EP1036849A2 - Matériau composite à matrice métallique, son procédé de préparation et son utilisation - Google Patents

Matériau composite à matrice métallique, son procédé de préparation et son utilisation Download PDF

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Publication number
EP1036849A2
EP1036849A2 EP00104647A EP00104647A EP1036849A2 EP 1036849 A2 EP1036849 A2 EP 1036849A2 EP 00104647 A EP00104647 A EP 00104647A EP 00104647 A EP00104647 A EP 00104647A EP 1036849 A2 EP1036849 A2 EP 1036849A2
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European Patent Office
Prior art keywords
heat
semiconductor device
composite material
radiating board
board
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP00104647A
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German (de)
English (en)
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EP1036849B1 (fr
EP1036849A3 (fr
Inventor
Kazutaka c/o Hitachi Ltd. Okamoto
Yasuo c/o Hitachi Ltd. Kondo
Teruyoshi c/o Hitachi Ltd. Abe
Yasuhisa c/o Hitachi Ltd. Aono
Junya c/o Hitachi Ltd. Kaneda
Ryuichi c/o Hitachi Ltd. Saito
Yoshihiko c/o Hitachi Ltd. Koike
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Hitachi Ltd
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Hitachi Ltd
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Publication of EP1036849A3 publication Critical patent/EP1036849A3/fr
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Publication of EP1036849B1 publication Critical patent/EP1036849B1/fr
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    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/10—Alloys containing non-metals
    • C22C1/1036—Alloys containing non-metals starting from a melt
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    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
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    • C22C32/00—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
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Definitions

  • the invention relates to a new composite material and, more particularly, to a copper composite material of low thermal expansion and high thermal conductivity, and various kinds of uses such as semiconductor equipments in which this composite material is used.
  • power electronics Techniques related to the conversion and control of electric power and energy by means of electronic devices and, in particular, power electronic devices used in an on-off mode and power conversion systems as applied techniques of these power electronic devices are called power electronics.
  • Power semiconductor devices with various kinds of on-off functions are used for power conversion.
  • semiconductor devices there are put to practical use not only rectifier diodes which contain pn junctions and which have conductivity only in one direction, but also thyristors, bipolar transistors, MOS FETs (metal oxide semiconductor field effect transistors) etc., which differ from each other in various combinations of pn junctions.
  • thyristors bipolar transistors
  • MOS FETs metal oxide semiconductor field effect transistors
  • IGBTs gate turn-off thyristors
  • ICs integrated circuits formed by integrating electronic circuits on one semiconductor chip are classified according to their functions into memories, logic circuits, microprocessors, etc. They are called electronic semiconductor devices in contrast with power semiconductor devices. The integration degree and operating speed of these semiconductor devices have been increasing year by year, and the amount of generated heat has also been increasing accordingly.
  • an electronic semiconductor device is generally housed in a package in order to prevent troubles and deterioration by shutting it off from the surrounding atmosphere. Most of such packages are either a ceramic package or a plastic package, in ceramic packages, a semiconductor device is die-bonded to a ceramic substrate and sealed, and in plastic packages a semiconductor device is encapsulated with resins. In order to meet requirements for higher reliability and higher speeds, multi-chip modules (MCMs) in which multiple semiconductor devices are mounted on one substrate are also manufactured.
  • MCMs multi-chip modules
  • a lead frame and terminals of a semiconductor device are connected by means of a bonding wire and encapsulated with plastics.
  • a package in which the lead frame has heat-dissipating property and another package in which a heat-radiating board for heat dissipation is mounted have also been considered.
  • copper-based lead frames and heat-radiating boards of high thermal conductivity are frequently used for heat dissipation, there is the risk that problems may occur due to a thermal expansion different from that of Si.
  • a semiconductor device is mounted on a ceramic substrate on which wiring portions are printed, and the semiconductor device is sealed with a metal or ceramic cap.
  • a composite material of Cu-Mo or CU-W or a Kovar alloy is bonded to the ceramic substrate and used as a heat-radiating board, and for each of these materials there is required an improvement in workability and a low cost as well as lower thermal expansion design and higher thermal conductivity design.
  • MCM multi-chip module
  • multiple semiconductor devices are mounted as bare chips on the thin-film wiring formed on an Si or a metal or a ceramic substrate, are housed in a ceramic package, and are encapsulated with a lid.
  • a heat-radiating board and a heat-radiating fin are installed in the package.
  • Copper and aluminum are used as the material for metal substrates. Although copper and aluminum have the advantage of a high thermal conductivity, these metals have a large coefficient of thermal expansion and have inferior compatibility with semiconductor devices. For this reason, Si and aluminum nitride (AlN) are used as substrates for high-reliability MCMs. Further, because the heat-radiating board is bonded to the ceramic package, a material having good compatibility with the package material in terms of thermal expansion coefficient and having a large thermal conductivity is desired.
  • the materials for semiconductor devices presently in use are mainly Si (silicon) and GaAs (gallium arsenide).
  • the coefficients of thermal expansion of these two materials are 2.6 x 10 -6 /°C to 3.6 x 10 -6 /°C and 5.7 x 10 -6 /°C to 6.9 x 10 -6 /°C, respectively.
