DE69739978D1 - Neue Copolymere und Fotolackzusammensetzungen mit einer Copolymerharzbindekomponente - Google Patents

Neue Copolymere und Fotolackzusammensetzungen mit einer Copolymerharzbindekomponente

Info

Publication number
DE69739978D1
DE69739978D1 DE69739978T DE69739978T DE69739978D1 DE 69739978 D1 DE69739978 D1 DE 69739978D1 DE 69739978 T DE69739978 T DE 69739978T DE 69739978 T DE69739978 T DE 69739978T DE 69739978 D1 DE69739978 D1 DE 69739978D1
Authority
DE
Germany
Prior art keywords
copolymer resin
resin binder
binder component
photoresist compositions
novel copolymers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69739978T
Other languages
English (en)
Inventor
George G Barclay
Michael F Cronin
Ronald A Dellaguardia
James W Thackeray
Hiroshi Ito
Greg Breyta
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm and Haas Electronic Materials LLC
Original Assignee
Rohm and Haas Electronic Materials LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=24668319&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE69739978(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Rohm and Haas Electronic Materials LLC filed Critical Rohm and Haas Electronic Materials LLC
Application granted granted Critical
Publication of DE69739978D1 publication Critical patent/DE69739978D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02Monomers containing only one unsaturated aliphatic radical
    • C08F212/04Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F212/14Monomers containing only one unsaturated aliphatic radical containing one ring substituted by heteroatoms or groups containing heteroatoms
    • C08F212/22Oxygen
    • C08F212/24Phenols or alcohols
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0045Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0046Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/09Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Emergency Medicine (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
DE69739978T 1996-06-11 1997-05-28 Neue Copolymere und Fotolackzusammensetzungen mit einer Copolymerharzbindekomponente Expired - Lifetime DE69739978D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/665,002 US5861231A (en) 1996-06-11 1996-06-11 Copolymers and photoresist compositions comprising copolymer resin binder component

Publications (1)

Publication Number Publication Date
DE69739978D1 true DE69739978D1 (de) 2010-10-14

Family

ID=24668319

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69739978T Expired - Lifetime DE69739978D1 (de) 1996-06-11 1997-05-28 Neue Copolymere und Fotolackzusammensetzungen mit einer Copolymerharzbindekomponente
DE69736374T Expired - Lifetime DE69736374T2 (de) 1996-06-11 1997-05-28 Photoresistzusammensetzungen, die Copolymere als Bindemittel enthalten

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE69736374T Expired - Lifetime DE69736374T2 (de) 1996-06-11 1997-05-28 Photoresistzusammensetzungen, die Copolymere als Bindemittel enthalten

Country Status (6)

Country Link
US (2) US5861231A (de)
EP (2) EP0813113B1 (de)
JP (3) JP3263010B2 (de)
KR (1) KR100568887B1 (de)
DE (2) DE69739978D1 (de)
TW (1) TW464789B (de)

