DE69918436T2 - Verfahren zur Verbesserung der Leitfähigkeit von Elektroden für Anzeigesubstraten mit metallischen Hilfsschichten - Google Patents
Verfahren zur Verbesserung der Leitfähigkeit von Elektroden für Anzeigesubstraten mit metallischen Hilfsschichten Download PDFInfo
- Publication number
- DE69918436T2 DE69918436T2 DE69918436T DE69918436T DE69918436T2 DE 69918436 T2 DE69918436 T2 DE 69918436T2 DE 69918436 T DE69918436 T DE 69918436T DE 69918436 T DE69918436 T DE 69918436T DE 69918436 T2 DE69918436 T2 DE 69918436T2
- Authority
- DE
- Germany
- Prior art keywords
- resist
- strips
- metal
- substrate
- electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 title claims description 80
- 238000000034 method Methods 0.000 title claims description 42
- 239000002184 metal Substances 0.000 claims description 73
- 229910052751 metal Inorganic materials 0.000 claims description 73
- 239000000463 material Substances 0.000 claims description 48
- 229910052802 copper Inorganic materials 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 9
- 230000008569 process Effects 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 5
- 239000007769 metal material Substances 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 2
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 229910052718 tin Inorganic materials 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 239000011344 liquid material Substances 0.000 claims 3
- 229920002120 photoresistant polymer Polymers 0.000 description 15
- 239000004973 liquid crystal related substance Substances 0.000 description 10
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 9
- 239000010949 copper Substances 0.000 description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 8
- 239000004020 conductor Substances 0.000 description 8
- 239000011159 matrix material Substances 0.000 description 7
- 238000001465 metallisation Methods 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000005499 meniscus Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000005496 tempering Methods 0.000 description 2
- 229920002799 BoPET Polymers 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000003999 initiator Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910052752 metalloid Inorganic materials 0.000 description 1
- 150000002738 metalloids Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
- G02F1/134336—Matrix
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
- H10K50/814—Anodes combined with auxiliary electrodes, e.g. ITO layer combined with metal lines
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K2323/00—Functional layers of liquid crystal optical display excluding electroactive liquid crystal layer characterised by chemical composition
- C09K2323/06—Substrate layer characterised by chemical composition
- C09K2323/061—Inorganic, e.g. ceramic, metallic or glass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8051—Anodes
- H10K59/80516—Anodes combined with auxiliary electrodes, e.g. ITO layer combined with metal lines
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Optics & Photonics (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Geometry (AREA)
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US76165 | 1998-05-12 | ||
| US09/076,165 US6037005A (en) | 1998-05-12 | 1998-05-12 | Display substrate electrodes with auxiliary metal layers for enhanced conductivity |
| PCT/US1999/007065 WO1999059024A2 (en) | 1998-05-12 | 1999-03-31 | Display substrate electrodes with auxiliary metal layers for enhanced conductivity |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69918436D1 DE69918436D1 (de) | 2004-08-05 |
