EP0897998B1 - Reduktives Ni-Bad - Google Patents
Reduktives Ni-Bad Download PDFInfo
- Publication number
- EP0897998B1 EP0897998B1 EP98114391A EP98114391A EP0897998B1 EP 0897998 B1 EP0897998 B1 EP 0897998B1 EP 98114391 A EP98114391 A EP 98114391A EP 98114391 A EP98114391 A EP 98114391A EP 0897998 B1 EP0897998 B1 EP 0897998B1
- Authority
- EP
- European Patent Office
- Prior art keywords
- bath
- nickel
- concentration
- stabiliser
- complexing agent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 title claims abstract description 107
- 229910052759 nickel Inorganic materials 0.000 title claims abstract description 54
- 230000002829 reductive effect Effects 0.000 title claims abstract description 9
- 239000003381 stabilizer Substances 0.000 claims abstract description 24
- 230000008021 deposition Effects 0.000 claims abstract description 18
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000007788 liquid Substances 0.000 claims abstract description 14
- 239000003638 chemical reducing agent Substances 0.000 claims abstract description 11
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims abstract description 5
- ACVYVLVWPXVTIT-UHFFFAOYSA-M phosphinate Chemical compound [O-][PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-M 0.000 claims abstract description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 4
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 4
- 229910052785 arsenic Inorganic materials 0.000 claims abstract description 4
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims abstract description 4
- 125000003118 aryl group Chemical group 0.000 claims abstract description 4
- 150000002815 nickel Chemical class 0.000 claims abstract description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 4
- 229910052718 tin Inorganic materials 0.000 claims abstract description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract 4
- 229910052716 thallium Inorganic materials 0.000 claims abstract 3
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 claims abstract 3
- 239000005864 Sulphur Substances 0.000 claims abstract 2
- TXCOQXKFOPSCPZ-UHFFFAOYSA-J molybdenum(4+);tetraacetate Chemical compound [Mo+4].CC([O-])=O.CC([O-])=O.CC([O-])=O.CC([O-])=O TXCOQXKFOPSCPZ-UHFFFAOYSA-J 0.000 claims abstract 2
- 239000008139 complexing agent Substances 0.000 claims description 15
- 230000002378 acidificating effect Effects 0.000 claims description 7
- 125000004432 carbon atom Chemical group C* 0.000 claims description 6
- 239000002253 acid Substances 0.000 claims description 5
- 230000001603 reducing effect Effects 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- GMEHFXXZSWDEDB-UHFFFAOYSA-N N-ethylthiourea Chemical compound CCNC(N)=S GMEHFXXZSWDEDB-UHFFFAOYSA-N 0.000 claims description 3
- 230000000536 complexating effect Effects 0.000 claims description 3
- 150000003585 thioureas Chemical class 0.000 claims description 3
- 150000007513 acids Chemical class 0.000 claims description 2
- GTRLQRHWPXEBLF-UHFFFAOYSA-N benzyl carbamimidothioate Chemical compound NC(=N)SCC1=CC=CC=C1 GTRLQRHWPXEBLF-UHFFFAOYSA-N 0.000 claims description 2
- 150000004653 carbonic acids Chemical class 0.000 claims 2
- 150000001261 hydroxy acids Chemical class 0.000 claims 2
- 108010077895 Sarcosine Proteins 0.000 claims 1
- 239000003795 chemical substances by application Substances 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- 150000002541 isothioureas Chemical class 0.000 claims 1
- ICYJJTNLBFMCOZ-UHFFFAOYSA-J molybdenum(4+);disulfate Chemical compound [Mo+4].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O ICYJJTNLBFMCOZ-UHFFFAOYSA-J 0.000 claims 1
- FSYKKLYZXJSNPZ-UHFFFAOYSA-N sarcosine Chemical compound C[NH2+]CC([O-])=O FSYKKLYZXJSNPZ-UHFFFAOYSA-N 0.000 claims 1
- 125000001424 substituent group Chemical group 0.000 claims 1
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Natural products NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 abstract description 7
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical compound OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 abstract description 3
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 abstract 1
- ZMZDMBWJUHKJPS-UHFFFAOYSA-M Thiocyanate anion Chemical compound [S-]C#N ZMZDMBWJUHKJPS-UHFFFAOYSA-M 0.000 abstract 1
