DE69825511D1 - Herstellungsverfahren für Schichtstruktur aus Polysilizium und Wolframsilizid - Google Patents
Herstellungsverfahren für Schichtstruktur aus Polysilizium und WolframsilizidInfo
- Publication number
- DE69825511D1 DE69825511D1 DE69825511T DE69825511T DE69825511D1 DE 69825511 D1 DE69825511 D1 DE 69825511D1 DE 69825511 T DE69825511 T DE 69825511T DE 69825511 T DE69825511 T DE 69825511T DE 69825511 D1 DE69825511 D1 DE 69825511D1
- Authority
- DE
- Germany
- Prior art keywords
- polysilicon
- manufacturing process
- layer structure
- tungsten silicide
- silicide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title 1
- 229920005591 polysilicon Polymers 0.000 title 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 title 1
- 229910021342 tungsten silicide Inorganic materials 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
- H01L29/4925—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement
- H01L29/4933—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement with a silicide layer contacting the silicon layer, e.g. Polycide gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
- H01L21/28044—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer
- H01L21/28061—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer the conductor comprising a metal or metal silicide formed by deposition, e.g. sputter deposition, i.e. without a silicidation reaction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
- H01L21/76889—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances by forming silicides of refractory metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP05699497A JP3635843B2 (ja) | 1997-02-25 | 1997-02-25 | 膜積層構造及びその形成方法 |
JP5699497 | 1997-02-25 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69825511D1 true DE69825511D1 (de) | 2004-09-16 |
DE69825511T2 DE69825511T2 (de) | 2005-08-04 |
Family
ID=13043053
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69825511T Expired - Fee Related DE69825511T2 (de) | 1997-02-25 | 1998-02-25 | Herstellungsverfahren für Schichtstruktur aus Polysilizium und Wolframsilizid |
Country Status (6)
Country | Link |
---|---|
US (2) | US6404021B1 (de) |
EP (2) | EP0860863B1 (de) |
JP (1) | JP3635843B2 (de) |
KR (1) | KR100466152B1 (de) |
DE (1) | DE69825511T2 (de) |
TW (1) | TW410388B (de) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7829144B2 (en) * | 1997-11-05 | 2010-11-09 | Tokyo Electron Limited | Method of forming a metal film for electrode |
US6130145A (en) * | 1998-01-21 | 2000-10-10 | Siemens Aktiengesellschaft | Insitu doped metal policide |
JPH11238697A (ja) * | 1998-02-23 | 1999-08-31 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
JPH11307765A (ja) * | 1998-04-20 | 1999-11-05 | Nec Corp | 半導体装置及びその製造方法 |
JP2000150416A (ja) * | 1998-09-01 | 2000-05-30 | Tokyo Electron Ltd | タングステンシリサイド膜及びその成膜方法 |
JP3437111B2 (ja) * | 1999-02-15 | 2003-08-18 | 松下電器産業株式会社 | 半導体装置の製造方法 |
JP2000277447A (ja) | 1999-03-24 | 2000-10-06 | Tokyo Electron Ltd | 薄膜の熱処理方法 |
KR100379107B1 (ko) * | 2001-03-21 | 2003-04-07 | 삼성전자주식회사 | 반도체 장치에서 폴리사이드 구조물의 형성 방법 |
KR100447031B1 (ko) | 2001-03-23 | 2004-09-07 | 삼성전자주식회사 | 텅스텐 실리사이드막의 형성방법 |
US6686637B1 (en) * | 2002-11-21 | 2004-02-03 | International Business Machines Corporation | Gate structure with independently tailored vertical doping profile |
JP2005353975A (ja) * | 2004-06-14 | 2005-12-22 | Oki Electric Ind Co Ltd | 半導体装置、及びその製造方法 |
JP6102140B2 (ja) * | 2012-09-20 | 2017-03-29 | 三菱電機株式会社 | 半導体装置 |
Family Cites Families (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6127627A (ja) | 1984-07-18 | 1986-02-07 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
JPS6476759A (en) | 1987-09-17 | 1989-03-22 | Seiko Instr & Electronics | Tungsten silicide film and manufacture thereof |
JPH0212835A (ja) * | 1988-06-30 | 1990-01-17 | Toshiba Corp | 半導体装置およびその製造方法 |
JPH0239471A (ja) | 1988-07-28 | 1990-02-08 | Fujitsu Ltd | Mos電界効果トランジスタと導電体構造 |