  • As materials for heat-radiating boards having a thermal expansion coefficient close to these values AlN, SiC, Mo, W, Cu-W, etc., have been known.
  • Al-SiC has been proposed as a material for heat radiating boards.
  • This is a composite material of Al and SiC, and the coefficients of heat transfer (or expansion) and thermal conductivity can be controlled in a wide range by changing the proportions of the two components.
  • this material has the disadvantage of very inferior workability and high cost.
  • a Cu-Mo sintered alloy is proposed in JP-A-8-78578, a Cu-W-Ni sintered alloy being proposed in JP-A-9-181220, a Cu-SiC sintered alloy being proposed in JP-A-9-209058, and an Al-SiC is proposed in JP-A-9-15773.
  • the underlying problem of the invention is to provide a composite material excellent in plastic workability, a method of manufacturing the composite material, and semi-conductor equipments in which the composite material is used, heat-radiating boards of semiconductor equipments, electrostatic fixation or adsorption devices, and dielectric boards of electrostatic adsorption devices.
  • a composite material manufactured through the steps of melting a metal of high thermal conductivity, preferably Cu, and an inorganic compound of lower thermal expansion than Cu, preferably Cu 2 O, and dispersing these materials.
  • a composite material comprising a metal and an inorganic compound preferably having a smaller coefficient of thermal expansion than the metal, most of the compound being granular grains with a grain size of preferably not more than 50 ⁇ m and dendrites.
  • the compound comprises dendrites each having a bar-like stem and branches of a granular shape.
  • a composite material comprising a metal and an inorganic compound, most of the compound are granular grains with a grain size of 5 to 50 ⁇ m and dendrites, and 1 to 10% of the whole compound are fine grains with a grain size of not more than 1 ⁇ m.
  • a composite material comprising a metal and an inorganic compound, the coefficient of thermal expansion or thermal conductivity being larger in a solidification direction than in a direction vertical to the solidification direction.
  • the composite material of the invention may be one comprising copper and copper oxide.
  • a composite material comprising a metal and an inorganic compound having a shape of bar with a diameter of 5 to 30 ⁇ m, and preferably, not less than 90% of the whole of the inorganic compound in terms of the area percentage of section is in the shape of a bar with a diameter of 5 to 30 ⁇ m.
  • the composite material of the invention may comprise copper and copper oxide and may be plastically worked.
  • a composite material comprising copper, copper oxide and incidental impurities, the content of the copper oxide being 10 to 55 % by volume, copper oxide being made to be dendrites, the coefficient of linear expansion in a temperature range from room temperature to 300°C being 5 ⁇ 10 -6 /°C to 17 ⁇ 10 -6 /°C, and the thermal conductivity thereof at room temperature is 100 to 380 W/m ⁇ K.
  • This composite material has anisotropy.
  • a composite material comprising copper, copper oxide, preferably cuprous oxide (Cu 2 O) and incidental impurities, the content of copper oxide being preferably 10 to 55 % by volume, the copper oxide being provided with the shape of bars each oriented in one direction, the coefficient of linear expansion of the copper oxide in a temperature range from room temperature to 300°C is 5 ⁇ 10 -6 /°C to 17 ⁇ 10 -6 /°C, and the thermal conductivity thereof at room temperature is 100 to 380 W/m ⁇ K.
  • the thermal conductivity in the oriented direction is higher than that in the direction at right angles to the oriented direction, and the difference between the two is preferably 5 to 100 W/m ⁇ K.
  • a manufacturing method in which a metal and an inorganic compound forming a eutectic structure with this metal are melted and solidified and, in particular, a manufacturing method of a composite material comprising copper and copper oxide.
  • This manufacturing method preferably comprises the step of preparing a raw material of copper or copper and copper oxide, melting the raw material in an atmosphere having a partial pressure of oxygen of 10 -2 Pa to 10 3 Pa followed by casting, performing heat treatment thereof at 800°C to 1050°C, and preferably performing cold or hot plastic working thereof.
  • a heat-radiating board for semiconductor equipment which board is made of the above composite material.
  • the heat-radiating board for the semiconductor equipment may have a nickel plating layer on its surface.
  • a semiconductor equipment comprising an insulating substrate mounted on a heat-radiating board, and a semiconductor device mounted on the insulating substrate, said heat-radiating board being the same as recited in the ninth aspect of the invention.
  • a semiconductor equipment comprising a semiconductor device mounted on a heat-radiating board, a lead frame bonded to the heat-radiating board, and a metal wire for electrically connecting the lead frame to the semiconductor device, the semiconductor device being resin-encapsulated, and the heat-radiating board being the same as recited in the ninth aspect of the invention.
  • a semiconductor equipment which comprises a semiconductor device mounted on a heat-radiating board, a lead frame bonded to the heat-radiating board, and a metal wire for electrically connecting the lead frame to the semiconductor device, the semiconductor device being resin-encapsulated, at least the face of the heat-radiating board which face is opposed to the connection face of the semiconductor device is opened, and the heat-radiating board being the same as recited in the ninth aspect of the invention.