- 239000011260 aqueous acid Substances 0.000 abstract 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 abstract 1
- ZMZDMBWJUHKJPS-UHFFFAOYSA-N hydrogen thiocyanate Natural products SC#N ZMZDMBWJUHKJPS-UHFFFAOYSA-N 0.000 abstract 1
- 229910021653 sulphate ion Inorganic materials 0.000 abstract 1
- 150000003628 tricarboxylic acids Chemical class 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 19
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 11
- 229910052737 gold Inorganic materials 0.000 description 11
- 239000010931 gold Substances 0.000 description 11
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 8
- 230000007797 corrosion Effects 0.000 description 8
- 238000005260 corrosion Methods 0.000 description 8
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 6
- 229910052698 phosphorus Inorganic materials 0.000 description 6
- 239000011574 phosphorus Substances 0.000 description 6
- 238000000926 separation method Methods 0.000 description 6
- 238000000354 decomposition reaction Methods 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- CIEZZGWIJBXOTE-UHFFFAOYSA-N 2-[bis(carboxymethyl)amino]propanoic acid Chemical compound OC(=O)C(C)N(CC(O)=O)CC(O)=O CIEZZGWIJBXOTE-UHFFFAOYSA-N 0.000 description 3
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 3
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 3
- 229910021529 ammonia Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000005764 inhibitory process Effects 0.000 description 3
- 239000011734 sodium Substances 0.000 description 3
- 229910052708 sodium Inorganic materials 0.000 description 3
- 229910052717 sulfur Inorganic materials 0.000 description 3
- 239000011593 sulfur Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 150000001768 cations Chemical class 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 description 2
- 235000013336 milk Nutrition 0.000 description 2
- 239000008267 milk Substances 0.000 description 2
- 210000004080 milk Anatomy 0.000 description 2
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 description 2
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 239000000052 vinegar Substances 0.000 description 2
- 235000021419 vinegar Nutrition 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- ZNBNBTIDJSKEAM-UHFFFAOYSA-N 4-[7-hydroxy-2-[5-[5-[6-hydroxy-6-(hydroxymethyl)-3,5-dimethyloxan-2-yl]-3-methyloxolan-2-yl]-5-methyloxolan-2-yl]-2,8-dimethyl-1,10-dioxaspiro[4.5]decan-9-yl]-2-methyl-3-propanoyloxypentanoic acid Chemical compound C1C(O)C(C)C(C(C)C(OC(=O)CC)C(C)C(O)=O)OC11OC(C)(C2OC(C)(CC2)C2C(CC(O2)C2C(CC(C)C(O)(CO)O2)C)C)CC1 ZNBNBTIDJSKEAM-UHFFFAOYSA-N 0.000 description 1
- KWSLGOVYXMQPPX-UHFFFAOYSA-N 5-[3-(trifluoromethyl)phenyl]-2h-tetrazole Chemical compound FC(F)(F)C1=CC=CC(C2=NNN=N2)=C1 KWSLGOVYXMQPPX-UHFFFAOYSA-N 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonium chloride Substances [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 244000248349 Citrus limon Species 0.000 description 1
- 235000005979 Citrus limon Nutrition 0.000 description 1
- RGHNJXZEOKUKBD-SQOUGZDYSA-N D-gluconic acid Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C(O)=O RGHNJXZEOKUKBD-SQOUGZDYSA-N 0.000 description 1
- PDQAZBWRQCGBEV-UHFFFAOYSA-N Ethylenethiourea Chemical compound S=C1NCCN1 PDQAZBWRQCGBEV-UHFFFAOYSA-N 0.000 description 1
- 235000011430 Malus pumila Nutrition 0.000 description 1
- 235000015103 Malus silvestris Nutrition 0.000 description 1
- 229910021586 Nickel(II) chloride Inorganic materials 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000003287 bathing Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 238000010668 complexation reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- MSNOMDLPLDYDME-UHFFFAOYSA-N gold nickel Chemical compound [Ni].[Au] MSNOMDLPLDYDME-UHFFFAOYSA-N 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 229910000378 hydroxylammonium sulfate Inorganic materials 0.000 description 1
- 239000004310 lactic acid Substances 0.000 description 1
- 235000014655 lactic acid Nutrition 0.000 description 1
- 229940046892 lead acetate Drugs 0.000 description 1
- 150000002611 lead compounds Chemical class 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 150000001457 metallic cations Chemical class 0.000 description 1