Families Citing this family (146)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6090526A (en) * 1996-09-13 2000-07-18 Shipley Company, L.L.C. Polymers and photoresist compositions
US7026093B2 (en) * 1997-08-28 2006-04-11 Shipley Company, L.L.C. Photoresist compositions
US6037107A (en) 1997-08-28 2000-03-14 Shipley Company, L.L.C. Photoresist compositions
US6077643A (en) * 1997-08-28 2000-06-20 Shipley Company, L.L.C. Polymers and photoresist compositions
US7482107B2 (en) * 1997-08-28 2009-01-27 Shipley Company, L.L.C. Photoresist composition
US6207353B1 (en) * 1997-12-10 2001-03-27 International Business Machines Corporation Resist formulation which minimizes blistering during etching
JP3711198B2 (ja) 1998-04-23 2005-10-26 東京応化工業株式会社 レジストパターンの形成方法
US6815144B2 (en) * 1998-04-23 2004-11-09 Tokyo Ohka Kogyo Co., Ltd. Positive-working chemical-amplification photoresist composition
JP3798552B2 (ja) 1998-04-23 2006-07-19 東京応化工業株式会社 化学増幅型ホトレジスト
JP3761322B2 (ja) * 1998-04-23 2006-03-29 東京応化工業株式会社 化学増幅型ポジ型ホトレジスト
US6759483B2 (en) 1998-05-05 2004-07-06 Chemfirst Electronic Materials L.P. Preparation of homo-, co- and terpolymers of substituted styrenes
ATE262542T1 (de) * 1998-05-05 2004-04-15 Triquest L P Herstellung von co- und terpolymeren von p- hydroxystyrol und alkylacrylaten
JP3638086B2 (ja) * 1998-08-21 2005-04-13 東京応化工業株式会社 ポジ型レジスト組成物及びそれを用いたレジストパターン形成方法
US6884562B1 (en) * 1998-10-27 2005-04-26 E. I. Du Pont De Nemours And Company Photoresists and processes for microlithography
US6770413B1 (en) * 1999-01-12 2004-08-03 Shipley Company, L.L.C. Hydroxyphenyl copolymers and photoresists comprising same
US6673523B2 (en) 1999-03-09 2004-01-06 Matsushita Electric Industrial Co., Ltd. Pattern formation method
SG78412A1 (en) 1999-03-31 2001-02-20 Ciba Sc Holding Ag Oxime derivatives and the use thereof as latent acids
US6365321B1 (en) 1999-04-13 2002-04-02 International Business Machines Corporation Blends of hydroxystyrene polymers for use in chemically amplified positive resist formulations
JP3662774B2 (ja) 1999-06-02 2005-06-22 東京応化工業株式会社 ポジ型レジスト組成物
US6531259B1 (en) 1999-06-21 2003-03-11 Matsushita Electric Industrial Co., Ltd. Pattern formation method and pattern formation material
US6436606B1 (en) * 1999-08-30 2002-08-20 Shin-Etsu Chemical Co., Ltd. Polymers, resist compositions and patterning process
US6730451B2 (en) * 1999-12-15 2004-05-04 Shin-Etsu Chemical Co., Ltd. Polymers, chemical amplification resist compositions and patterning process
DE10008843A1 (de) 2000-02-25 2001-09-06 Beiersdorf Ag Polare Acrylathaftklebemassen
DE10008840A1 (de) 2000-02-25 2001-09-06 Beiersdorf Ag Strukturierte UV-vernetzte Acrylathaftklebemassen
JP3437138B2 (ja) * 2000-03-14 2003-08-18 松下電器産業株式会社 パターン形成材料及びパターン形成方法
US6593431B2 (en) 2000-06-27 2003-07-15 Chemfirst Electronic Materials Lp Purification means
US6787611B2 (en) * 2000-06-27 2004-09-07 Chemfirst Electronic Materials L.P. Purification means
KR100557616B1 (ko) * 2000-11-16 2006-03-10 주식회사 하이닉스반도체 레지스트 플로우 공정용 포토레지스트 중합체 및 이를함유하는 포토레지스트 조성물
US7132219B2 (en) * 2001-02-02 2006-11-07 Brewer Science Inc. Polymeric antireflective coatings deposited by plasma enhanced chemical vapor deposition
JP3962893B2 (ja) 2001-02-09 2007-08-22 信越化学工業株式会社 高分子化合物、レジスト材料及びパターン形成方法
US6596093B2 (en) 2001-02-15 2003-07-22 Micell Technologies, Inc. Methods for cleaning microelectronic structures with cyclical phase modulation
US6602351B2 (en) 2001-02-15 2003-08-05 Micell Technologies, Inc. Methods for the control of contaminants following carbon dioxide cleaning of microelectronic structures
