Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10B—ELECTRONIC MEMORY DEVICES
  • H10B20/00—Read-only memory [ROM] devices
  • H10B20/27—ROM only
  • H10B20/40—ROM only having the source region and drain region on different levels, e.g. vertical channel
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
  • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
  • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
  • H01L29/76—Unipolar devices, e.g. field effect transistors
  • H01L29/772—Field effect transistors
  • H01L29/78—Field effect transistors with field effect produced by an insulated gate
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10B—ELECTRONIC MEMORY DEVICES
  • H10B20/00—Read-only memory [ROM] devices

Definitions

• the present invention relates to a memory cell arrangement with a multiplicity of memory cells provided in a semiconductor substrate with bit line trenches running parallel in the longitudinal direction in the main surface of the semiconductor substrate, in the bottoms of which a first conductive region is provided, in the crowns of which a second conductive region of the same conductivity type as each the first conductive region is provided and in the walls of which an intermediate channel region is provided, and with word lines running in the transverse direction along the main surface of the semiconductor substrate through certain bit line trenches for driving transistors provided there.
• DE 195 10 042 discloses a read-only memory cell arrangement in which the memory cells are arranged in rows running in parallel, longitudinal trenches being provided which run essentially parallel to the rows.
• the Rows are alternately arranged on the main surface between adjacent longitudinal trenches and on the bottom of the longitudinal trenches.
• Isolation structures are provided for mutual isolation of the memory cells, each of which comprises a MOS transistor.
• Word lines run across the rows and are each connected to the gates of MOS transistors arranged in different rows.
• the minimum space requirement per memory cell is theoretically 2 F 2 , where F is the minimum structure size of the technology.
• a read-only memory cell arrangement which has first memory cells with a vertical MOS transistor and second memory cells without a vertical MOS transistor.
• the memory cells are arranged along opposite flanks of strip-shaped, parallel insulation trenches. If the width and spacing of the isolation trenches are chosen to be the same size, the minimum space requirement per memory cell is theoretically 2F 2 , where F is the minimum structure size of the technology.
• the problem underlying the present invention is that in such cell arrangements with line areas that run parallel to the longitudinal trenches alternately on the trench crowns and the trench bottoms, the word lines running at a certain distance from one another perpendicular to it, the silicon on the trench walls between the word lines does not is covered by gate electrodes. If charges are present in the insulation oxides, spacer oxides or other layers that are deposited in the further manufacturing process before, a channel can form there, which leads to unacceptable leakage currents between the conductive areas on the trench crowns and trench bottoms.
• the object on which the present invention is based is therefore generally to specify a storage line arrangement which can be produced simply and reliably and a corresponding production method, these leakage currents being able to be significantly reduced without a great deal of process expenditure.
• this object is achieved by the memory cell arrangement specified in claim 1 and the production method specified in claim 5.
• the memory cell arrangement according to the invention has the advantage over the known memory cell arrangements that the leakage currents on the relevant trench walls can be significantly reduced without the process being significantly more complex.
• the vertical components are essentially protected by the word lines which have already been applied if it is ensured that the direction of implantation lies in a plane which passes essentially perpendicularly through the center of the word lines.
• the direction of implantation should be chosen such that there is essentially no dopant under the word lines in the vertical components already manufactured, i.e. Transistors.
• sensitive peripheral or planar components should be protected if necessary.
• two implantations are carried out to introduce the additional dopant, which are inclined in opposite directions to the vertical to the main surface of the semiconductor substrate.
• the implantation is carried out in a self-adjusting manner with respect to the word lines already present. This has the advantage that masking of the word lines can be dispensed with and the additional outlay is therefore very low.
• the implantation takes place in a separate photo plane.
• This own photo plane should at least protect peripheral and / or planar components on which the additional implantations could have negative effects.
• FIG. 1 shows a plan view of a cell array according to an embodiment of the memory cell arrangement according to the invention
• FIG. 2 is a vertical cross-sectional view of the cell array along line AA 'of FIG. 1; and 3 is a vertical cross-sectional view of the cell array along line BB 'of FIG. 1.
• FIG. 1 is a top view of a cell array in accordance with an embodiment of the memory cell arrangement according to the invention.
• la-ld bit line trenches, 2a-2c word lines, 3a-3c denote exposed tires between word lines 2a to 2c, 10 a semiconductor substrate, S a memory cell and F the minimum structure width.
• bit line trenches la-ld run parallel to one another, in the bottoms of which a lower bit line (15a-15d in FIGS. 2 and 3) is provided.
• An upper bit line (20a-20d in FIGS. 2 and 3) is provided in the crowns of the bit line trenches la-ld, and a channel region is provided in the walls of the bit line trenches la-ld, namely that between the lower bit lines and the upper ones Bit lines lying respective area.
• word lines 2a-2c which are isolated at least downwards, for driving the corresponding transistors of the memory cells, the structure of which is explained in more detail in connection with FIG. 2.
• FIG. 2 is a vertical cross-sectional view of the cell array along line A-A 'of FIG. 1.
• 10 designates a semiconductor substrate, 15a-15d the lower bit lines, 20a-20e the upper bit lines, 55 the upper insulation of the upper bit lines 20a-20e with respect to the word lines 2a-2c, 22 a gate oxide and 16 an insulating trench filling material .
• the memory cells are each arranged on opposite walls of the bit line trenches la-ld.
• the memory cells include first memory cells (e.g. in the bit line trenches la, lc, ld) in which a first logic value is stored and which have at least one vertical transistor.
• This vertical transistor is realized in that the word line extends into the trench over the corresponding channel region as a gate contact.
• the gate oxide layer 22 is provided between the respective gate contacts and the channel regions.
• the memory cells comprise second memory cells (e.g. in the bit line trench 1b), in which a second logic value is stored and which have no vertical transistor.
• FIG. 3 is a vertical cross-sectional view of the cell array along line B-B 'of FIG. 1.
• the strips between the word lines 2a-2c have a silicon region which is not covered by gates and which between undesired leakage currents the trench crowns and the trench bottoms is at risk, namely, for example, charges in an oxide to be subsequently deposited thereon.
• a dopant corresponding to the well doping in the cell field e.g. In the case of a p-well, boron was additionally introduced over a large area into the trench walls of the bit line trenches la-ld, which lie between the word lines 2a-2c, in order to obtain the corresponding one there
• implanting II, 12 of the additional dopant into the trench walls which run between the word lines the direction of implantation being in a plane perpendicular to the word lines and inclined as far as possible from the vertical in order to project the area dose high the vertical trench walls without too much shading through the web edges.
• two implantations II, 12 are carried out for introducing the additional dopant, which are inclined in opposite directions to the vertical to the main surface of the semiconductor substrate 10, so that both trench walls are reached.
• the implantation is carried out in a self-adjusting manner with respect to the word lines 2a-2c. In order to prevent the dopant from leaking into the adjacent channels, this step should be carried out after the gate stack has been annealed.
• the implantation can also take place in a separate photo plane in which at least planar and / or peripheral components are protected against the implantations.
• the additional dopant can in principle also be introduced in an oven process.

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• Engineering & Computer Science (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Power Engineering (AREA)
• Physics & Mathematics (AREA)
• Ceramic Engineering (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• General Physics & Mathematics (AREA)
• Computer Hardware Design (AREA)
• Semiconductor Memories (AREA)

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• 1998
  • 1998-02-25 DE DE19807920A patent/DE19807920A1/de not_active Withdrawn
• 1999
  • 1999-02-25 KR KR1020007009376A patent/KR100604180B1/ko not_active IP Right Cessation
  • 1999-02-25 JP JP2000533875A patent/JP2002505516A/ja active Pending
  • 1999-02-25 EP EP99916757A patent/EP1060474A2/de not_active Ceased
  • 1999-02-25 WO PCT/DE1999/000517 patent/WO1999044204A2/de active IP Right Grant
• 2000
  • 2000-08-25 US US09/645,763 patent/US6472696B1/en not_active Expired - Fee Related

Non-Patent Citations (1)

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