| DE69918436T2 true DE69918436T2 (de) | 2005-07-28 |
Family
ID=22130346
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69918436T Expired - Lifetime DE69918436T2 (de) | 1998-05-12 | 1999-03-31 | Verfahren zur Verbesserung der Leitfähigkeit von Elektroden für Anzeigesubstraten mit metallischen Hilfsschichten |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US6037005A (enExample) |
| EP (2) | EP1469341A1 (enExample) |
| JP (1) | JP2002514790A (enExample) |
| KR (1) | KR100614456B1 (enExample) |
| AU (1) | AU3374099A (enExample) |
| CA (1) | CA2331044A1 (enExample) |
| DE (1) | DE69918436T2 (enExample) |
| WO (1) | WO1999059024A2 (enExample) |
Families Citing this family (47)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3737176B2 (ja) | 1995-12-21 | 2006-01-18 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
| JP3907804B2 (ja) * | 1997-10-06 | 2007-04-18 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
| JP2000098116A (ja) * | 1998-09-18 | 2000-04-07 | Canon Inc | 素子又は素子作製用モールド型の作製方法 |
| JP4434411B2 (ja) | 2000-02-16 | 2010-03-17 | 出光興産株式会社 | アクティブ駆動型有機ｅｌ発光装置およびその製造方法 |
| JP3617458B2 (ja) | 2000-02-18 | 2005-02-02 | セイコーエプソン株式会社 | 表示装置用基板、液晶装置及び電子機器 |
| US7022910B2 (en) | 2002-03-29 | 2006-04-04 | Konarka Technologies, Inc. | Photovoltaic cells utilizing mesh electrodes |
| US6841008B1 (en) * | 2000-07-17 | 2005-01-11 | Cypress Semiconductor Corporation | Method for cleaning plasma etch chamber structures |
| JP2002131773A (ja) * | 2000-10-26 | 2002-05-09 | Sharp Corp | 液晶表示素子 |
| GB0029315D0 (en) * | 2000-12-01 | 2001-01-17 | Koninkl Philips Electronics Nv | Method of increasing the conductivity of a transparent conductive layer |
| GB0029427D0 (en) * | 2000-12-02 | 2001-01-17 | Koninkl Philips Electronics Nv | Pixellated devices such as active matrix liquid crystal displays |
| GB0102167D0 (en) | 2001-01-27 | 2001-03-14 | Koninl Philips Electronics Nv | Pixellated devices such as active matrix liquid crystal displys and methods of manufacturing such |
| GB0102756D0 (en) * | 2001-02-03 | 2001-03-21 | Koninkl Philips Electronics Nv | Method of improving the conductivity of transparent conductor lines |
| US6798464B2 (en) | 2001-05-11 | 2004-09-28 | International Business Machines Corporation | Liquid crystal display |
| JP2002343580A (ja) * | 2001-05-11 | 2002-11-29 | Pioneer Electronic Corp | 発光ディスプレイ装置及びその製造方法 |
| RU2209456C2 (ru) * | 2001-07-26 | 2003-07-27 | ОПТИВА, Инк. | Жидкокристаллический дисплей и способ его изготовления |
| US7053970B2 (en) * | 2001-07-26 | 2006-05-30 | Nitto Denko Corporation | Liquid crystal display and the method of its fabrication |
| TW588204B (en) * | 2002-03-14 | 2004-05-21 | Wintek Corp | Transparent conduction plate having low junction resistance and manufacturing method thereof |
| US20040188150A1 (en) * | 2003-03-25 | 2004-09-30 | 3M Innovative Properties Company | High transparency touch screen |
| US20050156512A1 (en) * | 2003-12-30 | 2005-07-21 | Vadim Savvateev | Electroluminescent devices with at least one electrode having apertures and methods of using such devices |
| KR101026804B1 (ko) | 2004-02-20 | 2011-04-04 | 삼성전자주식회사 | 유기 전계 발광 표시장치의 보조전극 형성방법 |
| KR101026982B1 (ko) | 2004-06-03 | 2011-04-11 | 엘지디스플레이 주식회사 | 액정표시장치용 어레이 기판과 제조방법 |
| KR100620851B1 (ko) * | 2004-06-14 | 2006-09-19 | 엘지전자 주식회사 | 유기 전계발광 표시소자 및 그 제조방법 |
| KR100692865B1 (ko) * | 2004-10-29 | 2007-03-09 | 엘지전자 주식회사 | 유기 전계발광표시소자 및 그 제조방법 |
| US7160583B2 (en) * | 2004-12-03 | 2007-01-09 | 3M Innovative Properties Company | Microfabrication using patterned topography and self-assembled monolayers |
| JP4595565B2 (ja) * | 2005-01-31 | 2010-12-08 | 株式会社デンソー | 自発光表示装置 |
| US7992293B2 (en) * | 2006-04-04 | 2011-08-09 | Hanita Coatings R.C.A. Ltd | Method of manufacturing a patterned conductive layer |
| US20090165296A1 (en) * | 2006-04-04 | 2009-07-02 | Yoash Carmi | Patterns of conductive objects on a substrate and method of producing thereof |
| TW200818981A (en) * | 2006-08-30 | 2008-04-16 | Sumitomo Chemical Co | Organic electroluminescence device |
| EP1978407A1 (en) * | 2007-03-28 | 2008-10-08 | CRF Societa'Consortile per Azioni | Method for obtaining a transparent conductive film |
| WO2008122027A2 (en) | 2007-04-02 | 2008-10-09 | Konarka Technologies, Inc. | Novel electrode |
| CN101304640B (zh) * | 2007-05-09 | 2011-03-30 | 深圳富泰宏精密工业有限公司 | 电子产品的壳体及其制造方法 |
| FR2917897B1 (fr) * | 2007-06-25 | 2010-05-28 | Univ Rennes | Multicouche transparent et conducteur |
| JP5571870B2 (ja) * | 2007-09-21 | 2014-08-13 | 株式会社東芝 | 極微細構造を有する光透過型金属電極およびその製造方法 |
| US20100270058A1 (en) * | 2007-12-14 | 2010-10-28 | 3M Innovative Properties Company | Methods for making electronic devices |
| JP5283926B2 (ja) * | 2008-02-25 | 2013-09-04 | 株式会社東芝 | 光透過型金属電極およびその製造方法 |
| FR2928463B1 (fr) * | 2008-03-04 | 2010-12-03 | Saint Gobain | Dispositif electrochrome comportant un maillage. |
| CN102124825B (zh) * | 2008-06-30 | 2014-04-30 | 3M创新有限公司 | 形成图案化基材的方法 |
| EP2623632A3 (en) * | 2008-06-30 | 2017-01-18 | 3M Innovative Properties Company | Method of forming a microstructure |
| FR2934417B1 (fr) | 2008-07-25 | 2010-11-05 | Centre Nat Rech Scient | Composants electroniques a encapsulation integree |
| TWI459436B (zh) * | 2008-10-27 | 2014-11-01 | Tpk Touch Solutions Inc | The Method of Making Double - sided Graphic Structure of Touch Circuit |
| KR101070114B1 (ko) * | 2009-09-15 | 2011-10-05 | 삼성전기주식회사 | 디스플레이용 어레이 기판 및 디스플레이용 기판의 제조 방법 |
| BR112013020151A2 (pt) * | 2011-02-09 | 2016-11-08 | Kinestral Technologies Inc | dispositivos eletrocrômicos de multicamadas com comutação espacialmente coordenada |
| WO2014088950A1 (en) * | 2012-12-07 | 2014-06-12 | 3M Innovative Properties Company | Method of making transparent conductors on a substrate |
| CN103021291B (zh) * | 2012-12-27 | 2015-06-03 | 广东威创视讯科技股份有限公司 | 一种高像素密度led显示屏 |
| US9980394B2 (en) * | 2013-07-31 | 2018-05-22 | 3M Innovative Properties Company | Bonding electronic components to patterned nanowire transparent conductors |
| US20160266496A1 (en) * | 2015-03-10 | 2016-09-15 | Uab Research Foundation | Fabrication and encapsulation of micro-circuits on diamond and uses thereof |
| TWI677123B (zh) * | 2018-11-29 | 2019-11-11 | 機光科技股份有限公司 | 去定位器及使用該去定位器的發光裝置 |
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| JPS4942437A (enExample) * | 1972-04-05 | 1974-04-22 | ||
| JPS6019608B2 (ja) * | 1978-10-03 | 1985-05-17 | シャープ株式会社 | 電極パタ−ン形成方法 |
| JPH0685032B2 (ja) * | 1985-10-17 | 1994-10-26 | キヤノン株式会社 | カイラルスメクティック液晶素子 |
| JPS6365063A (ja) * | 1986-09-08 | 1988-03-23 | Ricoh Co Ltd | 補助金属電極付き透明電極の形成方法 |
| JPS6432233A (en) * | 1987-07-28 | 1989-02-02 | Sharp Kk | Liquid crystal display device |
| JP2694229B2 (ja) * | 1988-03-07 | 1997-12-24 | 株式会社 半導体エネルギー研究所 | 電気光学装置用電極の作製方法 |
| US5187601A (en) * | 1988-03-07 | 1993-02-16 | Semiconductor Energy Laboratory Co., Ltd. | Method for making a high contrast liquid crystal display including laser scribing opaque and transparent conductive strips simultaneously |
| JPH0216529A (ja) * | 1988-07-05 | 1990-01-19 | Seiko Epson Corp | 透明電極の低抵抗化方法 |
| JPH02228629A (ja) * | 1989-02-28 | 1990-09-11 | Sharp Corp | 液晶表示装置 |
