DE10134162B4 - Copolymer und Verwendung des Copolymers in einer Photoresistzusammensetzung - Google Patents

Copolymer und Verwendung des Copolymers in einer Photoresistzusammensetzung Download PDF

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Publication number
DE10134162B4
DE10134162B4 DE10134162A DE10134162A DE10134162B4 DE 10134162 B4 DE10134162 B4 DE 10134162B4 DE 10134162 A DE10134162 A DE 10134162A DE 10134162 A DE10134162 A DE 10134162A DE 10134162 B4 DE10134162 B4 DE 10134162B4
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DE
Germany
Prior art keywords
copolymer
photoresist composition
photoresist
composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE10134162A
Other languages
English (en)
Other versions
DE10134162A1 (de
Inventor
Tsuyoshi Nakamura
Taeko Ikegawa
Atsushi Sawano
Kousuke Doi
Hidekatsu Kohara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Ohka Kogyo Co Ltd
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Publication of DE10134162A1 publication Critical patent/DE10134162A1/de
Application granted granted Critical
Publication of DE10134162B4 publication Critical patent/DE10134162B4/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G03F7/0758—Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G03F7/405—Treatment with inorganic or organometallic reagents after imagewise removal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/111—Polymer of unsaturated acid or ester

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Other Resins Obtained By Reactions Not Involving Carbon-To-Carbon Unsaturated Bonds (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
DE10134162A 2000-07-14 2001-07-13 Copolymer und Verwendung des Copolymers in einer Photoresistzusammensetzung Expired - Fee Related DE10134162B4 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000214450A JP2002030116A (ja) 2000-07-14 2000-07-14 新規コポリマー、ホトレジスト組成物、および高アスペクト比のレジストパターン形成方法

Publications (2)

Publication Number Publication Date
DE10134162A1 DE10134162A1 (de) 2002-04-25
DE10134162B4 true DE10134162B4 (de) 2005-10-20

Family

ID=18710021

Family Applications (1)

Application Number Title Priority Date Filing Date
DE10134162A Expired - Fee Related DE10134162B4 (de) 2000-07-14 2001-07-13 Copolymer und Verwendung des Copolymers in einer Photoresistzusammensetzung

Country Status (4)

Country Link
US (1) US6517993B2 (de)
JP (1) JP2002030116A (de)
DE (1) DE10134162B4 (de)
TW (1) TW556046B (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002030118A (ja) * 2000-07-14 2002-01-31 Tokyo Ohka Kogyo Co Ltd 新規コポリマー、ホトレジスト組成物、および高アスペクト比のレジストパターン形成方法
JP2002040660A (ja) * 2000-07-21 2002-02-06 Sony Corp 露光方法
KR100907268B1 (ko) * 2001-04-05 2009-07-13 후지필름 가부시키가이샤 포지티브 레지스트 조성물 및 이를 사용한 패턴 형성 방법
DE10131670A1 (de) * 2001-06-29 2003-01-16 Infineon Technologies Ag Fotoresists mit Reaktionsankern für eine chemische Nachverstärkung von Resiststrukturen für Belichtungen bei 157 nm
US20030064321A1 (en) * 2001-08-31 2003-04-03 Arch Specialty Chemicals, Inc. Free-acid containing polymers and their use in photoresists
DE10208754B4 (de) * 2002-02-28 2007-03-01 Infineon Technologies Ag Polymermaterial mit niedriger Glastemperatur für die Anwendung in chemisch verstärkten Fotoresists für die Halbleiterfertigung
US6989230B2 (en) * 2002-03-29 2006-01-24 Infineon Technologies Ag Producing low k inter-layer dielectric films using Si-containing resists
TWI314943B (en) * 2002-08-29 2009-09-21 Radiation-sensitive resin composition
US6878504B2 (en) * 2003-05-28 2005-04-12 Everlight Usa, Inc. Chemically-amplified resist compositions
JP2007522262A (ja) * 2003-06-26 2007-08-09 シミックス・テクノロジーズ・インコーポレイテッド フォトレジストポリマー
DE602004008468T2 (de) * 2003-06-26 2008-05-21 Jsr Corp. Photoresistzusammensetzungen
WO2005003192A1 (en) * 2003-06-26 2005-01-13 Symyx Technologies, Inc. Synthesis of photoresist polymers
KR20060085723A (ko) * 2005-01-25 2006-07-28 삼성전자주식회사 포토레지스트 조성물 및 이를 이용한 패턴 형성방법
US7476492B2 (en) * 2006-05-26 2009-01-13 International Business Machines Corporation Low activation energy photoresist composition and process for its use
WO2009047151A1 (en) 2007-10-10 2009-04-16 Basf Se Sulphonium salt initiators
EP2539316B1 (de) 2010-02-24 2019-10-23 Basf Se Latente säuren und ihre verwendung
CN102929102B (zh) 2012-10-31 2014-05-21 京东方科技集团股份有限公司 一种深紫外化学增幅型正性光致抗蚀剂
CN103130955B (zh) * 2013-03-07 2015-06-17 京东方科技集团股份有限公司 一种光刻胶用光敏性寡聚物、其制备方法及负性光刻胶组合物
CN107207456B (zh) 2015-02-02 2021-05-04 巴斯夫欧洲公司 潜酸及其用途