- 239000005078 molybdenum compound Substances 0.000 description 1
- 150000002752 molybdenum compounds Chemical class 0.000 description 1
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000009938 salting Methods 0.000 description 1
- 239000001509 sodium citrate Substances 0.000 description 1
- NLJMYIDDQXHKNR-UHFFFAOYSA-K sodium citrate Chemical compound O.O.[Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O NLJMYIDDQXHKNR-UHFFFAOYSA-K 0.000 description 1
- VILMUCRZVVVJCA-UHFFFAOYSA-M sodium glycolate Chemical compound [Na+].OCC([O-])=O VILMUCRZVVVJCA-UHFFFAOYSA-M 0.000 description 1
- 229910001379 sodium hypophosphite Inorganic materials 0.000 description 1
- NQXGLOVMOABDLI-UHFFFAOYSA-N sodium oxido(oxo)phosphanium Chemical compound [Na+].[O-][PH+]=O NQXGLOVMOABDLI-UHFFFAOYSA-N 0.000 description 1
- 239000001384 succinic acid Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/32—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
- C23C18/34—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron using reducing agents
- C23C18/36—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron using reducing agents using hypophosphites
Definitions
- the invention relates to an aqueous. acidic, reductively separating bath for electroless separation of Nickei.
- nickel / gold adhesion requires a nickel layer that is as pure as possible, whereby a phosphorus content of less than 10% is desirable.
- the well-known nickel baths contain the nickel to be deposited in the form of nickel sulfate or nickel chloride. The nickel present as a cation must be reduced for the purpose of its deposition become. This task is performed by sodium hypophoshite.
- As a complexing agent for the nickel are lemon, glycol. Milk, apple, vinegar, amino vinegar. Propion. Succinic acid, ammonium, sodium, sodium hydroxyacetate, sodium citrate. Sodium glyconate, hydroxylamine sulfate and mixtures of some of these acids known.
- TU Thiourea
- Stabilizers needed. Lead, tin, arsenic and molybdenum compounds are known. However, the stabilizer reduces the deposition rate.
- a disadvantage of the known baths is that in order to achieve acceptable separation rates, the bath must be operated at relatively high temperatures of over 90 ° C. At these temperatures, the thiourea is no longer sufficiently stable and its effects are no longer fully effective. To maintain the deposition rate, thiourea must therefore be added continuously. There is a gradual accumulation of the decomposition products of the thiourea in the bath and thus an increased deposition of sulfur in the nickel layer. This makes the deposited nickel layer less noble. This leads to an increased occurrence of corrosion after the exchange gold coating, in particular to pitting corrosion in holes in the printed circuit board. The corrosion values deteriorate with increasing bath age, since more and more thiourea has to be added. to maintain the deposition rate.
- MTO is derived from M etal T urn - O ver. that is, all of the nickel contained in the bath can only be reacted five times until the bath must be discarded.
- the present invention is based on the object of finding a composition for a bath of the type mentioned at the outset, with which a high-quality nickel layer formation with as few foreign deposits as possible is possible over a longer lifespan of the bath with a constant deposition rate.
- the limits for the complexing agent are chosen so that at the lower limit all of the nickel can still be complexed during the concentration exceeding the upper limit would be uneconomical.
- the accelerators used in the invention especially the thiourea derivative. are thermally more stable and more efficient than the accelerators previously used. This enables both the concentration of the accelerator and to keep the concentration of the stabilizer lower than before This has the advantage that fewer decomposition products are produced in the bath than before. especially the concentration of the accelerator and the one following it Concentration of the stabilizer can be lower from the outset than in State of the art. This not only leads to a longer lifespan, but also also for better controllability of the bathroom. First experiences show that lifetimes of up to 8 MTO are achieved with baths according to the invention become.