  • a semiconductor equipment comprising a semiconductor device mounted on a heat-radiating board, a ceramic multilayer substrate provided with a pin for connecting external wiring and an open space for housing the semiconductor device in the middle thereof, and a metal wire for electrically connecting the semiconductor device to a terminal of the substrate, and both of the heat-radiating board and the substrate being bonded to each other so that the semiconductor device is installed in the open space, the substrate being bonded to a lid so that the semiconductor device is isolated from an ambient atmosphere, and the heat-radiating board being the same as recited in the ninth aspect of the invention.
  • a semiconductor equipment comprising a semiconductor device mounted on a heat-radiating board, a ceramic multilayer substrate having a terminal for connecting external wiring and a concave portion for housing the semiconductor device in the middle of the substrate, and a metal wire for electrically connecting the semiconductor device to the terminal of the substrate, both of the heat-radiating board and the substrate being bonded to each other so that the semiconductor device is installed in the concave portion of the substrate, the substrate being bonded to a lid so that the semiconductor device is isolated from an ambient atmosphere, and the heat-radiating board is the same as recited in the ninth aspect of the invention.
  • a semiconductor equipment comprising a semiconductor device bonded to a heat-radiating board with a heat-conducting resin, a lead frame bonded to a ceramic insulating substrate, a TAB for electrically connecting the semiconductor device to the lead frame, both of the heat-radiating board and the insulating substrate being bonded to each other so that the semiconductor device is isolated from an ambient atmosphere, and an elastic body of heat-conducting resin interposed between the semiconductor device and the insulating substrate, the heat-radiating board being the same as recited in the ninth aspect of the invention.
  • a semiconductor equipment comprising a semiconductor device bonded onto a first heat-radiating board by use of a metal, a second heat-radiating board to which an earthing board is bonded, the first heat-radiating board being mounted on the earthing board, and a TAB electrically connected to a terminal of the semiconductor device, the semiconductor device being encapsulated by resin, the heat-radiating board being the same as recited in the ninth aspect of the invention.
  • a dielectric board for electrostatic fixation ('adsorption') devices which board is made of the composite material recited above.
  • an electrostatic fixation ('adsorption') device in which, by applying a voltage to an electrode layer, an electrostatic attractive force is generated between a dielectric board bonded to the electrode layer and a body to thereby fix the body to the surface of the dielectric board, the dielectric board being the same as the dielectric board recited in the seventeenth aspect of the invention.
  • Au, Ag, Cu and Al with high electrical conductivity are preferably used as metals and, particularly, Cu is the best because of its high melting point and high strength.
  • an inorganic compound of the composite material it is undesirable to use conventional compounds with hardness very different from that of the base metal, such as SiC and Al 2 O 3 , as mentioned above. It is desirable to use a compound having a granular shape, relatively low hardness and an average coefficient of linear expansion in a temperature range from room temperature to 300°C of not more than 10 ⁇ 10 -6 /°C and, more preferably, not more than 7 ⁇ 10 -6 /°C. Copper oxide, tin oxide, lead oxide and nickel oxide are available as such inorganic compounds. Particularly, copper oxide with good ductility is preferred because of its high plastic workability.
  • a method of manufacturing a composite material related to the invention comprises the steps of melting and casting a raw material comprising copper and copper oxide, performing heat treatment at 800°C to 1050°C, and performing cold or hot plastic working.
  • a method of manufacturing a composite material related to the invention comprises the steps of melting and casting a raw material comprising copper or copper and copper oxide under a partial pressure of oxygen of 10 -2 Pa to 10 3 Pa, performing heat treatment at 800°C to 1050°C, and performing cold or hot plastic working.
  • cuprous oxide (Cu 2 O) or cupric oxide (CuO) may be used as the starting material.
  • the partial pressure of oxygen during melting and casting is preferably 10 -2 Pa to 10 3 Pa and is more preferably 10 -1 Pa to 10 2 Pa. Further, by changing the mixture ratio of the starting materials, the partial pressure of oxygen, and the cooling rate during solidification, etc., it is possible to control the ratio of the Cu phase to the Cu 2 O phase and the size and shape of the Cu 2 O phase of the composite material.
  • the proportion of the Cu 2 O phase is preferably in the range of 10 to 55 vol.%.
  • the shape of the Cu 2 O phase the shape of a dendrite formed during solidification is preferred. This is because in the dendrite branches are intricate in a complicated manner, with the result that the expansion of the Cu phase having large thermal expansion is pinned by the Cu 2 O phase having small thermal expansion.
  • the branches of the dendrite formed during solidification can be controlled, by changing the blending ratio of the raw material or the partial pressure of oxygen, to have a Cu phase, to have a Cu 2 O phase, or to have a CuO phase.
  • a predetermined period of time is required until the reaction according to equation (1) reaches equilibrium. For example, when the heat treatment temperature is 900°C, about 3 hours are sufficient.
  • the size and shape of the fine Cu 2 O phase formed in the Cu phase by a eutectic reaction can be controlled by the heat treatment.