| JPH03125443A (ja) * | 1989-10-09 | 1991-05-28 | Sharp Corp | 実装基板の電極及び該実装基板の電極を有する液晶表示装置 |
| JPH03245527A (ja) * | 1990-02-23 | 1991-11-01 | Rohm Co Ltd | 微細加工方法 |
| JP2652072B2 (ja) * | 1990-02-26 | 1997-09-10 | キヤノン株式会社 | 遮光層の形成方法 |
| JP2601932B2 (ja) * | 1990-04-13 | 1997-04-23 | インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン | 液晶表示装置およびその製造方法 |
| US5282068A (en) * | 1990-11-08 | 1994-01-25 | Canon Kabushiki Kaisha | Liquid crystal display with opaque insulating layer and metal layer at and wider than inter-electrode gap and method of manufacturing |
| JPH04280227A (ja) * | 1991-03-07 | 1992-10-06 | Fuji Photo Film Co Ltd | 液晶表示素子の製造方法 |
| JPH04360124A (ja) * | 1991-06-07 | 1992-12-14 | Hitachi Ltd | 液晶表示素子 |
| EP0534467B1 (en) * | 1991-09-26 | 1997-03-12 | Kabushiki Kaisha Toshiba | Electrode structure of a liquid crystal display device and method of manufacturing the liquid crystal display device |
| US5163220A (en) * | 1991-10-09 | 1992-11-17 | The Unites States Of America As Represented By The Secretary Of The Army | Method of enhancing the electrical conductivity of indium-tin-oxide electrode stripes |
| JP2877588B2 (ja) * | 1991-10-28 | 1999-03-31 | ローム株式会社 | 金属酸化物薄膜のパターン形成法 |
| US5268782A (en) * | 1992-01-16 | 1993-12-07 | Minnesota Mining And Manufacturing Company | Micro-ridged, polymeric liquid crystal display substrate and display device |
| JP2823178B2 (ja) * | 1992-04-06 | 1998-11-11 | シャープ株式会社 | 金属配線基板及びその製造方法 |
| JPH06148661A (ja) * | 1992-11-12 | 1994-05-27 | Matsushita Electric Ind Co Ltd | 表示装置用基板の製法 |
| US5342477A (en) * | 1993-07-14 | 1994-08-30 | Micron Display Technology, Inc. | Low resistance electrodes useful in flat panel displays |
| US5426266A (en) * | 1993-11-08 | 1995-06-20 | Planar Systems, Inc. | Die bonding connector and method |
| TW340192B (en) * | 1993-12-07 | 1998-09-11 | Sharp Kk | A display board having wiring with three-layered structure and a display device including the display board |
| DE69634376D1 (de) * | 1995-05-12 | 2005-03-31 | St Microelectronics Inc | IC-Packungsfassungssystem mit niedrigem Profil |
| US5646480A (en) * | 1995-06-19 | 1997-07-08 | Northrop Grumman Corporation | Metal assist structure for an electroluminescent display |
| JPH09230359A (ja) * | 1996-02-27 | 1997-09-05 | Matsushita Electric Ind Co Ltd | 液晶素子とその製造方法 |
-
1998
- 1998-05-12 US US09/076,165 patent/US6037005A/en not_active Expired - Lifetime
-
1999
- 1999-03-31 JP JP2000548768A patent/JP2002514790A/ja active Pending
- 1999-03-31 WO PCT/US1999/007065 patent/WO1999059024A2/en not_active Ceased
- 1999-03-31 EP EP04015150A patent/EP1469341A1/en not_active Withdrawn
- 1999-03-31 KR KR1020007012603A patent/KR100614456B1/ko not_active Expired - Fee Related
- 1999-03-31 CA CA002331044A patent/CA2331044A1/en not_active Abandoned
- 1999-03-31 DE DE69918436T patent/DE69918436T2/de not_active Expired - Lifetime
- 1999-03-31 EP EP99915155A patent/EP1084445B1/en not_active Expired - Lifetime
- 1999-03-31 AU AU33740/99A patent/AU3374099A/en not_active Abandoned
- 1999-10-22 US US09/425,098 patent/US6198051B1/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| DE69918436D1 (de) | 2004-08-05 |
| US6198051B1 (en) | 2001-03-06 |
| EP1084445A2 (en) | 2001-03-21 |
| WO1999059024A3 (en) | 2000-01-13 |
| EP1084445B1 (en) | 2004-06-30 |
| CA2331044A1 (en) | 1999-11-18 |
| AU3374099A (en) | 1999-11-29 |
| EP1469341A1 (en) | 2004-10-20 |
| KR20010043511A (ko) | 2001-05-25 |
| JP2002514790A (ja) | 2002-05-21 |
| US6037005A (en) | 2000-03-14 |
| KR100614456B1 (ko) | 2006-08-23 |
| WO1999059024A2 (en) | 1999-11-18 |
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