- the accelerator should be in 1 to 3 times the molar concentration of the stabilizer be included in the bathroom. Will the relationship between stabilizer and accelerator shifted towards the stabilizer, inhibition of Conductor edges and drill holes. If there is an excess of accelerator, it can increase Pitting corrosion occurs.
- the acidic character of the nickel bath is due to the carbon and hydroxy carboxylic acids certainly; the pH value is expedient by adding ammonia set to a value between 5 and 6.
- a certain buffer effect occurs through the complexing agent used. Over time it will Bath is becoming increasingly acidic due to the chemical process If the pH drops too much off, it is raised again by adding ammonia.
- Hypophosphite unfolds its reducing effect in the weakly acidic range. At a pH above 6 the reducing effect of the hypophosphite decreases. The same thing applies to a pH below 5. The hypophosphite reaches its optimum reducing effect for pH values between 4.6 and 5.5.
- the present bathroom is very well suited to printed circuit boards with a noble nickel adhesive layer with a Coating phosphorus content less than 10%.
- a subsequent one Coating the noble nickel layer with an exchange gold layer causes one Reduction of corrosion compared to a less noble one - coated with gold - Nickel layer.
- the exchange gold bath can be in a wide pH range be driven between 5.5 and 6.5.
- the bath temperature is expediently between 80 ° and 90 ° C., preferably a temperature of 85 ° to 90 ° C. is maintained in these temperature ranges one particularly economical deposition rates.
- the accelerator is above 90 ° C increasingly decomposes and foreign atoms in the bathroom accumulate then can be deposited together with the nickel and pitting could cause.
- a specifically complexing the stabilizer Complexing agent is added.
- This is preferably the case to methylglycine diacetic acid, preferably in a concentration ratio from 0.5 to 5 ml per liter of bath liquid is added.
- This prevents that the cation of the stabilizer fails and preferentially on edges or Drilled holes.
- This counteracts the so-called edge weakness, this means that there is no inhibition by the Stabilizer takes place that would locally inhibit the deposition of nickel.
- Another The advantage is that the stabilizer is not used up so quickly must be replenished. By adding the further complexing agent incredibly, does not affect the stability of the bathroom.
- a salary in the range mentioned is advantageous, but is due to a higher concentration no deterioration in bathing properties can be seen.
- the nickel content is preferably between 6 and 8 g per liter of bath liquid and the concentration of the reducing agent between 25 and 35 g per liter of bath liquid.
- the stoichiometric ratio is in these concentration ranges particularly advantageous between the dissolved nickel and its reducing agent, so that there is a constant deposition rate over several MTOs
- the concentration of the reducing agent is preferably 30 g per liter Bath liquid.
- the carbon or hydroxycarboxylic acids preferably contain no more than 16 C atoms.
- the alkyl groups present in the accelerator preferably do not contain contain more than 6, preferably not more than 4 carbon atoms or the aryl groups not more than 9, preferably not more than 6, carbon atoms.
- a mixture of milk, apple and / or is advantageously used as the complexing agent Acetic acid is used, the molar ratio of which is preferably about 11: 4: 1 reads. This relationship has proven particularly beneficial in terms of complexation of ionic nickel.
- the unfolds advantageously Effect of the complexing agent for a molar concentration between 0.6 and 0.8 Moles per liter. For the stabilizer is about 1 mg per liter Bath liquid cheap.
- N-ethyl thiourea or benzyl isothiourea are preferred accelerators used These two substances are thermally stable, so that hardly any Decomposition takes place, which would necessitate subsequent dosing. By the low formation of sulfur gives you a very pure nickel layer few built-in foreign atoms, which leads to good corrosion resistance leads.
- the pH of the bath should be 5.0 and is adjusted with ammonia solution.
- the bath is operated and enabled at a temperature of 88-90 ° C a deposition rate of 15 to 21 ⁇ m per hour.
- the new accelerator especially N-ethyl thiourea
- the risk of pitting corrosion is reduced because the storage of Sulfur in the deposited nickel layer is reduced.