  • a unidirectional casting process in addition to ordinary casting, a unidirectional casting process, a thin-sheet continuous casting process and etc. may be used.
  • the ordinary casting dendrites are isotropically formed and, therefore, the composite material is made isotropic.
  • the unidirectional casting process the Cu phase and Cu 2 O phase are oriented in one direction and, therefore, anisotropy can be imparted to the composite material.
  • the thin-sheet continuous casting process dendrites become fine because of a high solidification rate and, therefore, dendrites are oriented in the sheet-thickness direction. For this reason, anisotropy can be imparted to the composite material of sheet and, at the same time, it is possible to reduce the manufacturing cost.
  • a composite material of the invention since the Cu phase and Cu 2 O phase constituting the composite material are low in hardness and have sufficient ductility, cold or hot working, such as rolling and forging, is possible and is performed as required after casting or heat treatment. By working the composite material, anisotropy occurs therein and besides its strength can be increased. Particularly when cold or hot working is performed, the Cu 2 O phase is elongated and oriented in the working direction and anisotropy in the thermal and mechanical properties occurs in the direction at right angles to the elongated direction. At this time, the thermal conductivity in the elongated and oriented direction is higher than the thermal conductivity at right angles to the oriented direction, and this difference becomes 5 to 100 W/m ⁇ K.
  • Composite materials were produced by casting a raw material obtained by mixing copper and Cu 2 O with a purity of 2N at the ratios shown in Table 1 after melting it under atmospheric pressure. The coefficient of linear expansion, thermal conductivity and hardness of these composite materials were measured. The coefficient of linear expansion was measured in the temperature range from room temperature to 300°C through the use of a standard sample of SiO 2 with the aid of a push rod type measuring device. Thermal conductivity was measured by the laser flash method. The results of these measurements are shown in Table 1. The microstructure (100X) of the obtained sample No. 3 is shown in Fig. 1. The field of view is 720 ⁇ 950 ⁇ m.
  • copper oxide is formed to have dendritic shapes and besides granular grains are observed mostly with grain sizes of 10 to 50 ⁇ m with the exception of one lumpy grain with a diameter of 100 ⁇ m.
  • the matrix contains granular grains each having a grain size not more than 0.2 ⁇ m each of which is spaced about 0.5 ⁇ m from each dendrite, that is, there are non-formation zones of 0.5 ⁇ m in width between the granular one and the dendritic one. Further, there are also granular ones of not more than 0.2 ⁇ m in grain size which lie in thread-like line.
  • the results of the hardness measurement reveal that the hardness of the Cu phase is Hv 75 to 80 and that the hardness of the Cu 2 O phase is Hv 210 to 230. As a result of an evaluation of machinability by lathing and drilling, it has become evident that the machinability is so excellent that it is easy to obtain any intended shape from the composite material.
  • Composite materials were produced by the unidirectional solidification process by casting a raw material obtained by mixing copper and Cu 2 O with a purity of 3N at the ratios shown in Table 2 after melting it under different partial pressures of oxygen.
  • some of the Cu 2 O phase become dendrites and besides granular grains are observed mostly with grain sizes of 5 to 50 ⁇ m.
  • the number of these ones is about 16.
  • One lumpy grain with a diameter of not less than 100 ⁇ m can be seen.
  • most of the Cu 2 O phase are granular ones not more than 0.2 ⁇ m in grain size and thread-like ones lying to form network.
  • the fine Cu 2 O grains in the matrix it is noted that there are nonformation zones similarly to the case of Fig. 1.
  • the Cu 2 O phase forms dendrites and the structure is oriented in one direction. It has become also apparent that the shape and density of the Cu 2 O phase can be controlled by changing the raw material and partial pressure of oxygen.
  • the number of these dendritic ones and bar-like ones is about 33, and the longest one has a length of about 200 ⁇ m.
  • the matrix contains granular grains each having a grain size not more than 0.2 ⁇ m, and there are nonformation zones between the granular grain, bar-like one, and dendritic one, and in this example these ones are formed densely all over the matrix, so that an area where the fine grains are formed becomes small.
  • Table 2 are shown the measurement results of the coefficient of linear expansion and thermal conductivity of the above two kinds of composite materials. From the results, it has been observed that in each of the composite materials, anisotropy occurs regarding the coefficient of linear expansion and thermal conductivity.
  • the longitudinal direction is the solidification direction of castings and the transverse direction is a direction vertical to the solidification direction.
  • the coefficient of linear expansion is slightly larger in the longitudinal direction than in the transverse direction when the Cu 2 O content becomes not less than 30 vol.%, and thermal conductivity becomes not less than 1.1 times larger in the longitudinal direction than in the transverse direction
  • Fig. 4 shows the microstructure (100X) of the sample No. 9 shown in Table 3.
  • the structure of this sample comes to have an aspect ratio in the range of from 1 to 20.
  • the diameter of bar-like one is not more than 20 ⁇ m and mostly 1 to 10 ⁇ m.