US6641678B2 (en) 2001-02-15 2003-11-04 Micell Technologies, Inc. Methods for cleaning microelectronic structures with aqueous carbon dioxide systems
US6562146B1 (en) 2001-02-15 2003-05-13 Micell Technologies, Inc. Processes for cleaning and drying microelectronic structures using liquid or supercritical carbon dioxide
US6905555B2 (en) 2001-02-15 2005-06-14 Micell Technologies, Inc. Methods for transferring supercritical fluids in microelectronic and other industrial processes
US6613157B2 (en) 2001-02-15 2003-09-02 Micell Technologies, Inc. Methods for removing particles from microelectronic structures
US6794109B2 (en) 2001-02-23 2004-09-21 Massachusetts Institute Of Technology Low abosorbing resists for 157 nm lithography
EP1299773A4 (de) 2001-04-04 2006-06-21 Fujifilm Electronic Materials Siliziumhaltige acetal-schutzpolymere und photoresistzusammensetzungen davon
US6936398B2 (en) * 2001-05-09 2005-08-30 Massachusetts Institute Of Technology Resist with reduced line edge roughness
EP1393131A4 (de) * 2001-05-11 2006-08-09 Shipley Co Llc Dickfilm-fotoresists und verfahren zu ihrer verwendung
US6949329B2 (en) 2001-06-22 2005-09-27 Matsushita Electric Industrial Co., Ltd. Pattern formation method
EP1406123A4 (de) * 2001-06-22 2006-06-07 Wako Pure Chem Ind Ltd Resistzusammensetzungen
TW584786B (en) * 2001-06-25 2004-04-21 Shinetsu Chemical Co Polymers, resist compositions and patterning process
JP3891257B2 (ja) * 2001-06-25 2007-03-14 信越化学工業株式会社 高分子化合物、レジスト材料及びパターン形成方法
US7022455B2 (en) * 2001-12-28 2006-04-04 Shipley Company, L.L.C. Photoacid-labile polymers and photoresists comprising same
US20030190818A1 (en) * 2002-04-03 2003-10-09 Ruben Carbonell Enhanced processing of performance films using high-diffusivity penetrants
US6864324B2 (en) 2002-04-19 2005-03-08 Chem First Electronic Materials L.P. Anhydrous, liquid phase process for preparing hydroxyl containing polymers of enhanced purity
JP2003321520A (ja) * 2002-04-26 2003-11-14 Nippon Shokubai Co Ltd アルコール性水酸基と芳香族環とプロトンによる脱離性基を有する共重合体
US6852474B2 (en) * 2002-04-30 2005-02-08 Brewer Science Inc. Polymeric antireflective coatings deposited by plasma enhanced chemical vapor deposition
DE10259613A1 (de) * 2002-12-19 2004-07-08 Wacker-Chemie Gmbh Organopolysiloxanzusammensetzungen und deren Einsatz in bei Raumtemperatur vernetzbaren niedermoduligen Massen
US7297616B2 (en) * 2003-04-09 2007-11-20 Rohm And Haas Electronic Materials Llc Methods, photoresists and substrates for ion-implant lithography
US7834113B2 (en) 2003-05-08 2010-11-16 E. I. Du Pont De Nemours And Company Photoresist compositions and processes for preparing the same
JP4493938B2 (ja) * 2003-06-06 2010-06-30 東京応化工業株式会社 ポジ型レジスト組成物及びレジストパターン形成方法
WO2005013011A1 (ja) * 2003-08-04 2005-02-10 Fujitsu Limited レジストパターン厚肉化材料、それを用いたレジストパターンの製造方法及び半導体装置の製造方法
US7892903B2 (en) * 2004-02-23 2011-02-22 Asml Netherlands B.V. Device manufacturing method and substrate comprising multiple resist layers
US20050255410A1 (en) * 2004-04-29 2005-11-17 Guerrero Douglas J Anti-reflective coatings using vinyl ether crosslinkers
US20070207406A1 (en) * 2004-04-29 2007-09-06 Guerrero Douglas J Anti-reflective coatings using vinyl ether crosslinkers
US7781141B2 (en) 2004-07-02 2010-08-24 Rohm And Haas Electronic Materials Llc Compositions and processes for immersion lithography
JP4789599B2 (ja) 2004-12-06 2011-10-12 ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. フォトレジスト組成物
US7326523B2 (en) * 2004-12-16 2008-02-05 International Business Machines Corporation Low refractive index polymers as underlayers for silicon-containing photoresists