JPH02155273A (ja) | 1988-12-07 | 1990-06-14 | Nec Corp | Mos電界効果トランジスタ |
JPH02181918A (ja) | 1989-01-09 | 1990-07-16 | Matsushita Electron Corp | 半導体装置の製造方法 |
US4992391A (en) | 1989-11-29 | 1991-02-12 | Advanced Micro Devices, Inc. | Process for fabricating a control gate for a floating gate FET |
JP2558931B2 (ja) | 1990-07-13 | 1996-11-27 | 株式会社東芝 | 半導体装置およびその製造方法 |
US5168072A (en) * | 1990-10-12 | 1992-12-01 | Texas Instruments Incorporated | Method of fabricating an high-performance insulated-gate field-effect transistor |
JPH05315333A (ja) | 1991-04-22 | 1993-11-26 | Toshiba Corp | 半導体装置の製造方法 |
JPH04354118A (ja) | 1991-05-31 | 1992-12-08 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
US5355010A (en) * | 1991-06-21 | 1994-10-11 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device with a dual type polycide layer comprising a uniformly p-type doped silicide |
US5147820A (en) | 1991-08-26 | 1992-09-15 | At&T Bell Laboratories | Silicide formation on polysilicon |
US5428244A (en) | 1992-06-29 | 1995-06-27 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device having a silicon rich dielectric layer |
JPH06305409A (ja) | 1993-04-23 | 1994-11-01 | Jidosha Kiki Co Ltd | マスタシリンダ |
JPH07297400A (ja) | 1994-03-01 | 1995-11-10 | Hitachi Ltd | 半導体集積回路装置の製造方法およびそれにより得られた半導体集積回路装置 |
KR0161398B1 (ko) * | 1995-03-13 | 1998-12-01 | 김광호 | 고내압 트랜지스터 및 그 제조방법 |
EP0746027A3 (de) | 1995-05-03 | 1998-04-01 | Applied Materials, Inc. | Auf einer integrierten Schaltung hergestellter Polysilizium/Wolframsilizid-Mehrschichtverbund und verbessertes Herstellungsverfahren |
JPH0917705A (ja) | 1995-06-28 | 1997-01-17 | Tokyo Electron Ltd | 連続熱処理方法 |
JPH0992728A (ja) * | 1995-09-21 | 1997-04-04 | Mitsubishi Electric Corp | 相補型mos電界効果トランジスタおよびその製造方法 |
US5849629A (en) * | 1995-10-31 | 1998-12-15 | International Business Machines Corporation | Method of forming a low stress polycide conductors on a semiconductor chip |
US5710454A (en) * | 1996-04-29 | 1998-01-20 | Vanguard International Semiconductor Corporation | Tungsten silicide polycide gate electrode formed through stacked amorphous silicon (SAS) multi-layer structure. |
US5767558A (en) * | 1996-05-10 | 1998-06-16 | Integrated Device Technology, Inc. | Structures for preventing gate oxide degradation |
US5923999A (en) * | 1996-10-29 | 1999-07-13 | International Business Machines Corporation | Method of controlling dopant diffusion and metal contamination in thin polycide gate conductor of mosfet device |
US6335280B1 (en) * | 1997-01-13 | 2002-01-01 | Asm America, Inc. | Tungsten silicide deposition process |
US6001681A (en) * | 1999-01-19 | 1999-12-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method to reduce the depth of a buried contact trench by using a thin split polysilicon thickness |
-
1997
- 1997-02-25 JP JP05699497A patent/JP3635843B2/ja not_active Expired - Fee Related
-
1998
- 1998-02-13 US US09/023,712 patent/US6404021B1/en not_active Expired - Fee Related
- 1998-02-24 TW TW087102636A patent/TW410388B/zh not_active IP Right Cessation
- 1998-02-24 KR KR10-1998-0005741A patent/KR100466152B1/ko not_active IP Right Cessation
- 1998-02-25 DE DE69825511T patent/DE69825511T2/de not_active Expired - Fee Related
- 1998-02-25 EP EP98103273A patent/EP0860863B1/de not_active Expired - Lifetime
- 1998-02-25 EP EP04015519A patent/EP1463098A3/de not_active Withdrawn
-
2002
- 2002-01-11 US US10/042,148 patent/US6489208B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR19980071647A (ko) | 1998-10-26 |
EP0860863A2 (de) | 1998-08-26 |
EP1463098A3 (de) | 2005-02-02 |
DE69825511T2 (de) | 2005-08-04 |
JP3635843B2 (ja) | 2005-04-06 |
EP0860863A3 (de) | 1998-10-21 |
EP0860863B1 (de) | 2004-08-11 |
US6404021B1 (en) | 2002-06-11 |
US20020058384A1 (en) | 2002-05-16 |
EP1463098A2 (de) | 2004-09-29 |
JPH10242076A (ja) | 1998-09-11 |
US6489208B2 (en) | 2002-12-03 |
KR100466152B1 (ko) | 2005-03-16 |
TW410388B (en) | 2000-11-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |