DE69919442D1 - Laserarray zur Emission von mehreren Wellenlängen - Google Patents
Laserarray zur Emission von mehreren WellenlängenInfo
- Publication number
- DE69919442D1 DE69919442D1 DE69919442T DE69919442T DE69919442D1 DE 69919442 D1 DE69919442 D1 DE 69919442D1 DE 69919442 T DE69919442 T DE 69919442T DE 69919442 T DE69919442 T DE 69919442T DE 69919442 D1 DE69919442 D1 DE 69919442D1
- Authority
- DE
- Germany
- Prior art keywords
- emission
- laser array
- several wavelengths
- wavelengths
- several
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
- H01S5/0234—Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
- H01S5/02355—Fixing laser chips on mounts
- H01S5/0237—Fixing laser chips on mounts by soldering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
- H01S5/04257—Electrodes, e.g. characterised by the structure characterised by the configuration having positive and negative electrodes on the same side of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34326—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on InGa(Al)P, e.g. red laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
- H01S5/4043—Edge-emitting structures with vertically stacked active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Nanotechnology (AREA)
- Chemical & Material Sciences (AREA)
- Biophysics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Semiconductor Lasers (AREA)
- Wire Bonding (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US73598 | 1987-07-13 | ||
US09/073,598 US6136623A (en) | 1998-05-06 | 1998-05-06 | Multiple wavelength laser arrays by flip-chip bonding |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69919442D1 true DE69919442D1 (de) | 2004-09-23 |
DE69919442T2 DE69919442T2 (de) | 2005-01-20 |
Family
ID=22114658
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69919442T Expired - Lifetime DE69919442T2 (de) | 1998-05-06 | 1999-04-28 | Laserarray zur Emission von mehreren Wellenlängen |
Country Status (4)
Country | Link |
---|---|
US (1) | US6136623A (de) |
EP (1) | EP0957548B1 (de) |
JP (2) | JPH11340587A (de) |
DE (1) | DE69919442T2 (de) |
Families Citing this family (72)
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US6136623A (en) * | 1998-05-06 | 2000-10-24 | Xerox Corporation | Multiple wavelength laser arrays by flip-chip bonding |
US6744800B1 (en) * | 1998-12-30 | 2004-06-01 | Xerox Corporation | Method and structure for nitride based laser diode arrays on an insulating substrate |
US20010042866A1 (en) * | 1999-02-05 | 2001-11-22 | Carrie Carter Coman | Inxalygazn optical emitters fabricated via substrate removal |
JP3685306B2 (ja) * | 1999-03-03 | 2005-08-17 | パイオニア株式会社 | 2波長半導体レーザ素子及びその製造方法 |
US6348739B1 (en) * | 1999-04-28 | 2002-02-19 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device and method of manufacturing the same |
US6423560B1 (en) * | 1999-10-22 | 2002-07-23 | Teraconnect, Incoporated | Method of making an optoelectronic device using multiple etch stop layers |
US6430058B1 (en) * | 1999-12-02 | 2002-08-06 | Intel Corporation | Integrated circuit package |
JP3809464B2 (ja) * | 1999-12-14 | 2006-08-16 | 独立行政法人理化学研究所 | 半導体層の形成方法 |
JP3486900B2 (ja) * | 2000-02-15 | 2004-01-13 | ソニー株式会社 | 発光装置およびそれを用いた光装置 |
JP2001244569A (ja) * | 2000-03-01 | 2001-09-07 | Sony Corp | 半導体レーザ発光装置の製造方法 |
US7831151B2 (en) * | 2001-06-29 | 2010-11-09 | John Trezza | Redundant optical device array |
US6620642B2 (en) | 2001-06-29 | 2003-09-16 | Xanoptix, Inc. | Opto-electronic device integration |
US6753197B2 (en) | 2001-06-29 | 2004-06-22 | Xanoptix, Inc. | Opto-electronic device integration |
US6633421B2 (en) | 2001-06-29 | 2003-10-14 | Xanoptrix, Inc. | Integrated arrays of modulators and lasers on electronics |
US6724794B2 (en) | 2001-06-29 | 2004-04-20 | Xanoptix, Inc. | Opto-electronic device integration |