EP1691238A3 (de) 2005-02-05 2009-01-21 Rohm and Haas Electronic Materials, L.L.C. Beschichtungszusammensetzungen zur Verwendung mit einem beschichteten Fotolack
JP2006317775A (ja) * 2005-05-13 2006-11-24 Jsr Corp 感放射線性樹脂組成物
US7375172B2 (en) * 2005-07-06 2008-05-20 International Business Machines Corporation Underlayer compositions containing heterocyclic aromatic structures
EP1762895B1 (de) 2005-08-29 2016-02-24 Rohm and Haas Electronic Materials, L.L.C. Antireflex-Zusammensetzungen für Hartmasken
EP1829942B1 (de) 2006-02-28 2012-09-26 Rohm and Haas Electronic Materials, L.L.C. Beschichtungszusammensetzungen zur Verwendung mit einem beschichteten Fotolack
TWI598223B (zh) 2006-03-10 2017-09-11 羅門哈斯電子材料有限公司 用於光微影之組成物及製程
WO2007124092A2 (en) * 2006-04-21 2007-11-01 Cornell Research Foundation, Inc. Photoacid generator compounds and compositions
US7914974B2 (en) 2006-08-18 2011-03-29 Brewer Science Inc. Anti-reflective imaging layer for multiple patterning process
EP2420892A1 (de) 2006-10-30 2012-02-22 Rohm and Haas Electronic Materials LLC Zusammensetzungen und Verfahren für Immersionslithografie
TWI374478B (en) 2007-02-13 2012-10-11 Rohm & Haas Elect Mat Electronic device manufacture
KR101485844B1 (ko) 2007-04-06 2015-01-26 롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨 코팅 조성물
US7790350B2 (en) * 2007-07-30 2010-09-07 International Business Machines Corporation Method and materials for patterning a neutral surface
EP2056162B1 (de) 2007-11-05 2016-05-04 Rohm and Haas Electronic Materials LLC Verfahren für Immersionslithografie
EP2071400A1 (de) 2007-11-12 2009-06-17 Rohm and Haas Electronic Materials LLC Beschichtungszusammensetzungen zur Verwendung mit einem beschichteten Fotolack
KR101647158B1 (ko) * 2008-01-29 2016-08-09 브레우어 사이언스 인코포레이션 다중 다크 필드 노출에 의한, 하드마스크 패턴화를 위한 온-트랙 공정
EP2189844A3 (de) 2008-11-19 2010-07-28 Rohm and Haas Electronic Materials LLC Zusammensetzungen, die Sulfonamid-Material beinhalten, und Verfahren für die Fotolithografie
EP2189845B1 (de) 2008-11-19 2017-08-02 Rohm and Haas Electronic Materials LLC Zusammensetzungen und Prozesse für Fotolithographie
EP3051348A1 (de) 2008-11-19 2016-08-03 Rohm and Haas Electronic Materials LLC Zusammensetzungen mit heterosubstituierter carbocyclischer arylkomponente und fotolithografie verfahren
EP2189846B1 (de) 2008-11-19 2015-04-22 Rohm and Haas Electronic Materials LLC Verfahren für die Fotolithographie unter Verwendung einer Fotolackzusammensetzung beinhaltend ein Blockcopolymer
EP2194429A1 (de) 2008-12-02 2010-06-09 Eastman Kodak Company Gummierzusammensetzungen mit Nanoteilchen zur Verbesserung der Kratzempfindlichkeit in Bild- und Nicht-Bild-Bereichen von lithografischen Druckplatten
EP2204694A1 (de) 2008-12-31 2010-07-07 Rohm and Haas Electronic Materials LLC Zusammensetzungen und Verfahren für Fotolithografie
EP2204392A1 (de) 2008-12-31 2010-07-07 Rohm and Haas Electronic Materials LLC Zusammensetzungen und Verfahren für Fotolithografie
US9640396B2 (en) * 2009-01-07 2017-05-02 Brewer Science Inc. Spin-on spacer materials for double- and triple-patterning lithography
EP2216683B1 (de) 2009-02-08 2018-11-14 Rohm and Haas Electronic Materials, L.L.C. Mit einer Antireflexionszusammensetzung und einem Photoresist beschichtete Substrate
JP5746824B2 (ja) 2009-02-08 2015-07-08 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC 上塗りフォトレジストと共に使用するのに好適なコーティング組成物
US20100227269A1 (en) 2009-03-04 2010-09-09 Simpson Christopher D Imageable elements with colorants
US9244352B2 (en) 2009-05-20 2016-01-26 Rohm And Haas Electronic Materials, Llc Coating compositions for use with an overcoated photoresist