- Particularly advantageous affects the good adhesion of gold on the nickel layer - due to a Phosphorus content less than 10% - on printed circuit boards. You also get with these small amounts of phosphorus in the nickel layer easily solderable and bondable Nickel / gold layers on the circuit board over the entire bath age of the Nickel baths.
- a second embodiment differs from the first only in that 3 ml of methylglycine-diacetic acid is added to the nickel bath. This is achieved. that the stabilizer is partially complexed, which surprisingly the accumulation of lead, e.g. on a conductor edge, is reduced.
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemically Coating (AREA)
- Manufacture And Refinement Of Metals (AREA)
- Catalysts (AREA)
Description
- 7 g Nickel in Form eines Nickelsulfats
- 35 g Natriumhypophosphit als Reduktionsmittel
- 27 g Milchsäure 90 %ig
- 23 g Bemsteinsäure
- 6 g Essigsäure
- 2 mg Blei in Form von Bleiacetat
- 1 mg N, N'-Ethylen-Thioharnstoff
- 2 ml Methylglycindiessigsäure
- Rest ist Wasser und Ammoniak.
Claims (14)
- Wässriges, saures, reduktiv abscheidendes Bad zum stromlosen Abscheiden von Nickel, welches in 1 Liter Badflüssigkeit folgende Mengen an gelösten Stoffen enthält:3 bis 10 g Nickel in Form eines Nickelsalzes,5 bis 45 g eines Hypophosphits als Reduktionsmittel,0,4 bis 1 Mol einer oder mehrerer Verbindungen aus der Gruppe der Carbon- und Hydroxicarbonsäuren, einschließlich ihrer Di- und Tricarbonsäuren, als Komplexbildner für das Nickel,0,5 bis 3 mg eines Blei-, Zinn-, Arsen-, Thallium- oder Molybdän-Acetats oder -Sulfats als Stabilisator,als Beschleuniger ein Thioharnstoff-, Isothioharnstoff- oder Rhodanidderivat, welche als Substituenten, am Stickstoff oder Schwefel, Alkyl- und/oder Aryl-Gruppen aufweisen, in der 1 bis 3-fachen Molkonzentration des Stabilisator undein spezifisch den Stabilisator komplexierender Komplexbildner zugesetzt ist.
- Bad nach Anspruch 1, dadurch gekennzeichnet, daß als Komplexbildner für den Stabilisator Methylglycin-Diessigsäure zugesetzt ist.
- Bad nach einem der vorstehenden Ansprüche, dadurch gekennzeichnet, daß der Nickelgehalt zwischen 6 und 8 g pro Liter Badflüssigkeit liegt
- Bad nach einem der vorstehenden Ansprüche, dadurch gekennzeichnet, daß die Konzentration des Reduktionsmittels zwischen 25 und 35 g pro Liter Badflüssigkeit liegt
- Bad nach einem der vorstehenden Ansprüche, dadurch gekennzeichnet, daß die Konzentration des Reduktionsmittels bei 30 g pro Liter Badflüssigkeit liegt.
- Bad nach einem der vorstehenden Ansprüche, dadurch gekennzeichnet, daß die Carbon- oder Hydroxicarbonsäuren nicht mehr als 16 C-Atome enthalten.
- Bad nach einem der vorstehenden Ansprüche, dadurch gekennzeichnet, daß der Komplexbildner für das Nickel Milch-, Äpfel- und/oder Essigsäure enthält.
- Bad nach einem der vorstehenden Ansprüche, dadurch gekennzeichnet, daß der Komplexbildner für das Nickel aus Milch-, Äpfel- und Essigsäure im Molverhältnis von etwa 11 : 4 : 1 besteht.
- Bad nach einem der vorstehenden Ansprüche, dadurch gekennzeichnet, daß die Konzentration des Komplexbildners für das Nickel zwischen 0,6 und 0,8 Mol pro Liter Badflüssigkeit liegt.
- Bad nach einem der vorstehenden Ansprüche, dadurch gekennzeichnet, daß die Konzentration des Stabilisators etwa 1 mg pro Liter Badflüssigkeit beträgt.
