JPS6476759A - Tungsten silicide film and manufacture thereof - Google Patents

Tungsten silicide film and manufacture thereof

Info

Publication number
JPS6476759A
JPS6476759A JP23342687A JP23342687A JPS6476759A JP S6476759 A JPS6476759 A JP S6476759A JP 23342687 A JP23342687 A JP 23342687A JP 23342687 A JP23342687 A JP 23342687A JP S6476759 A JPS6476759 A JP S6476759A
Authority
JP
Japan
Prior art keywords
gas
tungsten silicide
type impurity
doped
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23342687A
Other languages
Japanese (ja)
Inventor
Takashi Hosaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Priority to JP23342687A priority Critical patent/JPS6476759A/en
Publication of JPS6476759A publication Critical patent/JPS6476759A/en
Pending legal-status Critical Current

Links

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  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Silicon Compounds (AREA)

Abstract

PURPOSE:To improve the fluctuation of electric characteristics and the reliability, and obtain the gettering effect of movable ion, in the case of employment for a polycide electrode used as a gate electrode, by making tungsten silicide include impurity such as P, As, and B. CONSTITUTION:After a wafer 3 mounted on a susceptor 2 is heated at a desired temperature by using a lamp heater 4, SiN2Cl2 gas and WF6 gas are introduced into a chamber 1, while the inside of the chamber is exhausted, and WSix is stacked on the wafer 3. When N-type impurity is doped in this tungsten silicide, a gas containing N-type impurity, such as phosphine gas, arsine gas and stibine gas, is introduced together with SiH2Cl2 gas and WF6 gas. When P-type impurity is doped in the tungsten silicide, a gas like diborane gas is introduced together with SiH2Clambda2 gas and WF6 gas. Thereby, obtaining tungsten silicide containing boron.
JP23342687A 1987-09-17 1987-09-17 Tungsten silicide film and manufacture thereof Pending JPS6476759A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23342687A JPS6476759A (en) 1987-09-17 1987-09-17 Tungsten silicide film and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23342687A JPS6476759A (en) 1987-09-17 1987-09-17 Tungsten silicide film and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS6476759A true JPS6476759A (en) 1989-03-22

Family

ID=16954867

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23342687A Pending JPS6476759A (en) 1987-09-17 1987-09-17 Tungsten silicide film and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS6476759A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02272727A (en) * 1989-04-14 1990-11-07 Fujitsu Ltd Wiring formation method
US6404021B1 (en) 1997-02-25 2002-06-11 Tokyo Electron Limited Laminated structure and a method of forming the same
KR100430473B1 (en) * 2001-02-06 2004-05-10 삼성전자주식회사 Method for depositing tungsten silicide
KR100571356B1 (en) * 1998-01-21 2006-04-17 지멘스 악티엔게젤샤프트 Transistors with polysilicon-silicide gates and methods of manufacturing the same
JP2009218610A (en) * 2009-05-15 2009-09-24 Renesas Technology Corp Semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5972132A (en) * 1982-10-19 1984-04-24 Toshiba Corp Forming method for metal and metallic silicide film
JPS6127627A (en) * 1984-07-18 1986-02-07 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5972132A (en) * 1982-10-19 1984-04-24 Toshiba Corp Forming method for metal and metallic silicide film
JPS6127627A (en) * 1984-07-18 1986-02-07 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02272727A (en) * 1989-04-14 1990-11-07 Fujitsu Ltd Wiring formation method
US6404021B1 (en) 1997-02-25 2002-06-11 Tokyo Electron Limited Laminated structure and a method of forming the same
US6489208B2 (en) 1997-02-25 2002-12-03 Tokyo Electron Limited Method of forming a laminated structure to enhance metal silicide adhesion on polycrystalline silicon
KR100571356B1 (en) * 1998-01-21 2006-04-17 지멘스 악티엔게젤샤프트 Transistors with polysilicon-silicide gates and methods of manufacturing the same
KR100430473B1 (en) * 2001-02-06 2004-05-10 삼성전자주식회사 Method for depositing tungsten silicide
JP2009218610A (en) * 2009-05-15 2009-09-24 Renesas Technology Corp Semiconductor device

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