US8501383B2 (en) 2009-05-20 2013-08-06 Rohm And Haas Electronic Materials Llc Coating compositions for use with an overcoated photoresist
CN101943860B (zh) 2009-06-08 2013-12-11 罗门哈斯电子材料有限公司 平版印刷方法
US8883407B2 (en) 2009-06-12 2014-11-11 Rohm And Haas Electronic Materials Llc Coating compositions suitable for use with an overcoated photoresist
US8338077B2 (en) 2009-06-22 2012-12-25 Rohm And Haas Electronic Materials Llc Photoacid generators and photoresists comprising same
EP2447291B1 (de) * 2009-08-04 2015-04-08 Nippon Soda Co., Ltd. Copolymer mit hohem molekulargewicht
EP2284005B1 (de) 2009-08-10 2012-05-02 Eastman Kodak Company Lithografische Druckplattenvorläufer mit Betahydroxy-Alkylamid-Vernetzern
US8383319B2 (en) 2009-08-25 2013-02-26 Eastman Kodak Company Lithographic printing plate precursors and stacks
EP2293144B1 (de) 2009-09-04 2012-11-07 Eastman Kodak Company Verfahren zum Trocknen von Lithographiedruckplatten nach einer Einstufenverarbeitung
US20110097666A1 (en) 2009-10-27 2011-04-28 Celin Savariar-Hauck Lithographic printing plate precursors
US8936899B2 (en) 2012-09-04 2015-01-20 Eastman Kodak Company Positive-working lithographic printing plate precursors and use
EP2332960B1 (de) 2009-12-10 2016-08-10 Rohm and Haas Electronic Materials LLC Cholat-Fotosäureerzeuger und Fotoresiste damit
KR101785429B1 (ko) 2009-12-10 2017-10-16 롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨 포토애시드 발생제 및 이를 포함하는 포토레지스트
US9488910B2 (en) 2009-12-14 2016-11-08 Rohm And Haas Electronic Materials Llc Sulfonyl photoacid generators and photoresists comprising same
US10295910B2 (en) 2009-12-15 2019-05-21 Rohm And Haas Electronic Materials Llc Photoresists and methods of use thereof
EP2336827B1 (de) 2009-12-15 2015-09-16 Rohm and Haas Electronic Materials LLC Methode zur herstellung eines ionen-implantierten halbleitersubstrates
CN102194673B (zh) 2009-12-15 2015-08-05 罗门哈斯电子材料有限公司 光致抗蚀剂及其使用方法
EP2348360B1 (de) 2010-01-25 2017-09-27 Rohm and Haas Electronic Materials LLC Photoresist, der eine stickstoffhaltige Verbindung umfasst
JP5624833B2 (ja) 2010-01-29 2014-11-12 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、これを用いたレジスト膜、及び、パターン形成方法
EP2539316B1 (de) 2010-02-24 2019-10-23 Basf Se Latente säuren und ihre verwendung
US20110236832A1 (en) 2010-03-26 2011-09-29 Celin Savariar-Hauck Lithographic processing solutions and methods of use
JP5782283B2 (ja) 2010-03-31 2015-09-24 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC 新規のポリマーおよびフォトレジスト組成物
JP5969171B2 (ja) 2010-03-31 2016-08-17 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC 光酸発生剤およびこれを含むフォトレジスト
JP5756672B2 (ja) 2010-04-27 2015-07-29 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC 光酸発生剤およびこれを含むフォトレジスト
IL213195A0 (en) 2010-05-31 2011-07-31 Rohm & Haas Elect Mat Photoresist compositions and emthods of forming photolithographic patterns
JP2012073612A (ja) 2010-09-14 2012-04-12 Rohm & Haas Electronic Materials Llc マルチアミド成分を含むフォトレジスト
EP2452932A2 (de) 2010-11-15 2012-05-16 Rohm and Haas Electronic Materials LLC Basenreaktive Fotosäuregeneratoren und diese enthaltende Fotoresiste
JP5961363B2 (ja) 2010-11-15 2016-08-02 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC ラクトン光酸発生剤、これを含む樹脂およびフォトレジスト
JP2012113302A (ja) 2010-11-15 2012-06-14 Rohm & Haas Electronic Materials Llc 塩基反応性成分を含む組成物およびフォトリソグラフィーのための方法
JP6144005B2 (ja) 2010-11-15 2017-06-07 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC 糖成分を含む組成物およびフォトリソグラフィ方法
EP2472320A2 (de) 2010-12-30 2012-07-04 Rohm and Haas Electronic Materials LLC Zusammensetzungen mit basisch-reaktiven Komponenten und Verfahren für Fotolithografie
