SG11201900622UA - Chemically amplified positive photoresist composition and pattern forming method using same - Google Patents
Chemically amplified positive photoresist composition and pattern forming method using sameInfo
- Publication number
- SG11201900622UA SG11201900622UA SG11201900622UA SG11201900622UA SG11201900622UA SG 11201900622U A SG11201900622U A SG 11201900622UA SG 11201900622U A SG11201900622U A SG 11201900622UA SG 11201900622U A SG11201900622U A SG 11201900622UA SG 11201900622U A SG11201900622U A SG 11201900622UA
- Authority
- SG
- Singapore
- Prior art keywords
- international
- chihama
- kakegawa
- shizuoka
- shi
- Prior art date
Links
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
- C08F212/02—Monomers containing only one unsaturated aliphatic radical
- C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
- C08F212/06—Hydrocarbons
- C08F212/08—Styrene
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
- C08F212/02—Monomers containing only one unsaturated aliphatic radical
- C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
- C08F212/06—Hydrocarbons
- C08F212/12—Monomers containing a branched unsaturated aliphatic radical or a ring substituted by an alkyl radical
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
- G03F7/322—Aqueous alkaline compositions
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/38—Treatment before imagewise removal, e.g. prebaking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Medicinal Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials For Photolithography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Detergent Compositions (AREA)
Abstract
INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (43) International Publication Date 19 April 2018 (19.04.2018) WIP0 1 PCT ~~ll~~~~~~~~ 011101010VIIIOH olo omoionoi mo Immo ow (10) International Publication Number WO 2018/069274 Al (51) International Patent Classification: TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, G03F 7/039 (2006.01) GO3F 7/40 (2006.01) KM, ML, MR, NE, SN, TD, TG). G03F 7/38 (2006.01) (21) International Application Number: (22) International Filing Date: PCT/EP2017/075738 Published: — with international search report (Art. 21(3)) 10 October 2017 (10.10.2017) (25) Filing Language: English (26) Publication Language: English (30) Priority Data: 16002196.0 12 October 2016 (12.10.2016) EP (71) Applicant: AZ ELECTRONIC MATERIALS (LUX- EMBOURG) S.A.R.L. [LU/LU]; 46 Place Guillaume II, 1648 Luxembourg (LU). (72) Inventors: TAKAICHI, Tetsumasa; c/o Merck Perfor- mance Materials Ltd., 3330, Chihama, Kakegawa-shi, Shizuoka 437-1412 (JP). KAWATO, Shunji; c/o Merck Performance Materials Ltd., 3330, Chihama, Kakegawa- shi, Shizuoka 437-1412 (JP). SUZUKI, Masato; c/o Mer- ck Performance Materials Ltd., 3330, Chihama, Kakegawa- shi, Shizuoka 437-1412 (JP). AKASHI, Kazumichi; c/ o Merck Performance Materials Ltd., 3330, Chihama, Kakegawa-shi, Shizuoka 437-1412 (JP). KATAYAMA, Tomohide; c/o Merck Performance Materials Ltd., 3330, Chihama, Kakegawa-shi, Shizuoka 437-1412 (JP). (74) Agent: B2B PATENTS; c/o Merck Patent GmbH, 64271 Darmstadt (DE). (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, 1-1 TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, 71' MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, © (54) Title: CHEMICALLY AMPLIFIED POSITIVE PHOTORESIST COMPOSITION AND PATTERN FORMING METHOD USING SAME 1-1 O (57) : The present invention relates to a photosensitive resin composition suitable for forming a thick film, which comprises \" (A) an alkali-soluble resin, (B) at least one plasticizer selected from a group consisting of an alkali- soluble vinyl resin and an acid- dissociable group containing vinyl resin, (C) an acid generator, and (D) an organic solvent.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP16002196 | 2016-10-12 | ||
PCT/EP2017/075738 WO2018069274A1 (en) | 2016-10-12 | 2017-10-10 | Chemically amplified positive photoresist composition and pattern forming method using same |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201900622UA true SG11201900622UA (en) | 2019-04-29 |
Family
ID=57144708
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201900622UA SG11201900622UA (en) | 2016-10-12 | 2017-10-10 | Chemically amplified positive photoresist composition and pattern forming method using same |
Country Status (8)
Country | Link |
---|---|
US (1) | US11029599B2 (en) |
EP (1) | EP3526644B1 (en) |
JP (1) | JP7317704B2 (en) |
KR (1) | KR102298153B1 (en) |
CN (1) | CN109804311B (en) |
SG (1) | SG11201900622UA (en) |
TW (1) | TWI744391B (en) |
WO (1) | WO2018069274A1 (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102656151B1 (en) * | 2017-09-29 | 2024-04-08 | 니폰 제온 가부시키가이샤 | Positive resist composition, resist film forming method, and laminate manufacturing method |
