DE69833760T2 - Schutzring zur verminderung des dunkelstroms - Google Patents

Schutzring zur verminderung des dunkelstroms Download PDF

Info

Publication number
DE69833760T2
DE69833760T2 DE69833760T DE69833760T DE69833760T2 DE 69833760 T2 DE69833760 T2 DE 69833760T2 DE 69833760 T DE69833760 T DE 69833760T DE 69833760 T DE69833760 T DE 69833760T DE 69833760 T2 DE69833760 T2 DE 69833760T2
Authority
DE
Germany
Prior art keywords
photodiode
guard ring
substrate
sti
ring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69833760T
Other languages
German (de)
English (en)
Other versions
DE69833760D1 (de
Inventor
T. Lawrence Phoenix CLARK
A. Mark Chandler BEILEY
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Intel Corp
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Publication of DE69833760D1 publication Critical patent/DE69833760D1/de
Application granted granted Critical
Publication of DE69833760T2 publication Critical patent/DE69833760T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/28—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
    • H10F30/2823—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors the devices being conductor-insulator-semiconductor devices, e.g. diodes or charge-coupled devices [CCD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
DE69833760T 1997-09-30 1998-07-06 Schutzring zur verminderung des dunkelstroms Expired - Fee Related DE69833760T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/941,800 US5859450A (en) 1997-09-30 1997-09-30 Dark current reducing guard ring
US941800 1997-09-30
PCT/US1998/014024 WO1999017380A1 (en) 1997-09-30 1998-07-06 Dark current reducing guard ring

Publications (2)

Publication Number Publication Date
DE69833760D1 DE69833760D1 (de) 2006-05-04
DE69833760T2 true DE69833760T2 (de) 2006-09-07

Family

ID=25477082

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69833760T Expired - Fee Related DE69833760T2 (de) 1997-09-30 1998-07-06 Schutzring zur verminderung des dunkelstroms

Country Status (9)

Country Link
US (1) US5859450A (enExample)
EP (1) EP1034570B1 (enExample)
JP (1) JP4309574B2 (enExample)
KR (1) KR100371457B1 (enExample)
AU (1) AU8291798A (enExample)
DE (1) DE69833760T2 (enExample)
RU (1) RU2178600C1 (enExample)
TW (1) TW441119B (enExample)
WO (1) WO1999017380A1 (enExample)