- Bad nach einem der vorstehenden Ansprüche, dadurch gekennzeichnet, daß die Konzentration des den Stabilisator komplexierenden Komplexbildners zwischen 0,5 und 5 ml pro Liter Badflüssigkeit liegt.
- Bad nach einem der vorstehenden Ansprüche, dadurch gekennzeichnet, daß die im Beschleuniger vorhandenen Alkyl-Gruppen nicht mehr als 6, vorzugsweise nicht mehr als 4 C-Atome, bzw. die Aryl-Gruppen nicht mehr als 9, vorzugsweise nicht mehr als 6 C-Atome, enthalten.
- Bad nach einem der vorstehenden Ansprüche, dadurch gekennzeichnet, daß das Thioharnstoffderivat ein N-Ethyl-Thioharnstoff ist.
- Bad nach einem der Ansprüche 1 bis 13, dadurch gekennzeichnet, daß das Isothioharnstoffderivat ein Benzyl-Isothioharnstoff ist.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19733991 | 1997-08-06 | ||
| DE19733991A DE19733991A1 (de) | 1997-08-06 | 1997-08-06 | Reduktives Ni-Bad |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| EP0897998A2 EP0897998A2 (de) | 1999-02-24 |
| EP0897998A3 EP0897998A3 (de) | 1999-05-12 |
| EP0897998B1 true EP0897998B1 (de) | 2001-12-05 |
Family
ID=7838137
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP98114391A Expired - Lifetime EP0897998B1 (de) | 1997-08-06 | 1998-07-31 | Reduktives Ni-Bad |
Country Status (3)
| Country | Link |
|---|---|
| EP (1) | EP0897998B1 (de) |
| AT (1) | ATE210207T1 (de) |
| DE (2) | DE19733991A1 (de) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7803457B2 (en) | 2003-12-29 | 2010-09-28 | General Electric Company | Composite coatings for groundwall insulation, method of manufacture thereof and articles derived therefrom |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19908755A1 (de) * | 1999-02-19 | 2000-08-24 | Atotech Deutschland Gmbh | Verfahren zum elektrolytischen Abscheiden einer Metallschicht auf elektrisch nichtleitenden Oberflächen |
| CN100590751C (zh) * | 2004-09-02 | 2010-02-17 | 积水化学工业株式会社 | 导电性微粒以及各向异性导电材料 |
| CN103422079B (zh) * | 2012-05-22 | 2016-04-13 | 比亚迪股份有限公司 | 一种化学镀铜液及其制备方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3489576A (en) * | 1966-08-04 | 1970-01-13 | Gen Motors Corp | Chemical nickel plating |
| US4483711A (en) * | 1983-06-17 | 1984-11-20 | Omi International Corporation | Aqueous electroless nickel plating bath and process |
| US4983428A (en) * | 1988-06-09 | 1991-01-08 | United Technologies Corporation | Ethylenethiourea wear resistant electroless nickel-boron coating compositions |
| KR960005765A (ko) * | 1994-07-14 | 1996-02-23 | 모리시다 요이치 | 반도체 장치의 배선형성에 이용하는 무전해 도금욕 및 반도체 장치의 배선성형방법 |
| TW390915B (en) * | 1995-10-23 | 2000-05-21 | Uyemura C & Co Ltd | Electroless nickel plating solution and method |
-
1997
- 1997-08-06 DE DE19733991A patent/DE19733991A1/de not_active Withdrawn
-
1998
- 1998-07-31 EP EP98114391A patent/EP0897998B1/de not_active Expired - Lifetime
- 1998-07-31 AT AT98114391T patent/ATE210207T1/de not_active IP Right Cessation
- 1998-07-31 DE DE59802304T patent/DE59802304D1/de not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7803457B2 (en) | 2003-12-29 | 2010-09-28 | General Electric Company | Composite coatings for groundwall insulation, method of manufacture thereof and articles derived therefrom |
Also Published As
| Publication number | Publication date |
|---|---|
| EP0897998A2 (de) | 1999-02-24 |
| EP0897998A3 (de) | 1999-05-12 |
| DE59802304D1 (de) | 2002-01-17 |
| ATE210207T1 (de) | 2001-12-15 |
| DE19733991A1 (de) | 1999-02-11 |
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