JP4309574B2 - フォトダイオードおよびセンサ・アレイ - Google Patents

フォトダイオードおよびセンサ・アレイ Download PDF

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Publication number
JP4309574B2
JP4309574B2 JP2000514343A JP2000514343A JP4309574B2 JP 4309574 B2 JP4309574 B2 JP 4309574B2 JP 2000514343 A JP2000514343 A JP 2000514343A JP 2000514343 A JP2000514343 A JP 2000514343A JP 4309574 B2 JP4309574 B2 JP 4309574B2
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Japan
Prior art keywords
photodiode
region
guard ring
sti
sensor array
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Expired - Fee Related
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JP2000514343A
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English (en)
Japanese (ja)
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JP2001518719A (ja
JP2001518719A5 (enExample
Inventor
クラーク，ローレンス・ティ
ベイリー，マーク・エイ
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Intel Corp
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Intel Corp
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Publication of JP2001518719A publication Critical patent/JP2001518719A/ja
Publication of JP2001518719A5 publication Critical patent/JP2001518719A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/28—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
    • H10F30/2823—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors the devices being conductor-insulator-semiconductor devices, e.g. diodes or charge-coupled devices [CCD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures

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  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
JP2000514343A 1997-09-30 1998-07-06 フォトダイオードおよびセンサ・アレイ Expired - Fee Related JP4309574B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/941,800 1997-09-30
US08/941,800 US5859450A (en) 1997-09-30 1997-09-30 Dark current reducing guard ring
PCT/US1998/014024 WO1999017380A1 (en) 1997-09-30 1998-07-06 Dark current reducing guard ring

Publications (3)

Publication Number Publication Date
JP2001518719A JP2001518719A (ja) 2001-10-16
JP2001518719A5 JP2001518719A5 (enExample) 2006-01-05
JP4309574B2 true JP4309574B2 (ja) 2009-08-05

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000514343A Expired - Fee Related JP4309574B2 (ja) 1997-09-30 1998-07-06 フォトダイオードおよびセンサ・アレイ

Country Status (9)

Country Link
US (1) US5859450A (enExample)
EP (1) EP1034570B1 (enExample)
JP (1) JP4309574B2 (enExample)
KR (1) KR100371457B1 (enExample)
AU (1) AU8291798A (enExample)
DE (1) DE69833760T2 (enExample)
RU (1) RU2178600C1 (enExample)
TW (1) TW441119B (enExample)
WO (1) WO1999017380A1 (enExample)