EP2472327A1 (de) 2010-12-30 2012-07-04 Rohm and Haas Electronic Materials LLC Fotoresiste und Verwendungsverfahren dafür
EP2472329B1 (de) 2010-12-31 2013-06-05 Rohm and Haas Electronic Materials LLC Beschichtungszusammensetzungen zur Verwendung mit einem beschichteten Fotolack
EP2472328B1 (de) 2010-12-31 2013-06-19 Rohm and Haas Electronic Materials LLC Beschichtungszusammensetzungen zur Verwendung mit einem beschichteten Fotolack
US8632940B2 (en) 2011-04-19 2014-01-21 Eastman Kodak Company Aluminum substrates and lithographic printing plate precursors
JP5589019B2 (ja) 2011-06-14 2014-09-10 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、これを用いた感活性光線性又は感放射線性膜、及び、パターン形成方法
JP5277291B2 (ja) 2011-06-29 2013-08-28 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、これを用いた感活性光線性又は感放射線性膜、及び、パターン形成方法
JP5298222B2 (ja) 2011-07-28 2013-09-25 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、これを用いた感活性光線性又は感放射線性膜、及び、パターン形成方法
US8722308B2 (en) 2011-08-31 2014-05-13 Eastman Kodak Company Aluminum substrates and lithographic printing plate precursors
US9011591B2 (en) 2011-09-21 2015-04-21 Dow Global Technologies Llc Compositions and antireflective coatings for photolithography
US9366964B2 (en) 2011-09-21 2016-06-14 Dow Global Technologies Llc Compositions and antireflective coatings for photolithography
WO2013122979A1 (en) 2012-02-15 2013-08-22 Chirhoclin, Inc. Methods for treating pain associated with chronic pancreatitis
JP5703247B2 (ja) 2012-03-02 2015-04-15 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、感活性光線性又は感放射線性膜、フォトマスクブランクス、及び、パターン形成方法
WO2013133396A1 (en) 2012-03-05 2013-09-12 Fujifilm Corporation Actinic ray-sensitive or radiation-sensitive resin composition, and, actinic ray-sensitive or radiation-sensitive film and pattern forming method, each using the composition
US11635688B2 (en) 2012-03-08 2023-04-25 Kayaku Advanced Materials, Inc. Photoimageable compositions and processes for fabrication of relief patterns on low surface energy substrates
US20130255515A1 (en) 2012-03-27 2013-10-03 Celin Savariar-Hauck Positive-working lithographic printing plate precursors
US11406718B2 (en) 2012-05-29 2022-08-09 Chirhoclin, Inc. Methods of detecting pancreobiliary ductal leaks
US10527934B2 (en) 2012-10-31 2020-01-07 Rohm And Haas Electronic Materials Llc Photoresists comprising ionic compound
US9541834B2 (en) 2012-11-30 2017-01-10 Rohm And Haas Electronic Materials Llc Ionic thermal acid generators for low temperature applications
EP3253735B1 (de) 2015-02-02 2021-03-31 Basf Se Latente säuren und ihre verwendung
KR101785426B1 (ko) 2015-04-30 2017-10-17 롬엔드하스전자재료코리아유한회사 포토레지스트 조성물 및 방법
JP2017181895A (ja) * 2016-03-31 2017-10-05 東京応化工業株式会社 化学増幅型ポジ型感光性樹脂組成物
SG11201900622UA (en) * 2016-10-12 2019-04-29 Ridgefield Acquisition Chemically amplified positive photoresist composition and pattern forming method using same
KR102513125B1 (ko) * 2017-09-13 2023-03-23 후지필름 가부시키가이샤 감활성광선성 또는 감방사선성 수지 조성물, 레지스트막, 패턴 형성 방법, 및 전자 디바이스의 제조 방법
JP6730417B2 (ja) 2017-12-31 2020-07-29 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC フォトレジスト組成物および方法
TW202119130A (zh) 2019-08-09 2021-05-16 日商丸善石油化學股份有限公司 聚合物及其製造方法,及阻劑用樹脂組成物
US11262654B2 (en) * 2019-12-27 2022-03-01 Intel Corporation Chain scission resist compositions for EUV lithography applications
WO2021256551A1 (ja) 2020-06-18 2021-12-23 丸善石油化学株式会社 高純度4-ヒドロキシスチレン溶液、その製造方法、および4-ヒドロキシスチレン系重合体の製造方法
US11744878B2 (en) 2020-08-19 2023-09-05 Chirhoclin, Inc. Methods for treatment of COVID-19 syndrome
US11874603B2 (en) 2021-09-15 2024-01-16 Rohm And Haas Electronic Materials Korea Ltd. Photoresist composition comprising amide compound and pattern formation methods using the same

