. In particular, even when the particle 26b exists in the trench groove 25 formed in the substrate 10, the droplet D can enter the trench groove 25, and the droplet D directly collides with the particle 26b in the groove. It becomes possible. As a result, the effect of removing the particles 26b can be enhanced.

  On the other hand, in the period T2, the nitrogen flow rate with respect to the pure water flow rate is low, that is, the second cleaning state in which the ratio of the secondary elements added to the cleaning liquid is lower than the first cleaning state. Drops larger droplets. At time 3T / 4, the flow rate of nitrogen reaches a minimum value, while the flow rate of pure water reaches a maximum value. As shown in FIG. It becomes a flow F and is jetted onto the surface of the substrate 10. That is, a so-called high-pressure jet cleaning state is set. In this second cleaning state, the kinetic energy of the droplets increases as the particle size increases, so that the removal of the particles 26b existing on the substrate surface other than the trench grooves 25 can be promoted. In addition, the control part 9 in this embodiment controls the pressure of a pure water by controlling the pressure control valve (not shown) provided in the middle of the washing | cleaning liquid supply line 5 in synchronization with the fluctuation | variation of the pure water flow volume, for example. It adjusts in the range of 0.1-5.0 MPa. Specifically, the pressure of pure water is increased with an increase in the flow rate of pure water in the second cleaning state. Thereby, since pure water is injected at a higher pressure, the cleaning effect in the second cleaning state can be further improved.

  In the cleaning step, the cleaning effect by adding more nitrogen as an additional element to the pure water by performing the cleaning while alternately converting the first cleaning state and the second cleaning state, that is, The cleaning effect by jetting finer droplets and the cleaning effect by jetting pure water in a state where the amount of nitrogen added is suppressed, that is, jetting larger droplets (pure pure water as it is) The cleaning effect different from the cleaning effect by spraying in a state can be obtained in one cleaning process. This makes it possible to remove particles on the substrate efficiently and more reliably regardless of the size of the particles.

  FIG. 5 is a schematic diagram illustrating a configuration of the component cleaning device 1 according to the second embodiment. The component cleaning apparatus 1 according to the present embodiment includes a vibrator 29 and an oscillator 30 as high-frequency vibration sources instead of the gas supply line 6 according to the first embodiment. The point which gives a high frequency vibration to pure water in the washing nozzle 3 by vibrating the vibrator | oscillator 29 arrange | positioned inside differs from the said 1st Embodiment. The control unit 9 in the second embodiment adjusts the current value of the oscillator 30 in the range of, for example, 0 to 1A, thereby changing the output of the high frequency vibration. Then, the control means (that is, the control unit 9, the liquid flow rate regulator 7, and the oscillator 30) controls the pure water so that the fluctuation cycle of the pure water flow rate and the fluctuation cycle of the current value of the oscillator 30 are in opposite phases. The flow rate and the current value are changed with the period T. Specifically, as shown in FIG. 6A, the control means sets the current value of the oscillator 30 to a maximum value (Nmax) at time T / 4 and a minimum value (Nmin) at time 3T / 4. On the other hand, as shown in FIG. 6B, the pure water flow rate is changed to a minimum value (Wmin) at a time point T / 4 and a maximum value (Wmax) at a time point 3T / 4. Vary with. That is, each flow rate is changed so that the pure water flow rate is minimized at the timing when the output of the high frequency vibration is maximized, and the pure water flow rate is maximized at the timing when the output of the high frequency vibration is minimized.

  Thereby, in period T1, it becomes the 1st cleaning state where the output (addition amount) of the high frequency vibration applied to pure water becomes high, and in this 1st cleaning state, exfoliation of particles is mainly promoted by the impact of the high frequency. it can. On the other hand, in period T2, the output (addition amount) of high-frequency vibration with respect to the flow rate of pure water is in the second cleaning state, which is lower than in the first cleaning state, and in this second cleaning state, pure water is mainly kept as it is. By spraying, it is possible to promote the removal of particles that have been separated in the first cleaning state. Also in this embodiment, the control unit 9 adjusts the pressure of pure water by controlling the pressure control valve in synchronization with the fluctuation of the pure water flow rate, and the pure water has a higher pressure in the second cleaning state. Is to be injected. Thereby, the particle removal effect can be further improved.

  Also in this embodiment, by performing cleaning while alternately converting the first cleaning state and the second cleaning state, a cleaning effect by increasing the output of high-frequency vibration as an additional element, that is, for particles Cleaning effect by applying high-frequency impact more strongly, cleaning effect by injecting pure water while suppressing the output of high-frequency vibrations, that is, cleaning effect by injecting pure water to high pressure in a close state These different cleaning effects can be obtained in a single cleaning step. This makes it possible to remove particles on the substrate efficiently and more reliably.

  By the way, the present invention is not limited to the above embodiment, and various modifications can be made based on the description of the scope of claims.

In each said embodiment, although the example which uses a pure water as a washing | cleaning liquid was shown, it is not restricted to this. For example, other cleaning liquids such as electrolytic ion water and hydrogen peroxide water can be used.
In the first embodiment, nitrogen is exemplified as an inert gas to be added (mixed) with pure water. However, the present invention is not limited to this, and other gases such as air can be used.

  Further, in each of the above embodiments, an example in which each parameter is changed so that the fluctuation cycle of the pure water flow rate and the fluctuation cycle of the additional amount of the secondary element (nitrogen flow rate or high frequency vibration) are in opposite phases to each other. Although shown, it is not limited to this. For example, the additional amount of the secondary element may be changed while the flow rate of the cleaning liquid is constant. Alternatively, the flow rate of the cleaning liquid can be changed in a state where the added amount of the secondary element is constant.

  Furthermore, the rotational speed of the substrate 10 may be varied in the period T in addition to the fluctuation of the pure water flow rate and the fluctuation of the added amount of the secondary element. Similarly, the distance of the cleaning nozzle 3 with respect to the substrate 10 can be changed with the period T. According to these configurations, the cleaning state (impact force when the droplet collides with the particle, centrifugal force acting on the particle, etc.) fluctuates more complicatedly. A wide range of cleaning effects can be expected.

It is a schematic diagram explaining the structure of a components washing | cleaning apparatus. It is an enlarged view of a cleaning head and a substrate. (A) is a graph which shows the time transition of the flow volume of nitrogen, (b) is a graph which shows the time transition of the flow volume of pure water. (A) is a figure explaining the washing | cleaning in a 1st washing | cleaning state, (b) is a figure explaining the washing | cleaning in a 2nd washing | cleaning state. It is a schematic diagram explaining the structure of the components washing | cleaning apparatus in 2nd Embodiment. (A) is a graph which shows the time transition of the electric current value of an oscillator, (b) is a graph which shows the time transition of the flow volume of a pure water.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Parts washing apparatus, 1 ... Cleaning stage, 3 ... Cleaning nozzle, 4 ... Nozzle movement mechanism, 5 ... Cleaning liquid supply line, 6 ... Gas supply line, 7 ... Liquid flow rate regulator, 8 ... Gas flow rate regulator, 9 ... Control part, 10 ... Semiconductor substrate, 11 ... Drive motor, 12 ... Rotating shaft, 13 ... Spin chuck, 15 ... Support arm, 16 ... Rotating shaft, 17 ... Rotating motor, 18 ... Rotating mechanism, 19 ... Lifting mechanism, 20 ... Lift cylinder, 21 ... support rod, 22 ... bracket, 25 ... trench groove, 26 ... particle, 29 ... vibrator, 30 ... oscillator

Claims (8)

A cleaning nozzle for injecting cleaning liquid, a cleaning liquid supply means for supplying the cleaning liquid to the cleaning nozzle, a secondary element adding means for adding a secondary element that can be mixed or transmitted to the cleaning liquid to the cleaning liquid, and a cleaning liquid by the cleaning liquid supply means Control means for controlling the flow rate of the secondary element and the amount of secondary element added by the secondary element addition means,
A component cleaning device for cleaning the object to be cleaned by spraying the cleaning liquid to which the secondary element is added from the cleaning nozzle toward the object to be cleaned,
In the cleaning process, the control means periodically changes at least one of the flow rate of the cleaning liquid or the additional amount of the secondary element, thereby causing the first cleaning state in which the secondary element is added to the cleaning liquid at a predetermined ratio. A component cleaning apparatus that alternately converts a second cleaning state in which a ratio of secondary elements added to the cleaning liquid is lower than the first cleaning state.   The control means varies the flow rate of the cleaning liquid and the additional amount of the secondary element in a predetermined cycle so that the fluctuation cycle of the flow rate of the cleaning liquid and the fluctuation cycle of the additional amount of the secondary element are in opposite phases to each other. The component cleaning apparatus according to claim 1.   2. The component cleaning apparatus according to claim 1, wherein the control unit varies the additional amount of the secondary element at a predetermined period in a state where the flow rate of the cleaning liquid is constant.   2. The component cleaning apparatus according to claim 1, wherein the control unit varies the flow rate of the cleaning liquid in a predetermined cycle while the additional amount of the secondary element is constant.   The component cleaning apparatus according to claim 1, wherein the pressure of the cleaning liquid is changed in synchronization with the change in the flow rate of the cleaning liquid. The secondary element adding means adds an inert gas as the secondary element to the cleaning liquid,
The said control means controls the addition amount of the inert gas as a secondary element by increasing / decreasing the flow volume of the inert gas by the said secondary element addition means. The component cleaning apparatus according to any one of the above. The secondary element adding means has a high frequency vibration source, and operates the high frequency vibration source to add high frequency vibration to the cleaning liquid as the secondary element.
The said control means controls the addition amount of the high frequency vibration as a secondary element by increasing / decreasing the electric current value of the high frequency vibration source of the said secondary element addition means. The component cleaning apparatus according to any one of the above. A cleaning step of cleaning the object to be cleaned by adding a secondary element that can be mixed or transmitted to the cleaning liquid to the cleaning liquid and spraying the cleaning liquid to which the secondary element is added from the cleaning nozzle toward the object to be cleaned. A part cleaning method for performing
In the cleaning step, a first cleaning state in which secondary elements added to the cleaning liquid are added at a predetermined rate by periodically changing at least one of the flow rate of the cleaning liquid or the additional amount of the secondary elements; A component cleaning method, wherein the second cleaning state in which the ratio of secondary elements added to the cleaning liquid is lower than the first cleaning state is alternately converted.

Images