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US6147366A (en) * 1999-02-08 2000-11-14 Intel Corporation On chip CMOS optical element
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US6445014B1 (en) * 1999-06-16 2002-09-03 Micron Technology Inc. Retrograde well structure for a CMOS imager
US6512401B2 (en) * 1999-09-10 2003-01-28 Intel Corporation Output buffer for high and low voltage bus
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US6465862B1 (en) * 1999-10-05 2002-10-15 Brannon Harris Method and apparatus for implementing efficient CMOS photo sensors
US6194258B1 (en) 2000-01-18 2001-02-27 Taiwan Semiconductor Manufacturing Company Method of forming an image sensor cell and a CMOS logic circuit device
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US6309905B1 (en) 2000-01-31 2001-10-30 Taiwan Semiconductor Manufacturing Company Stripe photodiode element with high quantum efficiency for an image sensor cell
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US6365926B1 (en) 2000-09-20 2002-04-02 Eastman Kodak Company CMOS active pixel with scavenging diode
KR20020096336A (ko) * 2001-06-19 2002-12-31 삼성전자 주식회사 씨모스형 촬상 장치
US20030049925A1 (en) * 2001-09-10 2003-03-13 Layman Paul Arthur High-density inter-die interconnect structure
KR100454074B1 (ko) * 2001-12-26 2004-10-26 동부전자 주식회사 반도체 소자의 이미지 센서 제조 방법
US6534356B1 (en) 2002-04-09 2003-03-18 Taiwan Semiconductor Manufacturing Company Method of reducing dark current for an image sensor device via use of a polysilicon pad
AU2002354316A1 (en) * 2002-11-05 2004-06-07 Akademia Gorniczo-Hutnicza Monolithic active pixel dosimeter
US6818930B2 (en) * 2002-11-12 2004-11-16 Micron Technology, Inc. Gated isolation structure for imagers
KR100907884B1 (ko) * 2002-12-31 2009-07-15 동부일렉트로닉스 주식회사 반도체 포토 다이오드 및 이의 제조 방법
US6897082B2 (en) * 2003-06-16 2005-05-24 Micron Technology, Inc. Method of forming well for CMOS imager
KR100535924B1 (ko) * 2003-09-22 2005-12-09 동부아남반도체 주식회사 시모스 이미지 센서 및 그 제조방법
US7180049B2 (en) * 2004-11-08 2007-02-20 Taiwan Semiconductor Manufacturing Co., Ltd. Image sensor with optical guard rings and method for forming the same
US7348651B2 (en) * 2004-12-09 2008-03-25 Taiwan Semiconductor Manufacturing Co., Ltd. Pinned photodiode fabricated with shallow trench isolation
US7342268B2 (en) * 2004-12-23 2008-03-11 International Business Machines Corporation CMOS imager with Cu wiring and method of eliminating high reflectivity interfaces therefrom
US7564083B2 (en) * 2005-02-25 2009-07-21 United Microelectronics Corp. Active pixel sensor
EP1921685A4 (en) * 2005-08-31 2014-12-17 Fujitsu Semiconductor Ltd PHOTODIODE, SOLID IMAGING DEVICE, AND METHOD FOR MANUFACTURING SAME
US8259293B2 (en) * 2007-03-15 2012-09-04 Johns Hopkins University Deep submicron and nano CMOS single photon photodetector pixel with event based circuits for readout data-rate reduction communication system
US7598575B1 (en) 2007-09-12 2009-10-06 National Semiconductor Corporation Semiconductor die with reduced RF attenuation
US8188578B2 (en) * 2008-05-29 2012-05-29 Mediatek Inc. Seal ring structure for integrated circuits
US8815634B2 (en) * 2008-10-31 2014-08-26 Varian Semiconductor Equipment Associates, Inc. Dark currents and reducing defects in image sensors and photovoltaic junctions
US8138531B2 (en) * 2009-09-17 2012-03-20 International Business Machines Corporation Structures, design structures and methods of fabricating global shutter pixel sensor cells
US9171726B2 (en) * 2009-11-06 2015-10-27 Infineon Technologies Ag Low noise semiconductor devices
JP5631668B2 (ja) * 2010-09-02 2014-11-26 Ｎｔｔエレクトロニクス株式会社 アバランシ・フォトダイオード
KR101804268B1 (ko) 2010-11-02 2018-01-11 삼성전자주식회사 후면수광 이미지 센서에서 노이즈 차단을 위한 깊은 가드링 구조 및 잡음방지영역을 갖는 이미지센서 및 그 제조방법
RU2497319C1 (ru) * 2012-02-28 2013-10-27 Федеральное государственное автономное образовательное учреждение высшего профессионального образования "Национальный исследовательский университет "Высшая школа экономики" Печатная плата для бортовой радиоэлектронной аппаратуры космических аппаратов
KR102678796B1 (ko) * 2023-01-13 2024-06-26 주식회사 트루픽셀 단일 광자 검출기, 전자 장치, 및 라이다 장치

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Also Published As

Publication number Publication date
KR100371457B1 (ko) 2003-02-07
RU2178600C1 (ru) 2002-01-20
DE69833760D1 (de) 2006-05-04
WO1999017380A1 (en) 1999-04-08
HK1029439A1 (en) 2001-03-30
DE69833760T2 (de) 2006-09-07
JP2001518719A (ja) 2001-10-16
EP1034570A1 (en) 2000-09-13
EP1034570A4 (en) 2002-09-25
US5859450A (en) 1999-01-12
TW441119B (en) 2001-06-16
AU8291798A (en) 1999-04-23
KR20010030818A (ko) 2001-04-16
EP1034570B1 (en) 2006-03-08

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