US6790691B2 (en) | 2001-06-29 | 2004-09-14 | Xanoptix, Inc. | Opto-electronic device integration |
US6731665B2 (en) | 2001-06-29 | 2004-05-04 | Xanoptix Inc. | Laser arrays for high power fiber amplifier pumps |
US6775308B2 (en) | 2001-06-29 | 2004-08-10 | Xanoptix, Inc. | Multi-wavelength semiconductor laser arrays and applications thereof |
JP3736462B2 (ja) * | 2002-01-17 | 2006-01-18 | ソニー株式会社 | 半導体レーザ装置 |
AU2003256382A1 (en) * | 2002-07-06 | 2004-01-23 | Optical Communication Products, Inc. | Method of self-aligning an oxide aperture with an annular intra-cavity contact in a long wavelength vcsel |
JP2004207480A (ja) | 2002-12-25 | 2004-07-22 | Pioneer Electronic Corp | 半導体レーザ装置及びその製造方法 |
JP2004207479A (ja) * | 2002-12-25 | 2004-07-22 | Pioneer Electronic Corp | 半導体レーザ装置及びその製造方法 |
US7079559B2 (en) * | 2003-02-25 | 2006-07-18 | Tyco Electronics Corporation | Flip-chip automatically aligned optical device |
JP2004304111A (ja) | 2003-04-01 | 2004-10-28 | Sharp Corp | 多波長レーザ装置 |
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JP4535698B2 (ja) * | 2003-07-17 | 2010-09-01 | 三洋電機株式会社 | 2波長半導体レーザ装置 |
JP2011023754A (ja) * | 2004-03-30 | 2011-02-03 | Sanyo Electric Co Ltd | 半導体レーザ装置 |
JP4660224B2 (ja) * | 2004-03-30 | 2011-03-30 | 三洋電機株式会社 | 半導体レーザ装置 |
JP4583128B2 (ja) * | 2004-03-30 | 2010-11-17 | 三洋電機株式会社 | 半導体レーザ装置 |
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JP4671728B2 (ja) * | 2005-03-25 | 2011-04-20 | 三洋電機株式会社 | 半導体レーザ装置および光ピックアップ装置 |
JP2006278577A (ja) * | 2005-03-28 | 2006-10-12 | Sanyo Electric Co Ltd | 半導体レーザ装置 |
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JP4595929B2 (ja) * | 2006-11-28 | 2010-12-08 | ソニー株式会社 | 発光装置の製造方法 |
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US7994524B1 (en) * | 2007-09-12 | 2011-08-09 | David Yaunien Chung | Vertically structured LED array light source |
US8995493B2 (en) | 2009-02-17 | 2015-03-31 | Trilumina Corp. | Microlenses for multibeam arrays of optoelectronic devices for high frequency operation |
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JP5488881B2 (ja) * | 2009-09-30 | 2014-05-14 | ソニー株式会社 | 発光装置およびその製造方法 |
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JPH0888431A (ja) * | 1994-09-16 | 1996-04-02 | Mitsubishi Electric Corp | 半導体レーザ装置及びその製造方法 |
JP3419930B2 (ja) * | 1994-12-21 | 2003-06-23 | 三菱電機株式会社 | 半導体レーザ装置とこの半導体レーザ装置を備えた光ディスク装置 |
JP2822916B2 (ja) * | 1995-03-10 | 1998-11-11 | 日本電気株式会社 | 半導体装置の製造方法 |
JP3093646B2 (ja) * | 1996-08-09 | 2000-10-03 | 日本電気株式会社 | 半導体レーザ装置 |
US5812576A (en) * | 1996-08-26 | 1998-09-22 | Xerox Corporation | Loss-guided semiconductor lasers |
US5999553A (en) * | 1997-11-25 | 1999-12-07 | Xerox Corporation | Monolithic red/ir side by side laser fabricated from a stacked dual laser structure by ion implantation channel |
JPH11186651A (ja) * | 1997-12-19 | 1999-07-09 | Sony Corp | 集積型半導体発光装置 |
US5920766A (en) * | 1998-01-07 | 1999-07-06 | Xerox Corporation | Red and blue stacked laser diode array by wafer fusion |
US6136623A (en) * | 1998-05-06 | 2000-10-24 | Xerox Corporation | Multiple wavelength laser arrays by flip-chip bonding |
-
1998
- 1998-05-06 US US09/073,598 patent/US6136623A/en not_active Expired - Lifetime
-
1999
- 1999-04-28 DE DE69919442T patent/DE69919442T2/de not_active Expired - Lifetime
- 1999-04-28 EP EP99303310A patent/EP0957548B1/de not_active Expired - Lifetime
- 1999-04-30 JP JP11125194A patent/JPH11340587A/ja active Pending
-
2010
- 2010-05-26 JP JP2010120214A patent/JP5194055B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE69919442T2 (de) | 2005-01-20 |
EP0957548A2 (de) | 1999-11-17 |
EP0957548A3 (de) | 2000-12-27 |
JP5194055B2 (ja) | 2013-05-08 |
US6136623A (en) | 2000-10-24 |
EP0957548B1 (de) | 2004-08-18 |
JP2010183120A (ja) | 2010-08-19 |
JPH11340587A (ja) | 1999-12-10 |
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