JP2002514790A - 導電性を強化するための補助金属層を備えたディスプレー基板電極 - Google Patents

導電性を強化するための補助金属層を備えたディスプレー基板電極

Info

Publication number
JP2002514790A
JP2002514790A JP2000548768A JP2000548768A JP2002514790A JP 2002514790 A JP2002514790 A JP 2002514790A JP 2000548768 A JP2000548768 A JP 2000548768A JP 2000548768 A JP2000548768 A JP 2000548768A JP 2002514790 A JP2002514790 A JP 2002514790A
Authority
JP
Japan
Prior art keywords
strip
substrate
metal
resist
transparent conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000548768A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002514790A5 (enExample
Inventor
エス． モシュレフザデー，ロバート
パデヤス，ラフナス
Original Assignee
ミネソタ マイニング アンド マニュファクチャリング カンパニー
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ミネソタ マイニング アンド マニュファクチャリング カンパニー filed Critical ミネソタ マイニング アンド マニュファクチャリング カンパニー
Publication of JP2002514790A publication Critical patent/JP2002514790A/ja
Publication of JP2002514790A5 publication Critical patent/JP2002514790A5/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134336—Matrix
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/814—Anodes combined with auxiliary electrodes, e.g. ITO layer combined with metal lines
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K2323/00—Functional layers of liquid crystal optical display excluding electroactive liquid crystal layer characterised by chemical composition
    • C09K2323/06—Substrate layer characterised by chemical composition
    • C09K2323/061—Inorganic, e.g. ceramic, metallic or glass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H10K59/80516—Anodes combined with auxiliary electrodes, e.g. ITO layer combined with metal lines

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Optics & Photonics (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
JP2000548768A 1998-05-12 1999-03-31 導電性を強化するための補助金属層を備えたディスプレー基板電極 Pending JP2002514790A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/076,165 US6037005A (en) 1998-05-12 1998-05-12 Display substrate electrodes with auxiliary metal layers for enhanced conductivity
US09/076,165 1998-05-12
PCT/US1999/007065 WO1999059024A2 (en) 1998-05-12 1999-03-31 Display substrate electrodes with auxiliary metal layers for enhanced conductivity

Publications (2)

Publication Number Publication Date
JP2002514790A true JP2002514790A (ja) 2002-05-21
JP2002514790A5 JP2002514790A5 (enExample) 2006-05-25

Family

ID=22130346

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000548768A Pending JP2002514790A (ja) 1998-05-12 1999-03-31 導電性を強化するための補助金属層を備えたディスプレー基板電極

Country Status (8)

Country Link
US (2) US6037005A (enExample)
EP (2) EP1469341A1 (enExample)
JP (1) JP2002514790A (enExample)
KR (1) KR100614456B1 (enExample)
AU (1) AU3374099A (enExample)
CA (1) CA2331044A1 (enExample)
DE (1) DE69918436T2 (enExample)
WO (1) WO1999059024A2 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101026804B1 (ko) 2004-02-20 2011-04-04 삼성전자주식회사 유기 전계 발광 표시장치의 보조전극 형성방법
JP2016530622A (ja) * 2013-07-31 2016-09-29 スリーエム イノベイティブ プロパティズ カンパニー 電子的構成要素とパターン化ナノワイヤ透明伝導体との接合

Families Citing this family (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3737176B2 (ja) * 1995-12-21 2006-01-18 株式会社半導体エネルギー研究所 液晶表示装置
JP3907804B2 (ja) * 1997-10-06 2007-04-18 株式会社半導体エネルギー研究所 液晶表示装置
JP2000098116A (ja) * 1998-09-18 2000-04-07 Canon Inc 素子又は素子作製用モールド型の作製方法
JP4434411B2 (ja) * 2000-02-16 2010-03-17 出光興産株式会社 アクティブ駆動型有機ｅｌ発光装置およびその製造方法
JP3617458B2 (ja) 2000-02-18 2005-02-02 セイコーエプソン株式会社 表示装置用基板、液晶装置及び電子機器
US7022910B2 (en) 2002-03-29 2006-04-04 Konarka Technologies, Inc. Photovoltaic cells utilizing mesh electrodes
US6841008B1 (en) * 2000-07-17 2005-01-11 Cypress Semiconductor Corporation Method for cleaning plasma etch chamber structures
JP2002131773A (ja) * 2000-10-26 2002-05-09 Sharp Corp 液晶表示素子
GB0029315D0 (en) * 2000-12-01 2001-01-17 Koninkl Philips Electronics Nv Method of increasing the conductivity of a transparent conductive layer
GB0029427D0 (en) * 2000-12-02 2001-01-17 Koninkl Philips Electronics Nv Pixellated devices such as active matrix liquid crystal displays
GB0102167D0 (en) 2001-01-27 2001-03-14 Koninl Philips Electronics Nv Pixellated devices such as active matrix liquid crystal displys and methods of manufacturing such
GB0102756D0 (en) * 2001-02-03 2001-03-21 Koninkl Philips Electronics Nv Method of improving the conductivity of transparent conductor lines
JP2002343580A (ja) * 2001-05-11 2002-11-29 Pioneer Electronic Corp 発光ディスプレイ装置及びその製造方法
US6798464B2 (en) 2001-05-11 2004-09-28 International Business Machines Corporation Liquid crystal display
RU2209456C2 (ru) * 2001-07-26 2003-07-27 ОПТИВА, Инк. Жидкокристаллический дисплей и способ его изготовления
US7053970B2 (en) * 2001-07-26 2006-05-30 Nitto Denko Corporation Liquid crystal display and the method of its fabrication
TW588204B (en) * 2002-03-14 2004-05-21 Wintek Corp Transparent conduction plate having low junction resistance and manufacturing method thereof
US20040188150A1 (en) * 2003-03-25 2004-09-30 3M Innovative Properties Company High transparency touch screen
US20050156512A1 (en) * 2003-12-30 2005-07-21 Vadim Savvateev Electroluminescent devices with at least one electrode having apertures and methods of using such devices
KR101026982B1 (ko) * 2004-06-03 2011-04-11 엘지디스플레이 주식회사 액정표시장치용 어레이 기판과 제조방법
KR100620851B1 (ko) * 2004-06-14 2006-09-19 엘지전자 주식회사 유기 전계발광 표시소자 및 그 제조방법
KR100692865B1 (ko) * 2004-10-29 2007-03-09 엘지전자 주식회사 유기 전계발광표시소자 및 그 제조방법
US7160583B2 (en) * 2004-12-03 2007-01-09 3M Innovative Properties Company Microfabrication using patterned topography and self-assembled monolayers
JP4595565B2 (ja) * 2005-01-31 2010-12-08 株式会社デンソー 自発光表示装置
US7992293B2 (en) * 2006-04-04 2011-08-09 Hanita Coatings R.C.A. Ltd Method of manufacturing a patterned conductive layer
US20090165296A1 (en) * 2006-04-04 2009-07-02 Yoash Carmi Patterns of conductive objects on a substrate and method of producing thereof
TW200818981A (en) * 2006-08-30 2008-04-16 Sumitomo Chemical Co Organic electroluminescence device
EP1978407A1 (en) * 2007-03-28 2008-10-08 CRF Societa'Consortile per Azioni Method for obtaining a transparent conductive film
EP2139616B1 (en) 2007-04-02 2018-08-29 Merck Patent GmbH Novel electrode
CN101304640B (zh) * 2007-05-09 2011-03-30 深圳富泰宏精密工业有限公司 电子产品的壳体及其制造方法
FR2917897B1 (fr) * 2007-06-25 2010-05-28 Univ Rennes Multicouche transparent et conducteur
JP5571870B2 (ja) * 2007-09-21 2014-08-13 株式会社東芝 極微細構造を有する光透過型金属電極およびその製造方法
EP2232327A1 (en) * 2007-12-14 2010-09-29 3M Innovative Properties Company Methods for making electronic devices
JP5283926B2 (ja) * 2008-02-25 2013-09-04 株式会社東芝 光透過型金属電極およびその製造方法
FR2928463B1 (fr) * 2008-03-04 2010-12-03 Saint Gobain Dispositif electrochrome comportant un maillage.
JP5319769B2 (ja) * 2008-06-30 2013-10-16 スリーエム イノベイティブ プロパティズ カンパニー パターン形成された基板の形成方法
WO2010002679A2 (en) * 2008-06-30 2010-01-07 3M Innovative Properties Company Method of forming a microstructure
FR2934417B1 (fr) 2008-07-25 2010-11-05 Centre Nat Rech Scient Composants electroniques a encapsulation integree
TWI459436B (zh) * 2008-10-27 2014-11-01 Tpk Touch Solutions Inc The Method of Making Double - sided Graphic Structure of Touch Circuit
KR101070114B1 (ko) * 2009-09-15 2011-10-05 삼성전기주식회사 디스플레이용 어레이 기판 및 디스플레이용 기판의 제조 방법
BR112013020151A2 (pt) * 2011-02-09 2016-11-08 Kinestral Technologies Inc dispositivos eletrocrômicos de multicamadas com comutação espacialmente coordenada
US10254786B2 (en) 2012-12-07 2019-04-09 3M Innovative Properties Company Method of making transparent conductors on a substrate
CN103021291B (zh) * 2012-12-27 2015-06-03 广东威创视讯科技股份有限公司 一种高像素密度led显示屏
US20160266496A1 (en) * 2015-03-10 2016-09-15 Uab Research Foundation Fabrication and encapsulation of micro-circuits on diamond and uses thereof
TWI677123B (zh) * 2018-11-29 2019-11-11 機光科技股份有限公司 去定位器及使用該去定位器的發光裝置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06148661A (ja) * 1992-11-12 1994-05-27 Matsushita Electric Ind Co Ltd 表示装置用基板の製法
JPH09230359A (ja) * 1996-02-27 1997-09-05 Matsushita Electric Ind Co Ltd 液晶素子とその製造方法

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4942437A (enExample) * 1972-04-05 1974-04-22
JPS6019608B2 (ja) * 1978-10-03 1985-05-17 シャープ株式会社 電極パタ−ン形成方法
JPH0685032B2 (ja) * 1985-10-17 1994-10-26 キヤノン株式会社 カイラルスメクティック液晶素子
JPS6365063A (ja) * 1986-09-08 1988-03-23 Ricoh Co Ltd 補助金属電極付き透明電極の形成方法
JPS6432233A (en) * 1987-07-28 1989-02-02 Sharp Kk Liquid crystal display device
US5187601A (en) * 1988-03-07 1993-02-16 Semiconductor Energy Laboratory Co., Ltd. Method for making a high contrast liquid crystal display including laser scribing opaque and transparent conductive strips simultaneously
JP2694229B2 (ja) * 1988-03-07 1997-12-24 株式会社 半導体エネルギー研究所 電気光学装置用電極の作製方法
JPH0216529A (ja) * 1988-07-05 1990-01-19 Seiko Epson Corp 透明電極の低抵抗化方法
JPH02228629A (ja) * 1989-02-28 1990-09-11 Sharp Corp 液晶表示装置
JPH03125443A (ja) * 1989-10-09 1991-05-28 Sharp Corp 実装基板の電極及び該実装基板の電極を有する液晶表示装置
JPH03245527A (ja) * 1990-02-23 1991-11-01 Rohm Co Ltd 微細加工方法
JP2652072B2 (ja) * 1990-02-26 1997-09-10 キヤノン株式会社 遮光層の形成方法
JP2601932B2 (ja) * 1990-04-13 1997-04-23 インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン 液晶表示装置およびその製造方法
US5282068A (en) * 1990-11-08 1994-01-25 Canon Kabushiki Kaisha Liquid crystal display with opaque insulating layer and metal layer at and wider than inter-electrode gap and method of manufacturing
JPH04280227A (ja) * 1991-03-07 1992-10-06 Fuji Photo Film Co Ltd 液晶表示素子の製造方法
JPH04360124A (ja) * 1991-06-07 1992-12-14 Hitachi Ltd 液晶表示素子
KR970000359B1 (ko) * 1991-09-26 1997-01-08 가부시기가이샤 도오시바 액정표시장치
US5163220A (en) * 1991-10-09 1992-11-17 The Unites States Of America As Represented By The Secretary Of The Army Method of enhancing the electrical conductivity of indium-tin-oxide electrode stripes
JP2877588B2 (ja) * 1991-10-28 1999-03-31 ローム株式会社 金属酸化物薄膜のパターン形成法
US5268782A (en) * 1992-01-16 1993-12-07 Minnesota Mining And Manufacturing Company Micro-ridged, polymeric liquid crystal display substrate and display device
JP2823178B2 (ja) * 1992-04-06 1998-11-11 シャープ株式会社 金属配線基板及びその製造方法
US5342477A (en) * 1993-07-14 1994-08-30 Micron Display Technology, Inc. Low resistance electrodes useful in flat panel displays
US5426266A (en) * 1993-11-08 1995-06-20 Planar Systems, Inc. Die bonding connector and method
TW340192B (en) * 1993-12-07 1998-09-11 Sharp Kk A display board having wiring with three-layered structure and a display device including the display board
DE69634376D1 (de) * 1995-05-12 2005-03-31 St Microelectronics Inc IC-Packungsfassungssystem mit niedrigem Profil
US5646480A (en) * 1995-06-19 1997-07-08 Northrop Grumman Corporation Metal assist structure for an electroluminescent display

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06148661A (ja) * 1992-11-12 1994-05-27 Matsushita Electric Ind Co Ltd 表示装置用基板の製法
JPH09230359A (ja) * 1996-02-27 1997-09-05 Matsushita Electric Ind Co Ltd 液晶素子とその製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101026804B1 (ko) 2004-02-20 2011-04-04 삼성전자주식회사 유기 전계 발광 표시장치의 보조전극 형성방법
JP2016530622A (ja) * 2013-07-31 2016-09-29 スリーエム イノベイティブ プロパティズ カンパニー 電子的構成要素とパターン化ナノワイヤ透明伝導体との接合

Also Published As

Publication number Publication date
AU3374099A (en) 1999-11-29
CA2331044A1 (en) 1999-11-18
WO1999059024A3 (en) 2000-01-13
US6037005A (en) 2000-03-14
EP1084445B1 (en) 2004-06-30
EP1084445A2 (en) 2001-03-21
KR20010043511A (ko) 2001-05-25
KR100614456B1 (ko) 2006-08-23
DE69918436T2 (de) 2005-07-28
DE69918436D1 (de) 2004-08-05
US6198051B1 (en) 2001-03-06
EP1469341A1 (en) 2004-10-20
WO1999059024A2 (en) 1999-11-18

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