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100253372B1 (ko) 1997-12-08 2000-04-15 김영환 반도체 소자 및 그 제조방법
TW396645B (en) * 1998-06-16 2000-07-01 United Microelectronics Corp Manufacturing method of CMOS sensor devices
US6545711B1 (en) * 1998-11-02 2003-04-08 Agilent Technologies, Inc. Photo diode pixel sensor array having a guard ring
US6073343A (en) * 1998-12-22 2000-06-13 General Electric Company Method of providing a variable guard ring width between detectors on a substrate
US6147366A (en) * 1999-02-08 2000-11-14 Intel Corporation On chip CMOS optical element
US6310366B1 (en) * 1999-06-16 2001-10-30 Micron Technology, Inc. Retrograde well structure for a CMOS imager
US6445014B1 (en) * 1999-06-16 2002-09-03 Micron Technology Inc. Retrograde well structure for a CMOS imager
US6512401B2 (en) * 1999-09-10 2003-01-28 Intel Corporation Output buffer for high and low voltage bus
US7133074B1 (en) 1999-09-28 2006-11-07 Zoran Corporation Image sensor circuits including sampling circuits used therein for performing correlated double sampling
US6465862B1 (en) * 1999-10-05 2002-10-15 Brannon Harris Method and apparatus for implementing efficient CMOS photo sensors
US6194258B1 (en) 2000-01-18 2001-02-27 Taiwan Semiconductor Manufacturing Company Method of forming an image sensor cell and a CMOS logic circuit device
US6627475B1 (en) 2000-01-18 2003-09-30 Taiwan Semiconductor Manufacturing Company Buried photodiode structure for CMOS image sensor
DE10003472C1 (de) 2000-01-27 2001-04-26 Infineon Technologies Ag Zufallszahlengenerator
US6309905B1 (en) 2000-01-31 2001-10-30 Taiwan Semiconductor Manufacturing Company Stripe photodiode element with high quantum efficiency for an image sensor cell
EP1208599A1 (en) 2000-03-09 2002-05-29 Koninklijke Philips Electronics N.V. Solid state imaging sensor in a submicron technology and method of manufacturing and use of a solid state imaging sensor
US6365926B1 (en) 2000-09-20 2002-04-02 Eastman Kodak Company CMOS active pixel with scavenging diode
KR20020096336A (ko) * 2001-06-19 2002-12-31 삼성전자 주식회사 씨모스형 촬상 장치
US20030049925A1 (en) * 2001-09-10 2003-03-13 Layman Paul Arthur High-density inter-die interconnect structure
KR100454074B1 (ko) * 2001-12-26 2004-10-26 동부전자 주식회사 반도체 소자의 이미지 센서 제조 방법
US6534356B1 (en) 2002-04-09 2003-03-18 Taiwan Semiconductor Manufacturing Company Method of reducing dark current for an image sensor device via use of a polysilicon pad
AU2002354316A1 (en) * 2002-11-05 2004-06-07 Akademia Gorniczo-Hutnicza Monolithic active pixel dosimeter
US6818930B2 (en) * 2002-11-12 2004-11-16 Micron Technology, Inc. Gated isolation structure for imagers
KR100907884B1 (ko) * 2002-12-31 2009-07-15 동부일렉트로닉스 주식회사 반도체 포토 다이오드 및 이의 제조 방법
US6897082B2 (en) * 2003-06-16 2005-05-24 Micron Technology, Inc. Method of forming well for CMOS imager
KR100535924B1 (ko) * 2003-09-22 2005-12-09 동부아남반도체 주식회사 시모스 이미지 센서 및 그 제조방법
US7180049B2 (en) * 2004-11-08 2007-02-20 Taiwan Semiconductor Manufacturing Co., Ltd. Image sensor with optical guard rings and method for forming the same
US7348651B2 (en) * 2004-12-09 2008-03-25 Taiwan Semiconductor Manufacturing Co., Ltd. Pinned photodiode fabricated with shallow trench isolation
US7342268B2 (en) * 2004-12-23 2008-03-11 International Business Machines Corporation CMOS imager with Cu wiring and method of eliminating high reflectivity interfaces therefrom
US7564083B2 (en) * 2005-02-25 2009-07-21 United Microelectronics Corp. Active pixel sensor
EP1921685A4 (en) * 2005-08-31 2014-12-17 Fujitsu Semiconductor Ltd PHOTODIODE, SOLID IMAGING DEVICE, AND METHOD FOR MANUFACTURING SAME
US8259293B2 (en) * 2007-03-15 2012-09-04 Johns Hopkins University Deep submicron and nano CMOS single photon photodetector pixel with event based circuits for readout data-rate reduction communication system
US7598575B1 (en) 2007-09-12 2009-10-06 National Semiconductor Corporation Semiconductor die with reduced RF attenuation
US8188578B2 (en) * 2008-05-29 2012-05-29 Mediatek Inc. Seal ring structure for integrated circuits
US8815634B2 (en) * 2008-10-31 2014-08-26 Varian Semiconductor Equipment Associates, Inc. Dark currents and reducing defects in image sensors and photovoltaic junctions
US8138531B2 (en) * 2009-09-17 2012-03-20 International Business Machines Corporation Structures, design structures and methods of fabricating global shutter pixel sensor cells
US9171726B2 (en) * 2009-11-06 2015-10-27 Infineon Technologies Ag Low noise semiconductor devices
JP5631668B2 (ja) * 2010-09-02 2014-11-26 Ｎｔｔエレクトロニクス株式会社 アバランシ・フォトダイオード
KR101804268B1 (ko) 2010-11-02 2018-01-11 삼성전자주식회사 후면수광 이미지 센서에서 노이즈 차단을 위한 깊은 가드링 구조 및 잡음방지영역을 갖는 이미지센서 및 그 제조방법
RU2497319C1 (ru) * 2012-02-28 2013-10-27 Федеральное государственное автономное образовательное учреждение высшего профессионального образования "Национальный исследовательский университет "Высшая школа экономики" Печатная плата для бортовой радиоэлектронной аппаратуры космических аппаратов
KR102678796B1 (ko) * 2023-01-13 2024-06-26 주식회사 트루픽셀 단일 광자 검출기, 전자 장치, 및 라이다 장치