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69125634T2 (de) * 1990-01-30 1998-01-02 Wako Pure Chem Ind Ltd Chemisch verstärktes Photolack-Material
JP3022416B2 (ja) * 1990-01-30 2000-03-21 和光純薬工業株式会社 化学増幅型レジスト材料
US5071730A (en) * 1990-04-24 1991-12-10 International Business Machines Corporation Liquid apply, aqueous processable photoresist compositions
JP3030672B2 (ja) * 1991-06-18 2000-04-10 和光純薬工業株式会社 新規なレジスト材料及びパタ−ン形成方法
JP2964733B2 (ja) * 1991-10-23 1999-10-18 三菱電機株式会社 パターン形成材料
JP3249194B2 (ja) * 1992-09-14 2002-01-21 株式会社東芝 感光性レジスト組成物
DE69322946T2 (de) * 1992-11-03 1999-08-12 International Business Machines Corp., Armonk, N.Y. Photolackzusammensetzung
JPH06214395A (ja) * 1993-01-18 1994-08-05 Sumitomo Chem Co Ltd ポジ型フォトレジスト組成物
US5352564A (en) * 1993-01-19 1994-10-04 Shin-Etsu Chemical Co., Ltd. Resist compositions
JP3247193B2 (ja) * 1993-03-30 2002-01-15 信越化学工業株式会社 p−t−ブトキシスチレン系重合体の製造方法
JP2936956B2 (ja) * 1993-04-15 1999-08-23 信越化学工業株式会社 レジスト材料
US5344742A (en) * 1993-04-21 1994-09-06 Shipley Company Inc. Benzyl-substituted photoactive compounds and photoresist compositions comprising same
JPH06324494A (ja) * 1993-05-12 1994-11-25 Fujitsu Ltd パターン形成材料およびパターン形成方法
JP3427133B2 (ja) * 1993-06-01 2003-07-14 信越化学工業株式会社 レジスト材料
JPH073116A (ja) * 1993-06-18 1995-01-06 Nippon Oil & Fats Co Ltd 光硬化性樹脂組成物
JP3116751B2 (ja) * 1993-12-03 2000-12-11 ジェイエスアール株式会社 感放射線性樹脂組成物
GB9325984D0 (en) * 1993-12-20 1994-02-23 Philips Electronics Uk Ltd Manufacture of electronic devices comprising thin-film transistors
JPH07233222A (ja) * 1993-12-28 1995-09-05 Japan Synthetic Rubber Co Ltd ビニルフェノール共重合体の製造方法
US5866304A (en) * 1993-12-28 1999-02-02 Nec Corporation Photosensitive resin and method for patterning by use of the same
JPH07261377A (ja) * 1994-03-18 1995-10-13 Japan Synthetic Rubber Co Ltd 化学増幅型レジスト溶液
US5580694A (en) * 1994-06-27 1996-12-03 International Business Machines Corporation Photoresist composition with androstane and process for its use
US5558971A (en) * 1994-09-02 1996-09-24 Wako Pure Chemical Industries, Ltd. Resist material
JP3173368B2 (ja) * 1995-04-12 2001-06-04 信越化学工業株式会社 高分子化合物及び化学増幅ポジ型レジスト材料
JP3692595B2 (ja) * 1996-02-16 2005-09-07 Jsr株式会社 感放射線性樹脂組成物
JP3694976B2 (ja) * 1996-05-02 2005-09-14 Jsr株式会社 感放射線性樹脂組成物

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US6042997A (en) 2000-03-28
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