RU2178600C1 - Защитное кольцо для снижения темнового тока - Google Patents

Защитное кольцо для снижения темнового тока Download PDF

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Publication number
RU2178600C1
RU2178600C1 RU2000111514/28A RU2000111514A RU2178600C1 RU 2178600 C1 RU2178600 C1 RU 2178600C1 RU 2000111514/28 A RU2000111514/28 A RU 2000111514/28A RU 2000111514 A RU2000111514 A RU 2000111514A RU 2178600 C1 RU2178600 C1 RU 2178600C1
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Russia
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region
substrate
pocket
photodiode
conductivity
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RU2000111514/28A
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English (en)
Russian (ru)
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RU2000111514A (ru
Inventor
Лоуренс Т. КЛАРК
Марк А. БЕЙЛИ
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Интел Корпорейшн
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Publication of RU2000111514A publication Critical patent/RU2000111514A/ru

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/28—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
    • H10F30/2823—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors the devices being conductor-insulator-semiconductor devices, e.g. diodes or charge-coupled devices [CCD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures

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  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
RU2000111514/28A 1997-09-30 1998-07-06 Защитное кольцо для снижения темнового тока RU2178600C1 (ru)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/941,800 1997-09-30
US08/941,800 US5859450A (en) 1997-09-30 1997-09-30 Dark current reducing guard ring

Publications (2)

Publication Number Publication Date
RU2178600C1 true RU2178600C1 (ru) 2002-01-20
RU2000111514A RU2000111514A (ru) 2004-05-10

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Application Number Title Priority Date Filing Date
RU2000111514/28A RU2178600C1 (ru) 1997-09-30 1998-07-06 Защитное кольцо для снижения темнового тока

Country Status (9)

Country Link
US (1) US5859450A (enExample)
EP (1) EP1034570B1 (enExample)
JP (1) JP4309574B2 (enExample)
KR (1) KR100371457B1 (enExample)
AU (1) AU8291798A (enExample)
DE (1) DE69833760T2 (enExample)
RU (1) RU2178600C1 (enExample)
TW (1) TW441119B (enExample)
WO (1) WO1999017380A1 (enExample)

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US6627475B1 (en) 2000-01-18 2003-09-30 Taiwan Semiconductor Manufacturing Company Buried photodiode structure for CMOS image sensor
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US6309905B1 (en) 2000-01-31 2001-10-30 Taiwan Semiconductor Manufacturing Company Stripe photodiode element with high quantum efficiency for an image sensor cell
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KR20020096336A (ko) * 2001-06-19 2002-12-31 삼성전자 주식회사 씨모스형 촬상 장치
US20030049925A1 (en) * 2001-09-10 2003-03-13 Layman Paul Arthur High-density inter-die interconnect structure
KR100454074B1 (ko) * 2001-12-26 2004-10-26 동부전자 주식회사 반도체 소자의 이미지 센서 제조 방법
US6534356B1 (en) 2002-04-09 2003-03-18 Taiwan Semiconductor Manufacturing Company Method of reducing dark current for an image sensor device via use of a polysilicon pad
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US6818930B2 (en) * 2002-11-12 2004-11-16 Micron Technology, Inc. Gated isolation structure for imagers
KR100907884B1 (ko) * 2002-12-31 2009-07-15 동부일렉트로닉스 주식회사 반도체 포토 다이오드 및 이의 제조 방법
US6897082B2 (en) * 2003-06-16 2005-05-24 Micron Technology, Inc. Method of forming well for CMOS imager
KR100535924B1 (ko) * 2003-09-22 2005-12-09 동부아남반도체 주식회사 시모스 이미지 센서 및 그 제조방법
US7180049B2 (en) * 2004-11-08 2007-02-20 Taiwan Semiconductor Manufacturing Co., Ltd. Image sensor with optical guard rings and method for forming the same
US7348651B2 (en) * 2004-12-09 2008-03-25 Taiwan Semiconductor Manufacturing Co., Ltd. Pinned photodiode fabricated with shallow trench isolation
US7342268B2 (en) * 2004-12-23 2008-03-11 International Business Machines Corporation CMOS imager with Cu wiring and method of eliminating high reflectivity interfaces therefrom
US7564083B2 (en) * 2005-02-25 2009-07-21 United Microelectronics Corp. Active pixel sensor
EP1921685A4 (en) * 2005-08-31 2014-12-17 Fujitsu Semiconductor Ltd PHOTODIODE, SOLID IMAGING DEVICE, AND METHOD FOR MANUFACTURING SAME
US8259293B2 (en) * 2007-03-15 2012-09-04 Johns Hopkins University Deep submicron and nano CMOS single photon photodetector pixel with event based circuits for readout data-rate reduction communication system
US7598575B1 (en) 2007-09-12 2009-10-06 National Semiconductor Corporation Semiconductor die with reduced RF attenuation
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KR101804268B1 (ko) 2010-11-02 2018-01-11 삼성전자주식회사 후면수광 이미지 센서에서 노이즈 차단을 위한 깊은 가드링 구조 및 잡음방지영역을 갖는 이미지센서 및 그 제조방법
KR102678796B1 (ko) * 2023-01-13 2024-06-26 주식회사 트루픽셀 단일 광자 검출기, 전자 장치, 및 라이다 장치

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RU2071146C1 (ru) * 1992-10-27 1996-12-27 Воронежское высшее военное авиационное инженерное училище Интегральная схема

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Also Published As

Publication number Publication date
KR100371457B1 (ko) 2003-02-07
DE69833760D1 (de) 2006-05-04
WO1999017380A1 (en) 1999-04-08
HK1029439A1 (en) 2001-03-30
DE69833760T2 (de) 2006-09-07
JP2001518719A (ja) 2001-10-16
EP1034570A1 (en) 2000-09-13
EP1034570A4 (en) 2002-09-25
US5859450A (en) 1999-01-12
TW441119B (en) 2001-06-16
AU8291798A (en) 1999-04-23
KR20010030818A (ko) 2001-04-16
EP1034570B1 (en) 2006-03-08
JP4309574B2 (ja) 2009-08-05

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Effective date: 20100707