  • the number of CuO 2 having a bar-like shape of not less than 100 ⁇ m in length is about 15. Fine grains of not more than 0.2 ⁇ m in an as-cast state grew to grains of about 2 to 5 ⁇ m. Further, as shown in Table 3, in the sample No. 9, more remarkable anisotropy is observed regarding the coefficient of linear expansion and thermal conductivity. In particular, the thermal conductivity in the longitudinal direction along the bar-like ones is 1.22 times larger than the thermal conductivity in the transverse direction. The coefficient of linear expansion is slightly larger in the longitudinal direction than in the transverse direction.
  • Fig. 5 shows the microstructure (100X) of the sample No. 10 shown in Table 4, which was obtained by subjecting the above sample No. 9 to heat treatment at 900°C for 3 hours.
  • the Cu 2 O phase was elongated in the plastic working direction, and almost all grains were coarsened to have bar diameters of 5 to 30 ⁇ m while keeping their orientating property.
  • the number of bar-like ones of not less than 100 ⁇ m in length becomes about 50, and they lies with longer lengths than before the heat treatment. Further, fines grains grew to grains with a grain size of 2 to 5 ⁇ m, so that such fine grains disappeared.
  • anisotropy in the coefficient of linear expansion and thermal conductivity of this sample decreased in comparison with the sample No. 9, and thermal conductivity increased in each direction while compensating for this decrease in anisotropy. Therefore, the anisotropy in the coefficient of linear expansion and thermal conductivity was able to be controlled through the control of the structure by working or heat treatment after working.
  • the thermal conductivity in the longitudinal direction was 1.11 times larger than the conductivity in the transverse direction.
  • a copper composite material of the invention was applied to a heat-radiating board (base board) of an insulated gate bipolar transistor module (hereinafter abbreviated as an IGBT module), which is one of power semiconductor devices.
  • base board of an insulated gate bipolar transistor module
  • IGBT module insulated gate bipolar transistor module
  • Fig. 6 is a plan view of the interior of the module and Fig. 7 is a sectional view of a part of the module.
  • the IGBT elements of 1014 pieces and diode elements of 1022 pieces are bonded to an AlN substrate 103 by use of solder 201.
  • This AlN substrate 103 is formed by bonding copper foil 202 and 203 to an AlN board 204 by use of a silver brazing material not shown in the figure.
  • On the AlN substrate 103 are formed regions for an emitter 104, a collector 105 and a gate 106.
  • An IGBT element 101 and a diode element 102 are soldered to the region for the collector 105. Each element is connected to the emitter 104 by means of a metal wire 107.
  • a resistor element 108 is disposed in the region for the gate 106, and a gate pad of IGBT element 101 is connected to the resistor element 108 by means of the metal wire 107.
  • Six AlN substrates 103 on each of which a semiconductor device is mounted are bonded to a base material 109 comprising a Cu-Cu 2 O alloy relating to the invention by use of solder 205. Between insulating substrates, interconnect is performed by solder 209 which connects a terminal 206 of a case block 208, in which the terminal 206 and a resin case 207 are integrated, to the AlN substrate 103. Further, the case 207 and the base material 109 are bonded to each other with silicone-rubber-based adhesive 210.
  • main terminals are connected on each AlN substrate 103 to two points with respect to each of emitter terminal interconnect position 110, emitter sense terminal interconnect position 111 and collector terminal interconnect position 112, and are connected to one point with respect to gate terminal interconnect position 113.
  • a silicone gel 212 is poured from a case lid 211 provided with a resin pouring port so that the whole terminal surface is coated, and a thermosetting epoxy resin 213 is then poured over the whole surface, thereby completing the module.
  • the invention Cu 17 390 Conventional structure Mo 5 140 Al-SiC 8 16
  • Table 5 are shown the coefficient of thermal expansion and thermal conductivity of usually used base materials and those of Cu and 30 vol.% Cu 2 O, which is one of the Cu-Cu 2 O alloy materials of the invention obtained in Examples 1 to 5.
  • the coefficient of thermal expansion is small in comparison with usually used modules of Cu base and, therefore, the reliability of the solder 209 which bonds the AlN substrate 103 to the base material 109 can be improved.
  • the thermal conductivity is also small although the coefficient of thermal expansion is small in comparison with the semiconductor devices in which the base material of Cu-Cu 2 O is used, with the result that the problem of large thermal resistance of a module arises.
  • a module in which the base of Cu-Cu 2 O of this example is used it is possible to ensure that reliability (life in the thermal fatigue test) is not less than 5 times larger than that of a module in which a base of Cu is used and that thermal resistance is not more than 0.8 time less than that of a module in which a base of Mo is used when the thickness of the bases is the same.
  • an alumina substrate which has a thermal conductivity about 20% smaller than AlN, as the insulating substrate.
  • Alumina has a higher toughness than AlN, and the substrate size can be made larger.
  • the alumina substrate has a larger coefficient of thermal expansion than an AlN substrate and the difference in thermal expansion from the base material can be made smaller and, therefore, the amount of warp of the module itself can also be reduced. Because the use of an alumina substrate enables the allowable substrate size to be larger, the number of semiconductor devices capable of being loaded on one substrate can be increased. In other words, it is possible to reduce the area necessary for ensuring insulation for each insulating substrate and to reduce the area between substrates and, therefore, the module size can be smaller.