US20210263414A1 (en) * | 2018-06-22 | 2021-08-26 | Merck Patent Gmbh | A photoresist composition, a method for manufacturing a photoresist coating, etched photoresist coating, and etched si containing layer(s), and manufacturing a device using thereof |
TWI833992B (en) * | 2019-10-15 | 2024-03-01 | 美商羅門哈斯電子材料有限公司 | Photoresist compositions and pattern formation methods |
JP2021152646A (en) * | 2020-03-18 | 2021-09-30 | 信越化学工業株式会社 | Resist material and pattern forming process |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5861231A (en) | 1996-06-11 | 1999-01-19 | Shipley Company, L.L.C. | Copolymers and photoresist compositions comprising copolymer resin binder component |
JP2001290275A (en) * | 2000-02-03 | 2001-10-19 | Fuji Photo Film Co Ltd | Positive photoresist composition |
JP2004198915A (en) | 2002-12-20 | 2004-07-15 | Shin Etsu Chem Co Ltd | Positive resist composition and method of forming pattern |
JP4205078B2 (en) * | 2005-05-26 | 2009-01-07 | 東京応化工業株式会社 | Positive resist composition and resist pattern forming method |
US7255970B2 (en) * | 2005-07-12 | 2007-08-14 | Az Electronic Materials Usa Corp. | Photoresist composition for imaging thick films |
US20070105040A1 (en) | 2005-11-10 | 2007-05-10 | Toukhy Medhat A | Developable undercoating composition for thick photoresist layers |
TW200739265A (en) * | 2005-12-06 | 2007-10-16 | Tokyo Ohka Kogyo Co Ltd | Positive photoresist composition and method of forming photoresist pattern using the same |
JP4954576B2 (en) | 2006-03-15 | 2012-06-20 | 東京応化工業株式会社 | Thick film resist laminate, manufacturing method thereof, and resist pattern forming method |
TWI460535B (en) * | 2007-03-12 | 2014-11-11 | 羅門哈斯電子材料有限公司 | Phenolic polymers and photoresists comprising same |
JP4637221B2 (en) * | 2007-09-28 | 2011-02-23 | 富士フイルム株式会社 | Positive photosensitive resin composition and cured film forming method using the same |
JP5729313B2 (en) | 2011-01-19 | 2015-06-03 | 信越化学工業株式会社 | Chemically amplified positive resist material and pattern forming method |
JP5707359B2 (en) * | 2011-05-30 | 2015-04-30 | 富士フイルム株式会社 | Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, method for producing electronic device, and electronic device |
JP6255717B2 (en) | 2012-06-08 | 2018-01-10 | 住友化学株式会社 | Resist composition and method for producing resist pattern |
JP5919122B2 (en) * | 2012-07-27 | 2016-05-18 | 富士フイルム株式会社 | Resin composition and pattern forming method using the same |
JP6200721B2 (en) * | 2013-08-01 | 2017-09-20 | 富士フイルム株式会社 | Pattern forming method and electronic device manufacturing method using the same |
JP6238635B2 (en) * | 2013-08-09 | 2017-11-29 | 東京応化工業株式会社 | Chemically amplified photosensitive resin composition and method for producing resist pattern using the same |
US9316900B2 (en) * | 2013-10-11 | 2016-04-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Extreme ultraviolet lithography process and mask |
JP6432170B2 (en) * | 2014-06-09 | 2018-12-05 | 信越化学工業株式会社 | Chemically amplified positive resist material and pattern forming method |
JP6345250B2 (en) * | 2014-07-31 | 2018-06-20 | 富士フイルム株式会社 | PATTERN FORMING METHOD, RESIST PATTERN, ELECTRONIC DEVICE MANUFACTURING METHOD, AND ELECTRONIC DEVICE |
US10487205B2 (en) * | 2014-08-08 | 2019-11-26 | Nissan Chemical Industries, Ltd. | Resin composition for flattened film or microlens |
US10527935B2 (en) * | 2016-12-31 | 2020-01-07 | Rohm And Haas Electronic Materials Llc | Radiation-sensitive compositions and patterning and metallization processes |
-
2017
- 2017-10-10 EP EP17778315.6A patent/EP3526644B1/en active Active
- 2017-10-10 SG SG11201900622UA patent/SG11201900622UA/en unknown
- 2017-10-10 JP JP2019519707A patent/JP7317704B2/en active Active
- 2017-10-10 KR KR1020197013599A patent/KR102298153B1/en active IP Right Grant
- 2017-10-10 WO PCT/EP2017/075738 patent/WO2018069274A1/en unknown
- 2017-10-10 CN CN201780062691.XA patent/CN109804311B/en active Active
- 2017-10-10 US US16/340,413 patent/US11029599B2/en active Active
- 2017-10-11 TW TW106134662A patent/TWI744391B/en active
Also Published As
Publication number | Publication date |
---|---|
TW201827928A (en) | 2018-08-01 |
KR20190062558A (en) | 2019-06-05 |
JP2019532343A (en) | 2019-11-07 |
JP7317704B2 (en) | 2023-07-31 |
WO2018069274A1 (en) | 2018-04-19 |
CN109804311A (en) | 2019-05-24 |
EP3526644A1 (en) | 2019-08-21 |
TWI744391B (en) | 2021-11-01 |
EP3526644B1 (en) | 2020-11-25 |
US20190235382A1 (en) | 2019-08-01 |
KR102298153B1 (en) | 2021-09-08 |
US11029599B2 (en) | 2021-06-08 |
CN109804311B (en) | 2023-06-06 |
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