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS526097A (en) * 1975-07-03 1977-01-18 Moririka:Kk Planar type photodiode
US4096622A (en) * 1975-07-31 1978-06-27 General Motors Corporation Ion implanted Schottky barrier diode
US4137109A (en) * 1976-04-12 1979-01-30 Texas Instruments Incorporated Selective diffusion and etching method for isolation of integrated logic circuit
US4261095A (en) * 1978-12-11 1981-04-14 International Business Machines Corporation Self aligned schottky guard ring
US4414737A (en) * 1981-01-30 1983-11-15 Tokyo Shibaura Denki Kabushiki Kaisha Production of Schottky barrier diode
US4691435A (en) * 1981-05-13 1987-09-08 International Business Machines Corporation Method for making Schottky diode having limited area self-aligned guard ring
JPS58115873A (ja) * 1981-12-28 1983-07-09 Fujitsu Ltd 半導体受光素子
US4507853A (en) * 1982-08-23 1985-04-02 Texas Instruments Incorporated Metallization process for integrated circuits
US4549914A (en) * 1984-04-09 1985-10-29 At&T Bell Laboratories Integrated circuit contact technique
JPS6191973A (ja) * 1984-10-11 1986-05-10 Kanegafuchi Chem Ind Co Ltd 耐熱性薄膜光電変換素子およびその製法
US4656732A (en) * 1984-09-26 1987-04-14 Texas Instruments Incorporated Integrated circuit fabrication process
US4722910A (en) * 1986-05-27 1988-02-02 Analog Devices, Inc. Partially self-aligned metal contact process
US5221856A (en) * 1989-04-05 1993-06-22 U.S. Philips Corp. Bipolar transistor with floating guard region under extrinsic base
JPH036860A (ja) * 1989-06-02 1991-01-14 Nec Corp 固体撮像素子
JP2661341B2 (ja) * 1990-07-24 1997-10-08 三菱電機株式会社 半導体受光素子
JPH0582823A (ja) * 1991-09-20 1993-04-02 Sharp Corp フオトトランジスタ
JPH0677452A (ja) * 1992-06-26 1994-03-18 Nikon Corp 固体撮像装置
RU2071146C1 (ru) * 1992-10-27 1996-12-27 Воронежское высшее военное авиационное инженерное училище Интегральная схема
US5438217A (en) * 1994-04-29 1995-08-01 General Electric Company Planar avalanche photodiode array with sidewall segment
US5614744A (en) * 1995-08-04 1997-03-25 National Semiconductor Corporation CMOS-based, low leakage active pixel array with anti-blooming isolation
US5841158A (en) * 1996-03-01 1998-11-24 Foveonics, Inc. Low-stress photodiode with reduced junction leakage
JPH09321332A (ja) * 1996-05-31 1997-12-12 Oki Electric Ind Co Ltd 半導体受光素子の製造方法
JP2996943B2 (ja) * 1998-03-09 2000-01-11 株式会社東芝 半導体受光装置及びその製造方法

Also Published As

Publication number Publication date
KR100371457B1 (ko) 2003-02-07
RU2178600C1 (ru) 2002-01-20
DE69833760D1 (de) 2006-05-04
WO1999017380A1 (en) 1999-04-08
HK1029439A1 (en) 2001-03-30
JP2001518719A (ja) 2001-10-16
EP1034570A1 (en) 2000-09-13
EP1034570A4 (en) 2002-09-25
US5859450A (en) 1999-01-12
TW441119B (en) 2001-06-16
AU8291798A (en) 1999-04-23
KR20010030818A (ko) 2001-04-16
EP1034570B1 (en) 2006-03-08
JP4309574B2 (ja) 2009-08-05

Similar Documents

Publication Publication Date Title
DE69833760T2 (de) Schutzring zur verminderung des dunkelstroms
DE102018122392B4 (de) SPAD-Bildsensor und Herstellungsverfahren
DE102018130470B4 (de) Pixelvorrichtung auf struktur tiefer grabenisolierung (dti) für bildsensor
DE19908457B4 (de) CMOS-Bildsensor und Photodiode und Verfahren zur Herstellung
DE102016100013B4 (de) Zusätzlicher dotierter Bereich für rückseitige tiefe Grabenisolation
DE102006060253B4 (de) Halbleiterbauelement mit Photodiode und Verfahren zu dessen Herstellung
US6649951B2 (en) Light-receiving element and photoelectric conversion device
DE10160501A1 (de) Festkörper-Bildverarbeitungseinrichtung
DE102007060836A1 (de) CMOS-Bildsensor und Verfahren zu dessen Herstellung
DE102004063037A1 (de) CMOS-Bildsensor und Verfahren zu dessen Herstellung
DE112018005850T5 (de) Lichtdetektionselement und herstellungsverfahren für selbiges
DE102008046030A1 (de) Bildsensor und Verfahren zu seiner Herstellung
DE102008046036A1 (de) Bildsensor und Verfahren zu seiner Herstellung
DE102012206089A1 (de) Halbleiterstruktur, verfahren zum betreiben derselben und herstellungsverfahren
DE102008046260A1 (de) Bildsensor und Verfahren zu dessen Herstellung
DE102010043822A1 (de) Fotodiode und Fotodiodenfeld
DE102005062750B4 (de) Verfahren zur Herstellung eines CMOS-Bildsensors
DE102009043255A1 (de) Bildsensor und Verfahren zu seiner Herstellung
DE102008051449A1 (de) Bildsensor und Verfahren zu dessen Herstellung
DE4234499A1 (de) Verfahren zum herstellen eines ccd bildsensors
DE102008046253A1 (de) Verfahren zur Herstellung des Bildsensors
DE102018122505A1 (de) Rückseitige Tiefgrabenisolier- (BDTI) Struktur für Bildsensor mit Pinned-Photodiode
EP1208598B1 (de) Bildzelle, bildsensor und herstellungsverfahren hierfür
DE102022105322B4 (de) Grabenlose einzelphoton-avalanche-dioden
DE102006061032B4 (de) Verfahren zur Herstellung eines CMOS-Bildsensors

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Representative=s name: HEYER, V., DIPL.-PHYS. DR.RER.NAT., PAT.-ANW., 806

8339 Ceased/non-payment of the annual fee