  • Figs. 8A to 8D are schematic drawings of the manufacturing process of a module of this example.
  • the base material 109 comprising Cu-Cu 2 O is made to have a substantially flat surfaces coated with Ni.
  • the AlN substrate 103 to which the IGBT element 101 (, which is a semiconductor device,) is soldered is bonded to the base material 109 by use of solder 205.
  • the coefficient of thermal expansion of the base material 109 is larger than that of a composite body 301 which comprises the semiconductor device and the AlN substrate, the back face of the module is warped in concave shape during the cooling of the solder.
  • Fig. 8A the base material 109 comprising Cu-Cu 2 O is made to have a substantially flat surfaces coated with Ni.
  • the AlN substrate 103 to which the IGBT element 101 (, which is a semiconductor device,) is soldered is bonded to the base material 109 by use of solder 205.
  • the coefficient of thermal expansion of the base material 109 is larger than that of a composite body
  • Fig. 9 shows the result of the measurement of the amount of the warp of the back face in each step.
  • the amount of warp can be decreased to about 1/3 that of a module in which the conventional base of Mo is used.
  • the difference in the coefficient of expansion from the AlN substrate is large, so that the back face of the module warps in concave shape with a large warp amount during the step of Fig. 8B, and the back face becomes concave with a warp of not less than 100 ⁇ m even after the completion of a module.
  • the amount of warp of the module can be reduced and, therefore, it is possible to make the size of the module larger. Moreover, similarly to the amount of warp in the assembling steps, the amount of change in warp due to temperature differences during the operation of the module is also small, so that the outflow of the grease applied between the module and the cooling fin can be prevented.
  • Fig. 10 shows an embodiment of a power conversion device to which a module of the invention is applied.
  • a module 501 was mounted on a heat sink 511 by means of locking bolts 512 with a heat-radiating grease 510 sandwiched between the module and the heat sink, whereby a two-level inverter was formed.
  • the modules 501 of a power semiconductor equipment are mounted in a laterally reverse relation to each other so that the midpoint (Point B) can be interconnected at one midpoint interconnect 503.
  • the u-, v- and w-phases are connected to each of the collector-side interconnect 502 and the emitter-side interconnect 504, and power is supplied thereto from a source 509.
  • a signal conductor is formed of a gate interconnect 505, an emitter auxiliary interconnect 506 and a collector auxiliary interconnect 507 of the module 501 of each IGBT.
  • Numeral 508 denotes a load.
  • Figs. 11A and 11B and Figs. 12A and 12B show the amounts of warp of the back face of the module (grease thickness) measured, respectively, before and after the tightening of the module when the module was mounted.
  • Figs. 11A and 12A show the module in which the Cu-Cu 2 O alloys of the invention shown in Examples 1 to 4 are used
  • Figs. 11A and 12B show the module of the conventional method.
  • the amount of convex warp of the back face is about 100 ⁇ m.
  • the module when the module is tightened while applying grease, the module is deformed during tightening by being pressed by the grease, so that the back face of the module is inversely deformed in concave shape with the grease thickness larger in the middle thereof, resulting in an increase in contact resistance.
  • the amount of initial warp of back face is about 50 ⁇ m.
  • the grease thickness in the middle of the module after grease application and tightening was suppressed to be about 50 ⁇ m, i.e., to be half the grease thickness in the conventional Al-SiC base. Further, it is also possible to reduce variations in the grease thickness within the module.
  • the Cu-Cu 2 alloy base of the invention can provide smaller thermal resistance and smaller contact thermal resistance than such base materials as Mo and Al-SiC applied to conventional high-reliability modules.
  • the module was able to be mounted in a closely packed condition as shown in Fig. 10.
  • the cooling efficiency of a cooling fin can be decreased, the mounting area and volume of a power conversion device can be reduced.
  • grease thickness can be reduced, the allowable range of flatness of a cooling fin can be set wide and, therefore, it is possible to assemble a power conversion device by use of a large fin.
  • the auxiliary cooling function such as forced cooling, etc. can be eliminated, and in this respect, small size design and low noise design can be also adopted.
  • a heat-radiating board made of each of the composite materials comprising a copper-copper oxide alloy of the invention described in Examples 1 to 4 was applied to the plastic packages in each of which an IC shown in Fig. 13 and 14 was mounted.
  • Fig. 13 shows a plastic package with a built-in heat-radiating board
  • Fig. 14 shows a plastic package with an exposed heat-radiating board.
  • the heat-radiating boards were fabricated by changing their chemical compositions in the range of Cu-20 to 55 wt.% Cu 2 O so that the coefficient of thermal expansion in a temperature range from room temperature to 300°C becomes 9 ⁇ 10 -6 /°C to 14 ⁇ 10 -6 /°C, while taking the coefficient of thermal expansion of molding resin into consideration, and they were used after machining and Ni plating treatment.
  • a lead frame 31 is bonded to an Ni-plated heat-radiating board 33 made of a copper composite material of the invention via an insulating polyimide tape 32.
  • An IC 34 is bonded to the heat-radiating board 33 by use of solder.