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0006938A1 (de) * 1977-11-07 1980-01-23 Fujitsu Limited Positiv arbeitende polymere photoresistzusammensetzung und verfahren zur herstellung von resistmustern
EP0152889A2 (de) * 1984-02-18 1985-08-28 BASF Aktiengesellschaft Lichtempfindliche Aufzeichnungsmaterialien
EP0494383A1 (de) * 1990-12-20 1992-07-15 Siemens Aktiengesellschaft photoresist
DE3890136C2 (de) * 1988-01-07 1993-06-24 Asahi Kasei Kogyo K.K., Osaka, Jp
JPH06317915A (ja) * 1993-04-30 1994-11-15 Canon Inc 電子写真感光体及び電子写真装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH075682B2 (ja) * 1986-07-09 1995-01-25 旭化成工業株式会社 低吸湿性メタクリル系樹脂の製造方法
US5234794A (en) 1989-04-24 1993-08-10 Siemens Aktiengesellschaft Photostructuring method
JP3001607B2 (ja) 1989-04-24 2000-01-24 シーメンス、アクチエンゲゼルシヤフト 二層法における寸法安定な構造転写方法
ES2101710T3 (es) 1990-12-20 1997-07-16 Siemens Ag Procedimiento fotolitografico.
US5270151A (en) * 1992-03-17 1993-12-14 International Business Machines Corporation Spin on oxygen reactive ion etch barrier
JP3972438B2 (ja) 1998-01-26 2007-09-05 住友化学株式会社 化学増幅型のポジ型レジスト組成物
JP3662774B2 (ja) * 1999-06-02 2005-06-22 東京応化工業株式会社 ポジ型レジスト組成物
TW565746B (en) * 1999-10-29 2003-12-11 Fuji Photo Film Co Ltd Positive-type photoresist composition

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0006938A1 (de) * 1977-11-07 1980-01-23 Fujitsu Limited Positiv arbeitende polymere photoresistzusammensetzung und verfahren zur herstellung von resistmustern
EP0152889A2 (de) * 1984-02-18 1985-08-28 BASF Aktiengesellschaft Lichtempfindliche Aufzeichnungsmaterialien
DE3890136C2 (de) * 1988-01-07 1993-06-24 Asahi Kasei Kogyo K.K., Osaka, Jp
EP0494383A1 (de) * 1990-12-20 1992-07-15 Siemens Aktiengesellschaft photoresist
JPH06317915A (ja) * 1993-04-30 1994-11-15 Canon Inc 電子写真感光体及び電子写真装置

Also Published As

Publication number Publication date
DE10134162A1 (de) 2002-04-25
US6517993B2 (en) 2003-02-11
TW556046B (en) 2003-10-01
JP2002030116A (ja) 2002-01-31
US20020031719A1 (en) 2002-03-14

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