JPS6476759A - Tungsten silicide film and manufacture thereof - Google Patents
Tungsten silicide film and manufacture thereofInfo
- Publication number
- JPS6476759A JPS6476759A JP23342687A JP23342687A JPS6476759A JP S6476759 A JPS6476759 A JP S6476759A JP 23342687 A JP23342687 A JP 23342687A JP 23342687 A JP23342687 A JP 23342687A JP S6476759 A JPS6476759 A JP S6476759A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- tungsten silicide
- type impurity
- doped
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Silicon Compounds (AREA)
Abstract
PURPOSE:To improve the fluctuation of electric characteristics and the reliability, and obtain the gettering effect of movable ion, in the case of employment for a polycide electrode used as a gate electrode, by making tungsten silicide include impurity such as P, As, and B. CONSTITUTION:After a wafer 3 mounted on a susceptor 2 is heated at a desired temperature by using a lamp heater 4, SiN2Cl2 gas and WF6 gas are introduced into a chamber 1, while the inside of the chamber is exhausted, and WSix is stacked on the wafer 3. When N-type impurity is doped in this tungsten silicide, a gas containing N-type impurity, such as phosphine gas, arsine gas and stibine gas, is introduced together with SiH2Cl2 gas and WF6 gas. When P-type impurity is doped in the tungsten silicide, a gas like diborane gas is introduced together with SiH2Clambda2 gas and WF6 gas. Thereby, obtaining tungsten silicide containing boron.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23342687A JPS6476759A (en) | 1987-09-17 | 1987-09-17 | Tungsten silicide film and manufacture thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23342687A JPS6476759A (en) | 1987-09-17 | 1987-09-17 | Tungsten silicide film and manufacture thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6476759A true JPS6476759A (en) | 1989-03-22 |
Family
ID=16954867
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP23342687A Pending JPS6476759A (en) | 1987-09-17 | 1987-09-17 | Tungsten silicide film and manufacture thereof |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6476759A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02272727A (en) * | 1989-04-14 | 1990-11-07 | Fujitsu Ltd | Wiring formation method |
US6404021B1 (en) | 1997-02-25 | 2002-06-11 | Tokyo Electron Limited | Laminated structure and a method of forming the same |
KR100430473B1 (en) * | 2001-02-06 | 2004-05-10 | 삼성전자주식회사 | Method for depositing tungsten silicide |
KR100571356B1 (en) * | 1998-01-21 | 2006-04-17 | 지멘스 악티엔게젤샤프트 | Transistors with polysilicon-silicide gates and methods of manufacturing the same |
JP2009218610A (en) * | 2009-05-15 | 2009-09-24 | Renesas Technology Corp | Semiconductor device |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5972132A (en) * | 1982-10-19 | 1984-04-24 | Toshiba Corp | Forming method for metal and metallic silicide film |
JPS6127627A (en) * | 1984-07-18 | 1986-02-07 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
-
1987
- 1987-09-17 JP JP23342687A patent/JPS6476759A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5972132A (en) * | 1982-10-19 | 1984-04-24 | Toshiba Corp | Forming method for metal and metallic silicide film |
JPS6127627A (en) * | 1984-07-18 | 1986-02-07 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02272727A (en) * | 1989-04-14 | 1990-11-07 | Fujitsu Ltd | Wiring formation method |
US6404021B1 (en) | 1997-02-25 | 2002-06-11 | Tokyo Electron Limited | Laminated structure and a method of forming the same |
US6489208B2 (en) | 1997-02-25 | 2002-12-03 | Tokyo Electron Limited | Method of forming a laminated structure to enhance metal silicide adhesion on polycrystalline silicon |
KR100571356B1 (en) * | 1998-01-21 | 2006-04-17 | 지멘스 악티엔게젤샤프트 | Transistors with polysilicon-silicide gates and methods of manufacturing the same |
KR100430473B1 (en) * | 2001-02-06 | 2004-05-10 | 삼성전자주식회사 | Method for depositing tungsten silicide |
JP2009218610A (en) * | 2009-05-15 | 2009-09-24 | Renesas Technology Corp | Semiconductor device |
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