  • an Al electrode on the IC is connected to the lead frame by means of an Au wire 35.
  • a molding resin 36 whose main components are epoxy resin, silica filler and curing agent.
  • the package with an exposed heat-radiating board shown in Fig. 14 differs from the package shown in Fig. 13 in the respect that the heat-radiating board 33 is exposed outside the molding resin.
  • Figs. 15 and 16 show the cross sections of ceramic packages in which one of the copper composite materials of the invention described in Examples 1 to 4 is used as a heat-radiating board and in which an IC is mounted.
  • An IC 41 is bonded to an Ni-coated heat-radiating board 42 by use of a polyimide-base resin. Further, the heat-radiating board 42 is bonded to a package 43 of Al 2 O 3 with solder.
  • Cu interconnect is provided in the package, which is provided with a pin 44 for the connection with an interconnect substrate.
  • An Al electrode on the IC and the interconnect on the package are connected by means of an Al wire 45.
  • a weld ring 46 of kovar was bonded to the package by use of silver solder, and the weld ring and a lid 47 of kovar were welded together by means of a roller electrode.
  • Fig. 16 shows a package obtained by bonding a heat-radiating fin 48 to the ceramic package shown in Fig. 15.
  • Figs. 17 and 18 show packages in which TAB (tape automated bonding) technology is applied and each of the copper composite materials of the invention described in Examples 1 to 4 is used as the heat-radiating board.
  • TAB tape automated bonding
  • An IC 51 is bonded to a heat-radiating board 53 related to the invention via a heat-conducting resin 52.
  • Au bumps 54 are formed in terminals of the IC, which are connected to TAB 55, and the TAB is in turn connected to a lead frame 57 via a thin-film interconnect 56.
  • the IC is sealed by a ceramic substrate 59 of Al 2 O 3 , a frame 60 and a sealing glass 61 while interposing a silicone rubber 58.
  • Fig. 18 shows a resin-encapsulated package.
  • An IC 65 is bonded to an Ni-plated heat-radiating board 67 related to the invention by use of an Au-Si alloy 66 and is further bonded to both of a copper grounding board 69 and an Ni-plated heat-radiating board 70 of the invention by use of a heat-conducting resin 68.
  • the terminals of the IC are bonded to TAB 72 with Au bumps 71 and are encapsulated by use of a resin 73.
  • a part of a lead frame and heat-radiating board are exposed to the outside of the encapsulating resin.
  • the TAB is fixed to the copper grounding board by use of an epoxy-base Ag paste 74.
  • Fig. 19 shows an embodiment of MCM (multi-chip model) in which each of the copper composite materials of the invention described in Examples 1 to 4 is used as the heat-radiating board.
  • An IC 81 is connected by Au wire 82 to a thin-film interconnect 84 formed on an Ni-plated heat-radiating board 83 of the invention, the IC being further connected to an interconnect formed on a package 85 of AlN by the Au wire, and the IC is taken out as an external terminal 86.
  • the IC portion is sealed by a lid 87 of 42-alloy while interposing and bonding a preform 88 of Au-Sn alloy between the lid 87 and the W-metallized layer of the package.
  • Fig. 20 is a sectional view of an electrostatic fixation device in which a composite material of the invention is used.
  • this electrostatic fixation device can be used as a chuck for a sputtering device which performs the working of a workpiece 90 of a conductor or semiconductor under a reduced pressure in a vacuum treatment chamber 95.
  • a voltage about 500 V
  • the workpiece 90 can be fixed on the surface of a dielectric board 92.
  • the dielectric board used in this example was fabricated from each of the composite materials comprising a copper-copper oxide alloy described in Examples 1 to 4.
  • the vacuum treatment chamber 95 was evacuated until the internal pressure in the chamber became about 1 x 10 -3 Pa. After that, by opening a valve attached to a gas inlet 96, about 10 SCCM of reaction gas (argon gas, etc.) was introduced into the interior of the vacuum treatment chamber 95. The internal pressure in the vacuum treatment chamber 95 at this time was about 2 x 10 -2 Pa.
  • the electrode 94 of this electrostatic fixation device After that, by supplying high-frequency power (13.56 MHz) of about 4 kW from the electrode 94 of this electrostatic fixation device, a plasma was generated between the electrode 94 of this electrostatic fixation device and another electrode (not shown in the figure).
  • the applied high-frequency voltages V DC and V PP were 2 kV and 4 kV, respectively.
  • a matching box 98 disposed between the electrode 94 of this electrostatic fixation device and a high-frequency power unit 93 was used for ensuring impedance matching with the vacuum treatment chamber 95 so that high-frequency power was efficiently supplied to the plasma.
  • this electrostatic fixation device is useful for an improvement in the reliability of working.
  • this electrostatic adsorption device is used as a chuck for a working apparatus for applying working to a workpiece of a conductor or semiconductor (for example, a silicon substrate) in an atmosphere under a reduced pressure (which working apparatus is a so-called working apparatus under a reduced pressure, and includes, for example, a chemical vapor-phase deposition device, physical vapor deposition device, milling device, etching device and ion implantation device).
  • the heat resistance of the dielectric board of an electrostatic fixation device can be improved without a decrease in the dielectric breakdown strength of the dielectric board. Therefore, by using an electrostatic fixation device of the invention as a chuck for a device for performing working under a reduced pressure, the occurrence of foreign matters caused by cracks, etc. in the dielectric board can be reduced.
  • the composite materials of the present invention have excellent plastic workability and preferably comprise a Cu phase with high thermal conductivity and preferably a Cu 2 O phase with low thermal expansion. Because the coefficient of thermal expansion and thermal conductivity can be controlled by adjusting the contents of the Cu phase and Cu 2 O phase, the composite materials can be used in a wide range of applications as heat-radiating boards mounted in semiconductor equipments, etc.

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EP00104647A 1999-03-16 2000-03-03 Matériau composite à matrice métallique, son procédé de préparation et son utilisation Expired - Lifetime EP1036849B1 (fr)

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JP6954099 1999-03-16
JP06954099A JP3690171B2 (ja) 1999-03-16 1999-03-16 複合材料とその製造方法及び用途

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US7368657B2 (en) 2002-01-30 2008-05-06 Toyo Aluminium Kabushiki Kaisha Paste composition and solar cell employing the same

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JP3740117B2 (ja) * 2002-11-13 2006-02-01 三菱電機株式会社 電力用半導体装置
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JP5252819B2 (ja) * 2007-03-26 2013-07-31 三菱電機株式会社 半導体装置およびその製造方法
US8067834B2 (en) * 2007-08-21 2011-11-29 Hvvi Semiconductors, Inc. Semiconductor component
US8253233B2 (en) 2008-02-14 2012-08-28 Infineon Technologies Ag Module including a sintered joint bonding a semiconductor chip to a copper surface
JP4748173B2 (ja) * 2008-03-04 2011-08-17 株式会社デンソー 半導体モジュール及びその製造方法
MD249Z (ro) * 2009-04-29 2011-02-28 Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы Procedeu de fabricare a răcitorului termoelectric pentru substratul circuitului integrat
DE102011002458A1 (de) 2011-01-05 2012-07-05 Robert Bosch Gmbh Elektronische Baugruppe mit verbessertem Thermo-Management
JP6296687B2 (ja) 2012-04-27 2018-03-20 キヤノン株式会社 電子部品、電子モジュールおよびこれらの製造方法。
JP5885690B2 (ja) 2012-04-27 2016-03-15 キヤノン株式会社 電子部品および電子機器
JP2013243340A (ja) 2012-04-27 2013-12-05 Canon Inc 電子部品、実装部材、電子機器およびこれらの製造方法
EP2889902B1 (fr) * 2012-08-27 2021-09-22 Mitsubishi Electric Corporation Dispositif électrique à semi-conducteur de puissance
JP2017170627A (ja) * 2016-03-18 2017-09-28 富士電機株式会社 モールド製品の製造方法およびモールド製品
US11147156B2 (en) 2016-12-06 2021-10-12 Sumitomo Electric Industries, Ltd. Composite member, heat radiation member, semiconductor device, and method of manufacturing composite member
EP3506344A1 (fr) * 2017-12-29 2019-07-03 Siemens Aktiengesellschaft Module semi-conducteur
JP7202869B2 (ja) * 2018-12-10 2023-01-12 ヌヴォトンテクノロジージャパン株式会社 半導体装置及び半導体装置の製造方法
CN113133233A (zh) * 2020-01-15 2021-07-16 浙江盘毂动力科技有限公司 一种绝缘导热灌封电气元件及其灌封方法

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Publication number Priority date Publication date Assignee Title
EP1267400A2 (fr) * 2001-06-13 2002-12-18 Hitachi, Ltd. Elément en materiau composite pour une dispositif semi-conductrice et dispositif semi-conductrice isolée ou non-isolée utilisant le même
EP1267400A3 (fr) * 2001-06-13 2005-10-05 Hitachi, Ltd. Elément en materiau composite pour une dispositif semi-conductrice et dispositif semi-conductrice isolée ou non-isolée utilisant le même
US7368657B2 (en) 2002-01-30 2008-05-06 Toyo Aluminium Kabushiki Kaisha Paste composition and solar cell employing the same
DE10326274B4 (de) * 2002-01-30 2012-12-13 Toyo Aluminium K.K. Pastenzusammensetzung und Pastenzusammensetzung für eineSolarzelle

Also Published As

Publication number Publication date
RU2198949C2 (ru) 2003-02-20
US6611056B2 (en) 2003-08-26
US6630734B2 (en) 2003-10-07
EP1036849B1 (fr) 2005-01-12
US20020135061A1 (en) 2002-09-26
JP2000265227A (ja) 2000-09-26
DE60017304T2 (de) 2005-12-22
EP1036849A3 (fr) 2002-09-25
JP3690171B2 (ja) 2005-08-31
DE60017304D1 (de) 2005-02-17
US6646344B1 (en) 2003-11-11
KR20010049226A (ko) 2001-06-15
US20020145195A1 (en) 2002-10-10
US20040031545A1 (en) 2004-02-19

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